Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas UPA2706GR-E1-A

Part No.:
UPA2706GR-E1-A
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-SOIC (0.173", 4.40mm Width)
Datasheet:
AetrixUPA2706GR-E1-A.pdf
Description:
UPA2706GR-E1-A - MOS FIELD EFFEC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,000

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

UPA2706GR-E1-A from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency DC/DC converters in notebook computers. It delivers RDS(on) = 15 mΩ max at VGS = 10 V / ID = 5.5 A, supports ±11 A DC drain current, and features low input capacitance (Ciss = 660 pF typ) in a Power SOP8 surface-mount package.

For engineers reviewing the UPA2706GR-E1-A datasheet, UPA2706GR-E1-A pinout, UPA2706GR-E1-A application, or UPA2706GR-E1-A equivalent, key selection criteria include gate threshold compatibility with 4.5 V logic-level drive, avalanche energy rating (EAS = 12.1 mJ), body diode reverse recovery performance (trr = 25 ns), and thermal derating on ceramic substrates.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous buck topologies. Its dual RDS(on) specification (15 mΩ @ 10 V, 22.5 mΩ @ 4.5 V) confirms robust operation under both standard and logic-level gate drive conditions.

The integrated body diode exhibits VF(S-D) = 0.84 V at IF = 11 A and trr = 25 ns with di/dt = 100 A/µs - enabling efficient freewheeling in high-frequency converter stages without external Schottky supplementation.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS30 V - supports input rails up to 24 V nominal with 25% margin for transient spikes in notebook power rails.
RDS(on)115 mΩ max @ VGS = 10 V / ID = 5.5 A - enables <100 mW conduction loss at 5.5 A, critical for thermally constrained laptop PCBs.
RDS(on)222.5 mΩ max @ VGS = 4.5 V / ID = 5.5 A - ensures reliable turn-on with standard 5 V or 3.3 V controller outputs.
Ciss660 pF typ @ VDS = 10 V - reduces gate drive power and enables >1 MHz switching without excessive driver stress.
EAS12.1 mJ - withstands single-pulse inductive energy events common during load transients in VRMs.
trr25 ns - minimizes reverse recovery losses and EMI generation in synchronous rectification mode.
QG7.1 nC - balances switching speed and gate driver complexity for 500 kHz–2 MHz converter designs.

Pinout & Package

UPA2706GR-E1-A is housed in a Power SOP8 (also known as PSOP8 or SOP-8L) package with exposed drain pad for enhanced thermal dissipation. The package measures 6.0 mm × 4.4 mm × 1.8 mm (max) and is rated for Tch = 150°C.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon return path for load current; internally bonded to substrate; connects to power ground plane.
4GateControl terminal requiring <7.1 nC charge for full enhancement; sensitive to ESD (protected by internal diode).
5, 6, 7, 8DrainMain power output node; pins 5–8 and exposed bottom pad form low-inductance, high-current drain connection.

Key Features

FeatureDesign Value
Logic-level gate drive supportGuaranteed RDS(on) ≤ 22.5 mΩ at VGS = 4.5 V - eliminates need for gate boosters in 5 V/3.3 V controller designs.
Low gate chargeQG = 7.1 nC - reduces driver power loss and enables clean, fast transitions even with small SOT-23 drivers.
Fast body diode recoverytrr = 25 ns - suppresses shoot-through risk and voltage overshoot during dead-time in synchronous buck stages.
Avalanche-rated operationEAS = 12.1 mJ - provides inherent ruggedness against inductive switching faults without external snubbers.

Applications

High-Efficiency Notebook CPU VRMUSB-C PD Buck Converter

Use Scenario: Primary high-side switch in 1–2 phase 12 V → 1.0–1.35 V CPU core supply delivering up to 40 A per phase.

IC Role / Device Role / Timing Role: High-side synchronous rectifier controlled by PWM signal from multiphase controller (e.g., ISL95836).

Use Value: 15 mΩ RDS(on) limits conduction loss to <500 mW at 20 A, while 25 ns trr prevents cross-conduction with low-side FET.

Use Scenario: Step-down regulator converting 20 V USB-C PD input to 5 V/9 V/15 V system rails in portable accessories.

IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz–1 MHz with 4.5 V gate drive from integrated controller.

Use Value: 22.5 mΩ RDS(on) at 4.5 V ensures >92% efficiency at 3 A load; low Ciss eases EMI filtering requirements.

Industrial 24 V DC/DC ModuleEmbedded System Point-of-Load Regulator

Use Scenario: 24 V input to 5 V/3.3 V conversion in DIN-rail mounted PLC I/O modules with space-constrained layout.

IC Role / Device Role / Timing Role: High-efficiency primary switch in isolated or non-isolated buck converter with fixed-frequency control.

Use Value: Power SOP8 footprint allows compact layout; 12.1 mJ EAS tolerates inductive kickback from solenoid loads sharing same 24 V rail.

Use Scenario: Local 12 V → 3.3 V regulation for FPGA or microcontroller subsystems on dense embedded boards.

IC Role / Device Role / Timing Role: Low-voltage, high-current switch in compact 2-layer PCB design where thermal relief is limited.

Use Value: Exposed drain pad and 62.5°C/W θch-A enable 2 W dissipation on minimal copper area; 150°C Tch rating supports sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si2302DS-T1-E3RDS(on) = 35 mΩ @ 4.5 V; SOT-23 package; lower current rating (ID(DC) = 2.9 A).Not suitable for >3 A continuous loads; limited thermal mass for sustained 2 W dissipation.Select only for ultra-low-cost, low-power auxiliary rails where size outweighs efficiency.
IRLML6344TRPBFRDS(on) = 22 mΩ @ 4.5 V; same Power SO-8 footprint; higher QG (12.5 nC) and Ciss (920 pF).Slower switching and higher gate drive loss; requires stronger driver for >1 MHz operation.Acceptable for 300–500 kHz designs where gate drive capability exceeds 1 A peak.

Compared with Si2302DS-T1-E3 and IRLML6344TRPBF, UPA2706GR-E1-A offers superior RDS(on)/QG ratio and proven avalanche ruggedness - making it optimal for thermally demanding, high-frequency notebook and industrial DC/DC applications where reliability and efficiency are co-prioritized.

Availability

UPA2706GR-E1-A is available at Aetrix Electronics and suitable for high-efficiency notebook CPU VRMs, USB-C PD buck converters, and industrial 24 V DC/DC modules requiring stable component supply and long-lifecycle support.

Supply support for UPA2706GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The UPA2706GR-E1-A belongs to Renesas' legacy µPA series of logic-level power MOSFETs engineered specifically for high-density, high-efficiency DC/DC conversion in portable computing and embedded power systems.

FAQ

What is the maximum continuous drain current rating for UPA2706GR-E1-A?

The UPA2706GR-E1-A is rated for ±11 A DC drain current at TA = 25°C when mounted on a 1200 mm² ceramic substrate. Derating applies above 25°C ambient; at 75°C, usable current drops to approximately ±6.5 A based on the published thermal resistance curve and power limit.

Does UPA2706GR-E1-A support 3.3 V gate drive in practice?

UPA2706GR-E1-A does not guarantee full enhancement at 3.3 V gate drive. Its RDS(on)2 spec is defined at VGS = 4.5 V (22.5 mΩ max). At 3.3 V, RDS(on) rises significantly - typical data shows ~45 mΩ - increasing conduction loss by >2×. Use only with 4.5 V or higher gate drive for optimal performance.

Is UPA2706GR-E1-A RoHS compliant and lead-free?

Yes, UPA2706GR-E1-A complies with EU RoHS Directive requirements. Renesas confirms lead-free termination and halogen-free packaging for this part, consistent with its manufacturing date post-2006 and alignment with industry environmental standards cited in official product change notices.

What is the purpose of the internal gate-source protection diode in UPA2706GR-E1-A?

The internal gate-source diode in UPA2706GR-E1-A serves as an ESD protection element, clamping transient voltages to prevent gate oxide breakdown. However, Renesas explicitly states that external protection remains mandatory if overvoltage exceeding ±20 V may occur - the internal diode alone is insufficient for system-level surge immunity.

Can UPA2706GR-E1-A be used in avalanche mode repeatedly?

No. UPA2706GR-E1-A is rated for single-pulse avalanche only (EAS = 12.1 mJ, IAS = 11 A). Repetitive avalanche operation is not characterized or guaranteed. Designers must avoid conditions causing repeated inductive energy dumping into the device - use snubbers, clamp circuits, or topology changes to prevent recurrence.

UPA2706GR-E1-A Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-SOIC (0.173", 4.40mm Width)
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Rds On (Max) @ Id, Vgs:
15mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
7.1 nC @ 5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
660 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
3W (Ta), 15W (Tc)
Operating Temperature:
150°C
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOP

UPA2706GR-E1-A FAQ

1.How can I place an order for UPA2706GR-E1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2706GR-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2706GR-E1-A reliable?

The price and inventory of UPA2706GR-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2706GR-E1-A is usually 5 days.

3.What payment methods are accepted for UPA2706GR-E1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2706GR-E1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2706GR-E1-A?

UPA2706GR-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2706GR-E1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2706GR-E1-A?

For technical support, including UPA2706GR-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2706GR-E1-A requirements.

6.How does Aetrix verify that UPA2706GR-E1-A is sourced from the original manufacturer or authorized distributors?

All UPA2706GR-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2706GR-E1-A meets industry standards.

7.What is the process for return or replacement of UPA2706GR-E1-A?

All UPA2706GR-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2706GR-E1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2706GR-E1-A part is unused and in its original packaging.

Return procedure for UPA2706GR-E1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

UPA2706GR-E1-A Tags

  • UPA2706GR-E1-A
  • UPA2706GR-E1-A PDF
  • UPA2706GR-E1-A Datasheet
  • UPA2706GR-E1-A Specifications
  • UPA2706GR-E1-A Images
  • Renesas
  • Renesas UPA2706GR-E1-A
  • Buy UPA2706GR-E1-A
  • UPA2706GR-E1-A Price
  • UPA2706GR-E1-A Distributor
  • UPA2706GR-E1-A Supplier
  • UPA2706GR-E1-A Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER