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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2706GR-E1-AT

Name: UPA2706GR-E1-AT
Brand: Renesas
SKU: UPA2706GR-E1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2706GR-E1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.173", 4.40mm Width)

Datasheet:: UPA2706GR-E1-AT.pdf

Description:: UPA2706GR-E1-AT - MOS FIELD EFFE

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Product details

Overview

UPA2706GR-E1-AT from Renesas Electronics is an N-channel power MOSFET in Power HSOP8 package, designed for DC/DC converter and power management in notebook computers. It delivers R_DS(on) = 15 mΩ max at V_GS = 10 V / I_D = 5.5 A, supports 30 V V_DSS, and handles ±44 A pulsed drain current with integrated body diode and ESD protection.

For engineers reviewing the UPA2706GR-E1-AT datasheet, UPA2706GR-E1-AT pinout, UPA2706GR-E1-AT application, or UPA2706GR-E1-AT equivalent, key selection criteria include low-voltage gate drive capability (R_DS(on) = 22.5 mΩ max at V_GS = 4.5 V), avalanche energy rating (E_AS = 12.1 mJ), thermal performance on standard PCBs, and compatibility with high-frequency synchronous buck topologies.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching in high-efficiency point-of-load converters. Its dual R_DS(on) specification (15 mΩ @ 10 V, 22.5 mΩ @ 4.5 V) confirms native support for 5 V and 3.3 V gate drive rails common in notebook CPU VRMs.

The device integrates a body diode with V_F(S-D) = 0.84 V at I_F = 11 A and t_rr = 25 ns, enabling efficient synchronous rectification or freewheeling operation. Its C_iss = 660 pF and Q_G = 7.1 nC support switching frequencies up to 1 MHz without excessive gate drive loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports input rails up to 24 V in buck converters with margin for voltage spikes.
R_DS(on)1	15 mΩ max @ V_GS = 10 V, I_D = 5.5 A - Enables <150 mW conduction loss at 5.5 A in high-current phases.
R_DS(on)2	22.5 mΩ max @ V_GS = 4.5 V, I_D = 5.5 A - Ensures stable operation with logic-level gate drivers in space-constrained notebooks.
E_AS	12.1 mJ - Withstands single-pulse inductive energy during load dump or transient events without failure.
C_iss	660 pF typ @ V_DS = 10 V - Limits gate drive current demand and enables clean turn-on with low-R_G drivers.
t_r/t_f	5 ns / 6 ns - Supports >500 kHz switching with minimal overlap loss in synchronous buck stages.
T_ch max	150 °C - Allows full-rated power dissipation under sustained thermal stress in compact chassis.

Pinout & Package

UPA2706GR-E1-AT uses the Power HSOP8 surface-mount package (6.0 mm × 4.4 mm × 1.49 mm), featuring exposed drain pads on pins 5–9 for enhanced thermal conduction to PCB copper. The heat spreader design reduces R_th(ch–A) to 12.5°C/W on 1-inch² glass epoxy board.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; tied to power ground plane for low-inductance routing.
4	Gate	Control terminal requiring <7.1 nC charge; routed away from noisy power traces to prevent false turn-on.
5–9	Drain	High-current output node connected to inductor and input capacitor; multiple pins reduce current density and thermal resistance.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	22.5 mΩ max enables use with 5 V or 3.3 V PWM controllers without level-shifting circuitry.
Integrated ESD protection diode	Gate-source Zener clamps ±20 V transients, reducing need for external TVS in portable designs.
Fast body diode recovery	t_rr = 25 ns and Q_rr = 17 nC minimize reverse recovery loss in synchronous rectification mode.
Avalanche-rated structure	Rated for 11 A single-pulse I_AS and 12.1 mJ E_AS, supporting robustness against inductive kickback in DC/DC stages.
Thermally enhanced package	Power HSOP8's exposed drain pad allows direct thermal coupling to inner-layer copper, lowering junction-to-board R_th.

Applications

High-Efficiency Notebook CPU VRM	Synchronous Buck Converter for GPU Power
Use Scenario: Regulating core voltage (0.7–1.5 V) for Intel/AMD mobile processors under dynamic load from 0 to 40 A. IC Role / Device Role / Timing Role: High-side switch in multiphase buck topology, operating at 300–600 kHz with precise duty-cycle control. Use Value: Low R_DS(on) at 4.5 V ensures minimal conduction loss across load range; fast switching minimizes dead-time losses.	Use Scenario: Delivering 0.8–1.2 V at up to 30 A to discrete graphics processing units in ultrabooks and gaming laptops. IC Role / Device Role / Timing Role: Low-side synchronous rectifier paired with complementary high-side FET, driven by dedicated gate controller. Use Value: Body diode V_F(S-D) = 0.84 V and t_rr = 25 ns reduce freewheeling loss and EMI compared to Schottky alternatives.
USB-C PD Power Path Switch	Portable SSD Main Power Switch
Use Scenario: Enabling/disabling 20 V input path in USB-C power delivery adapters with overvoltage and short-circuit protection. IC Role / Device Role / Timing Role: Load switch controlling power flow between AC/DC adapter and internal DC bus, rated for 30 V continuous operation. Use Value: V_DSS = 30 V provides 10 V margin above 20 V PD spec; avalanche rating absorbs inductive surges during hot-plug events.	Use Scenario: Isolating NVMe SSD main rail (3.3 V) from host system during sleep/wake transitions and thermal throttling. IC Role / Device Role / Timing Role: Single-N high-side load switch with controlled slew rate, driven directly by 3.3 V GPIO. Use Value: R_DS(on) = 22.5 mΩ max at V_GS = 4.5 V ensures <100 mV drop at 3 A, preserving voltage margin for PCIe signaling.

High-Efficiency Notebook CPU VRM

Synchronous Buck Converter for GPU Power

Use Scenario: Regulating core voltage (0.7–1.5 V) for Intel/AMD mobile processors under dynamic load from 0 to 40 A.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck topology, operating at 300–600 kHz with precise duty-cycle control.

Use Value: Low R_DS(on) at 4.5 V ensures minimal conduction loss across load range; fast switching minimizes dead-time losses.

Use Scenario: Delivering 0.8–1.2 V at up to 30 A to discrete graphics processing units in ultrabooks and gaming laptops.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier paired with complementary high-side FET, driven by dedicated gate controller.

Use Value: Body diode V_F(S-D) = 0.84 V and t_rr = 25 ns reduce freewheeling loss and EMI compared to Schottky alternatives.

USB-C PD Power Path Switch

Portable SSD Main Power Switch

Use Scenario: Enabling/disabling 20 V input path in USB-C power delivery adapters with overvoltage and short-circuit protection.

IC Role / Device Role / Timing Role: Load switch controlling power flow between AC/DC adapter and internal DC bus, rated for 30 V continuous operation.

Use Value: V_DSS = 30 V provides 10 V margin above 20 V PD spec; avalanche rating absorbs inductive surges during hot-plug events.

Use Scenario: Isolating NVMe SSD main rail (3.3 V) from host system during sleep/wake transitions and thermal throttling.

IC Role / Device Role / Timing Role: Single-N high-side load switch with controlled slew rate, driven directly by 3.3 V GPIO.

Use Value: R_DS(on) = 22.5 mΩ max at V_GS = 4.5 V ensures <100 mV drop at 3 A, preserving voltage margin for PCIe signaling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-E3	R_DS(on) = 35 mΩ @ 4.5 V; SOT-23 package; lower power rating (P_D = 0.71 W).	Targeted at sub-2 A loads; unsuitable for notebook VRM phases due to thermal and current limits.	Select only for low-power auxiliary rails where footprint and cost outweigh efficiency needs.
IRLML6344TRPBF	R_DS(on) = 28 mΩ @ 4.5 V; Micro3 package; higher C_iss (820 pF) increases gate drive loss.	Valid for 5–10 A mid-power converters but exhibits slower switching and reduced avalanche margin (E_AS = 5.2 mJ).	Prefer when existing layout uses Micro3 footprint and gate driver can handle higher Q_G.

Compared with Si2302DS-T1-E3 and IRLML6344TRPBF, UPA2706GR-E1-AT offers superior R_DS(on) at 4.5 V, higher pulsed current capability (±44 A), and proven avalanche robustness-making it uniquely suited for high-density, high-reliability notebook power stages where thermal headroom and transient immunity are critical.

Availability

UPA2706GR-E1-AT is available at Aetrix Electronics and suitable for notebook computer VRMs, GPU power supplies, USB-C PD adapters, and portable SSD power management requiring stable component supply and long-term industrial availability.

Supply support for UPA2706GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The UPA2706GR-E1-AT belongs to Renesas' µPA series of power MOSFETs engineered specifically for high-efficiency, space-constrained DC/DC conversion in portable computing platforms.

FAQ

What is the maximum continuous drain current rating for UPA2706GR-E1-AT at 25°C case temperature?

The UPA2706GR-E1-AT has a maximum continuous drain current (I_D(DC)) of ±20 A when mounted on a glass epoxy board (1 inch × 1 inch × 0.8 mm) at T_C = 25°C. This rating assumes proper PCB copper area for thermal conduction; derating applies above 25°C per the datasheet's PT vs. TC curve.

Does UPA2706GR-E1-AT support 3.3 V gate drive in practical notebook applications?

Yes, UPA2706GR-E1-AT is characterized for R_DS(on) = 22.5 mΩ max at V_GS = 4.5 V and I_D = 5.5 A, and further specified at 29 mΩ max at V_GS = 4.0 V. While not explicitly rated at 3.3 V, its gate threshold (V_GS(off) = 1.5–2.5 V) and transfer characteristics confirm usable channel enhancement down to ~3.0 V, making it viable with margin in 3.3 V-driven synchronous buck stages.

What is the purpose of the gate-source Zener diode shown in the UPA2706GR-E1-AT equivalent circuit?

The gate-source Zener diode in the UPA2706GR-E1-AT equivalent circuit provides on-chip electrostatic discharge (ESD) protection, clamping transient voltages to ±20 V. It safeguards the thin gate oxide during handling and assembly but is not intended for repetitive overvoltage suppression; external protection remains necessary in systems exposed to sustained overvoltage conditions.

Can UPA2706GR-E1-AT be used as a low-side switch in a synchronous buck converter?

Yes, UPA2706GR-E1-AT is commonly deployed as the low-side switch in synchronous buck converters due to its low R_DS(on), fast body diode (t_rr = 25 ns), and ability to commutate high-frequency currents. Its source terminals (pins 1–3) provide low-inductance grounding, and the drain terminals (pins 5–9) accommodate high-current return paths to the inductor and output capacitor.

Is UPA2706GR-E1-AT compliant with RoHS and lead-free soldering requirements?

Yes, UPA2706GR-E1-AT is RoHS-compliant and qualified for lead-free reflow soldering per J-STD-020. The "E1" suffix in the part number denotes lead-free plating, and Renesas confirms compliance with EU RoHS Directive 2011/65/EU and related amendments. Full material declarations and test reports are available through Renesas' environmental compliance portal.

UPA2706GR-E1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.173", 4.40mm Width)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 7.1 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 660 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3W (Ta), 15W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

UPA2706GR-E1-AT FAQ

1.How can I place an order for UPA2706GR-E1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2706GR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2706GR-E1-AT reliable?

The price and inventory of UPA2706GR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2706GR-E1-AT is usually 5 days.

3.What payment methods are accepted for UPA2706GR-E1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2706GR-E1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2706GR-E1-AT?

UPA2706GR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2706GR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2706GR-E1-AT?

For technical support, including UPA2706GR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2706GR-E1-AT requirements.

6.How does Aetrix verify that UPA2706GR-E1-AT is sourced from the original manufacturer or authorized distributors?

All UPA2706GR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2706GR-E1-AT meets industry standards.

7.What is the process for return or replacement of UPA2706GR-E1-AT?

All UPA2706GR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2706GR-E1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2706GR-E1-AT part is unused and in its original packaging.

Return procedure for UPA2706GR-E1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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