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Renesas UPA2706GR-E2-AT
- Part No.:
- UPA2706GR-E2-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.173", 4.40mm Width)
- Datasheet:
-
UPA2706GR-E2-AT.pdf
- Description:
- UPA2706GR-E2-AT - MOS FIELD EFFE
- Quantity:
- Payment:
- Shipping:
Inventory:14,759
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Product details
Overview
UPA2706GR-E2-AT from Renesas Electronics is an N-channel power MOSFET in Power HSOP8 package, designed for DC/DC converter and power management in notebook computers. It delivers RDS(on) = 15 mΩ max at VGS = 10 V / ID = 5.5 A, supports ±20 V gate-source voltage, and handles 11 A continuous drain current on PCB-mounted conditions. Its low Ciss (660 pF typ.) enables fast switching in high-frequency synchronous buck stages.
For engineers reviewing the UPA2706GR-E2-AT datasheet, UPA2706GR-E2-AT pinout, UPA2706GR-E2-AT application, or UPA2706GR-E2-AT equivalent, this page provides verified electrical parameters, thermal derating curves, avalanche capability (EAS = 12.1 mJ), body diode recovery (trr = 25 ns), and validated alternative parts for notebook power rail design.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and fast switching in synchronous rectification. Its dual RDS(on) specs - 15 mΩ @ 10 V and 22.5 mΩ @ 4.5 V - reflect robust gate drive compatibility with standard PWM controllers and integrated power stages. The device integrates a built-in gate-source ESD protection diode but requires external gate clamping for high-dV/dt environments.
Thermal performance is defined by Rth(ch–C) = 8.33°C/W (case-to-channel) and a 150°C maximum channel temperature. Safe operating area (SOA) is limited by both RDS(on) conduction and transient power dissipation, with pulse-width-dependent derating per JEDEC JESD51-14.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 5 V–12 V input rails in notebook VRMs |
| RDS(on)1 | 15 mΩ max @ VGS = 10 V, ID = 5.5 A - Enables <150 mW conduction loss at 5.5 A |
| RDS(on)2 | 22.5 mΩ max @ VGS = 4.5 V, ID = 5.5 A - Ensures stable operation with 5 V logic-level gate drivers |
| Ciss | 660 pF typ. @ VDS = 10 V - Reduces gate drive power and speeds up turn-on in 300–500 kHz converters |
| ID(DC) | 11 A @ TC = 25°C on 1″×1″ glass epoxy board - Defines usable current in compact laptop PCB layouts |
| EAS | 12.1 mJ - Supports unclamped inductive switching in synchronous buck output stage without snubber |
| trr | 25 ns @ IF = 11 A, di/dt = 100 A/µs - Minimizes reverse recovery loss during high-side FET commutation |
Pinout & Package
UPA2706GR-E2-AT uses the Power HSOP8 surface-mount package (6.0 mm × 4.4 mm × 1.49 mm), featuring exposed drain pads on pins 5–9 for thermal enhancement and source terminals on pins 1–3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; tied to power ground plane for low-inductance layout |
| 4 | Gate | Control terminal requiring <7.1 nC total charge; sensitive to ESD (±20 V rating) |
| 5–9 | Drain | High-current output node connected to inductor and output capacitor; thermally coupled to heatsink via exposed pad |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 22.5 mΩ max enables use with 5 V gate drivers in space-constrained notebook VRMs |
| Fast body diode recovery | 25 ns trr reduces cross-conduction loss in synchronous buck topologies |
| High avalanche energy rating | 12.1 mJ EAS allows reliable operation under transient overcurrent without external clamping |
| Small footprint thermal package | Power HSOP8 delivers 8.33°C/W Rth(ch–C) in minimal PCB area for thin-profile laptops |
Applications
| High-Frequency Synchronous Buck Converter | Notebook CPU Core Voltage Regulator |
|---|---|
Use Scenario: 300–600 kHz step-down conversion from 12 V or 19 V adapter input to 0.8–1.5 V CPU core supply. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET handling continuous 11 A output current with minimal conduction loss. Use Value: 15 mΩ RDS(on) limits I²R loss to ≤900 mW at 11 A, directly improving VRM efficiency and reducing thermal load on motherboard. | Use Scenario: Dual-phase or multiphase VRM supplying dynamic current bursts up to 44 A peak to modern mobile CPUs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch placed in parallel configuration per phase for current sharing. Use Value: 22.5 mΩ RDS(on) at 4.5 V gate drive ensures stable on-resistance across controller gate voltage swing, minimizing phase imbalance. |
| DC/DC Power Management IC Companion | Thin-and-Light Laptop Battery Protection Circuit |
Use Scenario: Paired with integrated PWM controller (e.g., ISL9583x) in ultrabook mainboard power delivery. IC Role / Device Role / Timing Role: Discrete power switch complementing monolithic controller's gate drive capability and current handling limit. Use Value: 7.1 nC QG matches typical 1–2 A peak gate driver outputs, enabling clean 5–10 ns rise/fall times without external buffer. | Use Scenario: Load switch between battery pack and system power rail in sub-15 mm chassis designs. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch with integrated body diode forward conduction path. Use Value: 0.84 V VF(S-D) at 11 A ensures <9.2 W conduction loss during battery discharge, preserving runtime in compact form factors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7852DP-T1-GE3 | RDS(on) = 12.5 mΩ @ 10 V, but larger SO-8 package (no exposed drain pad); Ciss = 1020 pF | Lacks thermal performance for sustained 11 A in HSOP8 footprint; better suited for lower-current, cost-sensitive designs | Select when board layout allows larger SO-8 and thermal budget permits higher Rth |
| IRF7759TRPBF | RDS(on) = 11.5 mΩ @ 10 V, PQFN 5×6 mm package; Ciss = 1240 pF; no specified EAS | Higher gate charge (19 nC) increases driver loss; lacks published avalanche rating for unclamped switching | Prefer only if lower RDS(on) justifies added gate drive complexity and missing EAS validation |
Compared with Si7852DP-T1-GE3 and IRF7759TRPBF, UPA2706GR-E2-AT uniquely balances low gate charge (7.1 nC), validated avalanche ruggedness (12.1 mJ), and thermal-efficient Power HSOP8 packaging-making it optimal for space- and efficiency-critical notebook VRMs where layout area and reliability under transient stress are primary constraints.
Availability
UPA2706GR-E2-AT is available at Aetrix Electronics and suitable for notebook computer DC/DC converters, CPU voltage regulators, and portable device power management systems requiring stable component supply and long-term lifecycle support.
Supply support for UPA2706GR-E2-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.
The UPA2706GR-E2-AT belongs to Renesas' legacy µPA series of discrete power MOSFETs, engineered specifically for high-efficiency, high-density power conversion in portable computing platforms.
FAQ
What is the maximum continuous drain current rating for UPA2706GR-E2-AT under standard PCB mounting conditions?
The UPA2706GR-E2-AT supports 11 A continuous drain current (ID(DC)) when mounted on a 1 inch × 1 inch × 0.8 mm glass epoxy board at TC = 25°C. This rating assumes proper thermal vias to inner ground planes and accounts for the device's Rth(ch–C) = 8.33°C/W. Exceeding this current without enhanced cooling risks exceeding the 150°C channel temperature limit.
Does UPA2706GR-E2-AT support 4.5 V gate drive for logic-level operation?
Yes, UPA2706GR-E2-AT is fully characterized for 4.5 V gate drive: its RDS(on)2 is guaranteed ≤22.5 mΩ at VGS = 4.5 V and ID = 5.5 A. This makes UPA2706GR-E2-AT compatible with common 5 V PWM controllers and integrated power stages used in notebook VRMs without requiring level-shifting circuitry.
What is the significance of the 12.1 mJ single-pulse avalanche energy (EAS) specification for UPA2706GR-E2-AT?
The 12.1 mJ EAS rating confirms UPA2706GR-E2-AT can safely absorb inductive energy during unclamped inductive switching events-such as synchronous buck high-side FET turn-off-without failure. Tested at VDD = 15 V, L = 100 µH, and starting Tch = 25°C, this validates robustness in real-world VRM fault transients where snubbers are omitted for cost and size reduction.
How does the Power HSOP8 package of UPA2706GR-E2-AT improve thermal performance compared to standard SO-8?
The Power HSOP8 package of UPA2706GR-E2-AT features an exposed drain pad spanning pins 5–9, enabling direct thermal coupling to the PCB copper pour. With Rth(ch–C) = 8.33°C/W, it achieves ~40% lower junction-to-case resistance than standard SO-8 equivalents-critical for maintaining <110°C channel temperature under 11 A DC load in thermally constrained laptop motherboards.
Is UPA2706GR-E2-AT suitable for automotive applications?
No, UPA2706GR-E2-AT is rated for "Standard" quality grade per Renesas documentation, intended for computers, office equipment, and consumer electronics-not automotive or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature range validation, or automotive-specific reliability testing. For automotive power switches, Renesas offers separate qualified product lines such as the RV series.
UPA2706GR-E2-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.173", 4.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.1 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 660 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 15W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
UPA2706GR-E2-AT FAQ
1.How can I place an order for UPA2706GR-E2-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2706GR-E2-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2706GR-E2-AT reliable?
The price and inventory of UPA2706GR-E2-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2706GR-E2-AT is usually 5 days.
3.What payment methods are accepted for UPA2706GR-E2-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2706GR-E2-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2706GR-E2-AT?
UPA2706GR-E2-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2706GR-E2-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2706GR-E2-AT?
For technical support, including UPA2706GR-E2-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2706GR-E2-AT requirements.
6.How does Aetrix verify that UPA2706GR-E2-AT is sourced from the original manufacturer or authorized distributors?
All UPA2706GR-E2-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2706GR-E2-AT meets industry standards.
7.What is the process for return or replacement of UPA2706GR-E2-AT?
All UPA2706GR-E2-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2706GR-E2-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2706GR-E2-AT part is unused and in its original packaging.
Return procedure for UPA2706GR-E2-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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