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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2708GR-E1-A

Name: UPA2708GR-E1-A
Brand: Renesas
SKU: UPA2708GR-E1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2708GR-E1-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: UPA2708GR-E1-A.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

UPA2708GR-E1-A from Renesas Electronics is an N-channel power MOSFET designed for DC/DC converter and notebook computer power management applications. It features R_DS(on)1 = 5.5 mΩ max at V_GS = 10 V and I_D = 9.0 A, R_DS(on)2 = 7.5 mΩ max at V_GS = 4.5 V and I_D = 9.0 A, C_iss = 4700 pF typ, V_DSS = 30 V, and Power SOP8 surface-mount package.

For engineers reviewing the UPA2708GR-E1-A datasheet, UPA2708GR-E1-A pinout, UPA2708GR-E1-A application, or UPA2708GR-E1-A equivalent, key selection criteria include low-voltage gate drive capability (4.5 V logic-level compatibility), high-pulse current rating (±68 A), avalanche ruggedness (E_AS = 28.9 mJ), thermal resistance (R_th(ch-L) = 30 °C/W), and Pb-free Power SOP8 packaging for compact notebook power stages.

Technical Context

The UPA2708GR-E1-A employs a trench-gate N-channel enhancement-mode structure optimized for synchronous rectification and high-frequency switching in buck converters. Its low R_DS(on) at 4.5 V gate drive enables direct interfacing with PWM controllers operating at 3.3 V or 5 V logic levels, while its 30 V V_DSS rating targets 12 V input rail systems with margin.

Thermal design leverages the Power SOP8 package's low channel-to-drain-lead resistance (30 °C/W) for efficient heat transfer to PCB copper, and its body diode exhibits t_rr = 33 ns and Q_rr = 27 nC under specified conditions - critical for minimizing shoot-through losses in synchronous topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports 12 V nominal input rails with 2.5× voltage margin for transient spikes in notebook DC/DC stages.
R_DS(on)1	5.5 mΩ max @ V_GS = 10 V, I_D = 9 A - Enables <100 mW conduction loss at 9 A, reducing thermal load in high-current output stages.
R_DS(on)2	7.5 mΩ max @ V_GS = 4.5 V, I_D = 9 A - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.
C_iss	4700 pF typ @ V_DS = 10 V - Balances switching speed and gate drive strength requirements for ~500 kHz–1 MHz converter operation.
Q_G	38 nC - Determines required gate driver peak current (e.g., >3.8 A for 10 ns rise time), impacting driver IC selection.
E_AS	28.9 mJ - Provides single-pulse avalanche energy handling for inductive switching stress during fault events or startup.
t_rr	33 ns - Limits reverse recovery losses in synchronous rectifier configurations, improving efficiency at light loads.

Pinout & Package

UPA2708GR-E1-A is housed in a Pb-free Power SOP8 package (6.0 mm × 4.4 mm × 1.8 mm max), featuring exposed drain leads on pins 5–8 for enhanced thermal conduction to PCB copper. The package supports reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; tied to power ground plane; connects internally to body diode cathode.
4	Gate	Control terminal requiring low-impedance drive; sensitive to ESD; must be routed away from noisy signals.
5, 6, 7, 8	Drain	High-current input node; electrically and thermally connected to exposed pad; requires wide copper pour for thermal dissipation.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on) ≤ 7.5 mΩ at V_GS = 4.5 V enables direct interface with common PWM ICs (e.g., ISL6208, RT8205) without gate boosters.
Low gate charge	Q_G = 38 nC minimizes gate driver power loss and allows faster switching transitions in high-frequency converters.
Enhanced avalanche ruggedness	E_AS = 28.9 mJ supports robust operation during inductive turn-off transients in synchronous buck stages without external snubbers.
Optimized body diode	t_rr = 33 ns and Q_rr = 27 nC reduce cross-conduction losses and EMI in synchronous rectification mode.
Pb-free Power SOP8	RoHS-compliant surface-mount package with thermal pad (pins 5–8) delivers R_th(ch-L) = 30 °C/W for efficient PCB-based cooling in space-constrained notebooks.

Applications

High-Efficiency Notebook CPU VRM	Synchronous Buck Converter for GPU Core Supply
Use Scenario: Primary high-side switch in multiphase 1.0–1.3 V CPU core supply delivering up to 60 A per phase. IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 500 kHz–1 MHz with synchronous rectification. Use Value: Low R_DS(on)2 ensures minimal conduction loss at 4.5 V gate drive from phase controller, while low Q_G enables fast switching with reduced driver overhead.	Use Scenario: Upper FET in dual-phase 0.8–1.1 V GPU core regulator powering discrete graphics modules. IC Role / Device Role / Timing Role: Main switching element in high-density, thermally constrained VRM layout. Use Value: Power SOP8 thermal pad and R_th(ch-L) = 30 °C/W allow sustained 17 A DC current without heatsink, supporting compact board area.
DC/DC Step-Down for SSD Power Rail	Hot-Swap Controller Back-End Switch
Use Scenario: 3.3 V or 5 V intermediate bus converter supplying NAND flash and controller in M.2 NVMe SSDs. IC Role / Device Role / Timing Role: Main power switch in small-footprint, high-efficiency buck stage with tight thermal envelope. Use Value: 30 V V_DSS provides margin against 5 V input surges; low C_iss enables stable operation with minimal gate drive capacitance.	Use Scenario: Inrush-limiting and fault-isolation switch in 12 V hot-swap module for server backplanes. IC Role / Device Role / Timing Role: Controlled turn-on/turn-off power switch protecting downstream circuitry during insertion. Use Value: Single-pulse avalanche rating (IAS = 17 A, EAS = 28.9 mJ) withstands inductive kickback during rapid current interruption.

High-Efficiency Notebook CPU VRM

Synchronous Buck Converter for GPU Core Supply

Use Scenario: Primary high-side switch in multiphase 1.0–1.3 V CPU core supply delivering up to 60 A per phase.

IC Role / Device Role / Timing Role: High-current, high-frequency power switch operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: Low R_DS(on)2 ensures minimal conduction loss at 4.5 V gate drive from phase controller, while low Q_G enables fast switching with reduced driver overhead.

Use Scenario: Upper FET in dual-phase 0.8–1.1 V GPU core regulator powering discrete graphics modules.

IC Role / Device Role / Timing Role: Main switching element in high-density, thermally constrained VRM layout.

Use Value: Power SOP8 thermal pad and R_th(ch-L) = 30 °C/W allow sustained 17 A DC current without heatsink, supporting compact board area.

DC/DC Step-Down for SSD Power Rail

Hot-Swap Controller Back-End Switch

Use Scenario: 3.3 V or 5 V intermediate bus converter supplying NAND flash and controller in M.2 NVMe SSDs.

IC Role / Device Role / Timing Role: Main power switch in small-footprint, high-efficiency buck stage with tight thermal envelope.

Use Value: 30 V V_DSS provides margin against 5 V input surges; low C_iss enables stable operation with minimal gate drive capacitance.

Use Scenario: Inrush-limiting and fault-isolation switch in 12 V hot-swap module for server backplanes.

IC Role / Device Role / Timing Role: Controlled turn-on/turn-off power switch protecting downstream circuitry during insertion.

Use Value: Single-pulse avalanche rating (IAS = 17 A, EAS = 28.9 mJ) withstands inductive kickback during rapid current interruption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3 (Vishay)	V_DSS = 30 V, R_DS(on) = 5.2 mΩ @ 10 V but 9.0 mΩ @ 4.5 V; PowerPAK SO-8 package; higher C_iss = 5200 pF.	Less suitable for 4.5 V gate drive in space-constrained layouts due to higher R_DS(on)2 and larger package footprint.	Select when higher 10 V R_DS(on) priority outweighs 4.5 V drive performance and thermal pad integration.
IRF7470PBF (Infineon)	V_DSS = 30 V, R_DS(on) = 6.0 mΩ @ 10 V and 8.5 mΩ @ 4.5 V; SO-8 package; no exposed drain pad; R_th(ch-A) = 62 °C/W.	Limited thermal performance in high-current DC/DC stages due to absence of thermal pad and higher junction-to-ambient resistance.	Prefer for cost-sensitive, lower-power applications where PCB copper area is abundant and pulse currents remain below 12 A.

Compared with Si7852DP-T1-GE3 and IRF7470PBF, the UPA2708GR-E1-A delivers superior 4.5 V gate drive capability, lower thermal resistance via exposed drain leads, and tighter avalanche energy control - making it optimal for thermally dense, high-efficiency notebook and SSD power stages where layout area and thermal headroom are constrained.

Availability

UPA2708GR-E1-A is available at Aetrix Electronics and suitable for high-frequency DC/DC converters, notebook CPU/GPU VRMs, and SSD intermediate bus regulators requiring stable component supply and RoHS-compliant packaging.

Supply support for UPA2708GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.

The UPA2708GR series belongs to Renesas' legacy power MOSFET portfolio targeting portable computing power management, emphasizing low R_DS(on), logic-level drive, and thermal efficiency in ultra-thin form factors.

FAQ

What is the maximum continuous drain current rating for UPA2708GR-E1-A at 25°C ambient?

The UPA2708GR-E1-A has a DC drain current rating of ±17 A at T_A = 25°C when mounted on a 1 inch × 1 inch × 0.8 mm glass epoxy board. This rating assumes proper PCB copper area for thermal dissipation; derating is required above 25°C ambient per the datasheet's derating curve. Actual usable current depends on layout, airflow, and thermal vias - the UPA2708GR-E1-A's R_th(ch-L) = 30 °C/W enables higher sustained current than standard SO-8 devices.

Does UPA2708GR-E1-A support 3.3 V logic-level gate drive?

The UPA2708GR-E1-A is not fully characterized for guaranteed turn-on at 3.3 V gate drive. Its R_DS(on)2 specification is defined at V_GS = 4.5 V (7.5 mΩ max), and gate threshold voltage (V_GS(off)) ranges from 1.0 V to 2.5 V - meaning marginal conduction may occur at 3.3 V but with significantly elevated R_DS(on) and unpredictable thermal behavior. For reliable 3.3 V operation, a gate driver with bootstrapping or level-shifting is recommended alongside the UPA2708GR-E1-A.

What is the avalanche energy rating of UPA2708GR-E1-A and how is it tested?

The UPA2708GR-E1-A has a single-pulse avalanche energy rating of E_AS = 28.9 mJ, measured under standardized conditions: starting channel temperature of 25°C, V_DD = 15 V, L = 100 µH, R_G = 25 Ω, and gate drive transition from 20 V to 0 V. This rating validates the device's ability to absorb inductive switching energy without failure - critical for robustness in DC/DC converter high-side switching and hot-swap applications where the UPA2708GR-E1-A may experience unclamped inductive spikes.

How does the Power SOP8 package of UPA2708GR-E1-A improve thermal performance over standard SO-8?

The Power SOP8 package used by UPA2708GR-E1-A integrates an exposed drain lead (pins 5–8) that serves as both electrical connection and thermal conduction path to the PCB. This yields R_th(ch-L) = 30 °C/W - more than 2× better than typical SO-8 R_th(ch-A) = 62–114 °C/W - enabling higher power density and sustained current capability. Unlike standard SO-8, the UPA2708GR-E1-A's thermal pad must be soldered to a large copper pour with thermal vias to realize this benefit, directly enhancing reliability in notebook VRMs and SSD power stages.

Is UPA2708GR-E1-A suitable for automotive applications?

The UPA2708GR-E1-A is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics - not automotive systems. It lacks AEC-Q101 qualification, extended temperature range validation (−40°C to +125°C), or automotive-specific reliability testing. For automotive DC/DC or body control modules, Renesas offers qualified alternatives such as the RQ3E080AT or RV1C002UNT, whereas the UPA2708GR-E1-A remains appropriate for notebook, SSD, and industrial computing power management where "Standard" grade compliance suffices.

UPA2708GR-E1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA2708GR-E1-A FAQ

1.How can I place an order for UPA2708GR-E1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2708GR-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2708GR-E1-A reliable?

The price and inventory of UPA2708GR-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2708GR-E1-A is usually 5 days.

3.What payment methods are accepted for UPA2708GR-E1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2708GR-E1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2708GR-E1-A?

UPA2708GR-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2708GR-E1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2708GR-E1-A?

For technical support, including UPA2708GR-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2708GR-E1-A requirements.

6.How does Aetrix verify that UPA2708GR-E1-A is sourced from the original manufacturer or authorized distributors?

All UPA2708GR-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2708GR-E1-A meets industry standards.

7.What is the process for return or replacement of UPA2708GR-E1-A?

All UPA2708GR-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2708GR-E1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2708GR-E1-A part is unused and in its original packaging.

Return procedure for UPA2708GR-E1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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