Renesas UPA2708GR-E2-A
- Part No.:
- UPA2708GR-E2-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2708GR-E2-A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:50,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
UPA2708GR-E2-A from Renesas Electronics is an N-channel power MOSFET designed for DC/DC converter and power management in notebook computers. It delivers RDS(on)1 = 5.5 mΩ max at VGS = 10 V / ID = 9.0 A, RDS(on)2 = 7.5 mΩ max at VGS = 4.5 V / ID = 9.0 A, Ciss = 4700 pF typ, and supports ±17 A DC drain current in a Power SOP8 package.
For engineers reviewing the UPA2708GR-E2-A datasheet, UPA2708GR-E2-A pinout, UPA2708GR-E2-A application, or UPA2708GR-E2-A equivalent, key selection criteria include low-voltage gate drive capability (4.5 V logic-level compatibility), avalanche ruggedness (EAS = 28.9 mJ), thermal resistance (Rth(ch-L) = 30 °C/W), and body diode performance (VF(S-D) = 0.8 V at 17 A).
Technical Context
This MOSFET employs a trench-gate silicon process optimized for high-current, low-RDS(on) switching in synchronous buck converters. Its dual RDS(on) specs confirm stable conduction under both 10 V and 4.5 V gate drive-critical for modern CPU/GPU VRMs where driver ICs often operate at 5 V logic levels.
The device integrates a fast-recovery body diode (trr = 33 ns, Qrr = 27 nC) and exhibits controlled gate charge (QG = 38 nC, QGD = 12 nC), enabling efficient hard-switching operation up to several hundred kHz while minimizing shoot-through risk in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Supports input rails up to 24 V nominal with margin for transient spikes in notebook adapter and battery-input DC/DC stages. |
| RDS(on)1 | 5.5 mΩ max @ VGS = 10 V, ID = 9 A - Enables <100 mW conduction loss at 9 A, critical for thermally constrained laptop PCBs. |
| RDS(on)2 | 7.5 mΩ max @ VGS = 4.5 V, ID = 9 A - Ensures reliable turn-on with standard 5 V PWM controllers without level-shifting. |
| Ciss | 4700 pF typ @ VDS = 10 V - Low input capacitance reduces gate drive power and improves switching speed vs. legacy SO-8 MOSFETs. |
| EAS | 28.9 mJ - Withstands single-pulse inductive energy events (e.g., load dump, hot-swap) without failure in compact VRM designs. |
| trr | 33 ns - Minimizes reverse recovery losses during synchronous rectification, improving efficiency above 90% in 5–12 V output converters. |
| Rth(ch-L) | 30 °C/W - Enables direct thermal coupling to PCB copper pour via exposed drain pads, supporting >1.5 W continuous dissipation on 1-in² board area. |
Pinout & Package
UPA2708GR-E2-A is housed in a Power SOP8 (also known as PSOP8 or SOP-8L) surface-mount package with exposed drain leads for enhanced thermal performance. The package measures 6.0 × 4.4 × 1.8 mm and features gull-wing leads on 1.27 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; internally bonded to substrate; connects to ground plane for low-inductance current return. |
| 4 | Gate | Control terminal requiring <38 nC total charge; sensitive to ESD-requires gate resistor (RG ≥ 5 Ω) and TVS protection in layout. |
| 5, 6, 7, 8 | Drain | High-current output node; all four pins paralleled internally and externally to reduce lead inductance and thermal resistance to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed RDS(on) ≤ 7.5 mΩ at VGS = 4.5 V enables direct interface with 5 V microcontroller GPIO or PWM IC outputs without level shifters. |
| Low gate charge | QG = 38 nC and QGD = 12 nC minimize Miller plateau time, allowing clean 100+ kHz switching with <1 W gate driver loss. |
| Fast body diode | VF(S-D) = 0.8 V and trr = 33 ns reduce dead-time conduction loss and EMI in synchronous buck converters. |
| Avalanche-rated | Rated for single-pulse EAS = 28.9 mJ at Tch = 25°C-supports robust operation during overcurrent or short-circuit transients without external snubbers. |
| Pb-free construction | RoHS-compliant per ordering code "-E2-A"; no lead in external electrodes or internal terminations, suitable for lead-free reflow assembly. |
Applications
| High-Efficiency Notebook CPU VRM | USB-C PD Buck Converter |
|---|---|
Use Scenario: Primary high-side switch in 1–2 phase synchronous buck regulator supplying 0.8–1.5 V @ 30–60 A to mobile CPUs. IC Role / Device Role / Timing Role: High-current, low-RDS(on) power switch operating at 300–600 kHz with precise duty-cycle control. Use Value: 5.5 mΩ RDS(on) limits conduction loss to <2.5 W at 60 A, while 33 ns trr prevents cross-conduction loss during dead-time, sustaining >93% peak efficiency. | Use Scenario: Secondary-side synchronous rectifier in 20–100 W USB-C Power Delivery adapters converting 12–20 V input to 5/9/15/20 V outputs. IC Role / Device Role / Timing Role: Low-VF body diode and fast switching MOSFET used in secondary-side synchronous rectification. Use Value: 0.8 V forward voltage and 33 ns reverse recovery cut diode conduction loss by >40% vs. Schottky alternatives, directly improving light-load efficiency compliance. |
| Portable SSD Power Rail Switch | Industrial 24 V DC/DC Step-Down Module |
Use Scenario: Load switch controlling 3.3 V or 5 V power rail to NVMe SSD modules in ultrabooks and tablets, requiring fast enable/disable and current limiting. IC Role / Device Role / Timing Role: Controlled high-side power switch with integrated safe operating area (SOA) for pulsed load currents up to 17 A. Use Value: ±17 A DC rating and 68 A pulse capability support burst-mode SSD read/write loads; 28.9 mJ EAS ensures survivability during hot-plug inrush events. | Use Scenario: Main switching FET in compact 24 V-to-5 V/3.3 V isolated or non-isolated DC/DC modules for industrial HMIs and PLC I/O modules. IC Role / Device Role / Timing Role: High-reliability, thermally robust power switch rated for continuous operation at 70°C ambient with forced air cooling. Use Value: Rth(ch-L) = 30 °C/W allows >1.8 W dissipation on standard 2-layer PCBs; 150°C channel rating supports extended lifetime in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2308DS-T1-GE3 | RDS(on) = 28 mΩ @ 4.5 V (higher), SOT-23 package (smaller, higher Rth), 20 V VDSS. | Limited to <3 A DC; unsuitable for >10 A VRM or power brick primary switches. | Select only for space-constrained, low-current (<3 A), low-voltage (<16 V) load switches-not as a drop-in replacement. |
| IRLML6344TRPBF | RDS(on) = 22 mΩ @ 4.5 V, SOT-23 package, 30 V VDSS, QG = 6.2 nC (lower). | Lower gate charge improves switching efficiency but insufficient current handling (4.3 A DC) for notebook VRMs. | Preferable for low-power DC/DC (≤5 W) or bias supply switching where size and gate drive loss dominate. |
Compared with UPA2708GR-E2-A, Si2308DS-T1-GE3 and IRLML6344TRPBF offer smaller footprints and lower gate drive requirements but lack the 17 A DC current rating, 30 °C/W thermal resistance, and 28.9 mJ avalanche capability needed for high-density notebook and industrial DC/DC power stages.
Availability
UPA2708GR-E2-A is available at Aetrix Electronics and suitable for notebook computer VRMs, USB-C PD power adapters, portable SSD power management, and industrial 24 V DC/DC modules requiring stable component supply across multi-year production cycles.
Supply support for UPA2708GR-E2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.
The UPA2708GR-E2-A belongs to Renesas' µPA series of logic-level power MOSFETs engineered specifically for high-efficiency, space-constrained DC/DC conversion in portable computing and consumer electronics.
FAQ
What is the maximum continuous drain current rating for UPA2708GR-E2-A at 70°C ambient temperature?
The UPA2708GR-E2-A supports ±17 A DC drain current at TA = 25°C with derating per its SOA curve. At 70°C ambient on a 1-inch² glass epoxy board, thermal limits reduce practical continuous current to approximately ±11 A-calculated using Rth(ch-A) = 114 °C/W and Tch ≤ 150°C. Always verify with actual board layout and airflow in UPA2708GR-E2-A designs.
Does UPA2708GR-E2-A have a built-in body diode, and what are its key parameters?
Yes, UPA2708GR-E2-A integrates a fast-recovery body diode rated at VF(S-D) = 0.8 V (at IF = 17 A, VGS = 0 V) and trr = 33 ns (at IF = 17 A, di/dt = 100 A/µs). This diode enables synchronous rectification and freewheeling in buck and flyback topologies. Its low VF and fast trr directly improve efficiency in UPA2708GR-E2-A-based converters.
Can UPA2708GR-E2-A be driven directly by a 3.3 V microcontroller GPIO pin?
No-UPA2708GR-E2-A is not fully enhanced at 3.3 V. Its gate threshold (VGS(off)) ranges from 1.0 to 2.5 V, but RDS(on)2 = 7.5 mΩ max is specified only at VGS = 4.5 V. Driving UPA2708GR-E2-A from 3.3 V risks excessive conduction loss and thermal runaway. Use a dedicated gate driver or level shifter to ensure ≥4.5 V gate drive for reliable UPA2708GR-E2-A operation.
What is the recommended PCB layout practice for thermal management of UPA2708GR-E2-A?
For optimal thermal performance, connect all Drain pins (5–8) to a large, multi-layer copper pour (≥2 oz, ≥10 cm²) with ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground/power planes. Keep Source pins (1–3) and Gate pin (4) traces short and low-inductance. Avoid solder mask over drain copper to maximize heat transfer-this layout enables UPA2708GR-E2-A to sustain >1.5 W continuously.
Is UPA2708GR-E2-A compliant with RoHS and lead-free assembly standards?
Yes-the "-E2-A" suffix explicitly denotes Pb-free construction: no lead in external electrodes or internal terminations. UPA2708GR-E2-A meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for lead-free reflow profiles (peak 260°C). Full RoHS compliance documentation is available upon request for UPA2708GR-E2-A.
UPA2708GR-E2-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2708GR-E2-A FAQ
1.How can I place an order for UPA2708GR-E2-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2708GR-E2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2708GR-E2-A reliable?
The price and inventory of UPA2708GR-E2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2708GR-E2-A is usually 5 days.
3.What payment methods are accepted for UPA2708GR-E2-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2708GR-E2-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2708GR-E2-A?
UPA2708GR-E2-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2708GR-E2-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2708GR-E2-A?
For technical support, including UPA2708GR-E2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2708GR-E2-A requirements.
6.How does Aetrix verify that UPA2708GR-E2-A is sourced from the original manufacturer or authorized distributors?
All UPA2708GR-E2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2708GR-E2-A meets industry standards.
7.What is the process for return or replacement of UPA2708GR-E2-A?
All UPA2708GR-E2-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2708GR-E2-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2708GR-E2-A part is unused and in its original packaging.
Return procedure for UPA2708GR-E2-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPA2708GR-E2-A Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

