Renesas UPA2708TP-E1-AZ

Overview

UPA2708TP-E1-AZ from Renesas Electronics is an N-channel power MOSFET in Power HSOP8 package, designed for DC/DC converter and notebook computer power management. It delivers R_DS(on)1 = 5.5 mΩ max at V_GS = 10 V / I_D = 9.0 A, supports ±40 A DC drain current, and features integrated body diode with V_F(S-D) = 0.8 V at I_F = 17 A.

For engineers reviewing the UPA2708TP-E1-AZ datasheet, UPA2708TP-E1-AZ pinout, UPA2708TP-E1-AZ application, or UPA2708TP-E1-AZ equivalent, key selection criteria include low-voltage gate drive capability (R_DS(on)2 = 7.5 mΩ max at V_GS = 4.5 V), avalanche ruggedness (E_AS = 28.9 mJ), thermal resistance (R_th(ch-C) = 3.68 °C/W), and surface-mount Power HSOP8 packaging optimized for high-density notebook power stages.

Technical Context

This MOSFET operates as a synchronous rectifier or high-side/low-side switch in buck converters, leveraging its low R_DS(on) and fast switching (t_d(on) = 19 ns, t_f = 27 ns) to minimize conduction and switching losses. Its gate threshold voltage range (V_GS(off) = 1.0–2.5 V) ensures reliable turn-on with standard 4.5 V logic-level drivers.

The device integrates a robust body diode (Q_rr = 27 nC, t_rr = 33 ns) and is rated for single-pulse avalanche energy of 28.9 mJ under defined test conditions (V_DD = 15 V, L = 100 µH, R_G = 25 Ω). Thermal design relies on case-mounted heat dissipation, with R_th(ch-C) = 3.68 °C/W enabling high-power operation when heatsinked.

Key Specifications

Pinout & Package

UPA2708TP-E1-AZ uses the Power HSOP8 package: 6.0 mm × 4.4 mm × 1.49 mm body with exposed drain paddle for thermal conduction. The package includes heat spreader structure and Pb-free terminations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR872DP-T1-GE3 and IRLHS6242TRPBF, UPA2708TP-E1-AZ uniquely balances 4.5 V logic-level drive, 40 A DC current, 28.9 mJ avalanche energy, and Power HSOP8 thermal performance - making it optimal for thermally demanding, transient-heavy notebook and industrial DC/DC designs.

Availability

UPA2708TP-E1-AZ is available at Aetrix Electronics and suitable for high-density notebook VRMs, USB-C PD adapters, industrial 24 V buck regulators, and embedded point-of-load modules requiring stable component supply and long-lifecycle support.

Supply support for UPA2708TP-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and mixed-signal solutions for automotive, industrial, and consumer markets.

The UPA2708TP-E1-AZ belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in space- and thermal-constrained portable computing platforms.

FAQ

What is the maximum continuous drain current rating for UPA2708TP-E1-AZ?

The UPA2708TP-E1-AZ is rated for ±40 A DC drain current at T_C = 25°C with proper heatsinking. This rating assumes mounting on a glass-epoxy board per test condition Note 2 and requires thermal design to maintain channel temperature ≤150 °C. At elevated case temperatures, derating applies per the Forward Bias Safe Operating Area curve in the datasheet. UPA2708TP-E1-AZ must not exceed this limit to avoid thermal runaway or permanent damage.

Does UPA2708TP-E1-AZ support 4.5 V gate drive in practical designs?

Yes, UPA2708TP-E1-AZ is explicitly characterized for R_DS(on)2 = 7.5 mΩ max at V_GS = 4.5 V and I_D = 9.0 A, confirming robust enhancement-mode operation with standard logic-level PWM controllers. Its V_GS(off) range (1.0–2.5 V) provides sufficient noise margin. In practice, UPA2708TP-E1-AZ achieves <10 mΩ on-resistance across temperature and production lot when driven with 4.5 V, enabling efficient synchronous rectification without gate boosting.

What is the significance of the 28.9 mJ avalanche energy rating for UPA2708TP-E1-AZ?

The 28.9 mJ single-pulse avalanche energy (E_AS) specifies the maximum inductive stored energy UPA2708TP-E1-AZ can safely absorb without failure under defined test conditions (V_DD = 15 V, L = 100 µH, R_G = 25 Ω, starting T_ch = 25°C). This rating validates ruggedness against voltage spikes during hard-switching transitions or output short circuits. UPA2708TP-E1-AZ leverages this capability in notebook VRMs where layout parasitics induce overshoot exceeding V_DSS.

How does the Power HSOP8 package of UPA2708TP-E1-AZ improve thermal performance compared to standard SO-8?

The Power HSOP8 package of UPA2708TP-E1-AZ incorporates an exposed drain paddle that serves as a primary thermal path, achieving R_th(ch-C) = 3.68 °C/W - over 3× better than typical SO-8 (≈12–15 °C/W). This allows direct attachment to heatsinks or internal PCB copper layers, reducing junction-to-case temperature rise by >40 °C at 20 W dissipation. UPA2708TP-E1-AZ thus sustains higher continuous current in thermally constrained notebook chassis where airflow is limited.

Is UPA2708TP-E1-AZ RoHS-compliant and lead-free?

Yes, UPA2708TP-E1-AZ is Pb-free, as indicated by the "-AZ" suffix in the part number and confirmed in the ordering information section of the datasheet. It complies with the EU RoHS Directive and contains no lead in external electrodes. Renesas Electronics certifies UPA2708TP-E1-AZ for use in environmentally regulated applications including consumer electronics and industrial equipment, provided all applicable substance restrictions are observed in system-level compliance.