Renesas UPA2709GR-E1-A
- Part No.:
- UPA2709GR-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2709GR-E1-A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:9,700
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Product details
Overview
UPA2709GR-E1-A from Renesas Electronics is an N-channel power MOSFET designed for synchronous rectification and high-efficiency DC/DC conversion in notebook computer power management systems, featuring RDS(on)1 = 10.5 mΩ max at VGS = 10 V / ID = 7.0 A, QGD = 3.3 nC typ, and a Power SOP8 surface-mount package.
For engineers reviewing the UPA2709GR-E1-A datasheet, UPA2709GR-E1-A pinout, UPA2709GR-E1-A application, or UPA2709GR-E1-A equivalent, key selection criteria include low-voltage gate drive capability (RDS(on)2 = 15 mΩ max at VGS = 4.5 V), integrated gate protection diode, avalanche energy rating (EAS = 17 mJ), and thermal performance on standard glass-epoxy PCBs.
Technical Context
This device operates as a high-side or low-side switching element in buck converters and point-of-load regulators, with gate threshold voltage VGS(off) = 1.5–2.5 V and forward transfer admittance |yfs| = 7 S at VDS = 10 V / ID = 7.0 A. Its body diode exhibits VF(S-D) = 0.8 V at IF = 13 A and trr = 25 ns under specified test conditions.
The MOSFET supports fast switching with td(on) = 10 ns, tr = 5.3 ns, td(off) = 40 ns, and tf = 7.8 ns at VDD = 15 V / ID = 7.0 A / RG = 10 Ω. Input capacitance Ciss = 1270 pF and reverse transfer capacitance Crss = 110 pF enable predictable gate drive design for high-frequency operation up to ~1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage compatible with 5 V–12 V input rails in notebook DC/DC stages. |
| RDS(on)1 | 10.5 mΩ max at VGS = 10 V / ID = 7.0 A - Enables <1 W conduction loss at 7 A continuous current in compact layouts. |
| RDS(on)2 | 15 mΩ max at VGS = 4.5 V / ID = 7.0 A - Supports logic-level gate drive from 5 V or 3.3 V controllers without level-shifting. |
| QGD | 3.3 nC typ at VDD = 15 V / ID = 13 A - Low gate-drain charge minimizes Miller-induced switching delay and improves efficiency at >300 kHz. |
| EAS | 17 mJ single-pulse avalanche energy - Provides robustness against inductive switching transients in non-synchronous topologies. |
| Tch | 150 °C maximum channel temperature - Allows operation at full rated current with thermal derating on standard 25.4 mm × 25.4 mm × 0.8 mm PCBs. |
| Ciss | 1270 pF - Defines total gate input capacitance for accurate gate driver sizing and rise/fall time prediction. |
Pinout & Package
UPA2709GR-E1-A uses the Power SOP8 (also known as PSOP8 or SOP-8L) package: 6.0 mm × 4.4 mm footprint, 1.27 mm pitch, gull-wing leads, and exposed drain pad for enhanced thermal dissipation. Mounting requires solder reflow per JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal MOSFET cells; connects to ground or low-side return path in buck converters. |
| 4 | Gate | Control terminal requiring ≤±20 V gate-source voltage; driven by PWM controller or gate driver IC. |
| 5, 6, 7, 8 | Drain | High-current output node tied to inductor or input rail; electrically and thermally connected to exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| Built-in gate protection diode | ESD protection between gate and source prevents damage during handling and board assembly (±10 μA IGSS at ±20 V). |
| Low QGD/QG ratio | QGD = 3.3 nC / QG = 11 nC → 30% - Reduces Miller plateau duration and improves hard-switching efficiency. |
| Body diode with fast recovery | trr = 25 ns and Qrr = 22 nC - Minimizes reverse recovery losses in synchronous rectifier applications. |
| Pb-free construction | RoHS-compliant external electrodes and packaging - Meets EU Directive 2011/65/EU without lead content. |
Applications
| Notebook CPU Core Voltage Regulator | USB-C PD Buck Converter |
|---|---|
Use Scenario: Supplies dynamic 0.7–1.5 V core voltage to Intel/AMD mobile processors with load steps up to 50 A/μs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with 4.5 V gate drive from controller. Use Value: RDS(on)2 = 15 mΩ max enables <1.1 W conduction loss at 7 A, reducing thermal load on compact motherboard layers. | Use Scenario: Steps down 20 V USB-C PD input to 5 V/9 V/15 V outputs in portable chargers and docking stations. IC Role / Device Role / Timing Role: High-side main switch in buck topology, driven by integrated controller with 10 V gate bias. Use Value: EAS = 17 mJ ensures reliable operation during output short-circuit events without external snubbers. |
| Industrial 24 V DC/DC Module | Embedded System Point-of-Load Regulator |
Use Scenario: Converts 24 V industrial bus to 3.3 V/5 V for PLC I/O modules and sensor interfaces. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter. Use Value: VF(S-D) = 0.8 V at 13 A reduces body-diode conduction loss during dead-time, improving light-load efficiency. | Use Scenario: Powers FPGA, DSP, or SoC cores in medical handheld devices and test equipment. IC Role / Device Role / Timing Role: Low-voltage, high-current switch in multiphase buck regulator with 3.3 V gate drive. Use Value: Ciss = 1270 pF and Crss = 110 pF allow stable gate drive design with minimal overshoot at 1 MHz switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS-T1-E3 | RDS(on) = 35 mΩ @ 4.5 V, SOT-23 package, lower current rating (ID(DC) = 2.9 A) | Not suitable for >5 A continuous loads; limited thermal mass for sustained 7 A operation. | Select only for space-constrained, low-power auxiliary rails where UPA2709GR-E1-A's 13 A rating is excessive. |
| IRLML6344TRPBF | RDS(on) = 22 mΩ @ 4.5 V, same Power SOP8 footprint but higher RDS(on) and QG = 14.5 nC. | Higher conduction and switching losses reduce efficiency in high-frequency (>500 kHz) notebook applications. | Acceptable for cost-sensitive industrial DC/DC where 10.5 mΩ performance is not required. |
Compared with Si2302DS-T1-E3 and IRLML6344TRPBF, UPA2709GR-E1-A delivers superior RDS(on) and QGD for high-efficiency, high-current notebook power stages, while maintaining compatibility with standard Power SOP8 layout and reflow profiles.
Availability
UPA2709GR-E1-A is available at Aetrix Electronics and suitable for notebook computer power management, USB-C PD converter designs, and industrial 24 V DC/DC modules requiring stable component supply across production lifecycles.
Supply support for UPA2709GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and timing solutions.
The UPA2709GR-E1-A belongs to Renesas' legacy power MOSFET product line targeting high-efficiency, space-constrained DC/DC conversion in portable computing and embedded systems.
FAQ
What is the maximum continuous drain current rating for UPA2709GR-E1-A?
The UPA2709GR-E1-A has a maximum continuous drain current ID(DC) of ±13 A at TA = 25°C when mounted on a standard 25.4 mm × 25.4 mm × 0.8 mm glass-epoxy PCB. Derating applies above 25°C ambient, with full current supported up to Tch = 150°C. This rating makes UPA2709GR-E1-A suitable for high-current synchronous rectifier roles in notebook VRMs and industrial DC/DC converters.
Does UPA2709GR-E1-A support 4.5 V gate drive for logic-level operation?
Yes, UPA2709GR-E1-A is fully characterized for 4.5 V gate drive: RDS(on)2 is guaranteed ≤15 mΩ at VGS = 4.5 V and ID = 7.0 A. This allows direct interfacing with 5 V or 3.3 V PWM controllers without external level shifters, simplifying design in space-constrained notebook power stages where UPA2709GR-E1-A is commonly deployed.
What is the purpose of the built-in gate protection diode in UPA2709GR-E1-A?
The built-in gate-to-source diode in UPA2709GR-E1-A provides electrostatic discharge (ESD) protection during handling and assembly, limiting gate leakage to ±10 μA at ±20 V. However, Renesas explicitly states that external protection remains mandatory if overvoltage transients exceeding absolute maximum ratings may occur in the final circuit-making UPA2709GR-E1-A robust for manufacturing but not self-sufficient for field reliability without supplemental clamping.
Can UPA2709GR-E1-A be used in avalanche-mode operation?
Yes, UPA2709GR-E1-A is rated for single-pulse avalanche with IAS = 13 A and EAS = 17 mJ under defined test conditions (Tch = 25°C, VDD = 15 V, RG = 25 Ω). This capability supports non-synchronous flyback or boost converters where inductive energy must be safely absorbed-though repeated avalanche stress is not recommended, and UPA2709GR-E1-A should be operated within SOA limits for long-term reliability.
What is the thermal resistance characteristic of UPA2709GR-E1-A on standard PCB?
When mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass-epoxy board, UPA2709GR-E1-A exhibits a transient thermal resistance rth(ch-A) = 114°C/W for short pulses, enabling rapid thermal response. Steady-state dissipation is limited to PT1 = 1.1 W under continuous operation, rising to PT2 = 2.5 W for 10-second pulses-critical for burst-mode or intermittent load applications where UPA2709GR-E1-A delivers peak current without thermal shutdown.
UPA2709GR-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2709GR-E1-A FAQ
1.How can I place an order for UPA2709GR-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2709GR-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2709GR-E1-A reliable?
The price and inventory of UPA2709GR-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2709GR-E1-A is usually 5 days.
3.What payment methods are accepted for UPA2709GR-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2709GR-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2709GR-E1-A?
UPA2709GR-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2709GR-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2709GR-E1-A?
For technical support, including UPA2709GR-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2709GR-E1-A requirements.
6.How does Aetrix verify that UPA2709GR-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA2709GR-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2709GR-E1-A meets industry standards.
7.What is the process for return or replacement of UPA2709GR-E1-A?
All UPA2709GR-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2709GR-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2709GR-E1-A part is unused and in its original packaging.
Return procedure for UPA2709GR-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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