Renesas UPA2714GR-E1-A

Overview

UPA2714GR-E1-A from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It delivers R_DS(on) = 20 mΩ max at V_GS = −10 V / I_D = −3.5 A, supports −30 V drain-to-source voltage, and features low input capacitance (C_iss = 1370 pF typ.) in a Power SOP8 surface-mount package.

For engineers reviewing the UPA2714GR-E1-A datasheet, UPA2714GR-E1-A pinout, UPA2714GR-E1-A application, or UPA2714GR-E1-A equivalent, key selection criteria include its −7 A single avalanche current rating, gate threshold compatibility with 4.0–4.5 V logic-level drive, and integrated body diode with 43 ns reverse recovery time for synchronous switching topologies.

Technical Context

This device operates as a high-side load switch in battery protection ICs and system power rails, where its negative gate drive enables direct interface with dedicated protection controllers. Its low R_DS(on) at −4.5 V V_GS (30 mΩ max) ensures minimal conduction loss during overcurrent shutdown and charge/discharge path control.

The MOSFET integrates a robust body diode rated for 7 A forward current and 43 ns trr, supporting bidirectional current handling in battery pack configurations. Avalanche energy rating of 4.9 mJ and channel temperature limit of 150°C support reliable operation under transient fault conditions without external snubbers.

Key Specifications

Pinout & Package

UPA2714GR-E1-A uses the Power SOP8 (also known as PSOP8 or SOP-8L) package: 4.9 mm × 6.0 mm footprint, 1.7 mm height, exposed drain pad on underside for thermal conduction. Pin 1–3 and 5–8 are internally connected to drain; pin 4 is gate; pins 1–3 are source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DDS-T1-E3 and AO3401, UPA2714GR-E1-A offers superior R_DS(on) at logic-level drive, guaranteed avalanche energy, and optimized body diode for battery protection-making it uniquely suited for safety-critical portable power systems.

Availability

UPA2714GR-E1-A is available at Aetrix Electronics and suitable for lithium-ion battery protection circuits, notebook computer power rail switching, and portable medical device power management requiring stable component supply and long-term industrial availability.

Supply support for UPA2714GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and connectivity solutions for automotive, industrial, and consumer markets.

The UPA2714GR-E1-A belongs to Renesas' legacy power MOSFET product line targeting portable electronics power management, with design focus on low-voltage logic compatibility, battery protection reliability, and thermal efficiency in ultra-thin form factors.

FAQ

What is the maximum continuous drain current rating for UPA2714GR-E1-A?

The UPA2714GR-E1-A has a maximum continuous drain current (I_D(DC)) rating of −7 A at T_A = 25°C when mounted on a ceramic substrate. On standard FR-4 PCBs (1 inch × 1 inch × 0.8 mm), derating applies-actual usable current depends on layout, copper area, and ambient temperature. The UPA2714GR-E1-A datasheet specifies 2 W total power dissipation under those conditions, limiting practical DC current to approximately −3.5 A at typical board-level thermal resistance.

Does UPA2714GR-E1-A support logic-level gate drive?

Yes, the UPA2714GR-E1-A is explicitly characterized for logic-level operation: R_DS(on) is guaranteed at V_GS = −4.5 V (30 mΩ max) and −4.0 V (34 mΩ max), making it compatible with 3.3 V and 5 V microcontrollers and battery protection ICs without external level shifting. This feature is confirmed in the "ELECTRICAL CHARACTERISTICS" table of the official Renesas datasheet G15982EJ2V0DS.

What is the purpose of the body diode in UPA2714GR-E1-A and how is it specified?

The integrated body diode in UPA2714GR-E1-A enables bidirectional current flow essential for battery charge/discharge path control. It is characterized with VF(S-D) = 0.82 V at I_F = 7 A and reverse recovery time t_rr = 43 ns at di/dt = 100 A/µs. These parameters ensure low forward loss and minimal switching loss during commutation-critical for efficient operation in protection circuits where the MOSFET may conduct in reverse during fault transitions.

Is UPA2714GR-E1-A rated for avalanche energy, and what are the test conditions?

Yes, the UPA2714GR-E1-A is fully rated for single-pulse avalanche with I_AS = −7 A and E_AS = 4.9 mJ. Test conditions per the datasheet are: starting channel temperature = 25°C, V_DD = −15 V, R_G = 25 Ω, L = 100 µH, and gate drive transition from −20 V to 0 V. This rating validates its ability to safely absorb inductive energy during unclamped switching events common in battery disconnect scenarios.

What package type does UPA2714GR-E1-A use and how is thermal performance achieved?

The UPA2714GR-E1-A uses the Power SOP8 (PSOP8) package-a surface-mount 8-pin variant with an exposed drain pad on the underside. Thermal performance relies on soldering this pad to a large PCB copper area: the datasheet specifies 2 W power dissipation when mounted on a 1200 mm² ceramic substrate (R_th(ch–A) = 62.5°C/W), and 2 W on FR-4 with appropriate layout. The UPA2714GR-E1-A's thermal design enables compact, fanless portable electronics without heatsinks.