Renesas UPA2715GR-E1-AT
- Part No.:
- UPA2715GR-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2715GR-E1-AT.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:8,937
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Product details
Overview
UPA2715GR-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It delivers RDS(on)1 = 4.6 mΩ max at VGS = −10 V / ID = −9.0 A, supports −30 V drain-to-source voltage, and features built-in gate protection diode in Power SOP8 package.
For engineers reviewing the UPA2715GR-E1-AT datasheet, UPA2715GR-E1-AT pinout, UPA2715GR-E1-AT application, or UPA2715GR-E1-AT equivalent, key selection criteria include low RDS(on) at −4.5 V gate drive, avalanche energy rating (EAS = 32.4 mJ), body diode reverse recovery performance (trr = 490 ns), and thermal derating on standard glass-epoxy PCBs.
Technical Context
This MOSFET operates as a high-side load switch in battery protection IC subsystems, where fast turn-off delay (td(off) = 690 ns) and controlled gate charge (QG = 118 nC) enable precise overcurrent and short-circuit response. Its −30 V VDSS rating and −18 A single-pulse avalanche current support robust operation under transient fault conditions.
The device integrates a gate-source protection diode to suppress ESD, but external clamping remains mandatory per datasheet note. Its Ciss = 3500 pF and Crss = 560 pF values define switching loss trade-offs in synchronous buck or OR-ing configurations with gate drivers delivering ≥−10 V swing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V: Maximum blocking voltage in battery disconnect applications without external voltage clamping. |
| RDS(on)1 | 4.6 mΩ max @ VGS = −10 V / ID = −9.0 A: Enables <100 mW conduction loss at 9 A DC load current. |
| RDS(on)2 | 9.0 mΩ max @ VGS = −4.5 V / ID = −9.0 A: Supports logic-level gate drive compatibility with 5 V controllers. |
| EAS | 32.4 mJ: Energy-handling capability during unclamped inductive switching events in protection FET topologies. |
| trr | 490 ns: Reverse recovery time of integrated body diode, critical for minimizing shoot-through in bidirectional battery paths. |
| QG | 118 nC: Total gate charge defining driver strength requirement for ≤1 μs switching transitions. |
| PT2 | 2.5 W @ PW = 10 sec: Continuous power dissipation limit on 25.4 mm² × 0.8 mm glass-epoxy board. |
Pinout & Package
Package: Power SOP8 (surface-mount, 4.4 mm × 5.37 mm footprint, 1.8 mm height, 0.5 mm lead pitch).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; electrically tied to exposed thermal pad (pin 4 not used). |
| 4 | Gate | Control terminal requiring −10 V or −4.5 V drive relative to source for full enhancement. |
| 5, 6, 7, 8 | Drain | High-side connection to battery cathode; all pins paralleled for current sharing and thermal spreading. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4.5 V | 9.0 mΩ max enables direct interface with 5 V microcontrollers in battery cutoff circuits without level-shifting. |
| Built-in gate protection diode | ESD suppression up to ±20 V gate-source rating reduces need for external TVS in space-constrained laptop layouts. |
| High avalanche energy rating | 32.4 mJ single-pulse EAS allows safe interruption of inductive currents during battery short-circuit events. |
| Optimized capacitance profile | Ciss/Crss ratio of ~6.25 improves Miller immunity in high-dV/dt battery line environments. |
| Body diode with fast trr | 490 ns reverse recovery supports efficient OR-ing in dual-battery systems without cross-conduction risk. |
Applications
| Laptop Battery Protection | USB-C Power Delivery Input Switching |
|---|---|
Use Scenario: Isolating Li-ion pack during overvoltage, overtemperature, or cell imbalance faults detected by fuel gauge IC. IC Role / Device Role / Timing Role: High-side power switch controlled by protection ASIC; must respond within 100 μs to fault signals. Use Value: 4.6 mΩ RDS(on) minimizes voltage drop across FET during normal operation, preserving battery runtime. | Use Scenario: Enabling/disabling 20 V input path in USB-C PD sink designs with programmable voltage negotiation. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between connector and PD controller. Use Value: −30 V VDSS accommodates 20 V PD profiles with margin; 32.4 mJ EAS handles inrush transients from hot-plug events. |
| Industrial Portable Equipment Backup Power | Medical Handheld Device Battery Switchover |
Use Scenario: Seamless transition between main battery and backup supercapacitor during brownout conditions. IC Role / Device Role / Timing Role: Bidirectional OR-ing FET managing current flow direction based on voltage differential. Use Value: 490 ns trr and 0.81 V VF(S-D) reduce conduction loss and switching noise during automatic switchover. | Use Scenario: Isolating primary Li-ion cell from system during charging or fault conditions in FDA-classified portable diagnostics tools. IC Role / Device Role / Timing Role: Safety-critical isolation switch commanded by medical-grade battery management firmware. Use Value: Standard-grade qualification per Renesas documentation ensures compliance with non-life-support medical equipment requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 5.2 mΩ @ −10 V; Ciss = 3100 pF; no built-in gate protection diode. | Requires external ESD protection; slightly higher conduction loss but lower input capacitance. | Preferred when gate driver has strong sink capability and board space allows discrete TVS placement. |
| IRF7425PBF | RDS(on) = 6.0 mΩ @ −10 V; EAS = 27 mJ; TO-252 package (larger footprint, better thermal performance). | Lower avalanche robustness; requires PCB area for DPAK mounting and thermal relief. | Chosen when thermal dissipation >2.5 W is needed and surface-mount density is secondary. |
Compared with Si7157DP-T1-GE3 and IRF7425PBF, the UPA2715GR-E1-AT offers superior gate protection integration and higher EAS, making it optimal for compact, high-reliability battery protection where layout area and fault-energy handling are prioritized over minimal RDS(on).
Availability
UPA2715GR-E1-AT is available at Aetrix Electronics and suitable for laptop battery protection, USB-C power delivery input switching, and industrial portable equipment backup power requiring stable component supply and long-term lifecycle support.
Supply support for UPA2715GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and consumer applications.
The UPA2715GR-E1-AT belongs to Renesas' μPA series of small-signal and power MOSFETs engineered specifically for space-constrained, high-efficiency power management in portable computing and battery-powered systems.
FAQ
What is the maximum continuous drain current rating for UPA2715GR-E1-AT at 25°C ambient?
The UPA2715GR-E1-AT has a DC drain current rating of −18 A at TA = 25°C when mounted on a specified glass-epoxy board (25.4 mm² × 0.8 mm). This rating assumes proper thermal management and derates linearly above 25°C per the datasheet's derating curve. Actual usable current depends on PCB copper area, airflow, and gate drive stability - the UPA2715GR-E1-AT must not exceed its channel temperature limit of 150°C.
Does UPA2715GR-E1-AT include an integrated body diode, and what are its key parameters?
Yes, the UPA2715GR-E1-AT includes an intrinsic body diode rated for forward current up to −18 A. Its key parameters are VF(S-D) = 0.81 V typical at IF = 18 A and VGS = 0 V, with reverse recovery time trr = 490 ns and reverse recovery charge Qrr = 2450 nC under specified test conditions. These values are critical for OR-ing and bidirectional battery path designs where diode conduction occurs during switchover.
Can UPA2715GR-E1-AT be driven directly by a 3.3 V microcontroller GPIO?
No - the UPA2715GR-E1-AT is not fully enhanced at 3.3 V gate drive. Its RDS(on)2 specification (9.0 mΩ max) applies only at VGS = −4.5 V, and gate threshold (VGS(off)) ranges from −1.0 V to −2.5 V. A 3.3 V signal cannot achieve reliable low-RDS(on) operation; a dedicated gate driver or level shifter generating ≥−4.5 V relative to source is required for UPA2715GR-E1-AT to function as intended in battery protection circuits.
What is the significance of the "E1-A" suffix in UPA2715GR-E1-AT?
The "E1-A" suffix in UPA2715GR-E1-AT denotes the tape-and-reel packaging variant per Renesas ordering nomenclature: "E1" indicates embossed carrier tape (8 mm width), and "A" specifies Pb-free (RoHS-compliant) finish. The "-AT" suffix further confirms tape-and-reel delivery format. This packaging enables automated SMT placement and aligns with IPC-7351 standards for the Power SOP8 footprint used by the UPA2715GR-E1-AT.
Is UPA2715GR-E1-AT qualified for automotive applications?
No - the UPA2715GR-E1-AT is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics. It is not AEC-Q101 qualified and lacks the extended temperature range, enhanced reliability testing, and failure rate validation required for automotive use. For automotive battery protection, Renesas offers separate "High Quality" grade MOSFETs - the UPA2715GR-E1-AT must not be deployed in transportation equipment without formal requalification.
UPA2715GR-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2715GR-E1-AT FAQ
1.How can I place an order for UPA2715GR-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2715GR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2715GR-E1-AT reliable?
The price and inventory of UPA2715GR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2715GR-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA2715GR-E1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2715GR-E1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2715GR-E1-AT?
UPA2715GR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2715GR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2715GR-E1-AT?
For technical support, including UPA2715GR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2715GR-E1-AT requirements.
6.How does Aetrix verify that UPA2715GR-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA2715GR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2715GR-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA2715GR-E1-AT?
All UPA2715GR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2715GR-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2715GR-E1-AT part is unused and in its original packaging.
Return procedure for UPA2715GR-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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