Renesas UPA2717AGR-E1-AT

Overview

UPA2717AGR-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for high-efficiency power switching in notebook computer power management and Li-ion battery protection circuits. It delivers R_DS(on) = 5.5 mΩ (V_GS = −10 V, I_D = −7.5 A), supports −30 V drain-to-source voltage, and operates with gate-to-source voltage up to ±20 V. Its Power SOP8 package enables compact, surface-mount integration in space-constrained portable systems.

For engineers reviewing the UPA2717AGR-E1-AT datasheet, UPA2717AGR-E1-AT pinout, UPA2717AGR-E1-AT application, or UPA2717AGR-E1-AT equivalent, key selection criteria include low R_DS(on) at −4.5 V gate drive, built-in gate protection diode, avalanche energy rating (E_AS = 22.5 mJ), and thermal performance on ceramic substrates - all critical for battery-side load switching and overcurrent protection design.

Technical Context

This device is a single P-channel enhancement-mode MOSFET with integrated gate protection diode and body diode optimized for synchronous rectification and high-side load switching. Its low input capacitance (C_iss = 3550 pF) and fast turn-on delay (t_d(on) = 17 ns) support high-frequency PWM control in DC-DC converters and battery protection IC interfaces.

The MOSFET features rated avalanche capability (I_AS = −15 A, E_AS = 22.5 mJ) under defined test conditions (V_DD = −15 V, L = 100 μH, R_G = 25 Ω), enabling robust operation during transient overvoltage events in portable power rails without external snubbers.

Key Specifications

Pinout & Package

UPA2717AGR-E1-AT uses the Power SOP8 (Surface Mount Small Outline Package, 8-pin) with exposed drain pad for thermal dissipation. The package measures 6.0 mm × 4.4 mm × 1.8 mm and is lead-free (Pure Sn plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DDS-T1-GE3 and IRLML6344TRPBF, the UPA2717AGR-E1-AT provides superior conduction efficiency at high current, certified avalanche capability for fault tolerance, and integrated gate protection - making it uniquely suited for Li-ion battery protection and high-reliability notebook power switching where thermal margin and transient immunity are design-critical.

Availability

UPA2717AGR-E1-AT is available at Aetrix Electronics and suitable for notebook computer power management, Li-ion battery protection circuits, and USB-C PD source switching requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for UPA2717AGR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The UPA2717AGR-E1-AT belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-efficiency, space-constrained power switching in portable computing and battery-powered systems.

FAQ

What is the maximum continuous drain current rating for UPA2717AGR-E1-AT?

The UPA2717AGR-E1-AT has a maximum continuous drain current (I_D(DC)) of −15 A at T_A = 25°C when mounted on a ceramic substrate (1200 mm² × 2.2 mm). Derating applies above 25°C ambient; at 70°C, usable DC current drops to approximately −9 A based on the published derating curve. This rating ensures robust operation in notebook battery protection FET positions where sustained 7–10 A loads occur.

Does UPA2717AGR-E1-AT include an integrated gate protection diode?

Yes, the UPA2717AGR-E1-AT integrates a gate-to-source protection diode, as confirmed in the "Features" section and Equivalent Circuit diagram of its datasheet (G19279EJ1V0DS). This diode safeguards the gate oxide from ESD events up to human-body-model (HBM) levels, reducing or eliminating the need for external gate clamping components in typical notebook and portable designs.

What is the gate-to-source threshold voltage range for UPA2717AGR-E1-AT?

The gate-to-source cutoff voltage (V_GS(off)) for UPA2717AGR-E1-AT is specified as −1.0 V (min) to −2.5 V (max) at V_DS = −10 V and I_D = −1 mA. This ensures reliable turn-off with standard 3.3 V or 5 V logic signals and provides noise margin against false turn-on in noisy power environments typical of notebook motherboards.

Can UPA2717AGR-E1-AT be used in avalanche mode, and what are the test conditions?

Yes, UPA2717AGR-E1-AT is rated for single-pulse avalanche operation with I_AS = −15 A and E_AS = 22.5 mJ. Per the datasheet, this rating is validated under specific conditions: starting channel temperature of 25°C, V_DD = −15 V, L = 100 μH, R_G = 25 Ω, and gate drive transitioning from −20 V to 0 V. It is intended for transient fault clamping-not repetitive avalanche-so proper thermal design remains essential.

What is the thermal resistance from channel to ambient for UPA2717AGR-E1-AT on a standard PCB?

When mounted on a 1-inch × 1-inch × 0.8-mm glass epoxy board, the UPA2717AGR-E1-AT exhibits a channel-to-ambient thermal resistance (R_th(ch-A)) of approximately 62.5°C/W, derived from its rated 2 W power dissipation and 125°C maximum channel temperature rise above 25°C ambient. This value is critical for calculating junction temperature rise under real-world load conditions in notebook power stages.