Renesas UPA2717GR-E1-AT

Overview

UPA2717GR-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for high-efficiency power switching in notebook computer power management and Li-ion battery protection circuits. It delivers R_DS(on) = 5.5 mΩ (V_GS = −10 V, I_D = −7.5 A), supports −30 V drain-source voltage, and operates with gate-to-source voltage up to −20 V. Its Power SOP8 package enables compact, surface-mount integration in space-constrained portable systems.

For engineers reviewing the UPA2717GR-E1-AT datasheet, UPA2717GR-E1-AT pinout, UPA2717GR-E1-AT application, or UPA2717GR-E1-AT equivalent, key selection criteria include low-voltage gate drive capability (R_DS(on) ≤ 8.9 mΩ at V_GS = −4.5 V), built-in gate ESD protection diode, avalanche energy rating (E_AS = 22.5 mJ), and thermal performance on standard PCBs.

Technical Context

This device is a single P-channel enhancement-mode MOSFET optimized for synchronous rectification and reverse-polarity protection in DC-DC converters and battery safety IC interfaces. Its body diode exhibits V_F(S-D) = 0.82 V (I_F = 15 A) and t_rr = 500 ns, enabling efficient freewheeling without external diodes in many configurations.

The gate charge profile (Q_G = 130 nC, Q_GD = 36 nC) and switching times (t_d(off) = 920 ns, t_f = 510 ns) reflect design trade-offs favoring low conduction loss over ultra-fast switching-suitable for <1 MHz buck converter topologies where efficiency at light-to-moderate loads is prioritized.

Key Specifications

Pinout & Package

UPA2717GR-E1-AT is housed in a Power SOP8 (Surface Mount Small Outline Package, 8-pin) with exposed drain pad for thermal enhancement. The package measures 6.0 mm × 4.4 mm × 1.8 mm and features pure Sn (lead-free) plating.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with Si2301DDS-T1-GE3 and IRF7425PBF, UPA2717GR-E1-AT uniquely balances ultra-low R_DS(on) at logic-level gate drive, certified avalanche energy, and thermal performance in Power SOP8-making it optimal for high-reliability Li-ion protection where both efficiency and fault tolerance are mandatory.

Availability

UPA2717GR-E1-AT is available at Aetrix Electronics and suitable for notebook computer power management, Li-ion battery protection circuits, and USB-C power delivery sink designs requiring stable component supply and long-term manufacturability.

Supply support for UPA2717GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions.

The UPA2717GR-E1-AT belongs to Renesas' legacy Power MOSFET product line, engineered specifically for portable computing and battery safety applications demanding low R_DS(on), robust transient handling, and lead-free compliance.

FAQ

What is the maximum continuous drain current rating for UPA2717GR-E1-AT?

The UPA2717GR-E1-AT has a maximum continuous drain current (I_D(DC)) of −15 A at T_A = 25°C when mounted on a ceramic substrate (1200 mm² × 2.2 mm). On standard 1-inch square FR4 PCBs, this rating drops to approximately −5.5 A due to thermal limitations-designers must verify actual board layout and copper area to ensure safe operation within the 150 °C channel temperature limit.

Does UPA2717GR-E1-AT support gate drive from a 3.3 V microcontroller?

Yes, the UPA2717GR-E1-AT is specified for R_DS(on)2 = 8.9 mΩ maximum at V_GS = −4.5 V and I_D = −7.5 A, confirming reliable enhancement with 5 V logic. While not characterized at exactly −3.3 V, its gate threshold (V_GS(off) = −1.0 to −2.5 V) and transfer characteristics show usable conduction down to −3.5 V-however, full R_DS(on) performance requires ≥−4.5 V, so level-shifting is recommended for 3.3 V-only control.

Is there an integrated body diode in UPA2717GR-E1-AT, and what are its key parameters?

Yes, UPA2717GR-E1-AT includes an intrinsic body diode between source and drain. Its forward voltage is V_F(S-D) = 0.82 V at I_F = 15 A and V_GS = 0 V, with reverse recovery time t_rr = 500 ns and Q_rr = 1320 nC. This diode supports freewheeling in synchronous buck topologies but is not optimized for high-frequency switching-external Schottky diodes may be preferred above 500 kHz.

What is the thermal resistance from channel to ambient for UPA2717GR-E1-AT on a standard PCB?

When mounted on a 1-inch × 1-inch × 0.8 mm glass epoxy board, the UPA2717GR-E1-AT has a channel-to-ambient thermal resistance (R_th(ch-A)2) of approximately 40 °C/W. This value is derived from the derating curve showing 2 W total power dissipation at 25°C ambient, dropping linearly to zero at 125°C ambient-enabling accurate junction temperature estimation using T_ch = T_A + P_D × R_th(ch-A)2.

Can UPA2717GR-E1-AT be used in automotive applications?

No-UPA2717GR-E1-AT is rated as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics. It is not qualified to AEC-Q101 or supported for automotive use. For automotive battery protection or power switching, Renesas offers dedicated AEC-Q101-qualified P-channel MOSFETs such as the RQ3E080AP.