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Renesas UPA2718AGR-E1-AT
- Part No.:
- UPA2718AGR-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.173", 4.40mm Width)
- Datasheet:
-
UPA2718AGR-E1-AT.pdf
- Description:
- MOSFET P-CH 30V 13A 8PSOP
- Quantity:
- Payment:
- Shipping:
Inventory:7,500
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Product details
Overview
UPA2718AGR-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for high-efficiency power switching in notebook computer power management and lithium-ion battery protection circuits. It delivers RDS(on)1 = 9.0 mΩ max at VGS = −10 V, ID = −6.5 A; supports −30 V drain-to-source voltage; and features built-in gate protection diode in Power SOP8 package.
For engineers reviewing the UPA2718AGR-E1-AT datasheet, UPA2718AGR-E1-AT pinout, UPA2718AGR-E1-AT application, or UPA2718AGR-E1-AT equivalent, key selection criteria include low RDS(on) at −4.5 V gate drive, avalanche energy rating (EAS = 16.9 mJ), and thermal performance on ceramic substrate (Rth(ch–A) = 1.25°C/W).
Technical Context
This device operates as a single P-channel enhancement-mode MOSFET with integrated gate protection diode. Its threshold voltage range (VGS(off) = −1.0 to −2.5 V) enables reliable turn-on with standard logic-level gate drivers in high-side switch configurations.
It exhibits pulsed drain current capability up to −130 A and is rated for single-pulse avalanche operation at −13 A with 100 μH inductive load. The body diode has VF(S–D) = 0.84 V at 13 A and trr = 180 ns, supporting synchronous rectification and reverse recovery–sensitive topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - Maximum blocking voltage in high-side switch applications without external clamping |
| RDS(on)1 | 9.0 mΩ max at VGS = −10 V, ID = −6.5 A - Enables <1 W conduction loss at 6.5 A DC load |
| RDS(on)2 | 14.5 mΩ max at VGS = −4.5 V, ID = −6.5 A - Supports direct interface with 4.5 V logic or battery-sourced gate drivers |
| EAS | 16.9 mJ - Specifies single-pulse avalanche energy handling for inductive load switching reliability |
| Ciss | 2810 pF typ. - Determines gate drive power requirement and switching speed under fixed gate resistance |
| QG | 67 nC - Defines minimum gate driver peak current needed for sub-100 ns turn-on/turn-off transitions |
| Tch max | 150°C - Sets maximum junction temperature limit for thermal design margin in compact PCB layouts |
Pinout & Package
UPA2718AGR-E1-AT is housed in Power SOP8 (also known as PSOP8 or SOP-8L), a surface-mount package with exposed drain pad for enhanced thermal dissipation. Dimensions: 6.0 mm × 4.4 mm × 1.8 mm max, lead pitch 1.27 mm, pure Sn plating, Pb-free.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; tied to system ground or battery negative in high-side configuration |
| 4 | Gate | Control terminal requiring −10 V or −4.5 V bias relative to source to fully enhance channel |
| 5, 6, 7, 8 | Drain | Main power output node; electrically and thermally connected to exposed copper pad on underside of package |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4.5 V | 14.5 mΩ max enables use with 4.5 V microcontroller GPIO or battery-powered gate drivers without level shifters |
| Built-in gate protection diode | ESD protection between gate and source eliminates need for external Zener clamp in most portable designs |
| Avalanche-rated operation | Rated for −13 A single-pulse avalanche current ensures robustness against inductive kickback in battery disconnect circuits |
| Optimized body diode | VF(S–D) = 0.84 V and trr = 180 ns support efficient reverse conduction during dead-time in half-bridge configurations |
| Power SOP8 thermal performance | 1.25°C/W junction-to-ambient on ceramic substrate allows >2 W continuous dissipation in space-constrained laptop PCBs |
Applications
| Lithium-Ion Battery Protection | Notebook Computer Power Switching |
|---|---|
|
Use Scenario: Bidirectional overcurrent and short-circuit protection in 2-cell or 3-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET used as main discharge FET, controlled by dedicated protection IC. Use Value: Low RDS(on)2 (14.5 mΩ @ −4.5 V) minimizes voltage drop during discharge while enabling direct control from protection IC's 4.5 V output. |
Use Scenario: System power rail enable/disable for CPU core voltage or peripheral subsystems in ultraportable notebooks. IC Role / Device Role / Timing Role: High-side power switch isolating downstream loads from main battery or adapter input. Use Value: Fast switching (td(on) = 13 ns, td(off) = 510 ns) and low QG (67 nC) reduce transition losses during dynamic power state changes. |
| USB-C Power Delivery Load Switch | Industrial Portable Equipment Power Management |
|
Use Scenario: Input power path selection and fault isolation in USB-C PD sink devices with dual-input capability (adapter + battery). IC Role / Device Role / Timing Role: Reverse-polarity protected high-side switch placed before buck converter input stage. Use Value: −30 V VDSS and EAS = 16.9 mJ provide margin against voltage transients during hot-plug events and cable insertion surges. |
Use Scenario: Power sequencing and backup switchover in handheld test instruments powered by rechargeable Li-ion packs. IC Role / Device Role / Timing Role: Primary power switch controlling main system rail, driven by MCU GPIO with level-shifting not required. Use Value: Gate threshold compatibility with 3.3 V/5 V logic and RDS(on)1 = 9.0 mΩ ensure stable 6.5 A load delivery with <60 mV dropout at full current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; lower power rating (1.3 W) | Suitable only for ≤1 A loads; lacks avalanche rating and thermal performance for battery protection | Select when board space is critical and current <1 A; not suitable as direct replacement for UPA2718AGR-E1-AT in 6.5 A applications. |
| IRF7425PBF | RDS(on) = 22 mΩ @ −4.5 V; SO-8 package; EAS = 12 mJ; higher Ciss (3200 pF) | Compatible pinout but higher gate charge increases driver demand; lower avalanche energy reduces surge margin | Acceptable alternative where 22 mΩ RDS(on) is acceptable and layout accommodates higher switching losses. |
Compared with Si2301DDS-T1-GE3 and IRF7425PBF, UPA2718AGR-E1-AT offers superior combination of low RDS(on) at −4.5 V, high avalanche energy, and thermal capability in Power SOP8-making it uniquely suited for 6.5 A battery protection and notebook power switching where reliability and efficiency are co-prioritized.
Availability
UPA2718AGR-E1-AT is available at Aetrix Electronics and suitable for notebook computer power switching, lithium-ion battery protection circuits, and USB-C power delivery load management requiring stable component supply and long-term industrial availability.
Supply support for UPA2718AGR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.
The UPA2718AGR series belongs to Renesas' legacy power MOSFET product line, engineered specifically for high-reliability, low-voltage power management in portable computing and battery-powered systems.
FAQ
What is the maximum continuous drain current rating for UPA2718AGR-E1-AT?
The UPA2718AGR-E1-AT has a DC drain current rating of −13 A at TA = 25°C when mounted on a ceramic substrate. In practical notebook PCB layouts (glass epoxy), derating applies-typically ≤6.5 A continuous due to thermal constraints. The datasheet specifies RDS(on) test condition at −6.5 A, confirming its intended use case aligns with this current level.
Does UPA2718AGR-E1-AT require an external gate resistor for safe operation?
UPA2718AGR-E1-AT does not mandate an external gate resistor for basic functionality, but a 10 Ω resistor is recommended to control dV/dt and suppress ringing during switching-especially given its 67 nC total gate charge and fast 13 ns turn-on delay. The datasheet switching time test circuit uses RG = 10 Ω, validating this value for stable high-speed operation.
Is UPA2718AGR-E1-AT suitable for automotive applications?
UPA2718AGR-E1-AT is classified as "Standard" quality grade per Renesas documentation and is intended for computers, office equipment, and portable electronics-not automotive systems. It lacks AEC-Q101 qualification, extended temperature screening, or automotive-specific reliability testing. For automotive use, Renesas recommends qualified alternatives like the RQ3E080AJ.
How does the built-in gate protection diode in UPA2718AGR-E1-AT function?
The built-in gate protection diode in UPA2718AGR-E1-AT is a Zener-type ESD protection structure between gate and source terminals, rated for ±20 V. It clamps transient overvoltage to prevent gate oxide breakdown but is not intended as primary surge protection-Renesas explicitly states that external protection remains necessary if voltages exceeding ±20 V may occur in the application.
Can UPA2718AGR-E1-AT be used in parallel with another identical device?
UPA2718AGR-E1-AT can be paralleled, but thermal and gate drive matching must be carefully managed. Its negative temperature coefficient for RDS(on) helps balance current, yet mismatched PCB trace inductance or gate resistance may cause uneven sharing. The datasheet does not specify parallel operation guidelines, so designers should validate current distribution empirically at full load and ambient extremes.
UPA2718AGR-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.173", 4.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2810 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PSOP
UPA2718AGR-E1-AT FAQ
1.How can I place an order for UPA2718AGR-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2718AGR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2718AGR-E1-AT reliable?
The price and inventory of UPA2718AGR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2718AGR-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA2718AGR-E1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2718AGR-E1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2718AGR-E1-AT?
UPA2718AGR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2718AGR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2718AGR-E1-AT?
For technical support, including UPA2718AGR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2718AGR-E1-AT requirements.
6.How does Aetrix verify that UPA2718AGR-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA2718AGR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2718AGR-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA2718AGR-E1-AT?
All UPA2718AGR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2718AGR-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2718AGR-E1-AT part is unused and in its original packaging.
Return procedure for UPA2718AGR-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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