Renesas UPA2718AGR-E2-AT
- Part No.:
- UPA2718AGR-E2-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.173", 4.40mm Width)
- Datasheet:
-
UPA2718AGR-E2-AT.pdf
- Description:
- MOSFET P-CH 30V 13A 8PSOP
- Quantity:
- Payment:

- Shipping:

Inventory:5,000
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Product details
Overview
UPA2718AGR-E2-AT from Renesas Electronics is a P-channel power MOSFET designed for notebook computer power management and Li-ion battery protection circuits. It delivers RDS(on) = 9.0 mΩ max at VGS = −10 V / ID = −6.5 A, supports −30 V drain-source voltage, and features built-in gate protection diode in Power SOP8 package.
For engineers reviewing the UPA2718AGR-E2-AT datasheet, UPA2718AGR-E2-AT pinout, UPA2718AGR-E2-AT application, or UPA2718AGR-E2-AT equivalent, key selection criteria include low RDS(on) at −4.5 V gate drive, avalanche energy rating (EAS = 16.9 mJ), thermal performance on ceramic substrate, and compliance with Pb-free RoHS requirements.
Technical Context
This device operates as a high-side load switch in battery protection IC subsystems, where its negative gate threshold (VGS(off) = −1.0 to −2.5 V) enables direct control by standard logic-level drivers. Its body diode exhibits VF(S-D) = 0.84 V at 13 A and trr = 180 ns, supporting synchronous rectification in bidirectional current paths.
The MOSFET's switching behavior is characterized by td(on) = 13 ns, tr = 18 ns, td(off) = 510 ns, and tf = 310 ns under −15 V VDD, −6.5 A ID, and 10 Ω gate resistance - indicating optimized turn-on speed but relatively slow turn-off suited for fault-containment applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V: Maximum blocking voltage for Li-ion battery stack (≤12S) protection circuits. |
| RDS(on)1 | 9.0 mΩ max at VGS = −10 V / ID = −6.5 A: Enables <100 mW conduction loss at 6.5 A DC load. |
| RDS(on)2 | 14.5 mΩ max at VGS = −4.5 V / ID = −6.5 A: Ensures reliable operation with 5 V logic or battery-sourced gate drivers. |
| Ciss | 2810 pF typ: Limits gate drive current requirement and influences switching transition times. |
| EAS | 16.9 mJ: Supports single-pulse inductive energy absorption during overcurrent shutdown events. |
| Tch max | 150 °C: Specifies maximum junction temperature for continuous operation in thermally constrained notebooks. |
| QG | 67 nC: Determines total gate charge needed for full enhancement; impacts driver sizing and switching losses. |
Pinout & Package
UPA2718AGR-E2-AT uses Power SOP8 (also known as PSOP8 or SOP-8L) package: 6.0 mm × 4.4 mm footprint, 1.27 mm lead pitch, 1.8 mm max height, with exposed drain pad for thermal dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common return path for load current; tied to battery negative or system ground in high-side configuration. |
| 4 | Gate | Control input requiring negative voltage relative to source to turn on; protected by internal Zener diode. |
| 5, 6, 7, 8 | Drain | Main current-carrying terminal connected to battery positive or protected load; electrically tied to exposed thermal pad. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4.5 V | 14.5 mΩ max enables use with 5 V microcontrollers without level-shifting circuitry. |
| Built-in gate protection diode | Zener clamp between gate and source prevents ESD damage during handling and board assembly. |
| Avalanche-rated design | Rated for single-pulse EAS = 16.9 mJ ensures robustness against inductive kickback in battery disconnect events. |
| Pb-free and RoHS-compliant | Pure Sn (tin) lead plating meets EU RoHS Directive and eliminates lead contamination risk in recycling streams. |
| Thermally enhanced package | Exposed drain pad allows direct thermal coupling to PCB copper pour, reducing Rth(ch–A) to 3.5°C/W on ceramic substrate. |
Applications
| Lithium-Ion Battery Protection | Notebook Computer Power Management |
|---|---|
Use Scenario: Integrated into secondary protection IC circuits to isolate defective cells or prevent over-discharge. IC Role / Device Role / Timing Role: High-side main switch controlling battery pack output path; activated only during fault conditions. Use Value: Low RDS(on) minimizes voltage drop across protection FET, preserving usable battery capacity and enabling accurate voltage monitoring. | Use Scenario: Used in CPU/GPU VRM hot-swap or rail sequencing circuits requiring controlled power-up/down timing. IC Role / Device Role / Timing Role: Load switch managing +3.3 V or +5 V auxiliary rails; driven by PMIC GPIO with −4.5 V compatible logic. Use Value: Fast td(on) = 13 ns ensures precise power-rail enable timing, while avalanche rating protects against transient bus faults. |
| USB Power Delivery Switching | Industrial Portable Equipment |
Use Scenario: Bidirectional power path control in USB-C PD sink applications where reverse current must be blocked. IC Role / Device Role / Timing Role: Reverse-blocking switch placed between VBUS and system input; leverages intrinsic body diode directionality. Use Value: VF(S-D) = 0.84 V at 13 A and trr = 180 ns allow efficient forward conduction while limiting reverse recovery losses during mode transitions. | Use Scenario: Power gating for removable modules (e.g., data acquisition cards) in handheld test equipment. IC Role / Device Role / Timing Role: Isolation switch ensuring zero standby current when module is unpowered or disconnected. Use Value: IDSS = −1 μA max at −30 V guarantees <1 μA leakage, extending battery life in always-on portable instruments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; lower ID(DC) = −2.7 A. | Suitable for lower-current (<3 A) space-constrained designs; not rated for avalanche energy. | Select when board area is critical and peak current remains below 3 A; verify thermal margin on FR4. |
| AO3401A | RDS(on) = 52 mΩ @ −4.5 V; SO-8 package; EAS = 12 mJ; QG = 20 nC. | Better gate drive efficiency due to lower QG, but reduced avalanche capability versus UPA2718AGR-E2-AT. | Prefer for high-frequency switching (>100 kHz) where lower QG reduces driver losses, accepting lower fault-energy tolerance. |
Compared with Si2301DDS-T1-GE3 and AO3401A, UPA2718AGR-E2-AT provides superior conduction efficiency at high current (≤6.5 A), higher avalanche robustness (16.9 mJ), and thermal performance on ceramic substrates - making it optimal for notebook battery protection where reliability under fault conditions is prioritized over minimal footprint or ultra-low gate charge.
Availability
UPA2718AGR-E2-AT is available at Aetrix Electronics and suitable for notebook computers, portable medical monitors, and industrial handheld testers requiring stable component supply and long-term lifecycle support.
Supply support for UPA2718AGR-E2-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and mixed-signal ICs for automotive, industrial, and consumer applications.
The UPA2718AGR-E2-AT belongs to Renesas' legacy power MOSFET product line targeting portable electronics power management, with emphasis on low-voltage gate drive compatibility and battery protection reliability.
FAQ
What is the maximum continuous drain current rating for UPA2718AGR-E2-AT?
The UPA2718AGR-E2-AT has a DC drain current rating of −13 A at TA = 25°C when mounted on a ceramic substrate (1200 mm² × 2.2 mm). Derating applies above 25°C ambient; at 75°C, the usable ID(DC) drops to approximately −8.5 A. This rating assumes proper PCB thermal design and accounts for RDS(on) increase with channel temperature.
Does UPA2718AGR-E2-AT support logic-level gate drive?
Yes, UPA2718AGR-E2-AT supports logic-level gate drive with guaranteed RDS(on)2 ≤ 14.5 mΩ at VGS = −4.5 V and ID = −6.5 A. Its gate threshold voltage range (VGS(off) = −1.0 to −2.5 V) ensures full enhancement using standard 5 V microcontroller outputs or dedicated battery-protection IC gate drivers.
Is UPA2718AGR-E2-AT suitable for avalanche-prone applications like battery disconnect?
Yes, UPA2718AGR-E2-AT is explicitly rated for single-pulse avalanche with IAS = −13 A and EAS = 16.9 mJ under defined test conditions (VDD = −15 V, L = 100 μH, RG = 25 Ω). This makes UPA2718AGR-E2-AT appropriate for controlled battery disconnection events where inductive energy must be safely absorbed.
What is the thermal resistance from channel to ambient for UPA2718AGR-E2-AT?
The UPA2718AGR-E2-AT has Rth(ch–A) = 3.5°C/W when mounted on a ceramic substrate (1200 mm² × 2.2 mm), and Rth(ch–A) = 62°C/W on a standard FR4 board (25.4 mm × 25.4 mm × 0.8 mm). These values are derived from transient thermal impedance curves in the datasheet and define safe power dissipation limits under pulsed and DC conditions.
How does the built-in gate protection diode function in UPA2718AGR-E2-AT?
The built-in gate protection diode in UPA2718AGR-E2-AT is a Zener-type clamp between gate and source terminals, rated at ±20 V. It safeguards the gate oxide from ESD and overvoltage transients during handling and PCB assembly. However, external gate resistors and TVS devices are still recommended if the system may experience sustained overvoltage beyond the Zener clamping limit.
UPA2718AGR-E2-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.173", 4.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 67 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2810 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PSOP
UPA2718AGR-E2-AT FAQ
1.How can I place an order for UPA2718AGR-E2-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2718AGR-E2-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2718AGR-E2-AT reliable?
The price and inventory of UPA2718AGR-E2-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2718AGR-E2-AT is usually 5 days.
3.What payment methods are accepted for UPA2718AGR-E2-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2718AGR-E2-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2718AGR-E2-AT?
UPA2718AGR-E2-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2718AGR-E2-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2718AGR-E2-AT?
For technical support, including UPA2718AGR-E2-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2718AGR-E2-AT requirements.
6.How does Aetrix verify that UPA2718AGR-E2-AT is sourced from the original manufacturer or authorized distributors?
All UPA2718AGR-E2-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2718AGR-E2-AT meets industry standards.
7.What is the process for return or replacement of UPA2718AGR-E2-AT?
All UPA2718AGR-E2-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2718AGR-E2-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2718AGR-E2-AT part is unused and in its original packaging.
Return procedure for UPA2718AGR-E2-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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