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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2718GR-E1-AT

Name: UPA2718GR-E1-AT
Brand: Renesas
SKU: UPA2718GR-E1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2718GR-E1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: UPA2718GR-E1-AT.pdf

Description:: P-CHANNEL POWER MOSFET

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Product details

Overview

UPA2718GR-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It features R_DS(on)1 = 9.0 mΩ max at V_GS = −10 V, I_D(DC) = −13 A, V_DSS = −30 V, and Power SOP8 surface-mount packaging. Its built-in gate protection diode supports robust ESD handling in portable power systems.

For engineers reviewing the UPA2718GR-E1-AT datasheet, UPA2718GR-E1-AT pinout, UPA2718GR-E1-AT application, or UPA2718GR-E1-AT equivalent, key selection criteria include low-voltage gate drive compatibility (−4.5 V), avalanche energy rating (E_AS = 16.9 mJ), and thermal performance on ceramic substrates (R_th(ch-A)1 = 1.25 °C/W).

Technical Context

This device operates as a high-side load switch in battery protection IC co-designs, where its negative threshold voltage (V_GS(off) = −1.0 to −2.5 V) enables direct control by standard logic-level gate drivers. Its low C_iss (2810 pF typ.) and fast turn-on delay (t_d(on) = 13 ns) support efficient switching in 1–500 kHz charge/discharge control loops.

The integrated body diode exhibits V_F(S-D) = 0.84 V at I_F = 13 A and t_rr = 180 ns, enabling synchronous rectification in dual-MOSFET protection FET configurations. Avalanche ruggedness (I_AS = −13 A, E_AS = 16.9 mJ) allows safe operation under inductive load transients during overcurrent shutdown.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - Supports full discharge of two-cell Li-ion packs (≤ −8.4 V) with 3.5× safety margin.
R_DS(on)1	9.0 mΩ max at V_GS = −10 V, I_D = −6.5 A - Enables ≤ 390 mW conduction loss at rated DC current.
R_DS(on)2	14.5 mΩ max at V_GS = −4.5 V, I_D = −6.5 A - Ensures functional switching with 3.3 V/5 V logic-level gate drive.
C_iss	2810 pF typ. at V_DS = −10 V - Limits gate drive power requirement to < 1.7 mW at 500 kHz switching.
Q_G	67 nC - Requires ≤ 0.67 µC total charge from gate driver for full enhancement.
E_AS	16.9 mJ - Withstands single-pulse inductive energy up to 100 µH × (13 A)² / 2 without failure.
T_ch max	150 °C - Allows operation in sealed notebook chassis with ambient up to 85 °C using ceramic mounting.

Pinout & Package

UPA2718GR-E1-AT uses the Power SOP8 (also known as PSOP8 or SOP-8L) package: 4.9 mm × 6.0 mm × 1.75 mm body, 1.27 mm lead pitch, gull-wing leads. Thermal pad on underside improves heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for load current; electrically tied to thermal pad for enhanced heatsinking.
4	Gate	Control input requiring negative bias relative to source; protected by internal Zener diode (±20 V rating).
5, 6, 7, 8	Drain	Main power output terminal; connected to battery cathode or system rail; handles full load current and avalanche energy.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed R_DS(on)2 ≤ 14.5 mΩ at V_GS = −4.5 V enables direct interface with 5 V microcontrollers or battery monitor ICs.
Built-in gate protection diode	Integrated Zener between gate and source clamps transient overvoltage to ±20 V, reducing external TVS count in space-constrained designs.
Avalanche-rated operation	Rated single-pulse E_AS = 16.9 mJ ensures reliable shutdown during short-circuit events without derating or snubbers.
Low-output capacitance	C_oss = 710 pF and C_rss = 460 pF minimize Miller effect, supporting stable switching above 200 kHz with minimal gate oscillation.
Thermally optimized package	Power SOP8 footprint delivers R_th(ch-A)1 = 1.25 °C/W on ceramic substrate-3.2× better than standard SO-8 for same board area.

Applications

Battery Protection Circuit	Notebook Computer Power Switch
Use Scenario: Dual-MOSFET configuration in Li-ion pack protection ICs (e.g., S-8261) to block reverse charging and overdischarge. IC Role / Device Role / Timing Role: High-side P-FET controlling battery cathode connection; activated only during fault conditions with < 10 µs response. Use Value: R_DS(on)2 ≤ 14.5 mΩ at −4.5 V ensures < 1.0 V drop at 7 A fault current, preserving protection IC reference accuracy.	Use Scenario: Main system power switch enabling/disabling +5 V or +3.3 V rails during sleep/wake transitions in ultraportable notebooks. IC Role / Device Role / Timing Role: Load switch isolating downstream DC-DC converters; driven by EC (Embedded Controller) GPIO with −5 V swing. Use Value: t_d(on) = 13 ns and Q_G = 67 nC allow full turn-on within 100 ns, minimizing rail collapse during state transitions.
USB-C Power Delivery Sink	Industrial Portable Metering
Use Scenario: Input power switch in USB-C PD sink adapters accepting 5–20 V input, protecting against reverse polarity and overvoltage. IC Role / Device Role / Timing Role: Reverse-polarity protection FET placed before buck controller; conducts only when V_IN polarity is correct. Use Value: Body diode V_F(S-D) = 0.84 V limits forward drop, while avalanche rating absorbs hot-swap inrush transients up to 16.9 mJ.	Use Scenario: Battery disconnect switch in handheld gas analyzers or multimeters requiring >10-year shelf life and zero standby leakage. IC Role / Device Role / Timing Role: Always-off isolation FET; gate held at V_SS until firmware validates battery health. Use Value: I_DSS ≤ −1 µA at −30 V ensures < 1 nA leakage per unit, critical for 10-year backup battery retention.

Battery Protection Circuit

Notebook Computer Power Switch

Use Scenario: Dual-MOSFET configuration in Li-ion pack protection ICs (e.g., S-8261) to block reverse charging and overdischarge.

IC Role / Device Role / Timing Role: High-side P-FET controlling battery cathode connection; activated only during fault conditions with < 10 µs response.

Use Value: R_DS(on)2 ≤ 14.5 mΩ at −4.5 V ensures < 1.0 V drop at 7 A fault current, preserving protection IC reference accuracy.

Use Scenario: Main system power switch enabling/disabling +5 V or +3.3 V rails during sleep/wake transitions in ultraportable notebooks.

IC Role / Device Role / Timing Role: Load switch isolating downstream DC-DC converters; driven by EC (Embedded Controller) GPIO with −5 V swing.

Use Value: t_d(on) = 13 ns and Q_G = 67 nC allow full turn-on within 100 ns, minimizing rail collapse during state transitions.

USB-C Power Delivery Sink

Industrial Portable Metering

Use Scenario: Input power switch in USB-C PD sink adapters accepting 5–20 V input, protecting against reverse polarity and overvoltage.

IC Role / Device Role / Timing Role: Reverse-polarity protection FET placed before buck controller; conducts only when V_IN polarity is correct.

Use Value: Body diode V_F(S-D) = 0.84 V limits forward drop, while avalanche rating absorbs hot-swap inrush transients up to 16.9 mJ.

Use Scenario: Battery disconnect switch in handheld gas analyzers or multimeters requiring >10-year shelf life and zero standby leakage.

IC Role / Device Role / Timing Role: Always-off isolation FET; gate held at V_SS until firmware validates battery health.

Use Value: I_DSS ≤ −1 µA at −30 V ensures < 1 nA leakage per unit, critical for 10-year backup battery retention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DS-T1-E3	R_DS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; no avalanche rating.	Lower current (−2.7 A), suited for sub-1 A protection; unsuitable for 6.5 A continuous loads.	Select only for space-constrained, low-power battery monitors where avalanche immunity is not required.
IRF7425PBF	R_DS(on) = 28 mΩ @ −4.5 V; SO-8 package; E_AS = 22 mJ; higher Q_G = 25 nC.	Higher conduction loss at 6.5 A; slower switching due to larger gate charge; better for lower-frequency (<100 kHz) applications.	Prefer when higher avalanche margin is needed and gate drive strength permits higher Q_G.

Compared with Si2301DS-T1-E3 and IRF7425PBF, UPA2718GR-E1-AT uniquely balances low R_DS(on) at logic-level drive (14.5 mΩ), robust avalanche capability (16.9 mJ), and compact Power SOP8 thermal performance-making it optimal for 6–13 A Li-ion protection where both efficiency and fault resilience are critical.

Availability

UPA2718GR-E1-AT is available at Aetrix Electronics and suitable for notebook computer power switches, Li-ion battery protection circuits, and industrial portable metering systems requiring stable component supply and long-term lifecycle support.

Supply support for UPA2718GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and consumer systems.

The UPA2718GR-E1-AT belongs to Renesas' legacy µPA series of discrete power MOSFETs, engineered specifically for high-reliability, low-voltage power management in portable computing and battery-powered instrumentation.

FAQ

What is the maximum continuous drain current rating for UPA2718GR-E1-AT?

The UPA2718GR-E1-AT has a maximum continuous drain current (I_D(DC)) of −13 A at T_A = 25°C when mounted on a ceramic substrate. Derating applies above 25°C ambient; at 75°C, usable current drops to approximately −8.5 A per the published derating curve. This rating assumes proper PCB copper area and thermal via design per Renesas' recommended layout in the G16952EJ1V0DS datasheet.

Does UPA2718GR-E1-AT support 3.3 V gate drive?

UPA2718GR-E1-AT does not guarantee full enhancement at 3.3 V gate drive. Its R_DS(on)2 is specified at V_GS = −4.5 V (14.5 mΩ max), and R_DS(on)3 rises to 18.2 mΩ max at V_GS = −4.0 V. At −3.3 V, conduction resistance increases significantly beyond datasheet limits, risking excessive heating. For 3.3 V systems, a gate driver or level shifter is required to achieve −4.5 V or lower.

Is the gate protection diode in UPA2718GR-E1-AT sufficient for system-level ESD protection?

The internal gate protection diode in UPA2718GR-E1-AT clamps ESD to ±20 V but is not sufficient for IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact) compliance. Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." System designers must add external TVS diodes or RC filters on the gate line for robust field operation.

What is the thermal resistance from channel to ambient for UPA2718GR-E1-AT on a standard PCB?

When mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm), UPA2718GR-E1-AT has a channel-to-ambient thermal resistance (R_th(ch-A)2) of 62.5 °C/W. This value is derived from its rated P_T2 = 2 W at T_A = 25°C (ΔT = 125°C). Performance improves dramatically on ceramic substrates (R_th(ch-A)1 = 1.25 °C/W), where the same 2 W dissipation yields only 2.5°C rise.

Can UPA2718GR-E1-AT be used in avalanche mode repeatedly?

No-UPA2718GR-E1-AT is rated for single-pulse avalanche only (E_AS = 16.9 mJ, I_AS = −13 A). The datasheet specifies test conditions starting from T_ch = 25°C with strict pulse limits (V_DD = −15 V, L = 100 µH, RG = 25 Ω). Repeated avalanche operation causes cumulative channel degradation and is not characterized or guaranteed. Designers must implement current limiting or fast shutdown to avoid repetitive stress.

UPA2718GR-E1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA2718GR-E1-AT FAQ

1.How can I place an order for UPA2718GR-E1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2718GR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2718GR-E1-AT reliable?

The price and inventory of UPA2718GR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2718GR-E1-AT is usually 5 days.

3.What payment methods are accepted for UPA2718GR-E1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2718GR-E1-AT transactions.

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4.How is shipping managed for UPA2718GR-E1-AT?

UPA2718GR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2718GR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2718GR-E1-AT?

For technical support, including UPA2718GR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2718GR-E1-AT requirements.

6.How does Aetrix verify that UPA2718GR-E1-AT is sourced from the original manufacturer or authorized distributors?

All UPA2718GR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2718GR-E1-AT meets industry standards.

7.What is the process for return or replacement of UPA2718GR-E1-AT?

All UPA2718GR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2718GR-E1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2718GR-E1-AT part is unused and in its original packaging.

Return procedure for UPA2718GR-E1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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