Renesas UPA2718GR-E2-AT
- Part No.:
- UPA2718GR-E2-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2718GR-E2-AT.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
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Inventory:19,780
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Product details
Overview
UPA2718GR-E2-AT from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It delivers RDS(on) = 9.0 mΩ max at VGS = −10 V / ID = −6.5 A, supports −30 V drain-to-source voltage, and features built-in gate protection diode in Power SOP8 package.
For engineers reviewing the UPA2718GR-E2-AT datasheet, UPA2718GR-E2-AT pinout, UPA2718GR-E2-AT application, or UPA2718GR-E2-AT equivalent, key selection criteria include low-voltage gate drive capability (RDS(on) = 14.5 mΩ max at VGS = −4.5 V), avalanche energy rating (EAS = 16.9 mJ), and surface-mount Power SOP8 thermal performance on ceramic substrate.
Technical Context
This device operates as a high-side load switch in battery protection ICs, using depletion-mode-compatible gate threshold (VGS(off) = −1.0 to −2.5 V) to enable direct control by logic-level signals. Its low Ciss (2810 pF typ.) and fast switching (td(on) = 13 ns, tf = 310 ns) support efficient pulsed operation in overcurrent and short-circuit protection circuits.
The integrated body diode provides reverse-polarity protection with VF(S-D) = 0.84 V at IF = 13 A and trr = 180 ns, while single-pulse avalanche capability (IAS = −13 A, EAS = 16.9 mJ) ensures robustness during transient fault events in portable power systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V: Maximum blocking voltage for Li-ion battery stack (up to 3S configuration). |
| RDS(on)1 | 9.0 mΩ max at VGS = −10 V / ID = −6.5 A: Enables <100 mW conduction loss at 6.5 A DC load current. |
| RDS(on)2 | 14.5 mΩ max at VGS = −4.5 V / ID = −6.5 A: Supports direct interface with 4.5 V logic or battery monitor outputs. |
| Ciss | 2810 pF typ. at VDS = −10 V: Limits gate drive power and enables use with low-current protection controllers. |
| EAS | 16.9 mJ: Withstands single inductive energy dump (e.g., motor stall or cable disconnect) without failure. |
| Tch max | 150 °C: Specifies maximum junction temperature for continuous operation in thermally constrained notebooks. |
| QG | 67 nC: Determines minimum gate driver current required for 100 ns switching transitions. |
Pinout & Package
UPA2718GR-E2-AT uses Power SOP8 (also known as PSOP8 or SOP-8L) package: 4.4 mm × 5.37 mm footprint, 1.8 mm height, 1.27 mm lead pitch, with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Main current return path; tied to battery negative or system ground in high-side switch configuration. |
| 4 | Gate | Control input requiring negative voltage relative to source to turn on; protected by internal Zener diode. |
| 5, 6, 7, 8 | Drain | High-current output node connected to battery positive; electrically and thermally linked to exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4.5 V | 14.5 mΩ max enables direct drive from 4.5 V battery monitor ICs without level-shifting circuitry. |
| Built-in gate protection diode | Integrated Zener clamps gate-to-source voltage to ±20 V, reducing external ESD protection component count. |
| Small Power SOP8 package | Surface-mount 8-pin outline with exposed drain pad improves thermal resistance (Rth(ch–A) = 62°C/W on ceramic substrate). |
| Fast body diode recovery | trr = 180 ns and Qrr = 14 nC minimize switching losses and voltage spikes in bidirectional current paths. |
| Avalanche-rated operation | Rated for single-pulse IAS = −13 A and EAS = 16.9 mJ, supporting reliable fault handling in portable equipment. |
Applications
| Battery Protection Circuit | Notebook Computer Power Management |
|---|---|
Use Scenario: Monitors cell voltage and disconnects battery pack during overcharge, over-discharge, or short-circuit events. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by battery protection IC to isolate battery terminals. Use Value: Low RDS(on) minimizes voltage drop across FET during normal operation, preserving battery runtime and accuracy of voltage sensing. | Use Scenario: Controls power delivery to CPU core rails or peripheral subsystems based on system activity state. IC Role / Device Role / Timing Role: Load switch enabling/disabling power domains under PMIC or embedded controller command. Use Value: Fast turn-off (tf = 310 ns) and low gate charge (QG = 67 nC) allow rapid power-state transitions with minimal control overhead. |
| Li-ion Charger Back-Blocking | USB Power Delivery Switching |
Use Scenario: Prevents reverse current flow from battery to charger IC when input power is removed. IC Role / Device Role / Timing Role: Reverse-polarity protection element placed between battery and charging circuit. Use Value: Integrated body diode with VF(S-D) = 0.84 V ensures low-loss forward conduction while blocking reverse leakage (<1 µA IDSS). | Use Scenario: Isolates USB Type-C port power path during hot-plug detection or fault conditions. IC Role / Device Role / Timing Role: Bidirectional power switch managing VBUS routing between source and sink roles. Use Value: Avalanche rating (EAS = 16.9 mJ) withstands inductive transients from cable insertion/removal without latch-up or degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ VGS = −4.5 V; SOT-23 package; lower current rating (−2.7 A DC). | Suitable only for sub-3 A protection loads; lacks avalanche rating and thermal capacity for notebook main battery switches. | Select only for space-constrained, low-power battery packs where 115 mΩ on-resistance is acceptable. |
| AO3401 | RDS(on) = 55 mΩ @ VGS = −4.5 V; SO-8 package; no specified EAS rating. | Acceptable for basic load switching but not recommended for critical battery protection where fault energy must be absorbed. | Prefer for cost-sensitive, non-avalanche-requiring applications; verify thermal margin on PCB with 25.4 mm × 25.4 mm FR4. |
Compared with Si2301DDS-T1-GE3 and AO3401, UPA2718GR-E2-AT offers superior conduction efficiency (9.0 mΩ vs. ≥55 mΩ), certified avalanche ruggedness, and Power SOP8 thermal performance-making it uniquely suited for primary Li-ion battery protection in portable computing.
Availability
UPA2718GR-E2-AT is available at Aetrix Electronics and suitable for notebook computer battery protection, portable device power management, and USB PD fault isolation requiring stable component supply and long-term industrial availability.
Supply support for UPA2718GR-E2-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
The UPA2718GR-E2-AT belongs to Renesas' µPA series of power MOSFETs, engineered specifically for high-efficiency, space-constrained battery protection and power-switching applications in portable electronics.
FAQ
What is the maximum continuous drain current rating for UPA2718GR-E2-AT?
The UPA2718GR-E2-AT has a DC drain current rating of −13 A at TA = 25°C when mounted on a ceramic substrate (1200 mm² × 2.2 mm). Derating applies above 25°C ambient; at 75°C, the usable DC current drops to approximately −7.5 A per the published derating curve in the datasheet.
Does UPA2718GR-E2-AT support gate drive from a 3.3 V microcontroller?
No-UPA2718GR-E2-AT requires negative gate-to-source voltage to conduct; its RDS(on) is not characterized below VGS = −4.5 V. At −3.3 V, conduction is marginal and RDS(on) exceeds 25 mΩ. A dedicated gate driver or level shifter generating at least −4.5 V relative to source is required for reliable operation.
Is the gate protection diode in UPA2718GR-E2-AT sufficient for system-level ESD compliance?
The internal gate protection diode in UPA2718GR-E2-AT clamps VGS to ±20 V and handles typical board-level ESD transients, but it does not meet IEC 61000-4-2 Level 4 (±15 kV air/±8 kV contact). External TVS diodes remain necessary for full system ESD robustness in end-product certification.
Can UPA2718GR-E2-AT be used in parallel configurations for higher current handling?
Yes-UPA2718GR-E2-AT exhibits positive temperature coefficient for RDS(on), enabling stable current sharing when paralleled. However, layout symmetry (matched gate trace inductance, equal source/drain loop area) and individual gate resistors (≥10 Ω) are mandatory to prevent oscillation and ensure balanced dynamic current distribution during switching.
What is the thermal resistance from channel to ambient for UPA2718GR-E2-AT on standard FR4 PCB?
When mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board, UPA2718GR-E2-AT has Rth(ch–A) = 120°C/W (per datasheet Note 3). This value assumes 10-second pulse width and defines safe operating area limits-continuous operation at rated power requires active cooling or larger copper areas beyond the reference board.
UPA2718GR-E2-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2718GR-E2-AT FAQ
1.How can I place an order for UPA2718GR-E2-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2718GR-E2-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that UPA2718GR-E2-AT is sourced from the original manufacturer or authorized distributors?
All UPA2718GR-E2-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2718GR-E2-AT meets industry standards.
7.What is the process for return or replacement of UPA2718GR-E2-AT?
All UPA2718GR-E2-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2718GR-E2-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2718GR-E2-AT part is unused and in its original packaging.
Return procedure for UPA2718GR-E2-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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