Renesas UPA2719GR(1)-E1-AT

Overview

UPA2719GR(1)-E1-AT from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It delivers R_DS(on) = 13 mΩ max at V_GS = −10 V / I_D = −5.0 A, supports −30 V drain-to-source voltage, and features built-in gate protection diode in Power SOP8 package.

For engineers reviewing the UPA2719GR(1)-E1-AT datasheet, UPA2719GR(1)-E1-AT pinout, UPA2719GR(1)-E1-AT application, or UPA2719GR(1)-E1-AT equivalent, key selection criteria include low-voltage gate drive capability (R_DS(on) = 20.9 mΩ max at V_GS = −4.5 V), avalanche energy rating (E_AS = 10 mJ), and surface-mount Power SOP8 thermal performance on ceramic substrate.

Technical Context

This device operates as a high-side load switch in battery protection ICs, leveraging its negative threshold voltage (V_GS(off) = −1.0 to −2.5 V) and fast switching (t_d(off) = 290 ns, t_f = 180 ns). Its body diode enables reverse-current blocking during over-discharge protection.

The integrated gate protection diode mitigates ESD risk but requires external clamping for overvoltage transients. Thermal design must account for R_th(ch-A) = 62.5°C/W (ceramic) and derating above 25°C ambient per published curves.

Key Specifications

Pinout & Package

UPA2719GR(1)-E1-AT uses Power SOP8 (also known as PSOP8 or SOP-8L) package with exposed drain paddle for thermal dissipation. Pin 1–3 and 8 are source terminals; pin 4 is gate; pins 5–8 are drain (including paddle).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Compared with UPA2719GR(1)-E1-AT, Si2301DDS-T1-GE3 offers smaller size but higher conduction loss and lower current capability, while AO3401 matches the package but omits avalanche energy rating-making UPA2719GR(1)-E1-AT uniquely suited for robust Li-ion protection where transient energy absorption is required.

Availability

UPA2719GR(1)-E1-AT is available at Aetrix Electronics and suitable for lithium-ion battery protection, notebook computer power management, and industrial portable equipment requiring stable component supply and long-term lifecycle support.

Supply support for UPA2719GR(1)-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 via merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The UPA2719GR(1)-E1-AT belongs to Renesas' legacy µPA power MOSFET family, engineered specifically for high-reliability, low-R_DS(on) power switching in portable computing and battery safety systems.

FAQ

What is the maximum continuous drain current rating for UPA2719GR(1)-E1-AT?

The UPA2719GR(1)-E1-AT has a maximum continuous drain current (I_D(DC)) of −10 A at T_A = 25°C when mounted on a ceramic substrate. Derating applies above 25°C ambient, dropping to zero at ~125°C per the published derating curve. This rating assumes proper PCB copper area and thermal vias under the exposed drain pad.

Does UPA2719GR(1)-E1-AT support gate drive from a 3.3 V microcontroller?

Yes - the UPA2719GR(1)-E1-AT specifies R_DS(on)2 = 20.9 mΩ max at V_GS = −4.5 V, and its gate threshold (V_GS(off)) ranges from −1.0 V to −2.5 V. A 3.3 V MCU GPIO can drive the gate through an inverting stage or level shifter to achieve sufficient negative bias; direct 3.3 V drive is insufficient since it cannot produce the required negative V_GS.

What is the purpose of the built-in gate protection diode in UPA2719GR(1)-E1-AT?

The built-in gate protection diode in UPA2719GR(1)-E1-AT is a Zener-type clamp between gate and source, rated for ±20 V. It protects the gate oxide from ESD events and transient overvoltage, complying with JEDEC JS-001 Class 2 HBM (2 kV). However, Renesas explicitly states that external protection remains necessary if system-level transients exceed the device's absolute maximum ratings.

Can UPA2719GR(1)-E1-AT be used in avalanche mode repeatedly?

No - the UPA2719GR(1)-E1-AT is rated for single-pulse avalanche only (E_AS = 10 mJ, I_AS = −10 A). The datasheet defines avalanche testing under strictly controlled conditions (T_ch = 25°C, L = 100 µH, V_DD = −15 V). Repetitive avalanche operation is not characterized or guaranteed, and may cause parametric shift or premature failure.

What is the thermal resistance from channel to ambient for UPA2719GR(1)-E1-AT on standard PCB?

When mounted on a glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm), the UPA2719GR(1)-E1-AT has R_th(ch-A) = 125°C/W (Note 3). On a ceramic substrate (1200 mm² × 2.2 mm), it improves to 62.5°C/W. These values are critical for calculating junction temperature rise under load and must be used with actual power dissipation (I² × R_DS(on)) to ensure T_ch ≤ 150°C.