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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2720GR-E1-A

Name: UPA2720GR-E1-A
Brand: Renesas
SKU: UPA2720GR-E1-A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2720GR-E1-A

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.173", 4.40mm Width)

Datasheet:: UPA2720GR-E1-A.pdf

Description:: MOSFET N-CH 30V 14A 8PSOP

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Product details

Overview

UPA2720GR-E1-A from Renesas Electronics is an N-channel power MOSFET designed for Li-ion battery protection circuits and DC-DC power management in notebook computers. It delivers R_DS(on)1 = 6.6 mΩ max at V_GS = 10 V / I_D = 7 A, R_DS(on)2 = 10 mΩ max at V_GS = 4.5 V / I_D = 7 A, and features built-in gate protection diode in Power SOP8 package.

For engineers reviewing the UPA2720GR-E1-A datasheet, UPA2720GR-E1-A pinout, UPA2720GR-E1-A application, or UPA2720GR-E1-A equivalent, key selection criteria include low-voltage gate drive capability (4.5 V logic-level compatibility), dual R_DS(on) specs under distinct V_GS conditions, body diode recovery performance (t_rr = 34 ns), and thermal derating behavior on standard glass-epoxy PCBs.

Technical Context

This MOSFET operates as a synchronous rectifier or high-side/low-side switch in battery protection IC co-designs, where fast switching (t_d(on) = 16 ns, t_f = 26 ns) and low gate charge (Q_G = 27 nC) reduce driver loss. Its body diode exhibits VF(S-D) = 0.8 V at I_F = 14 A and Q_rr = 27 nC, enabling efficient reverse-current handling during dead-time transitions.

The device uses planar trench-gate structure to achieve low C_iss = 2800 pF and Cr_ss = 360 pF at V_DS = 10 V, supporting stable operation in high-frequency DC-DC converters up to ~1 MHz. Channel temperature limit is 150°C, with transient thermal resistance R_th(ch–A) = 114°C/W on 1"×1"×0.8 mm board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum drain-source blocking voltage; suitable for single-cell Li-ion (≤4.2 V) and dual-cell (≤8.4 V) battery systems with margin.
R_DS(on)1	6.6 mΩ max @ V_GS = 10 V, I_D = 7 A - Enables <100 mW conduction loss at 7 A, critical for thermal budget in compact laptop PCBs.
R_DS(on)2	10 mΩ max @ V_GS = 4.5 V, I_D = 7 A - Ensures robust turn-on with standard 5 V logic or battery-monitoring IC outputs.
Q_G	27 nC - Low total gate charge reduces driver power and enables faster switching with modest gate resistor values (e.g., 10 Ω).
t_rr	34 ns - Fast body diode recovery minimizes shoot-through risk and switching loss in synchronous buck topologies.
P_T1	1.1 W - Continuous power dissipation limit on standard FR-4 board; requires thermal relief pads for >1 A sustained current.
C_iss	2800 pF typ. @ V_DS = 10 V - Input capacitance impacts gate drive strength requirements and EMI filtering design.

Pinout & Package

UPA2720GR-E1-A is housed in Power SOP8 (also known as PSOP8 or SOP-8L), a surface-mount package with exposed drain paddle for enhanced thermal conduction. Pin 1–3 are Source, Pin 4 is Gate, and Pins 5–8 are Drain-connected terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node; electrically tied internally; must be routed to low-impedance ground plane for optimal R_DS(on) and thermal performance.
4	Gate	Control terminal; requires ESD-safe layout (short trace, no stubs) due to integrated gate protection diode.
5, 6, 7, 8	Drain	High-current drain node; all pins bonded to internal drain metallization and exposed paddle; used for thermal sinking and high-current return path.

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at V_GS = 4.5 V supports direct interface with battery fuel gauges and protection ICs without level-shifting.
Built-in gate protection diode	ESD-rated diode between gate and source eliminates need for external TVS in most portable designs, reducing BOM count.
Low output charge (Q_GD)	12 nC at I_D = 14 A - minimizes Miller-induced switching delay and improves hard-switching efficiency.
Optimized body diode	VF(S-D) = 0.8 V and t_rr = 34 ns enable use as freewheeling element in high-efficiency synchronous rectifiers.
Thermally enhanced package	Power SOP8 exposes drain metal on underside; thermal resistance from channel to ambient is 114°C/W on standard board - enables >1 W dissipation with minimal copper area.

Applications

Battery Protection Circuit	DC-DC Synchronous Rectifier
Use Scenario: Integrated into multi-cell Li-ion pack protection modules to isolate faulty cells or prevent overcharge/overdischarge during charging cycles. IC Role / Device Role / Timing Role: Acts as primary back-to-back switch pair (high-side + low-side) controlled by protection IC to interrupt charge/discharge paths. Use Value: Low R_DS(on) at 4.5 V ensures reliable cutoff even as battery voltage drops below 3.0 V per cell, extending safe operating window.	Use Scenario: Used as low-side switch in buck converter supplying core voltage to CPU/GPU in ultraportable notebooks. IC Role / Device Role / Timing Role: Functions as synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: 6.6 mΩ R_DS(on) cuts conduction loss by >70% vs. typical 40 V Schottky, directly increasing conversion efficiency by 2–3% at 5–10 A loads.
Load Switch for Peripherals	Hot-Swap Controller Interface
Use Scenario: Controls power delivery to USB peripherals, SSDs, or display interfaces in clamshell laptops where mechanical switches are impractical. IC Role / Device Role / Timing Role: Serves as controlled load switch with soft-start via gate RC network to limit inrush current during hot-plug events. Use Value: Low gate charge (27 nC) allows precise timing control of turn-on slope using small, cost-effective gate resistors and capacitors.	Use Scenario: Interfaces with dedicated hot-swap controllers (e.g., TPS2375x) to manage power sequencing and fault isolation in modular docking stations. IC Role / Device Role / Timing Role: Provides main power FET with fast fault response (t_fall = 26 ns) to support sub-100 ns current-limit shutdown. Use Value: Fast turn-off and low Q_GD ensure clean current interruption during overcurrent events, preventing latch-up in upstream controller.

Battery Protection Circuit

DC-DC Synchronous Rectifier

Use Scenario: Integrated into multi-cell Li-ion pack protection modules to isolate faulty cells or prevent overcharge/overdischarge during charging cycles.

IC Role / Device Role / Timing Role: Acts as primary back-to-back switch pair (high-side + low-side) controlled by protection IC to interrupt charge/discharge paths.

Use Value: Low R_DS(on) at 4.5 V ensures reliable cutoff even as battery voltage drops below 3.0 V per cell, extending safe operating window.

Use Scenario: Used as low-side switch in buck converter supplying core voltage to CPU/GPU in ultraportable notebooks.

IC Role / Device Role / Timing Role: Functions as synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: 6.6 mΩ R_DS(on) cuts conduction loss by >70% vs. typical 40 V Schottky, directly increasing conversion efficiency by 2–3% at 5–10 A loads.

Load Switch for Peripherals

Hot-Swap Controller Interface

Use Scenario: Controls power delivery to USB peripherals, SSDs, or display interfaces in clamshell laptops where mechanical switches are impractical.

IC Role / Device Role / Timing Role: Serves as controlled load switch with soft-start via gate RC network to limit inrush current during hot-plug events.

Use Value: Low gate charge (27 nC) allows precise timing control of turn-on slope using small, cost-effective gate resistors and capacitors.

Use Scenario: Interfaces with dedicated hot-swap controllers (e.g., TPS2375x) to manage power sequencing and fault isolation in modular docking stations.

IC Role / Device Role / Timing Role: Provides main power FET with fast fault response (t_fall = 26 ns) to support sub-100 ns current-limit shutdown.

Use Value: Fast turn-off and low Q_GD ensure clean current interruption during overcurrent events, preventing latch-up in upstream controller.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2300DS-T1-E3	R_DS(on) = 7.5 mΩ @ 4.5 V; smaller SOT-23 package; lower I_D rating (4.5 A DC).	Not suitable for 7 A continuous battery protection; limited to low-power peripheral switching.	Select only when board space is critical and current ≤4 A; verify thermal margin on thin PCBs.
AO3400	R_DS(on) = 28 mΩ @ 4.5 V; SO-8 package; higher Q_G (17 nC); no integrated gate protection diode.	Requires external gate ESD protection; higher conduction loss increases thermal stress in battery path.	Acceptable for cost-sensitive non-critical loads if external TVS is added and peak current <5 A.

Compared with Si2300DS-T1-E3 and AO3400, UPA2720GR-E1-A uniquely combines 7 A DC rating, 4.5 V logic compatibility, integrated gate protection, and Power SOP8 thermal performance - making it the only option qualified for high-reliability Li-ion protection in space-constrained notebooks.

Availability

UPA2720GR-E1-A is available at Aetrix Electronics and suitable for notebook battery protection, synchronous DC-DC rectification, and peripheral load switching requiring stable component supply across long production lifecycles.

Supply support for UPA2720GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.

The UPA2720GR-E1-A belongs to Renesas' µPA series of power MOSFETs engineered specifically for portable computing power management - emphasizing low R_DS(on), logic-level drive, and robust packaging for high-density battery systems.

FAQ

What is the maximum continuous drain current rating for UPA2720GR-E1-A?

The UPA2720GR-E1-A has a maximum continuous drain current (I_D(DC)) of ±14 A at T_A = 25°C when mounted on a 1 inch × 1 inch × 0.8 mm glass epoxy board. Derating applies above 25°C ambient; at 70°C, usable I_D(DC) drops to approximately 9 A based on thermal resistance and power dissipation limits. Always verify actual board layout and copper area in final design.

Does UPA2720GR-E1-A require external gate protection?

UPA2720GR-E1-A includes a built-in gate-to-source protection diode rated for ESD per JESD22-A114 (HBM ≥2 kV). However, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, for systems exposed to surge transients or uncontrolled hot-plug events, external TVS or RC clamping remains necessary despite the internal diode.

Can UPA2720GR-E1-A be used in automotive applications?

No - UPA2720GR-E1-A is classified as a "Standard" quality grade device per Renesas documentation, intended for notebook computers, office equipment, and consumer electronics. It is not qualified for automotive (AEC-Q101), transportation, or safety-critical systems. Automotive-grade alternatives require explicit qualification and different thermal, reliability, and testing validation.

What is the gate threshold voltage range for UPA2720GR-E1-A?

The gate cut-off voltage (V_GS(off)) for UPA2720GR-E1-A is specified as 1.0 V minimum to 2.5 V maximum at V_DS = 10 V and I_D = 1 mA. This range confirms enhancement-mode operation and ensures predictable turn-on behavior with 3.3 V or 5 V logic drivers, while maintaining sufficient noise margin against false triggering.

Is UPA2720GR-E1-A RoHS-compliant?

Yes - the datasheet explicitly notes "Pb-free (This product does not contain Pb in external electrode and other parts)" for the UPA2720GR-E1-A variant. It complies with EU RoHS Directive requirements, and Renesas confirms environmental compliance through material declarations and process controls. Full RoHS documentation is available upon request from Renesas sales offices.

UPA2720GR-E1-A Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-SOIC (0.173", 4.40mm Width)

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 6.6mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2800 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PSOP

UPA2720GR-E1-A FAQ

1.How can I place an order for UPA2720GR-E1-A through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2720GR-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2720GR-E1-A reliable?

The price and inventory of UPA2720GR-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2720GR-E1-A is usually 5 days.

3.What payment methods are accepted for UPA2720GR-E1-A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2720GR-E1-A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2720GR-E1-A?

UPA2720GR-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2720GR-E1-A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2720GR-E1-A?

For technical support, including UPA2720GR-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2720GR-E1-A requirements.

6.How does Aetrix verify that UPA2720GR-E1-A is sourced from the original manufacturer or authorized distributors?

All UPA2720GR-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2720GR-E1-A meets industry standards.

7.What is the process for return or replacement of UPA2720GR-E1-A?

All UPA2720GR-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2720GR-E1-A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2720GR-E1-A part is unused and in its original packaging.

Return procedure for UPA2720GR-E1-A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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