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Renesas UPA2721AGR-E1-AT
- Part No.:
- UPA2721AGR-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2721AGR-E1-AT.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:330,000
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Product details
Overview
UPA2721AGR-E1-AT from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency DC-DC power management in notebook computer mainboards. It delivers 4.3 mΩ RDS(on) at VGS = 10 V and 10 A, supports ±19 A continuous drain current, and features integrated gate protection diode in Power SOP8 package.
For engineers reviewing the UPA2721AGR-E1-AT datasheet, UPA2721AGR-E1-AT pinout, UPA2721AGR-E1-AT application, or UPA2721AGR-E1-AT equivalent, this page provides verified electrical parameters, thermal derating curves, switching timing (td(on) = 33 ns, tf = 32 ns), avalanche energy rating (EAS = 36 mJ), and RoHS-compliant packaging details critical for notebook VRM and battery switch design.
Technical Context
This MOSFET operates as a synchronous rectifier and high-side load switch in notebook CPU/GPU core voltage regulators. Its low RDS(on) minimizes conduction loss at 10–20 A loads, while Ciss = 7100 pF and QG = 52 nC enable fast switching with standard gate drivers.
The device integrates a body diode with VF(S-D) = 0.8 V at 19 A and trr = 41 ns, supporting efficient freewheeling in buck converters. Its absolute maximum VDSS = 30 V and Tch = 150 °C rating align with Intel IMVP-6/7-compatible power stages requiring robust transient handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Supports input rails up to 24 V with 25% margin for transient spikes in notebook adapter-fed systems. |
| RDS(on)1 | 4.3 mΩ max @ VGS = 10 V, ID = 10 A - Enables ≤0.43 W conduction loss per FET at 10 A, critical for thermally constrained mainboard layouts. |
| ID(DC) | ±19 A - Rated continuous current matches typical phase-current requirements of dual-phase CPU VRMs. |
| EAS | 36 mJ - Withstands single-pulse inductive energy from 100 μH chokes during hard-switching faults without failure. |
| Ciss | 7100 pF typ @ VDS = 10 V - Determines gate drive strength requirement; compatible with common 1-A peak gate drivers. |
| td(on)/tf | 33 ns / 32 ns - Enables >1 MHz switching in compact VRMs while maintaining <5% dead-time loss. |
| QG | 52 nC - Total gate charge defines driver power dissipation and influences PWM controller loop stability. |
Pinout & Package
UPA2721AGR-E1-AT uses Power SOP8 (also known as PSOP8 or SOP-8L) package: 4.4 mm × 5.37 mm footprint, 1.8 mm height, 0.65 mm lead pitch, glass epoxy board mountable. Thermal resistance Rth(ch-A) = 114 °C/W on 25.4 mm × 25.4 mm × 0.8 mm board.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal parallel die; connects directly to PCB ground plane for low-inductance return path. |
| 4 | Gate | Control terminal; requires external RC snubber when driven by high-speed controllers to suppress ringing from Lg–Ciss resonance. |
| 5, 6, 7, 8 | Drain | High-current output node; pins 5–8 are internally bonded together to handle ≥19 A with minimal voltage drop across package leads. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 5 V drive | RDS(on)2 = 10 mΩ max enables use with 5 V gate drivers in legacy or cost-optimized VRMs without sacrificing efficiency. |
| Built-in gate protection diode | ESD-rated gate-source diode (±20 V VGSS) reduces need for external TVS in space-constrained notebook designs. |
| High avalanche capability | IAS = 19 A and EAS = 36 mJ allow safe operation under inductive turn-off stress without external clamping circuits. |
| RoHS-compliant pure Sn plating | Pb-free terminations meet JEDEC J-STD-020 reflow profiles and eliminate lead contamination risk in automated SMT lines. |
Applications
| High-Efficiency Notebook CPU VRM | GPU Core Voltage Regulator |
|---|---|
Use Scenario: Dual-phase buck converter supplying 0.8–1.5 V @ 30–60 A to Intel Core i-series CPUs. IC Role / Device Role / Timing Role: High-side synchronous rectifier switching at 500 kHz–1 MHz; handles peak phase current up to 20 A per phase. Use Value: 4.3 mΩ RDS(on) reduces conduction loss by ≥35% versus 6.5 mΩ alternatives, lowering thermal density on 4-layer mainboards. |
Use Scenario: Three-phase VRM delivering 0.9–1.2 V @ 40–80 A to NVIDIA GeForce discrete GPUs. IC Role / Device Role / Timing Role: Low-side switch in interleaved topology; leverages fast tf = 32 ns to minimize shoot-through risk during dead-time transitions. Use Value: 36 mJ EAS withstands repetitive inductive kickback from GPU load transients, eliminating need for external RCD snubbers. |
| Notebook Battery Protection Switch | USB-C PD Power Path Control |
Use Scenario: Bidirectional 20 V/15 A power path between Li-ion battery pack and system bus in ultrabooks. IC Role / Device Role / Timing Role: Load switch controlling battery discharge/charge direction; operated in linear mode during inrush limiting. Use Value: VDSS = 30 V provides 50% headroom above 20 V USB PD 3.0 max, preventing avalanche breakdown during hot-plug events. |
Use Scenario: 20 V/5 A power path switch in USB-C PD sink applications with programmable voltage negotiation. IC Role / Device Role / Timing Role: High-side switch enabling/disabling 20 V rail to system logic; controlled via PMIC GPIO with 100 ns response. Use Value: QG = 52 nC ensures full turn-on within 500 ns using standard 100 mA GPIO, meeting USB PD 3.0 power state transition timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 3.8 mΩ @ 10 V but larger SO-8 package (5.0 × 6.0 mm); no specified EAS rating. | Better conduction loss but higher layout area; unsuitable where avalanche robustness is required per JEDEC JESD22-A109. | Select when board space allows larger footprint and EAS is not mandated by system safety analysis. |
| IRLML6344TRPBF | RDS(on) = 21 mΩ @ 4.5 V; smaller Micro3 package (3.0 × 1.4 mm); Ciss = 490 pF. | Optimized for low-voltage logic-level drive but higher RDS(on); insufficient for >10 A notebook VRM phases. | Prefer for auxiliary 3.3 V/5 V rails or always-on circuits where current < 5 A and gate drive < 5 V. |
Compared with Si7850DP-T1-GE3 and IRLML6344TRPBF, UPA2721AGR-E1-AT uniquely balances ultra-low RDS(on), documented avalanche energy, and Power SOP8 footprint-making it the only option among the three qualified for primary-phase CPU VRM use in space- and reliability-constrained notebooks.
Availability
UPA2721AGR-E1-AT is available at Aetrix Electronics and suitable for notebook computer power management, GPU voltage regulation, and USB-C PD power path control requiring stable component supply across multi-year production cycles.
Supply support for UPA2721AGR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and computing markets.
The UPA2721AGR-E1-AT belongs to Renesas' μPA series of power MOSFETs engineered specifically for high-density, high-efficiency DC-DC conversion in portable computing platforms.
FAQ
What is the maximum continuous drain current rating for UPA2721AGR-E1-AT?
The UPA2721AGR-E1-AT is rated for ±19 A continuous drain current (ID(DC)) at TA = 25°C with proper PCB thermal management. This rating assumes mounting on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. Derating is required above 25°C ambient per the datasheet's thermal curve; at 70°C ambient, usable ID(DC) drops to approximately ±12 A. The UPA2721AGR-E1-AT must not exceed its channel temperature limit of 150°C under any operating condition.
Does UPA2721AGR-E1-AT include integrated ESD protection?
Yes, the UPA2721AGR-E1-AT incorporates a built-in gate-to-source protection diode rated for ±20 V (VGSS), providing inherent ESD robustness per HBM Class 2 (≥2 kV). However, Renesas explicitly states that external protection circuitry remains necessary if voltages exceeding the rated VGSS may occur in-system-such as during hot-swap events or gate driver fault conditions. The UPA2721AGR-E1-AT's internal diode is not a substitute for full-system ESD design compliance.
What is the typical gate charge requirement for UPA2721AGR-E1-AT?
The UPA2721AGR-E1-AT has a total gate charge (QG) of 52 nC typical at VDD = 15 V, with QGS = 20 nC and QGD = 20 nC. This value determines the peak current needed from the gate driver: for a 20 ns rise time, ~2.6 A peak drive is required. The UPA2721AGR-E1-AT's QG is optimized for compatibility with standard 1–2 A peak gate drivers used in notebook VRM ICs like ISL9583x or RT8802.
Can UPA2721AGR-E1-AT be used in avalanche-mode operation?
Yes, the UPA2721AGR-E1-AT is characterized for single-pulse avalanche operation with IAS = 19 A and EAS = 36 mJ under defined test conditions (Tch = 25°C, VDD = 15 V, L = 100 μH, RG = 25 Ω). This rating validates its ability to absorb inductive energy during abnormal switching events. However, Renesas does not guarantee repetitive avalanche capability, and the UPA2721AGR-E1-AT should not be routinely operated in avalanche mode outside of fault-protection scenarios.
What is the thermal resistance from channel to ambient for UPA2721AGR-E1-AT?
The transient thermal resistance (Rth(ch-A)) of the UPA2721AGR-E1-AT is 114 °C/W for a single pulse on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. This value applies to short-duration power bursts; steady-state Rth(ch-A) will be higher due to PCB copper limitations. For reliable long-term operation, the UPA2721AGR-E1-AT's channel temperature must remain ≤150°C-requiring careful thermal design including thermal vias under the drain pads and adequate copper pour area.
UPA2721AGR-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2721AGR-E1-AT FAQ
1.How can I place an order for UPA2721AGR-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2721AGR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2721AGR-E1-AT reliable?
The price and inventory of UPA2721AGR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2721AGR-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA2721AGR-E1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2721AGR-E1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2721AGR-E1-AT?
UPA2721AGR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2721AGR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2721AGR-E1-AT?
For technical support, including UPA2721AGR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2721AGR-E1-AT requirements.
6.How does Aetrix verify that UPA2721AGR-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA2721AGR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2721AGR-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA2721AGR-E1-AT?
All UPA2721AGR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2721AGR-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2721AGR-E1-AT part is unused and in its original packaging.
Return procedure for UPA2721AGR-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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