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Renesas UPA2721GR-E1-AT
- Part No.:
- UPA2721GR-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2721GR-E1-AT.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:342,500
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Product details
Overview
UPA2721GR-E1-AT from Renesas Electronics is an N-channel power MOSFET designed for Li-ion battery protection and high-efficiency power switching in notebook computers. It delivers RDS(on)1 = 4.3 mΩ max at VGS = 10 V / ID = 10 A, RDS(on)2 = 6.3 mΩ max at VGS = 4.5 V / ID = 10 A, and features integrated gate protection diode in Power SOP8 package.
For engineers reviewing the UPA2721GR-E1-AT datasheet, UPA2721GR-E1-AT pinout, UPA2721GR-E1-AT application, or UPA2721GR-E1-AT equivalent, key selection criteria include low-voltage gate drive capability (4.5 V logic-level compatible), dual RDS(on) specs under distinct VGS conditions, body diode reverse recovery time (trr = 48 ns), and thermal resistance (Rth(ch-A) = 114°C/W) on standard FR-4 PCB.
Technical Context
This MOSFET operates as a synchronous rectifier or load switch in battery protection IC circuits, where fast turn-on/turn-off dynamics are critical. Its gate charge profile (QG = 51 nC, QGD = 24 nC) supports efficient PWM control at frequencies up to several hundred kHz, while the built-in gate protection diode mitigates ESD susceptibility during board handling and assembly.
The device's forward transfer admittance |yfs| = 12 S at VDS = 10 V / ID = 10 A confirms strong transconductance for stable current regulation. Its safe operating area (SOA) is defined by RDS(on)-limited conduction at DC and pulse widths ≥10 ms, and power-dissipation-limited operation for pulses <100 µs - validated on 1"×1"×0.8 mm glass epoxy board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage compatible with 3-cell Li-ion battery packs (fully charged ~12.6 V) and 24 V auxiliary rails. |
| RDS(on)1 | 4.3 mΩ max @ VGS = 10 V, ID = 10 A - Enables ≤43 mW conduction loss at 10 A, critical for thermal management in compact laptop PCBs. |
| RDS(on)2 | 6.3 mΩ max @ VGS = 4.5 V, ID = 10 A - Ensures reliable switching with 5 V or 4.5 V logic-level gate drivers without level-shifting circuitry. |
| Ciss | 5100 pF typ @ VDS = 10 V - Low input capacitance reduces gate drive power and improves switching speed in high-frequency DC-DC stages. |
| trr | 48 ns - Fast body diode recovery minimizes shoot-through risk and switching losses in synchronous buck or OR-ing configurations. |
| QGD | 24 nC - Gate-to-drain charge directly impacts Miller plateau duration; enables predictable timing control in hard-switched topologies. |
| Tch max | 150°C - Channel temperature limit defines maximum junction rise above ambient; used with Rth(ch-A) = 114°C/W to calculate safe continuous current derating. |
Pinout & Package
UPA2721GR-E1-AT uses the Power SOP8 surface-mount package (6.0 mm × 4.4 mm × 1.8 mm height), optimized for thermal performance on standard PCBs. The package integrates exposed drain pads on pins 5–8 for enhanced heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal parallel MOSFET cells; connects to battery negative or system ground return path. |
| 4 | Gate | Control terminal requiring <±20 V absolute rating; driven by dedicated protection IC or gate driver with <51 nC total charge demand. |
| 5, 6, 7, 8 | Drain | High-current drain terminals tied internally; must be routed to wide copper areas or thermal pads to sustain ±19 A DC and ±150 A pulsed current. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed RDS(on)2 ≤ 6.3 mΩ at VGS = 4.5 V enables direct interfacing with 5 V microcontrollers or battery protection ASICs without external level shifters. |
| Built-in gate protection diode | ESD-rated diode between gate and source provides Class 2 HBM protection (per datasheet note), reducing need for discrete TVS on gate traces. |
| Low Ciss/Coss ratio | Ciss = 5100 pF / Coss = 1050 pF yields ~4.9:1 ratio - improves voltage gain stability and reduces ringing during hard switching. |
| Fast body diode with low VF(S-D) | VF(S-D) = 0.8 V @ IF = 19 A ensures minimal forward drop during reverse conduction, critical for OR-ing and back-bias protection in dual-battery systems. |
| Pb-free construction | Meets RoHS Directive requirements; external electrodes and all package materials are lead-free per ordering note "-E1-A" variant designation. |
Applications
| Battery Protection Circuit | Notebook Computer Power Management |
|---|---|
Use Scenario: Integrated into multi-cell Li-ion battery packs to enforce overcurrent, short-circuit, and overtemperature shutdown via external protection IC. IC Role / Device Role / Timing Role: Acts as primary high-side or low-side power switch controlled by protection ASIC; responds within microseconds to fault signals. Use Value: Low RDS(on) minimizes voltage drop across sense resistor and extends runtime; fast trr prevents latch-up during transient overloads. | Use Scenario: Used in CPU/GPU VRM high-side switching or system power rail sequencing in ultraportable laptops. IC Role / Device Role / Timing Role: Functions as synchronous rectifier in buck converters or as load switch enabling/disabling subsystems (e.g., USB-C PD negotiation circuitry). Use Value: 4.5 V gate threshold allows direct drive from embedded controller GPIOs; small Power SOP8 footprint saves space on dense motherboard layouts. |
| Power Bank Load Switching | Industrial Portable Equipment |
Use Scenario: Controls output power delivery in multi-port USB PD power banks with independent current limiting per port. IC Role / Device Role / Timing Role: Serves as isolated load switch between battery and USB-C output stage, coordinated with PD controller for dynamic voltage/current negotiation. Use Value: Dual RDS(on) specs ensure consistent performance across varying input voltages (9–20 V); QG = 51 nC enables precise PWM dimming of output current limits. | Use Scenario: Implements battery backup switchover and main power gating in handheld test instruments and portable medical monitors. IC Role / Device Role / Timing Role: Operates as fail-safe isolation switch between primary Li-ion pack and critical subsystems (e.g., display, data logger) during brown-out events. Use Value: 150°C channel rating supports operation in sealed enclosures without forced air; SOA curves validate 10 A continuous current at 60°C ambient on standard PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2300DS-T1-E3 | RDS(on) = 3.5 mΩ @ VGS = 4.5 V but rated only to VDSS = 20 V; smaller SOT-23 package limits thermal capacity. | Suitable for single-cell Li-ion (≤4.2 V) protection only; not rated for 3-cell or 24 V auxiliary rails. | Select when board space is constrained and voltage stress remains <20 V; verify SOA derating for >5 A continuous loads. |
| IRLML6344TRPBF | RDS(on) = 2.8 mΩ @ VGS = 4.5 V, VDSS = 30 V, but Ciss = 720 pF - significantly lower input capacitance than UPA2721GR-E1-AT's 5100 pF. | Better suited for high-frequency (>1 MHz) switching where gate drive power and ringing are dominant concerns. | Prefer for ultra-high-frequency DC-DC converters; avoid where body diode recovery (trr = 48 ns) or SOA robustness under pulsed overload is required. |
Compared with Si2300DS-T1-E3 and IRLML6344TRPBF, UPA2721GR-E1-AT offers superior thermal robustness (2.5 W pulsed power vs. <1 W for SOT-23 parts) and verified SOA performance up to 150 A pulses - making it uniquely suitable for notebook battery protection where both voltage margin and surge withstand are mandatory.
Availability
UPA2721GR-E1-AT is available at Aetrix Electronics and suitable for notebook computer battery protection, portable power bank load switching, and industrial portable equipment requiring stable component supply and long-term lifecycle support.
Supply support for UPA2721GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions.
The UPA2721GR-E1-AT belongs to Renesas' legacy power MOSFET product line targeting portable computing and battery safety applications, engineered for low RDS(on), logic-level drive, and ruggedized packaging in consumer-grade quality grade.
FAQ
What is the maximum continuous drain current for UPA2721GR-E1-AT at 25°C ambient?
The UPA2721GR-E1-AT supports ±19 A DC drain current at TA = 25°C when mounted on a 1 inch × 1 inch × 0.8 mm glass epoxy board. Actual usable current depends on PCB layout, copper area, and ambient temperature - derating begins above 25°C per the datasheet's transient thermal resistance curve (Rth(ch-A) = 114°C/W).
Does UPA2721GR-E1-AT require external gate protection circuitry?
Yes, although UPA2721GR-E1-AT includes a built-in gate-to-source protection diode, Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." This means TVS diodes or RC snubbers remain necessary for robust ESD and dv/dt immunity in end-equipment designs.
Is UPA2721GR-E1-AT compatible with 4.5 V gate drive in battery protection IC applications?
Yes, UPA2721GR-E1-AT is specifically characterized for logic-level operation: RDS(on)2 = 6.3 mΩ max at VGS = 4.5 V and ID = 10 A. This makes it fully compatible with common battery protection ICs (e.g., Ricoh RP400, Seiko S-82 series) that output 4.5 V gate drive signals without level translation.
What is the body diode reverse recovery time (trr) specification for UPA2721GR-E1-AT?
The UPA2721GR-E1-AT has a body diode reverse recovery time trr = 48 ns, measured at IF = 19 A, VGS = 0 V, and di/dt = 100 A/µs. This fast recovery supports efficient synchronous rectification and minimizes cross-conduction losses in bidirectional power paths like battery charging/discharging circuits.
Can UPA2721GR-E1-AT be used in automotive applications?
No - UPA2721GR-E1-AT is classified as a "Standard" quality grade device per Renesas documentation, intended for computers, office equipment, and consumer electronics. It is not qualified for automotive use (which requires "High Quality" grade with AEC-Q101 qualification), and its datasheet does not specify automotive temperature range (−40°C to +125°C) or PPAP support.
UPA2721GR-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2721GR-E1-AT FAQ
1.How can I place an order for UPA2721GR-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2721GR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2721GR-E1-AT reliable?
The price and inventory of UPA2721GR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2721GR-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA2721GR-E1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2721GR-E1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2721GR-E1-AT?
UPA2721GR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2721GR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2721GR-E1-AT?
For technical support, including UPA2721GR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2721GR-E1-AT requirements.
6.How does Aetrix verify that UPA2721GR-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA2721GR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2721GR-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA2721GR-E1-AT?
All UPA2721GR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2721GR-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2721GR-E1-AT part is unused and in its original packaging.
Return procedure for UPA2721GR-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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