Renesas UPA2723T1A-E2-AZ

Overview

UPA2723T1A-E2-AZ from Renesas Electronics (formerly NEC Electronics) is an N-channel power MOSFET designed specifically as a low-side synchronous rectifier switch in DC/DC converters. It features R_DS(on)1 = 2.5 mΩ max at V_GS = 10 V and I_D = 17 A, R_DS(on)2 = 3.5 mΩ max at V_GS = 4.5 V and I_D = 17 A, 30 V V_DSS, and an 8-pin HVSON thin surface-mount package with integrated heat spreader.

For engineers reviewing the UPA2723T1A-E2-AZ datasheet, UPA2723T1A-E2-AZ pinout, UPA2723T1A-E2-AZ application, or UPA2723T1A-E2-AZ equivalent, key selection criteria include low-voltage gate drive capability (4.5 V), high pulsed drain current (±200 A), avalanche energy rating (109 mJ), thermal resistance to case (1.5 °C/W), and RoHS-compliant Sn-Bi lead plating.

Technical Context

The UPA2723T1A-E2-AZ implements a planar trench-gate N-channel structure optimized for high-efficiency synchronous rectification. Its dual R_DS(on) specs (2.5 mΩ @ 10 V, 3.5 mΩ @ 4.5 V) support both standard and logic-level gate drive in compact DC/DC topologies.

It integrates a gate protection diode for ESD robustness and exhibits fast switching performance: t_d(on) = 30 ns, t_r = 40 ns, t_d(off) = 160 ns, t_f = 55 ns, with Q_G = 64 nC and Q_GD = 24 nC at V_DD = 15 V - enabling high-frequency operation while minimizing gate drive loss.

Key Specifications

Pinout & Package

UPA2723T1A-E2-AZ uses an 8-pin HVSON (Heat-Via Small Outline No-lead) package measuring 5.15 mm × 6.0 mm × 1.0 mm max, with exposed drain paddle for thermal enhancement. The package conforms to JEDEC MO-229 and includes Sn-Bi lead finish.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR872DP-T1-GE3 and IPD95R1K2P7ATMA1, the UPA2723T1A-E2-AZ offers optimal balance of ultra-low on-resistance, compact HVSON packaging, and 4.5 V logic-level compatibility - making it uniquely suited for space- and efficiency-critical low-voltage DC/DC synchronous rectifiers.

Availability

UPA2723T1A-E2-AZ is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, telecom power supplies, and automotive ADAS power modules requiring stable component supply and long-term production continuity.

Supply support for UPA2723T1A-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics, Renesas Technology, and Hitachi Semiconductor, specializing in microcontrollers, analog, power, and timing solutions.

The UPA2723T1A-E2-AZ belongs to Renesas' legacy μPA high-efficiency power MOSFET family, engineered specifically for low-voltage, high-current synchronous rectification in point-of-load and intermediate bus converters.

FAQ

What is the maximum continuous drain current rating for the UPA2723T1A-E2-AZ?

The UPA2723T1A-E2-AZ has a maximum continuous drain current (I_D(DC)) rating of ±33 A at T_A = 25°C when mounted on a specified glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25°C ambient, with thermal resistance R_th(ch–A) = 83.3 °C/W under those conditions. For sustained operation, design must ensure channel temperature remains ≤150°C. The UPA2723T1A-E2-AZ supports this via its low R_th(ch–C) = 1.5 °C/W path to the PCB.

Does the UPA2723T1A-E2-AZ support 4.5 V gate drive in practical designs?

Yes - the UPA2723T1A-E2-AZ is explicitly characterized for 4.5 V gate drive, with R_DS(on)2 = 3.5 mΩ max at V_GS = 4.5 V and I_D = 17 A. This enables direct interface with 3.3 V and 5 V logic outputs without external level shifting. Its gate threshold voltage V_GS(off) ranges from 1.0 V to 2.5 V, ensuring reliable turn-on at 4.5 V across temperature and process variation. The UPA2723T1A-E2-AZ thus delivers predictable low-loss operation in modern digitally controlled DC/DC converters.

What is the purpose of the built-in gate protection diode in the UPA2723T1A-E2-AZ?

The built-in gate protection diode in the UPA2723T1A-E2-AZ is a Zener-type ESD protection structure between gate and source, rated per Human Body Model (HBM) ≥2 kV. It clamps transient overvoltage during handling or system-level ESD events, reducing risk of gate oxide damage. However, the datasheet explicitly states that an external protection circuit remains necessary if operational voltages may exceed ±20 V V_GS. The UPA2723T1A-E2-AZ relies on this internal diode only for robustness during assembly and transient surges-not for sustained overvoltage tolerance.

How does the UPA2723T1A-E2-AZ perform under avalanche conditions?

The UPA2723T1A-E2-AZ is fully rated for single-pulse avalanche operation, with I_AS = 33 A and E_AS = 109 mJ (tested at T_ch = 25°C, V_DD = 15 V, R_G = 25 Ω, L = 100 μH). This capability ensures survivability during inductive switching transients - such as those arising from transformer leakage energy or sudden load removal in forward or flyback converters. The UPA2723T1A-E2-AZ's specified avalanche parameters are production-tested, not typical-only values, supporting robust design in unregulated or lightly loaded conditions.

Is the UPA2723T1A-E2-AZ pin-compatible with other HVSON-8 power MOSFETs?

No - the UPA2723T1A-E2-AZ uses a proprietary HVSON-8 pinout (pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain), which differs from industry-standard pinouts like SO-8 or PowerPAK SO-8. While physical dimensions align with JEDEC MO-229, the terminal assignment is unique to this Renesas device. Substitution requires verification of both pin mapping and thermal pad connectivity. The UPA2723T1A-E2-AZ must be laid out using its exact footprint and solder mask definition to ensure electrical integrity and thermal performance.