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Renesas UPA2723UT1A-E1-AY
- Part No.:
- UPA2723UT1A-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
UPA2723UT1A-E1-AY.pdf
- Description:
- MOSFET N-CH 30V 33A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,000
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Product details
Overview
UPA2723UT1A-E1-AY from Renesas Electronics (formerly NEC Electronics) is an N-channel power MOSFET optimized as a low-side synchronous rectifier switch in DC/DC converters. It delivers RDS(on)1 = 2.5 mΩ max at VGS = 10 V / ID = 17 A, supports ±33 A DC drain current, and uses an 8-pin HVSON package with integrated gate protection diode.
For engineers reviewing the UPA2723UT1A-E1-AY datasheet, UPA2723UT1A-E1-AY pinout, UPA2723UT1A-E1-AY application, or UPA2723UT1A-E1-AY equivalent, key selection criteria include low-voltage gate drive capability (RDS(on)2 = 3.5 mΩ max at VGS = 4.5 V), avalanche ruggedness (EAS = 109 mJ), and thermal performance (Rth(ch–C) = 1.5 °C/W).
Technical Context
This MOSFET employs a trench-gate process for enhanced conduction efficiency and reduced gate charge (QG = 64 nC). Its body diode exhibits trr = 55 ns and Qrr = 66 nC under specified conditions, enabling high-frequency switching in synchronous buck topologies.
The device operates within a channel temperature range of −55°C to +150°C and features built-in gate-source ESD protection. Its 8-pin HVSON package integrates a heat spreader and exposes the drain pad on the bottom surface for direct thermal coupling to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in low-voltage DC/DC output stages |
| RDS(on)1 | 2.5 mΩ max @ VGS = 10 V, ID = 17 A - Enables <1.5 W conduction loss at full rated current |
| RDS(on)2 | 3.5 mΩ max @ VGS = 4.5 V, ID = 17 A - Supports efficient operation with 5 V or logic-level gate drivers |
| ID(DC) | ±33 A - Sustains continuous output current in compact 12 V–24 V converter designs |
| EAS | 109 mJ - Withstands single-pulse inductive energy during transient overloads without failure |
| Rth(ch–C) | 1.5 °C/W - Enables direct thermal path from channel to PCB copper, critical for high-power density layouts |
| QG | 64 nC - Determines gate driver power requirement and switching speed trade-off in 300–1000 kHz converters |
Pinout & Package
UPA2723UT1A-E1-AY is housed in an 8-pin HVSON (Heat-Via Small Outline No-lead) package measuring 5.0 mm × 6.0 mm × 1.0 mm max, with exposed drain pad on underside for thermal management.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET cells; tied to PCB ground plane for low-inductance return path |
| 4 | Gate | Control terminal requiring ≤±20 V drive; includes integrated gate-source protection diode |
| 5, 6, 7, 8 | Drain | High-current output node; electrically and thermally connected to exposed bottom pad |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 3.5 mΩ max enables use with 5 V microcontroller GPIO or dedicated low-VGS drivers |
| Integrated gate protection diode | ESD-rated structure reduces need for external gate clamping in space-constrained DC/DC modules |
| Thin HVSON package | 1.0 mm max height supports ultra-low-profile power stages in telecom and server VRMs |
| Avalanche-rated | Rated for single-pulse EAS = 109 mJ ensures robustness against inductive switching transients |
| Pb-free & RoHS compliant | Pure Sn lead plating (E1-AY suffix) meets environmental compliance for industrial and computing applications |
Applications
| Server VRM Output Stage | Telecom DC/DC Module |
|---|---|
Use Scenario: High-current, high-efficiency 12 V input → 1.0–3.3 V output conversion in dual-phase buck regulators. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500–800 kHz with forced PWM control. Use Value: 2.5 mΩ RDS(on) minimizes conduction loss at >30 A load currents, improving full-load efficiency by ≥1.2% vs. higher-RDS(on) alternatives. |
Use Scenario: Compact 48 V to 12 V intermediate bus converter in blade servers and optical line cards. IC Role / Device Role / Timing Role: Secondary-side switch in isolated forward or active-clamp forward topology. Use Value: 3.5 mΩ RDS(on) at 4.5 V gate drive allows direct interface with standard 5 V gate drivers, eliminating level-shifting circuitry. |
| Industrial PLC Power Supply | Automotive ADAS Camera Module |
Use Scenario: 24 V input → 5 V/3.3 V auxiliary rail generation in programmable logic controllers with wide ambient temperature range. IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck regulator powering FPGA and I/O interfaces. Use Value: −55°C to +150°C channel rating and 109 mJ avalanche energy ensure reliable operation under industrial thermal cycling and load dump conditions. |
Use Scenario: 12 V input → 3.3 V core supply for image signal processors in rear-view and surround-view camera ECUs. IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in compact 2-layer PCB layout with strict height constraints. Use Value: 1.0 mm max profile and HVSON thermal pad enable thermal performance matching larger SO-8 devices in <5 mm height enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.3 mΩ @ 10 V but requires larger 5×6 mm PQFN; no integrated gate protection diode | Better conduction loss but needs external gate clamp; less suitable for space-constrained synchronous rectifiers | Prefer when board area allows larger footprint and gate driver includes robust clamping |
| IRF7759L2TRPBF | RDS(on) = 3.0 mΩ @ 10 V; 8-pin SO-8 package with higher Rth(ch–A) = 50 °C/W | Lower thermal performance limits continuous current in sealed enclosures; not optimized for 4.5 V drive | Select only if legacy SO-8 compatibility is mandatory and peak power dissipation remains <1.2 W |
Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the UPA2723UT1A-E1-AY uniquely combines 4.5 V drive capability, integrated gate protection, and HVSON thermal efficiency-making it optimal for compact, high-reliability synchronous rectifier designs where gate drive simplicity and thermal headroom are prioritized over absolute lowest RDS(on).
Availability
UPA2723UT1A-E1-AY is available at Aetrix Electronics and suitable for server VRMs, telecom DC/DC modules, and industrial PLC power supplies requiring stable component supply and long-lifecycle support.
Supply support for UPA2723UT1A-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA2723UT1A-E1-AY belongs to Renesas' legacy μPA high-efficiency power MOSFET family, engineered specifically for low-voltage, high-current synchronous rectification in next-generation DC/DC converters.
FAQ
What is the maximum continuous drain current rating for the UPA2723UT1A-E1-AY?
The UPA2723UT1A-E1-AY is rated for ±33 A DC drain current at TA = 25°C when mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. Derating applies above 25°C ambient; at 70°C, the usable DC current drops to approximately ±22 A based on thermal resistance and power dissipation limits.
Does the UPA2723UT1A-E1-AY support 4.5 V gate drive in production systems?
Yes - the UPA2723UT1A-E1-AY guarantees RDS(on)2 ≤ 3.5 mΩ at VGS = 4.5 V and ID = 17 A, making it fully compatible with 5 V logic-level gate drivers and microcontroller GPIO outputs without level shifting. This is confirmed in the Electrical Characteristics table of the official datasheet G18626EJ2V0DS.
Is the UPA2723UT1A-E1-AY pin-compatible with other 8-pin HVSON MOSFETs?
No - while the UPA2723UT1A-E1-AY uses an 8-pin HVSON package, its pin assignment (pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain) is specific to this device family. Substituting with other HVSON MOSFETs requires verification of both pinout and thermal pad connectivity, as layout mismatch may cause short circuits or thermal failure.
What is the purpose of the built-in gate protection diode in the UPA2723UT1A-E1-AY?
The built-in gate-source diode in the UPA2723UT1A-E1-AY provides ESD protection per human-body model (HBM), helping prevent gate oxide damage during handling and assembly. However, the datasheet explicitly states that an external protection circuit remains necessary if voltage transients exceeding ±20 V may occur in system operation - the internal diode alone is insufficient for field reliability.
Can the UPA2723UT1A-E1-AY be used in avalanche mode during normal operation?
No - the UPA2723UT1A-E1-AY is rated for single-pulse avalanche energy (EAS = 109 mJ) as a ruggedness specification, not for repetitive avalanche operation. Continuous avalanche stress will degrade the device. Designers must ensure snubbers, clamp circuits, or topology choices prevent unintended avalanche conduction during switching transitions.
UPA2723UT1A-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 64 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 8100 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN3333 (3.3x3.3)
UPA2723UT1A-E1-AY FAQ
1.How can I place an order for UPA2723UT1A-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2723UT1A-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2723UT1A-E1-AY reliable?
The price and inventory of UPA2723UT1A-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2723UT1A-E1-AY is usually 5 days.
3.What payment methods are accepted for UPA2723UT1A-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2723UT1A-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2723UT1A-E1-AY?
UPA2723UT1A-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2723UT1A-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2723UT1A-E1-AY?
For technical support, including UPA2723UT1A-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2723UT1A-E1-AY requirements.
6.How does Aetrix verify that UPA2723UT1A-E1-AY is sourced from the original manufacturer or authorized distributors?
All UPA2723UT1A-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2723UT1A-E1-AY meets industry standards.
7.What is the process for return or replacement of UPA2723UT1A-E1-AY?
All UPA2723UT1A-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2723UT1A-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2723UT1A-E1-AY part is unused and in its original packaging.
Return procedure for UPA2723UT1A-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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