Renesas UPA2726UT1A-E2-AY
- Part No.:
- UPA2726UT1A-E2-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2726UT1A-E2-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:3,000
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Product details
Overview
UPA2726UT1A-E2-AY from Renesas Electronics is an N-channel power MOSFET in an 8-pin HVSON package, rated for 30 V VDSS, 20 A DC drain current, and 7.0 mΩ RDS(on) at VGS = 10 V. It features low input capacitance (1720 pF), fast switching (td(on) = 14 ns), and is optimized for synchronous rectification in DC/DC converters.
For engineers reviewing the UPA2726UT1A-E2-AY datasheet, UPA2726UT1A-E2-AY pinout, UPA2726UT1A-E2-AY application, or UPA2726UT1A-E2-AY equivalent, this device is selected for high-efficiency, space-constrained power stages where thermal performance (Rth(ch-C) = 1.5 °C/W), avalanche ruggedness (EAS = 40 mJ), and gate drive compatibility with 4.5 V logic are critical.
Technical Context
This MOSFET employs a trench-gate process to achieve low RDS(on) while maintaining robust safe operating area (SOA) and avalanche capability. Its thin HVSON package integrates a heat spreader directly to the drain terminals, enabling efficient thermal conduction to the PCB.
The device exhibits dual RDS(on) specs-7.0 mΩ at 10 V and 11.0 mΩ at 4.5 V-supporting both standard and logic-level gate drive. Body diode parameters (VF(S-D) = 0.82 V, trr = 30 ns, Qrr = 23 nC) are characterized for synchronous buck operation with minimal reverse recovery loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in high-side or low-side switch position without breakdown |
| RDS(on)1 | 7.0 mΩ max at VGS = 10 V, ID = 10 A - Enables <1 W conduction loss at 10 A in compact layouts |
| RDS(on)2 | 11.0 mΩ max at VGS = 4.5 V, ID = 10 A - Supports direct interfacing with 3.3 V/5 V microcontroller GPIOs |
| Ciss | 1720 pF typ at VDS = 15 V - Low gate charge demand reduces driver stress and EMI in high-frequency converters |
| td(on)/tf | 14 ns / 9.8 ns - Fast turn-on and fall times allow >1 MHz switching with minimized dead-time losses |
| EAS | 40 mJ - Withstands single-pulse inductive energy during load dump or short-circuit events |
| Rth(ch-C) | 1.5 °C/W - Direct thermal path from channel to exposed drain pad enables high-power density without heatsinks |
Pinout & Package
UPA2726UT1A-E2-AY uses an 8-pin HVSON package (5.15 mm × 6.0 mm × 1.0 mm max) with exposed drain paddle for thermal management. Pins 1–3 and 5–8 are electrically connected internally as source and drain terminals respectively; pin 4 is gate-only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node tied to PCB ground plane; low-inductance connection critical for switching noise control |
| 4 | Gate | High-impedance control terminal requiring <5.0 nC total gate charge for full enhancement |
| 5, 6, 7, 8 | Drain | Power output node and thermal interface; all four pins bonded to internal drain metallization and exposed paddle |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 11.0 mΩ max enables use with 3.3 V logic drivers without level-shifting circuitry |
| Thin HVSON thermal design | 1.5 °C/W channel-to-case resistance allows >4 W continuous dissipation on 25.4 mm² copper area |
| Fast body diode | 30 ns reverse recovery time and 23 nC Qrr reduce shoot-through risk in synchronous rectification |
| Avalanche-rated | 20 A single-pulse avalanche current and 40 mJ energy rating support robust overcurrent protection |
| Pb-free & RoHS compliant | Pure Sn lead plating (E2-AY suffix) meets EU RoHS Directive 2011/65/EU without exemptions |
Applications
| Point-of-Load DC/DC Converter | USB-C Power Delivery Module |
|---|---|
Use Scenario: High-density 12 V to 3.3 V/5 V conversion in server VRMs or telecom power modules. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in buck converter output stage, replacing Schottky diodes to improve efficiency above 90%. Use Value: 7.0 mΩ RDS(on) cuts conduction loss by >40% vs. typical 20 mΩ alternatives, directly increasing power density. | Use Scenario: 20 V input to 5–20 V programmable output in portable USB-C PD adapters. IC Role / Device Role / Timing Role: Low-side switch in active clamp or synchronous rectifier topology handling up to 5 A continuous output. Use Value: 4.5 V logic-level drive eliminates need for gate driver ICs, reducing BOM count and layout area. |
| Industrial Motor Drive Half-Bridge | LED Driver Constant-Current Stage |
Use Scenario: 24 V BLDC motor gate driver output stage in factory automation controllers. IC Role / Device Role / Timing Role: Low-side switching element in half-bridge configuration, commutated at 20–50 kHz. Use Value: 120 A pulse rating and 40 mJ avalanche energy tolerate back-EMF transients during rapid deceleration. | Use Scenario: High-current constant-current sink for multi-string LED arrays in architectural lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator in linear+switching hybrid LED driver architecture. Use Value: 20 A DC rating and 1.5 °C/W thermal resistance enable stable 15 A operation without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 5.2 mΩ @ 10 V, larger 5×6 mm PQFN package, higher Ciss (2200 pF) | Better conduction loss but slower switching; suited for <500 kHz designs prioritizing efficiency over size | Select when lower RDS(on) outweighs board area and EMI constraints |
| IRF7759L2TRPBF | RDS(on) = 9.0 mΩ @ 4.5 V, SO-8 package, no exposed thermal pad, Rth(j-a) = 62 °C/W | Limited thermal performance; requires larger copper area or heatsink for >5 A continuous use | Choose only if legacy SO-8 footprint must be retained and power levels stay below 3 W |
Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the UPA2726UT1A-E2-AY delivers optimal balance of low 4.5 V RDS(on), ultra-low thermal resistance, and compact HVSON packaging-making it preferred for space- and thermally constrained DC/DC converters where gate drive simplicity and avalanche margin are essential.
Availability
UPA2726UT1A-E2-AY is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, USB-C power delivery modules, and industrial motor drive half-bridges requiring stable component supply and long-term lifecycle assurance.
Supply support for UPA2726UT1A-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The UPA2726UT1A-E2-AY belongs to Renesas' μPA series of power MOSFETs engineered specifically for high-efficiency, high-frequency DC/DC conversion in consumer and industrial power supplies.
FAQ
What is the maximum continuous drain current rating for UPA2726UT1A-E2-AY at 25°C ambient?
The UPA2726UT1A-E2-AY is rated for ±20 A DC drain current (ID(DC)) at TA = 25°C when mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. Derating applies above 25°C per the datasheet's derating curve; actual usable current depends on PCB copper area and airflow. The UPA2726UT1A-E2-AY achieves this rating via its 1.5 °C/W channel-to-case thermal resistance and exposed drain paddle.
Does UPA2726UT1A-E2-AY support logic-level gate drive?
Yes, the UPA2726UT1A-E2-AY supports logic-level gate drive with RDS(on)2 = 11.0 mΩ max at VGS = 4.5 V and ID = 10 A. Its gate threshold voltage (VGS(off)) ranges from 1.5 V to 2.5 V, ensuring reliable enhancement with standard 3.3 V or 5 V microcontroller outputs. This eliminates external level shifters in many UPA2726UT1A-E2-AY implementations.
What is the avalanche energy rating of UPA2726UT1A-E2-AY and how is it tested?
The UPA2726UT1A-E2-AY is rated for 40 mJ single-pulse avalanche energy (EAS) under conditions of VDD = 15 V, RG = 25 Ω, L = 100 μH, and starting channel temperature of 25°C. This rating is verified per JEDEC JESD24-11 and ensures survivability during inductive switching faults. The UPA2726UT1A-E2-AY's 20 A single avalanche current (IAS) further confirms ruggedness in real-world transient events.
Is UPA2726UT1A-E2-AY RoHS compliant and what is its lead finish?
Yes, the UPA2726UT1A-E2-AY is RoHS compliant with pure tin (Sn) lead plating, indicated by the "-E2-AY" suffix. It contains no lead in external electrodes and meets EU Directive 2011/65/EU without exemptions. This finish provides reliable solderability and intermetallic formation with standard SAC305 reflow profiles used for the UPA2726UT1A-E2-AY.
How does the thermal performance of UPA2726UT1A-E2-AY compare to standard SO-8 MOSFETs?
The UPA2726UT1A-E2-AY achieves Rth(ch-C) = 1.5 °C/W-over 10× better than typical SO-8 MOSFETs (~15–20 °C/W)-due to its exposed drain paddle and direct thermal path to PCB copper. This allows the UPA2726UT1A-E2-AY to dissipate 4.6 W continuously (vs. ~1.5 W for SO-8) on identical board area, enabling smaller heatsinks or fanless operation in high-power density designs.
UPA2726UT1A-E2-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2726UT1A-E2-AY FAQ
1.How can I place an order for UPA2726UT1A-E2-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2726UT1A-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2726UT1A-E2-AY reliable?
The price and inventory of UPA2726UT1A-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2726UT1A-E2-AY is usually 5 days.
3.What payment methods are accepted for UPA2726UT1A-E2-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2726UT1A-E2-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2726UT1A-E2-AY?
UPA2726UT1A-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2726UT1A-E2-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2726UT1A-E2-AY?
For technical support, including UPA2726UT1A-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2726UT1A-E2-AY requirements.
6.How does Aetrix verify that UPA2726UT1A-E2-AY is sourced from the original manufacturer or authorized distributors?
All UPA2726UT1A-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2726UT1A-E2-AY meets industry standards.
7.What is the process for return or replacement of UPA2726UT1A-E2-AY?
All UPA2726UT1A-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2726UT1A-E2-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2726UT1A-E2-AY part is unused and in its original packaging.
Return procedure for UPA2726UT1A-E2-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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