Renesas UPA2727T1A-E1-AY
- Part No.:
- UPA2727T1A-E1-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2727T1A-E1-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:15,000
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Product details
Overview
UPA2727T1A-E1-AY from Renesas Electronics (formerly NEC Electronics) is an N-channel power MOSFET in an 8-pin HVSON package, rated for 30 V VDSS, 16 A DC drain current, and 9.6 mΩ RDS(on) at VGS = 10 V. It features low gate charge (QG = 11 nC), fast switching (td(off) = 41 ns), and integrated gate protection diode - optimized for high-efficiency DC/DC converter power stages.
For engineers reviewing the UPA2727T1A-E1-AY datasheet, UPA2727T1A-E1-AY pinout, UPA2727T1A-E1-AY application, or UPA2727T1A-E1-AY equivalent, key selection criteria include its 4.5 V drive capability (RDS(on)2 = 15 mΩ), thermal resistance (Rth(ch-C) = 2.0 °C/W), avalanche rating (EAS = 26 mJ), and RoHS-compliant pure tin lead plating.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance and fast switching with minimal QGD (3.5 nC). Its body diode exhibits low forward voltage (VF(S-D) = 0.83 V at 16 A) and short reverse recovery time (trr = 27 ns), supporting synchronous rectification in buck converters.
The device operates within a channel temperature range of −55°C to +150°C and is characterized for stable performance across VGS thresholds (1.5–2.5 V) and wide drain current loads (up to 96 A pulsed). Its 8-pin HVSON package integrates a heat spreader for enhanced thermal conduction to the PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in high-side or low-side switch configurations |
| RDS(on)1 | 9.6 mΩ max at VGS = 10 V, ID = 8 A - Enables <1 W conduction loss at 8 A in compact DC/DC designs |
| RDS(on)2 | 15 mΩ max at VGS = 4.5 V, ID = 8 A - Supports logic-level gate drive from 5 V microcontrollers or PWM controllers |
| QG | 11 nC typ - Reduces gate driver power demand and enables >1 MHz switching in high-frequency converters |
| EAS | 26 mJ - Withstands single-pulse inductive energy without failure during load dump or short-circuit events |
| Rth(ch-C) | 2.0 °C/W - Enables efficient heat transfer from channel to exposed drain pad, critical for high-power density layouts |
| trr | 27 ns - Minimizes body diode reverse recovery loss in synchronous buck topologies |
Pinout & Package
UPA2727T1A-E1-AY is housed in an 8-pin HVSON (Heat-Via Small Outline No-lead) package measuring 5.15 mm × 6.0 mm × 1.0 mm max, with an exposed drain thermal pad on the bottom surface. The package uses pure tin (Sn) lead plating and is RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal MOSFET cells; tied to PCB ground plane for low-inductance return path |
| 4 | Gate | Control terminal requiring <11 nC total charge; sensitive to ESD - protected by internal diode but external clamping recommended |
| 5, 6, 7, 8 | Drain | High-current output node connected to exposed thermal pad; must be soldered to large copper area for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 15 mΩ max enables use with 5 V gate drivers without external level-shifting circuitry |
| Low QGD | 3.5 nC typ minimizes Miller-induced switching delay and improves hard-switching efficiency |
| Built-in gate protection diode | ESD protection between gate and source reduces risk of damage during handling and board assembly |
| Thin HVSON package with heat spreader | 1.0 mm max height and exposed drain pad support ultra-thin power modules and space-constrained PCBs |
| RoHS-compliant pure Sn plating | Eliminates lead-based solder compatibility issues and meets global environmental compliance requirements |
Applications
| Point-of-Load DC/DC Converter | Laptop CPU/GPU Voltage Regulator |
|---|---|
Use Scenario: High-current, multi-phase buck converter delivering 1–3 V at up to 30 A per phase near processor die. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 300–1000 kHz with 4.5 V gate drive. Use Value: 15 mΩ RDS(on) at 4.5 V and 27 ns trr reduce conduction and recovery losses, improving full-load efficiency by ≥1.2% versus standard 20 mΩ alternatives. | Use Scenario: Compact VRM solution on thin-profile laptop motherboards where height and thermal headroom are constrained. IC Role / Device Role / Timing Role: High-density power stage switch in 3×3 mm² footprint with direct thermal coupling to PCB copper. Use Value: 2.0 °C/W Rth(ch-C) and 1.0 mm max profile allow sustained 16 A operation without heatsink, enabling fanless or ultra-low-noise thermal design. |
| Industrial PLC Power Supply | USB-C PD Fast Charging Module |
Use Scenario: 24 V input, 5–12 V output isolated or non-isolated supply powering I/O modules and communication interfaces. IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward or secondary-side synchronous rectifier in LLC resonant topology. Use Value: 26 mJ EAS rating ensures robustness against bus transients and inductive kickback in noisy factory environments. | Use Scenario: 20 V/5 A USB-C PD 3.0 power delivery stage requiring rapid dynamic response and tight voltage regulation. IC Role / Device Role / Timing Role: Secondary-side synchronous FET in buck-boost or inverse buck configuration controlled by dedicated PD controller. Use Value: 11 nC QG and 41 ns td(off) support precise timing control and minimize dead-time losses during 300 kHz+ switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 7.0 mΩ @ 10 V; higher QG (22 nC); TO-252 package | Requires larger PCB area and less efficient thermal path than HVSON | Preferred when lower RDS(on) justifies added size and thermal derating |
| DMN3025LFG-7 | RDS(on) = 2.5 mΩ @ 10 V; 6-pin SOT-23 package; rated 30 V/4.5 A | Lower current rating limits use to sub-5 A point-of-load rails | Selected for ultra-compact, low-current auxiliary rails where UPA2727T1A-E1-AY's 16 A capacity is excessive |
Compared with SiR872DP-T1-GE3 and DMN3025LFG-7, the UPA2727T1A-E1-AY uniquely balances 16 A current handling, 4.5 V logic-level drive, and HVSON thermal performance - making it optimal for space- and efficiency-constrained 5–12 V DC/DC systems where both power density and transient robustness matter.
Availability
UPA2727T1A-E1-AY is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, laptop VRMs, and industrial PLC power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturability assurance.
Supply support for UPA2727T1A-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader formed from the merger of NEC Electronics, Renesas Technology, and Hitachi Semiconductor, specializing in microcontrollers, analog, power, and SoC solutions.
The UPA2727T1A-E1-AY belongs to Renesas' legacy μPA high-efficiency power MOSFET family, designed specifically for high-frequency, high-current DC/DC conversion in computing, consumer, and industrial power systems.
FAQ
What is the maximum continuous drain current rating for the UPA2727T1A-E1-AY?
The UPA2727T1A-E1-AY is rated for ±16 A DC drain current at TA = 25°C when mounted on a specified glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25°C ambient, with full current limited to ~8 A at 70°C ambient due to thermal constraints. This rating reflects real-world PCB thermal performance, not idealized heatsink conditions.
Does the UPA2727T1A-E1-AY support 4.5 V gate drive in production systems?
Yes - the UPA2727T1A-E1-AY guarantees RDS(on)2 ≤ 15 mΩ at VGS = 4.5 V and ID = 8 A, confirming robust enhancement-mode operation down to 4.5 V. This allows direct interfacing with 5 V PWM controllers and microcontroller GPIOs without level shifters, validated across temperature and process corners per the official datasheet.
What is the purpose of the built-in gate protection diode in the UPA2727T1A-E1-AY?
The built-in gate-to-source diode in the UPA2727T1A-E1-AY provides ESD protection during handling and assembly, clamping transient voltages before they damage the thin gate oxide. However, the datasheet explicitly states that external protection remains mandatory if system-level overvoltage events exceeding ±20 V are possible - the internal diode is not intended for operational surge suppression.
Can the UPA2727T1A-E1-AY be used in avalanche-rated circuits?
Yes - the UPA2727T1A-E1-AY is fully characterized for single-pulse avalanche with IAS = 16 A and EAS = 26 mJ under defined test conditions (VDD = 15 V, L = 100 μH, RG = 25 Ω). This rating supports reliable operation in inductive switching applications like motor drives or relay snubbers where unclamped inductive energy must be absorbed safely.
Is the UPA2727T1A-E1-AY compatible with lead-free reflow soldering processes?
Yes - the UPA2727T1A-E1-AY uses pure tin (Sn) lead plating and is rated for standard Pb-free reflow profiles (JEDEC J-STD-020). Its maximum peak temperature tolerance is 260°C for 30 seconds, and the package is qualified for moisture sensitivity level (MSL) 1, meaning floor life is unlimited under dry storage conditions.
UPA2727T1A-E1-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2727T1A-E1-AY FAQ
1.How can I place an order for UPA2727T1A-E1-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2727T1A-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2727T1A-E1-AY reliable?
The price and inventory of UPA2727T1A-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2727T1A-E1-AY is usually 5 days.
3.What payment methods are accepted for UPA2727T1A-E1-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2727T1A-E1-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2727T1A-E1-AY?
UPA2727T1A-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2727T1A-E1-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2727T1A-E1-AY?
For technical support, including UPA2727T1A-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2727T1A-E1-AY requirements.
6.How does Aetrix verify that UPA2727T1A-E1-AY is sourced from the original manufacturer or authorized distributors?
All UPA2727T1A-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2727T1A-E1-AY meets industry standards.
7.What is the process for return or replacement of UPA2727T1A-E1-AY?
All UPA2727T1A-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2727T1A-E1-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2727T1A-E1-AY part is unused and in its original packaging.
Return procedure for UPA2727T1A-E1-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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