Renesas UPA2727T1A-E1-AZ
- Part No.:
- UPA2727T1A-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2727T1A-E1-AZ.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
UPA2727T1A-E1-AZ from Renesas Electronics (formerly NEC Electronics) is an N-channel power MOSFET designed for high-efficiency DC/DC converter switching stages. It delivers RDS(on) = 9.6 mΩ max at VGS = 10 V / ID = 8 A, supports ±16 A DC drain current, and features a thin-profile 8-pin HVSON package with integrated gate protection diode.
For engineers reviewing the UPA2727T1A-E1-AZ datasheet, UPA2727T1A-E1-AZ pinout, UPA2727T1A-E1-AZ application, or UPA2727T1A-E1-AZ equivalent, key selection criteria include low-voltage gate drive capability (RDS(on) = 15 mΩ max at VGS = 4.5 V), low QGD = 3.5 nC typ., and thermal resistance Rth(ch–C) = 2.0 °C/W for high-power-density board layouts.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for synchronous rectification in buck converters. Its dual RDS(on) specs (9.6 mΩ @ 10 V, 15 mΩ @ 4.5 V) enable compatibility with both 5 V and 3.3 V logic-level gate drivers, while the built-in gate-source ESD protection diode reduces external component count.
The device's 30 V VDSS, 16 A ID(DC), and 26 mJ EAS support robust operation under transient overloads in point-of-load regulators. Its 8-pin HVSON package places all three source pins (1–3) and four drain pins (5–8) on opposite edges to minimize parasitic inductance and enhance thermal spreading to the PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V input DC/DC stages with margin |
| RDS(on)1 | 9.6 mΩ max @ VGS = 10 V, ID = 8 A - Enables <1 W conduction loss at 8 A |
| RDS(on)2 | 15 mΩ max @ VGS = 4.5 V, ID = 8 A - Supports direct drive from 3.3 V microcontroller GPIOs |
| QGD | 3.5 nC typ. @ VDD = 15 V, ID = 16 A - Reduces switching loss and improves dV/dt immunity |
| ID(DC) | ±16 A - Sustains continuous output current in compact 12 V → 1.2 V/15 A POL converters |
| Rth(ch–C) | 2.0 °C/W - Enables efficient heat transfer from channel to PCB copper via exposed drain pad |
| EAS | 26 mJ - Withstands single-pulse avalanche energy during inductive turn-off transients |
Pinout & Package
UPA2727T1A-E1-AZ uses an 8-pin HVSON (Heat Spreader Outline No-Lead) package measuring 5.15 mm × 6.0 mm × 1.0 mm max, with an exposed drain thermal pad on the bottom surface. The package is RoHS-compliant and lead-free (Sn-Bi plating).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel source terminals reduce bond-wire inductance and improve current sharing |
| 4 | Gate | Single gate input with integrated ESD protection diode to source |
| 5, 6, 7, 8 | Drain | Four drain terminals connected to exposed thermal pad - primary path for heat dissipation and high-current return |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 15 mΩ max enables use with 3.3 V gate drivers without level-shifting circuitry |
| Low QGD | 3.5 nC typ. minimizes Miller-induced switching delay and shoot-through risk in synchronous topologies |
| Built-in gate protection diode | Integrated gate-to-source ESD diode eliminates need for external TVS in most board-level ESD environments |
| Thermally enhanced HVSON | Exposed drain pad and multiple drain/source pins reduce thermal impedance to PCB by >60% vs. standard SO-8 |
Applications
| Point-of-Load DC/DC Converter | USB-C Power Delivery Sink |
|---|---|
Use Scenario: High-current step-down regulation from 12 V or 20 V bus to 1.0–3.3 V for FPGA, ASIC, or SoC core rails. IC Role / Device Role: Synchronous high-side or low-side switch in buck topology with 500 kHz–2 MHz switching frequency. Use Value: 9.6 mΩ RDS(on) and 2.0 °C/W Rth(ch–C) jointly limit junction temperature rise to <45°C at 12 A, enabling fanless operation. | Use Scenario: Secondary-side synchronous rectifier in 45–65 W USB-C PD adapters delivering 5–20 V at up to 3 A. IC Role / Device Role: Low-side switch controlling power delivery to Type-C port controller and load switches. Use Value: 15 mΩ RDS(on) at 4.5 V gate drive ensures full conduction even when PD controller outputs only 3.3 V logic signals. |
| Industrial Motor Driver Half-Bridge | Telecom Intermediate Bus Converter |
Use Scenario: Compact half-bridge stage driving 24 V BLDC gate drivers or solenoid loads in PLC I/O modules. IC Role / Device Role: Low-side switch paired with complementary high-side driver in 24 V motor control H-bridge. Use Value: 26 mJ EAS rating withstands inductive kickback during rapid PWM commutation without snubber networks. | Use Scenario: 48 V → 12 V intermediate bus conversion in telecom line cards requiring high reliability and low standby loss. IC Role / Device Role: Primary-side switch in fixed-frequency forward or active-clamp flyback topology. Use Value: 30 V VDSS provides 60% margin over 12 V output rail, ensuring safe operation during output short-circuit recovery. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 7.0 mΩ @ 10 V; larger 5×6 mm PQFN package; no integrated gate protection diode | Higher efficiency at 10 V drive but requires external ESD protection and larger PCB area | Preferred when maximum efficiency at 10 V gate drive is critical and layout space allows |
| IRF7759L2TRPBF | RDS(on) = 11.5 mΩ @ 4.5 V; 5×6 mm SO-8 package; higher Rth(ch–A) = 50 °C/W | Lower gate charge but significantly worse thermal performance on standard FR4 | Acceptable for lower-current (<8 A), lower-duty-cycle applications where cost is prioritized over thermal headroom |
Compared with SiR872DP-T1-GE3 and IRF7759L2TRPBF, the UPA2727T1A-E1-AZ offers superior thermal coupling to PCB (Rth(ch–C) = 2.0 °C/W), integrated gate protection, and balanced 4.5 V/10 V RDS(on) performance-making it optimal for space-constrained, thermally demanding DC/DC converters where reliability and design simplicity are prioritized.
Availability
UPA2727T1A-E1-AZ is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, USB-C power delivery systems, and industrial motor driver half-bridges requiring stable component supply and long-term production continuity.
Supply support for UPA2727T1A-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA2727T1A-E1-AZ belongs to Renesas' μPA series of low-voltage power MOSFETs engineered specifically for high-frequency, high-efficiency DC/DC conversion in space-constrained embedded power systems.
FAQ
What is the maximum continuous drain current rating for UPA2727T1A-E1-AZ?
The UPA2727T1A-E1-AZ is rated for ±16 A DC drain current at TA = 25°C when mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. Derating applies above 25°C ambient; at 70°C, the usable DC current drops to approximately ±10 A due to thermal limits. This rating reflects real-world board-level thermal performance-not just die capability-and is validated per the JEDEC test condition specified in the G18630EJ2V0DS datasheet.
Does UPA2727T1A-E1-AZ require external gate protection?
The UPA2727T1A-E1-AZ integrates a gate-to-source protection diode to suppress ESD events, as confirmed in the "Features" and "Equivalent Circuit" sections of its datasheet. However, the datasheet explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Therefore, while the internal diode handles typical board-level ESD (IEC 61000-4-2 Level 2), external Zener clamping remains necessary for systems exposed to sustained overvoltage transients or lightning-induced surges.
What is the thermal resistance from channel to case (Rth(ch–C)) for UPA2727T1A-E1-AZ, and how is it measured?
The UPA2727T1A-E1-AZ has a channel-to-case thermal resistance of 2.0 °C/W, measured from the silicon channel to the exposed drain pad surface. This value is determined using a cold plate method per JESD51-1, with the device soldered to a standardized copper test block. It reflects direct conduction path efficiency and is independent of PCB layout-making it a reliable metric for estimating junction temperature when the drain pad is thermally connected to a large copper pour or heatsink.
Can UPA2727T1A-E1-AZ be used with 3.3 V gate drive in high-frequency switching applications?
Yes-the UPA2727T1A-E1-AZ is characterized for RDS(on)2 = 15 mΩ max at VGS = 4.5 V and ID = 8 A, and typical gate threshold voltage (VGS(off)) is 1.5–2.5 V. At 3.3 V drive, it achieves sufficient enhancement for most 500 kHz–1 MHz DC/DC applications, though conduction loss increases ~25% versus 4.5 V. Switching performance remains viable due to low QGD = 3.5 nC, minimizing Miller plateau duration and ensuring clean turn-on/turn-off transitions.
Is UPA2727T1A-E1-AZ RoHS-compliant and lead-free?
Yes-UPA2727T1A-E1-AZ uses Sn-Bi lead plating and is explicitly marked Pb-free in the "Ordering Information" section of its datasheet (G18630EJ2V0DS). It complies with EU RoHS Directive 2011/65/EU and meets JEDEC JS-001 ESD classification standards. The "-AZ" suffix denotes the Sn-Bi finish, and the device contains no intentionally added lead in external electrodes or packaging materials.
UPA2727T1A-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2727T1A-E1-AZ FAQ
1.How can I place an order for UPA2727T1A-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2727T1A-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2727T1A-E1-AZ reliable?
The price and inventory of UPA2727T1A-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2727T1A-E1-AZ is usually 5 days.
3.What payment methods are accepted for UPA2727T1A-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2727T1A-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2727T1A-E1-AZ?
UPA2727T1A-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2727T1A-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2727T1A-E1-AZ?
For technical support, including UPA2727T1A-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2727T1A-E1-AZ requirements.
6.How does Aetrix verify that UPA2727T1A-E1-AZ is sourced from the original manufacturer or authorized distributors?
All UPA2727T1A-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2727T1A-E1-AZ meets industry standards.
7.What is the process for return or replacement of UPA2727T1A-E1-AZ?
All UPA2727T1A-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with UPA2727T1A-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2727T1A-E1-AZ part is unused and in its original packaging.
Return procedure for UPA2727T1A-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPA2727T1A-E1-AZ Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

