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Renesas UPA2730TP-E2-AZ
- Part No.:
- UPA2730TP-E2-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSOIC (0.173", 4.40mm Width)
- Datasheet:
-
UPA2730TP-E2-AZ.pdf
- Description:
- UPA2730 - POWER FIELD-EFFECT TRA
- Quantity:
- Payment:
- Shipping:
Inventory:25,000
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Product details
Overview
UPA2730TP-E2-AZ from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It features RDS(on) = 7.0 mΩ max at VGS = –10 V, –7.5 A drain current, –30 V drain-to-source voltage rating, and Power HSOP8 surface-mount package with integrated heat spreader.
For engineers reviewing the UPA2730TP-E2-AZ datasheet, UPA2730TP-E2-AZ pinout, UPA2730TP-E2-AZ application, or UPA2730TP-E2-AZ equivalent, key selection criteria include low-voltage gate drive capability (RDS(on) ≤ 12.0 mΩ at VGS = –4.0 V), avalanche energy rating (EAS = 22.5 mJ), and thermal performance in compact portable power systems.
Technical Context
The UPA2730TP-E2-AZ employs a trench-gate P-channel structure optimized for high-current switching with low conduction loss. Its gate threshold voltage (VGS(off) = –1.0 to –2.5 V) enables reliable turn-on with standard logic-level negative gate drive, while its body diode exhibits trr = 65 ns and Qrr = 62 nC under specified conditions.
Designed for unidirectional load switching in battery-side protection, it supports single-pulse avalanche operation up to IAS = –15 A with VDD = –15 V and L = 100 µH. The device's Ciss = 4670 pF (typ.) and QG = 97 nC reflect trade-offs between switching speed and gate drive strength in space-constrained DC-DC and battery cutoff applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –30 V - Maximum blocking voltage for Li-ion battery stack (≤12S) and 3.3/5 V system rail isolation |
| RDS(on) @ VGS = –4.5 V | 10.5 mΩ max - Enables <100 mW conduction loss at 7.5 A in battery discharge path |
| ID(DC) | –20 A - Continuous current rating on FR4 PCB (1″×1″×0.8 mm), suitable for main battery switch |
| EAS | 22.5 mJ - Energy-handling capacity during inductive load interruption without failure |
| Ciss | 4670 pF typ. - Gate input capacitance dictating required gate driver peak current for <200 ns turn-off delay |
| tr/tf | 28 ns / 110 ns - Rise/fall times enabling >1 MHz PWM operation with controlled EMI in compact layouts |
| Tch max | 150 °C - Channel temperature limit defining safe derating curve for ambient temperatures up to 125 °C |
Pinout & Package
UPA2730TP-E2-AZ is housed in Power HSOP8 package (6.0 × 4.4 × 1.49 mm), featuring exposed drain paddle for thermal conduction and 0.65 mm pitch leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8, 9 | Drain | Internally connected to exposed thermal pad; primary current path and heat sink interface |
| 4 | Gate | Control terminal requiring –4.0 V to –10 V for full enhancement; sensitive to ESD (±20 V rating) |
| Source | Source | Reference node for gate drive; tied to battery negative or system ground in high-side switch configuration |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at logic-level drive | 12.0 mΩ max at VGS = –4.0 V enables direct interface with 5 V microcontroller GPIO in battery cutoff control |
| Integrated heat spreader | Exposed drain paddle reduces Rth(ch–A) to 89.3 °C/W on standard FR4, allowing 3 W dissipation at TA = 25 °C |
| High avalanche ruggedness | 22.5 mJ single-pulse EAS protects against inductive kickback in battery disconnect events |
| Fast body diode recovery | 65 ns trr and 62 nC Qrr minimize reverse recovery losses in synchronous rectifier or back-to-back FET configurations |
| Small footprint | Power HSOP8 (6.0 × 4.4 mm) saves board area vs. SO-8 while maintaining thermal performance comparable to DPAK |
Applications
| Battery Protection Circuit | Notebook Computer Power Management |
|---|---|
Use Scenario: Bidirectional overcurrent and short-circuit protection in Li-ion battery packs using dual-MOSFET back-to-back configuration. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path; activated by protection IC during fault detection. Use Value: Low RDS(on) minimizes voltage drop across protection FETs, preserving battery runtime and enabling accurate current sensing. | Use Scenario: System power rail sequencing and CPU core voltage enable/disable during sleep/wake transitions. IC Role / Device Role / Timing Role: Load switch isolating 3.3 V or 5 V subsystems; driven by PMIC or baseband processor GPIO. Use Value: Fast 28 ns rise time ensures clean power-up timing alignment; low gate charge reduces drive circuit complexity. |
| USB Power Delivery Switch | Industrial Portable Equipment |
Use Scenario: USB-C port power path control supporting reversible plug insertion and 20 V/5 A operation. IC Role / Device Role / Timing Role: P-channel high-side switch managing VBUS connection; coordinated with CC logic controller. Use Value: –30 V VDSS withstands USB PD transient surges; avalanche rating absorbs hot-plug energy spikes. | Use Scenario: Main battery disconnect in handheld test instruments with extended operating temperature range. IC Role / Device Role / Timing Role: Primary power isolation switch activated by MCU upon low-battery or safety shutdown. Use Value: Stable RDS(on) over –55 °C to +125 °C ambient ensures consistent performance in field-deployed equipment. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ VGS = –4.5 V; SOT-23 package; lower current rating (–2.7 A) | Suitable only for sub-1 A loads; lacks avalanche rating and thermal pad | Select for cost-sensitive, low-power battery switches where board space is critical but power handling is minimal |
| IRF7425PBF | RDS(on) = 30 mΩ @ VGS = –10 V; SO-8 package; higher gate charge (QG = 25 nC) | Requires stronger gate driver; no specified EAS rating; larger footprint than HSOP8 | Choose when legacy SO-8 layout compatibility is mandatory and avalanche robustness is not required |
Compared with Si2301DDS-T1-GE3 and IRF7425PBF, the UPA2730TP-E2-AZ delivers superior conduction efficiency at high current, proven avalanche energy tolerance, and optimized thermal performance in a compact thermally enhanced package-making it the preferred choice for demanding Li-ion protection and portable power management.
Availability
UPA2730TP-E2-AZ is available at Aetrix Electronics and suitable for notebook computers, portable medical devices, and industrial battery-powered equipment requiring stable component supply and long-term lifecycle support.
Supply support for UPA2730TP-E2-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.
The UPA2730TP-E2-AZ belongs to Renesas' µPA series of power MOSFETs engineered specifically for high-efficiency, space-constrained battery management and portable power systems.
FAQ
What is the maximum continuous drain current rating for UPA2730TP-E2-AZ at 25°C ambient?
The UPA2730TP-E2-AZ has a maximum continuous drain current (ID(DC)) of –20 A when mounted on a standard glass epoxy board (1 inch × 1 inch × 0.8 mm) at TA = 25°C. This rating assumes proper PCB copper pour and thermal via design under the exposed drain pad. At higher ambient temperatures, derating applies per the datasheet's power dissipation vs. temperature curve.
Does UPA2730TP-E2-AZ support gate drive from a 3.3 V microcontroller?
No-UPA2730TP-E2-AZ requires a negative gate-to-source voltage for turn-on and is not compatible with positive 3.3 V logic. Its gate threshold is specified between –1.0 V and –2.5 V, and full enhancement (RDS(on) ≤ 12.0 mΩ) needs VGS ≤ –4.0 V. A dedicated negative bias generator or level-shifting circuit is required to drive the UPA2730TP-E2-AZ from 3.3 V logic.
What is the avalanche energy rating of UPA2730TP-E2-AZ and how is it tested?
The UPA2730TP-E2-AZ is rated for single-pulse avalanche energy (EAS) of 22.5 mJ, measured under conditions of VDD = –15 V, L = 100 µH, RG = 25 Ω, and starting channel temperature of 25°C. This rating validates its ability to safely absorb inductive energy during abrupt current interruption-critical for battery disconnect reliability in UPA2730TP-E2-AZ-based protection circuits.
Can UPA2730TP-E2-AZ be used in a back-to-back configuration for bidirectional blocking?
Yes-UPA2730TP-E2-AZ is commonly deployed in back-to-back P-channel configuration for full bidirectional blocking in Li-ion battery protection IC designs. Its symmetric source/drain structure (body diode oriented from source to drain) allows complementary placement to block both charge and discharge currents. The low RDS(on) and fast body diode recovery (trr = 65 ns) make UPA2730TP-E2-AZ well-suited for this topology.
Is UPA2730TP-E2-AZ RoHS compliant and what is its moisture sensitivity level?
Yes-UPA2730TP-E2-AZ is RoHS compliant per EU Directive 2011/65/EU, as confirmed by Renesas Electronics' environmental compliance documentation. Its moisture sensitivity level (MSL) is Level 1 (unlimited floor life at ≤30°C/85% RH), meaning no bake preconditioning is required before reflow soldering, simplifying manufacturing for UPA2730TP-E2-AZ integration.
UPA2730TP-E2-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerSOIC (0.173", 4.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 7mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 97 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4670 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Ta), 40W (Tc)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HSOP
UPA2730TP-E2-AZ FAQ
1.How can I place an order for UPA2730TP-E2-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2730TP-E2-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2730TP-E2-AZ reliable?
The price and inventory of UPA2730TP-E2-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2730TP-E2-AZ is usually 5 days.
3.What payment methods are accepted for UPA2730TP-E2-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2730TP-E2-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2730TP-E2-AZ?
UPA2730TP-E2-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2730TP-E2-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2730TP-E2-AZ?
For technical support, including UPA2730TP-E2-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2730TP-E2-AZ requirements.
6.How does Aetrix verify that UPA2730TP-E2-AZ is sourced from the original manufacturer or authorized distributors?
All UPA2730TP-E2-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2730TP-E2-AZ meets industry standards.
7.What is the process for return or replacement of UPA2730TP-E2-AZ?
All UPA2730TP-E2-AZ units undergo pre-shipment inspection (PSI). If there is an issue with UPA2730TP-E2-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2730TP-E2-AZ part is unused and in its original packaging.
Return procedure for UPA2730TP-E2-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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