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Renesas UPA2731T1A-E1-AZ
- Part No.:
- UPA2731T1A-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2731T1A-E1-AZ.pdf
- Description:
- P-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:6,000
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Product details
Overview
UPA2731T1A-E1-AZ from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It delivers RDS(on) = 3.3 mΩ max at VGS = −10 V / ID = −22 A, supports −30 V drain-to-source voltage, and uses an 8-pin HVSON surface-mount package with integrated gate protection diode.
For engineers reviewing the UPA2731T1A-E1-AZ datasheet, UPA2731T1A-E1-AZ pinout, UPA2731T1A-E1-AZ application, or UPA2731T1A-E1-AZ equivalent, key selection criteria include low-voltage gate drive capability (−4.5 V), avalanche energy rating (48 mJ), body diode forward voltage (0.85 V), and thermal resistance (Rth(ch–A) = 83.3°C/W on glass epoxy board).
Technical Context
This device operates as a high-side load switch in battery protection IC subsystems, where its −30 V VDSS rating and −22 A single-pulse avalanche current enable robust overvoltage and short-circuit handling. The built-in gate protection diode mitigates ESD risk but requires external clamping for transients exceeding ±20 V.
Its switching performance is characterized by 15 ns turn-on delay and 760 ns turn-off delay under −15 V VDD, −22 A load, and 10 Ω gate resistance - optimized for fast, low-loss charge/discharge control in dual-MOSFET protection configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V: Maximum reverse blocking voltage for Li-ion battery stack protection up to 3S configuration. |
| RDS(on)1 | 3.3 mΩ max @ VGS = −10 V / ID = −22 A: Enables <1 W conduction loss at full-rated DC current. |
| RDS(on)2 | 6.4 mΩ max @ VGS = −4.5 V / ID = −22 A: Supports logic-level gate drive from common battery monitor IC outputs. |
| EAS | 48 mJ: Energy-handling capacity during unclamped inductive switching events in protection FET layouts. |
| Ciss | 3620 pF typ @ VDS = −10 V: Determines gate drive strength requirement for <1 µs switching transitions. |
| Tch max | 150°C: Channel temperature limit defining safe continuous operation with derated power above 25°C ambient. |
| QG | 149 nC: Total gate charge defining minimum driver current needed for 100 ns rise/fall times. |
Pinout & Package
Package: 8-pin HVSON (5.0 × 6.0 × 1.0 mm), surface-mount, lead-free (Pb-free), with exposed drain paddle for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node tied to battery negative or system ground; electrically and thermally connected to internal substrate. |
| 4 | Gate | Control input requiring negative bias relative to source; protected by integrated Zener diode to ±20 V. |
| 5, 6, 7, 8 | Drain | Main current path to battery positive; all four pins bonded to exposed copper paddle for low-inductance, high-current routing. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4.5 V | 6.4 mΩ max enables direct interface with 4.5 V logic or battery monitor ICs without level-shifting. |
| Built-in gate protection diode | Zener-clamped gate-source junction limits transient overvoltage to ±20 V, reducing external ESD component count. |
| High avalanche energy rating | 48 mJ single-pulse rating allows reliable operation during battery short-circuit events without external snubbers. |
| Optimized for battery protection topology | Source-connected terminals (pins 1–3) and multi-drain layout (pins 5–8) support Kelvin-sensing and low-impedance return paths. |
| Thermally enhanced HVSON package | Exposed drain paddle lowers Rth(ch–A) to 83.3°C/W, enabling 4.6 W pulsed dissipation on standard FR-4 PCB. |
Applications
| Lithium-Ion Battery Protection Circuit | Notebook Computer Power Management |
|---|---|
|
Use Scenario: Dual-MOSFET configuration isolating cell stack from load during overcurrent, overvoltage, or overtemperature faults. IC Role / Device Role / Timing Role: High-side P-channel switch controlled by battery protection IC (e.g., S-8261) to interrupt charging/discharging paths. Use Value: 3.3 mΩ RDS(on) minimizes voltage drop across protection FET, preserving usable battery capacity and reducing thermal stress. |
Use Scenario: System power rail switching between AC adapter and battery sources in clamshell laptops. IC Role / Device Role / Timing Role: Load switch enabling seamless source transition with minimal dropout and no reverse current flow. Use Value: Low Ciss (3620 pF) and fast switching (15 ns td(on)) reduce cross-conduction risk during dynamic source handover. |
| USB-C Power Delivery Input Protection | Industrial Portable Equipment Power Control |
|
Use Scenario: Reverse-polarity and overvoltage protection at USB-C PD input before buck converter stage. IC Role / Device Role / Timing Role: Front-end protection switch activated only when valid PD contract is established and VBUS is stable. Use Value: −30 V VDSS withstands 20 V PD 3.0 extended range surges; built-in gate diode simplifies transient voltage suppressor design. |
Use Scenario: Main power switch for handheld test instruments powered by swappable Li-ion packs. IC Role / Device Role / Timing Role: Isolation FET ensuring zero standby current when unit is powered off via mechanical switch or firmware command. Use Value: −1 µA IDSS leakage preserves battery shelf life >6 months; 150°C Tch rating supports sealed enclosure thermal profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 4.5 mΩ @ −10 V, but higher Ciss (4900 pF); SO-8 package with larger footprint and higher Rth. | Less suitable for space-constrained battery packs; requires stronger gate driver due to higher QG (170 nC). | Prefer when legacy SO-8 layout reuse is required and thermal margin exceeds 10°C. |
| IRF7425TRPBF | RDS(on) = 5.2 mΩ @ −10 V; TO-252 package; no integrated gate protection diode. | Needs external TVS for gate protection; less optimal for ultra-thin notebook designs due to height and thermal pad limitations. | Choose only if cost sensitivity outweighs board area and reliability requirements. |
Compared with UPA2731T1A-E1-AZ, Si7157DP-T1-GE3 offers slightly lower RDS(on) but demands more gate drive energy and occupies 3× the PCB area, while IRF7425TRPBF lacks integrated ESD protection and requires additional components for robust battery protection deployment.
Availability
UPA2731T1A-E1-AZ is available at Aetrix Electronics and suitable for lithium-ion battery protection circuits, notebook computer power management systems, and USB-C power delivery input protection requiring stable component supply and long-term industrial availability.
Supply support for UPA2731T1A-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices for industrial and consumer systems.
The UPA2731T1A-E1-AZ belongs to Renesas' μPA series of power MOSFETs engineered specifically for compact, high-efficiency battery protection and portable power management applications.
FAQ
What is the maximum continuous drain current rating for UPA2731T1A-E1-AZ?
The UPA2731T1A-E1-AZ has a DC drain current rating of −44 A at TA = 25°C on a standard glass epoxy board. However, practical continuous current is limited by thermal dissipation: at 25°C ambient, the 1.5 W total power dissipation rating restricts sustained ID to approximately −22 A when RDS(on) = 3.3 mΩ, assuming no forced airflow or heatsinking. Derating is required above 25°C per the published thermal resistance curve.
Does UPA2731T1A-E1-AZ require an external gate resistor for stability?
Yes - while the UPA2731T1A-E1-AZ integrates a gate protection diode, an external gate resistor (typically 10–47 Ω) is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies switching time measurements using RG = 10 Ω, and omitting this resistor may cause oscillation or shoot-through in high-speed protection circuits using the UPA2731T1A-E1-AZ.
Can UPA2731T1A-E1-AZ be used in avalanche mode repeatedly?
No - the UPA2731T1A-E1-AZ is rated for single-pulse avalanche energy (EAS = 48 mJ), not repetitive avalanche. Its avalanche capability is intended for fault tolerance during rare transient events like battery short circuits, not for continuous operation. Repeated avalanche stress degrades RDS(on) and reduces long-term reliability of the UPA2731T1A-E1-AZ.
Is the HVSON package of UPA2731T1A-E1-AZ compatible with standard reflow profiles?
Yes - the UPA2731T1A-E1-AZ uses a Pb-free HVSON package qualified for JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C for ≤30 seconds. The exposed drain paddle improves thermal transfer during soldering and ensures consistent void-free attachment when stencil aperture and paste volume are optimized per Renesas' mounting guidelines for the UPA2731T1A-E1-AZ.
What is the body diode forward voltage specification for UPA2731T1A-E1-AZ?
The body diode (source-to-drain) forward voltage of the UPA2731T1A-E1-AZ is specified as 0.85 V typical at IF = 44 A and VGS = 0 V. This low VF supports efficient reverse-current conduction during freewheeling phases in synchronous rectifier or back-to-back FET configurations commonly deployed with the UPA2731T1A-E1-AZ in battery protection IC reference designs.
UPA2731T1A-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2731T1A-E1-AZ FAQ
1.How can I place an order for UPA2731T1A-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2731T1A-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2731T1A-E1-AZ reliable?
The price and inventory of UPA2731T1A-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2731T1A-E1-AZ is usually 5 days.
3.What payment methods are accepted for UPA2731T1A-E1-AZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2731T1A-E1-AZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2731T1A-E1-AZ?
UPA2731T1A-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2731T1A-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2731T1A-E1-AZ?
For technical support, including UPA2731T1A-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2731T1A-E1-AZ requirements.
6.How does Aetrix verify that UPA2731T1A-E1-AZ is sourced from the original manufacturer or authorized distributors?
All UPA2731T1A-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2731T1A-E1-AZ meets industry standards.
7.What is the process for return or replacement of UPA2731T1A-E1-AZ?
All UPA2731T1A-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with UPA2731T1A-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2731T1A-E1-AZ part is unused and in its original packaging.
Return procedure for UPA2731T1A-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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