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Renesas UPA2732T1A-E1-AY

Part No.:
UPA2732T1A-E1-AY
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixUPA2732T1A-E1-AY.pdf
Description:
P-CHANNEL POWER MOSFET
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,000

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Product details

Overview

UPA2732T1A-E1-AY from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection and power management in notebook computers. It delivers RDS(on) = 3.7 mΩ max at VGS = −10 V / ID = −20 A, supports −30 V VDSS, and features built-in gate protection diode in an 8-pin HVSON package.

For engineers reviewing the UPA2732T1A-E1-AY datasheet, UPA2732T1A-E1-AY pinout, UPA2732T1A-E1-AY application, or UPA2732T1A-E1-AY equivalent, key selection criteria include low-voltage gate drive capability (RDS(on)2 = 6.7 mΩ @ VGS = −4.5 V), avalanche energy rating (EAS = 40 mJ), and surface-mount thermal performance on standard FR-4 PCBs.

Technical Context

This device operates as a high-side load switch in battery protection IC subsystems, where its negative threshold voltage (VGS(off) = −1.0 to −2.5 V) enables direct control by system logic without level-shifting. Its low Ciss (3280 pF typ.) and fast switching (td(off) = 680 ns) support efficient pulsed operation in overcurrent and short-circuit response circuits.

The integrated body diode (VF(S-D) = 0.85–1.2 V @ IF = 40 A) provides reverse-current blocking during charge/discharge transitions, while the 8-pin HVSON package (5.15 × 6.0 mm) places all three source pins (1–3) and four drain pins (5–8) on opposing edges to minimize current loop inductance and improve thermal spreading.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS−30 V - Maximum drain-source blocking voltage for Li-ion battery stack (≤12.6 V) with safety margin.
RDS(on)13.7 mΩ max @ VGS = −10 V - Enables ≤0.74 W conduction loss at −20 A DC, critical for thermal budget in thin notebooks.
RDS(on)26.7 mΩ max @ VGS = −4.5 V - Supports logic-level gate drive from 5 V or 3.3 V controllers without external driver.
EAS40 mJ - Withstands single-pulse avalanche events during battery short-circuit transients without failure.
Ciss3280 pF typ. - Low input capacitance reduces gate drive power and speeds up turn-on in protection IC timing loops.
Tch max150 °C - Channel temperature limit compatible with JEDEC JESD22-A103 reflow profiles and long-term reliability at 85 °C ambient.

Pinout & Package

Package: 8-pin HVSON (5.15 mm × 6.0 mm × 1.0 mm max), exposed drain pad for thermal conduction to PCB copper.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3SourceCommon source connection; low-inductance parallel routing required for high di/dt battery fault currents.
4GateControl terminal; requires external RC snubber if driven by high-impedance protection IC outputs.
5, 6, 7, 8DrainHigh-current drain path; pins 5–8 are internally bonded to the exposed thermal pad for PCB heat sinking.

Key Features

FeatureDesign Value
Low RDS(on) at −4.5 V6.7 mΩ max enables direct interface with 5 V/3.3 V battery protection ICs without gate boosting.
Built-in gate protection diodeESD-rated diode between gate and source prevents latch-up during handling and board assembly.
Avalanche-rated operationRated for single-pulse EAS = 40 mJ ensures robustness against inductive kickback in battery disconnect events.
Optimized for Li-ion systemsSpecified parameters (e.g., VGS(off), QG = 133 nC) align with JEITA EM-1101 battery pack protection timing requirements.

Applications

Li-ion Battery Protection CircuitNotebook Computer Power Management

Use Scenario: Monitors cell voltage and current to disconnect battery pack during overcharge, over-discharge, or short circuit.

IC Role / Device Role / Timing Role: High-side P-channel switch controlled by protection IC to interrupt main discharge path within <100 μs.

Use Value: Low RDS(on) minimizes voltage drop across FET during normal operation, preserving battery runtime and accuracy of voltage sensing.

Use Scenario: Controls power delivery to CPU/GPU VRMs and peripheral rails during sleep/wake transitions.

IC Role / Device Role / Timing Role: Load switch enabling rapid rail sequencing and inrush current limiting via gate slew-rate control.

Use Value: Fast td(off) = 680 ns and low QG allow precise timing alignment with system power-state controllers.

USB-C Power Delivery SinkIndustrial Portable Equipment

Use Scenario: Implements input overvoltage/overcurrent protection for USB-C PD receivers accepting up to 20 V.

IC Role / Device Role / Timing Role: Primary protection switch placed between connector and PD controller, triggered by fault signals.

Use Value: −30 V VDSS and EAS rating ensure safe clamping during 20 V PD transient surges without derating.

Use Scenario: Powers motor drivers and sensors in handheld test equipment with rechargeable Li-ion packs.

IC Role / Device Role / Timing Role: Isolation switch decoupling battery from sensitive analog front-ends during calibration sequences.

Use Value: Low leakage (IDSS = −1 μA max) prevents standby current drain that would reduce battery shelf life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si2301DS-T1-E3RDS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; lower ID(DC) = −2.7 A.Suitable only for sub-3 A loads; not rated for avalanche or high-pulse battery faults.Select when space-constrained and power dissipation <0.3 W; avoid in primary battery protection paths.
IRF7425PBFRDS(on) = 29 mΩ @ −4.5 V; SO-8 package; higher Ciss = 1600 pF; no specified EAS.Lacks avalanche rating and gate protection diode; requires external ESD protection in portable designs.Prefer for cost-sensitive industrial supplies where battery-level fault robustness is not required.

Compared with Si2301DS-T1-E3 and IRF7425PBF, the UPA2732T1A-E1-AY offers superior conduction efficiency at logic-level gate drive, integrated ESD protection, and certified avalanche capability-making it uniquely suited for primary Li-ion protection switches where reliability under fault conditions is non-negotiable.

Availability

UPA2732T1A-E1-AY is available at Aetrix Electronics and suitable for notebook computer power management, Li-ion battery protection circuits, and USB-C power delivery sink designs requiring stable component supply and long-lifecycle support.

Supply support for UPA2732T1A-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for automotive, industrial, and consumer applications.

The UPA2732T1A-E1-AY belongs to Renesas' μPA series of low-RDS(on) power MOSFETs engineered specifically for high-efficiency, compact battery-powered systems requiring robust fault tolerance.

FAQ

What is the maximum continuous drain current rating for UPA2732T1A-E1-AY?

The UPA2732T1A-E1-AY has a maximum continuous drain current (ID(DC)) of −40 A at TA = 25°C on a standard glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25°C ambient; at 85°C, usable ID(DC) drops to approximately −25 A per the SOA curve. This rating assumes proper PCB copper area for thermal conduction from the exposed drain pad.

Does UPA2732T1A-E1-AY require an external gate resistor for stability?

Yes, UPA2732T1A-E1-AY benefits from an external gate resistor (typically 10–47 Ω) to dampen ringing caused by its low Ciss and high dV/dt during switching. The datasheet specifies td(off) and tf test conditions using RG = 10 Ω; omitting this resistor may cause oscillation or shoot-through in high-speed protection circuits.

Is UPA2732T1A-E1-AY RoHS compliant and lead-free?

Yes, UPA2732T1A-E1-AY is RoHS compliant and lead-free. The "E1-AZ" suffix explicitly denotes Pb-free construction (no lead in external electrodes), meeting EU RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 3 marking requirements.

Can UPA2732T1A-E1-AY be used in avalanche mode repeatedly?

No, UPA2732T1A-E1-AY is rated for single-pulse avalanche only (EAS = 40 mJ, IAS = −20 A). Repeated avalanche operation is not characterized or guaranteed and may degrade channel integrity. System design must ensure fault conditions are cleared before subsequent cycles-e.g., via fuse blow or controller lockout after first event.

What is the thermal resistance from channel to ambient for UPA2732T1A-E1-AY?

The transient thermal resistance (Rth(ch-A)) of UPA2732T1A-E1-AY is 83.3 °C/W when mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board. Steady-state Rth(ch-A) is higher; for continuous operation, use the derating curve in the datasheet to determine safe ID at target TA. The low Rth(ch-C) = 1.5 °C/W indicates excellent conduction to the PCB copper layer.

UPA2732T1A-E1-AY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPA2732T1A-E1-AY FAQ

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Please submit a Request for Quotation (RFQ) for UPA2732T1A-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2732T1A-E1-AY reliable?

The price and inventory of UPA2732T1A-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2732T1A-E1-AY is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2732T1A-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

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UPA2732T1A-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2732T1A-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2732T1A-E1-AY?

For technical support, including UPA2732T1A-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2732T1A-E1-AY requirements.

6.How does Aetrix verify that UPA2732T1A-E1-AY is sourced from the original manufacturer or authorized distributors?

All UPA2732T1A-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2732T1A-E1-AY meets industry standards.

7.What is the process for return or replacement of UPA2732T1A-E1-AY?

All UPA2732T1A-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2732T1A-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2732T1A-E1-AY part is unused and in its original packaging.

Return procedure for UPA2732T1A-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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