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Renesas UPA2732T1A-E1-AZ

Part No.:
UPA2732T1A-E1-AZ
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixUPA2732T1A-E1-AZ.pdf
Description:
P-CHANNEL POWER MOSFET
Quantity:
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Payment
Shipping:
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Inventory:85,361

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Product details

Overview

UPA2732T1A-E1-AZ from Renesas Electronics is a P-channel power MOSFET designed for Li-ion battery protection circuits and notebook computer power management. It delivers RDS(on)1 = 3.7 mΩ max at VGS = −10 V / ID = −20 A, supports −30 V VDSS, −40 A DC drain current, and features built-in gate protection diode in an 8-pin HVSON package.

For engineers reviewing the UPA2732T1A-E1-AZ datasheet, UPA2732T1A-E1-AZ pinout, UPA2732T1A-E1-AZ application, or UPA2732T1A-E1-AZ equivalent, key selection criteria include low-voltage gate drive capability (RDS(on)2 = 6.7 mΩ @ VGS = −4.5 V), avalanche energy rating (EAS = 40 mJ), and thermal performance on standard FR-4 PCBs.

Technical Context

This device operates as a synchronous or standalone high-side load switch in battery protection IC subsystems, where fast turn-off (td(off) = 680 ns) and low gate charge (QG = 133 nC) enable efficient switching control. Its body diode exhibits VF(S-D) = 0.85–1.2 V at 40 A and trr = 88 ns, supporting bidirectional current handling in charge/discharge paths.

The MOSFET integrates an internal gate-source ESD protection diode and is characterized for operation up to Tch = 150 °C. Its safe operating area (SOA) is defined for single-pulse conditions up to 10 s with derating above 25 °C ambient, and it meets Standard-grade quality requirements for consumer electronics applications.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS −30 V - Maximum blocking voltage in battery disconnect mode
RDS(on)1 3.7 mΩ max @ VGS = −10 V / ID = −20 A - Enables <100 mW conduction loss at 20 A
RDS(on)2 6.7 mΩ max @ VGS = −4.5 V / ID = −20 A - Supports logic-level gate drive from battery monitor ICs
EAS 40 mJ - Withstands single inductive energy spikes in portable system hot-swap events
Ciss 3280 pF typ - Determines gate drive power requirement and switching speed trade-off
QG 133 nC - Sets minimum gate driver output current needed for <1 µs transition times
Tch max 150 °C - Defines maximum junction temperature for SOA compliance and reliability modeling

Pinout & Package

UPA2732T1A-E1-AZ uses an 8-pin HVSON package (5.0 × 6.0 × 1.0 mm) with exposed drain pad for thermal enhancement. The package is Pb-free and optimized for surface-mount reflow assembly on standard FR-4 PCBs.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source Common source node for internal MOSFET channel; tied to battery negative or system ground reference
4 Gate Control input requiring negative bias relative to source; connects to battery protection IC's high-side driver output
5, 6, 7, 8 Drain High-current output node connected to battery anode or protected load; electrically and thermally linked to exposed pad

Key Features

Feature Design Value
Low RDS(on) at −4.5 V gate drive 6.7 mΩ max enables use with 5 V or lower logic-supplied protection controllers
Built-in gate protection diode ESD-rated structure reduces need for external gate clamping in compact battery packs
Avalanche-rated operation Rated for single-pulse IAS = −20 A and EAS = 40 mJ - supports robustness against inductive kickback
Small HVSON footprint 5.0 × 6.0 mm outline with exposed drain pad improves thermal resistance (Rth(ch-C) = 1.5 °C/W)

Applications

Lithium-ion Battery Protection Notebook Computer Power Switching

Use Scenario: Overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side main switch controlled by dedicated battery management IC (e.g., Renesas UPD78F0730).

Use Value: Low RDS(on)2 ensures minimal voltage drop during discharge while enabling fast fault shutdown via gate control.

Use Scenario: System power rail enable/disable during sleep/wake transitions in ultraportable notebooks.

IC Role / Device Role / Timing Role: Load switch isolating CPU core voltage domain from battery or adapter input.

Use Value: Fast td(off) = 680 ns and low QG allow precise timing alignment with PMIC sequencing signals.

USB-C Power Delivery Input Protection Industrial Portable Test Equipment

Use Scenario: Reverse polarity and overvoltage protection at USB-C PD input stage before buck converter.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET pair with UPA2732T1A-E1-AZ as high-side switch.

Use Value: −30 V VDSS and avalanche rating support transient suppression without external TVS stacking.

Use Scenario: Field-replaceable battery interface in handheld multimeters and oscilloscopes.

IC Role / Device Role / Timing Role: Isolation switch between removable Li-ion pack and main system board.

Use Value: Standard-grade qualification and −55 to +150 °C storage range ensure reliability across extended field deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si2301DDS-T1-GE3 RDS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; no avalanche rating Lower current (<3 A), space-constrained designs where ESD protection suffices Choose only for sub-5 A loads with relaxed SOA and thermal requirements
AO3401A RDS(on) = 52 mΩ @ −4.5 V; TO-236 package; higher Ciss (870 pF) Cost-sensitive consumer devices with moderate switching frequency (<1 MHz) Prefer when layout area allows larger footprint and gate drive strength is limited

Compared with Si2301DDS-T1-GE3 and AO3401A, UPA2732T1A-E1-AZ offers superior conduction efficiency (3.7 mΩ vs. >50 mΩ), higher current capability (−40 A vs. <5 A), and certified avalanche ruggedness - making it uniquely suitable for high-power battery protection where thermal margin and fault robustness are critical.

Availability

UPA2732T1A-E1-AZ is available at Aetrix Electronics and suitable for lithium-ion battery protection, notebook computer power switching, and USB-C power delivery input protection requiring stable component supply and long-term industrial availability.

Supply support for UPA2732T1A-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

UPA2732T1A-E1-AZ belongs to Renesas' legacy power MOSFET product line targeting portable electronics power management, specifically engineered for high-efficiency, high-reliability battery protection and load switching in space- and thermal-constrained environments.

FAQ

What is the maximum continuous drain current rating for UPA2732T1A-E1-AZ?

The UPA2732T1A-E1-AZ has a DC drain current rating of −40 A at TA = 25 °C on a standard glass epoxy board (25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25 °C ambient, and actual usable current depends on PCB copper area, airflow, and thermal interface design. The UPA2732T1A-E1-AZ must not exceed its channel temperature limit of 150 °C under any operating condition.

Does UPA2732T1A-E1-AZ support logic-level gate drive?

Yes, the UPA2732T1A-E1-AZ is specified for RDS(on)2 = 6.7 mΩ maximum at VGS = −4.5 V and ID = −20 A, confirming reliable enhancement-mode operation with common 5 V or 4.5 V logic-supplied gate drivers. This makes the UPA2732T1A-E1-AZ compatible with battery protection ICs that lack dedicated high-side level-shifting outputs.

Is UPA2732T1A-E1-AZ rated for avalanche energy?

Yes, the UPA2732T1A-E1-AZ is fully characterized for unclamped inductive switching with IAS = −20 A and EAS = 40 mJ under defined test conditions (VDD = −15 V, L = 100 μH, RG = 25 Ω, Tch = 25 °C). This rating validates its use in battery disconnect circuits where inductive transients may occur during sudden load removal.

What is the thermal resistance from channel to case for UPA2732T1A-E1-AZ?

The UPA2732T1A-E1-AZ has Rth(ch-C) = 1.5 °C/W, measured from channel to the exposed drain pad. This low value assumes proper soldering of the thermal pad to a minimum 100 mm² copper area on the PCB. The UPA2732T1A-E1-AZ requires adequate thermal land design to maintain Tch ≤ 150 °C under full-load conditions.

Can UPA2732T1A-E1-AZ be used in back-to-back configuration for bidirectional blocking?

Yes, the UPA2732T1A-E1-AZ is commonly deployed in back-to-back P-channel configuration for true bidirectional blocking in battery protection circuits. Its symmetric source/drain structure (when used with matching device) and body diode forward voltage (VF(S-D) = 0.85–1.2 V) support controlled reverse current flow during charging, and the UPA2732T1A-E1-AZ maintains low RDS(on) in both directions when properly biased.

UPA2732T1A-E1-AZ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
*
Package/Case:
-
Packaging:
Bulk
Product Status:
Active
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

UPA2732T1A-E1-AZ FAQ

1.How can I place an order for UPA2732T1A-E1-AZ through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2732T1A-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2732T1A-E1-AZ reliable?

The price and inventory of UPA2732T1A-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2732T1A-E1-AZ is usually 5 days.

3.What payment methods are accepted for UPA2732T1A-E1-AZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2732T1A-E1-AZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2732T1A-E1-AZ?

UPA2732T1A-E1-AZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2732T1A-E1-AZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2732T1A-E1-AZ?

For technical support, including UPA2732T1A-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2732T1A-E1-AZ requirements.

6.How does Aetrix verify that UPA2732T1A-E1-AZ is sourced from the original manufacturer or authorized distributors?

All UPA2732T1A-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2732T1A-E1-AZ meets industry standards.

7.What is the process for return or replacement of UPA2732T1A-E1-AZ?

All UPA2732T1A-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with UPA2732T1A-E1-AZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2732T1A-E1-AZ part is unused and in its original packaging.

Return procedure for UPA2732T1A-E1-AZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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