Renesas UPA2746UT1A-E2-AY
- Part No.:
- UPA2746UT1A-E2-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2746UT1A-E2-AY.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:

- Shipping:

Inventory:6,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
UPA2746UT1A-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency DC/DC converter primary-side switching, featuring 30 V VDSS, 3.0 mΩ RDS(on) at VGS = 10 V / ID = 45 A, and 83 W PT3 at TC = 25°C in an 8-pin HVSON package.
For engineers reviewing the UPA2746UT1A-E2-AY datasheet, UPA2746UT1A-E2-AY pinout, UPA2746UT1A-E2-AY application, or UPA2746UT1A-E2-AY equivalent, key selection criteria include low RDS(on) at 4.5 V gate drive, avalanche energy rating (EAS = 160 mJ), thermal resistance (Rth(ch–C) = 1.5°C/W), and RoHS/halogen-free compliance for compact power stages.
Technical Context
This device implements a trench-gate, silicon-based N-channel MOSFET architecture optimized for synchronous rectification and buck converter high-side switching. It supports pulse operation up to 190 A (ID(pulse)) with controlled turn-on delay (26 ns) and fall time (15 ns), enabling high-frequency (>500 kHz) power conversion.
Its body diode exhibits VF(S–D) = 0.83 V at IF = 45 A and fast reverse recovery (trr = 37 ns, Qrr = 35 nC), reducing switching losses in hard-commutated topologies. The 8-pin HVSON package integrates a thermally enhanced drain-exposed pad for direct PCB heat spreading.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 12 V–24 V input DC/DC stages |
| RDS(on)1 | 3.0 mΩ max @ VGS = 10 V, ID = 45 A - Enables <1.5 W conduction loss at full load |
| RDS(on)2 | 4.5 mΩ max @ VGS = 4.5 V, ID = 23 A - Supports logic-level gate drive in 3.3 V control systems |
| EAS | 160 mJ - Withstands single-pulse inductive energy without failure in unclamped inductive switching |
| Rth(ch–C) | 1.5°C/W - Allows >50 W continuous dissipation with minimal case-to-ambient delta-T under forced airflow |
| QG | 78 nC max @ VGS = 10 V - Determines gate driver current requirement for <100 ns switching transitions |
| tr/tf | 14 ns / 15 ns - Enables efficient operation above 1 MHz with reduced overlap loss |
Pinout & Package
The UPA2746UT1A-E2-AY uses an 8-pin HVSON (6051) surface-mount package with exposed drain thermal pad (5.4 mm × 6.0 mm footprint). Pin 1–3 are internally connected source terminals; pin 4 is gate; pins 5–8 are internally connected drain terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal parallel die; connects to low-side return path and gate driver reference |
| 4 | Gate | Control terminal requiring ≤±20 V drive; low QG enables fast edge rates with modest driver strength |
| 5, 6, 7, 8 | Drain | High-current drain connection with integrated thermal pad; must be soldered to large copper area for Rth(ch–C) performance |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 4.5 mΩ max enables use with standard 5 V or 3.3 V microcontroller GPIOs without level-shifting |
| Thin HVSON package | 1.0 mm max height allows integration into space-constrained DC/DC modules and POL converters |
| Avalanche-rated | Rated for 40 A single-pulse avalanche current and 160 mJ energy-supports robustness in flyback and LLC resonant designs |
| RoHS & halogen-free | Complies with EU RoHS Directive and JEDEC J-STD-609A Class 1 moisture sensitivity (MSL 1) |
Applications
| Server VRM | Industrial PLC Power |
|---|---|
Use Scenario: High-density 12 V input → 0.8–3.3 V output VRMs supplying CPU/GPU cores in rack-mounted servers. IC Role / Device Role / Timing Role: Primary-side high-side switch in multiphase buck converters operating at 500 kHz–1 MHz. Use Value: 3.0 mΩ RDS(on) and 78 nC QG minimize both conduction and switching losses, improving full-load efficiency by ≥1.2% versus comparable 5 mΩ devices. | Use Scenario: 24 V DC industrial power supply feeding programmable logic controller (PLC) I/O modules and fieldbus interfaces. IC Role / Device Role / Timing Role: Synchronous rectifier in isolated forward or active-clamp forward converter secondary side. Use Value: Low 0.83 V body diode forward voltage and 37 ns trr reduce reverse-recovery losses, enabling >94% efficiency at 10 A output. |
| Automotive ADAS Camera | Telecom PoE PD |
Use Scenario: Compact 12 V → 3.3 V point-of-load regulator powering image sensor and ISP in automotive surround-view camera modules. IC Role / Device Role / Timing Role: High-side switch in monolithic or discrete buck converter with tight thermal constraints. Use Value: 1.5°C/W Rth(ch–C) and thin 1.0 mm profile allow direct mounting on sensor PCB with no heatsink, meeting AEC-Q200 pre-compliance thermal targets. | Use Scenario: Powered Device (PD) interface in IEEE 802.3af/at-compliant telecom equipment accepting 44–57 V PoE input. IC Role / Device Role / Timing Role: Hot-swap MOSFET and DC/DC primary switch in integrated PoE interface IC auxiliary power stage. Use Value: ±20 V VGSS and 30 V VDSS safely withstand PoE surge transients while maintaining low RDS(on) for high-power Class 4/5 PDs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 2.8 mΩ @ 10 V but higher QG (105 nC); 5×6 mm SO-8 package | Larger footprint; requires more gate drive power; better for lower-frequency, higher-current designs | Select when board space permits larger package and gate drive capability exceeds 2 A peak |
| IPB033N04LGATMA1 | RDS(on) = 3.3 mΩ @ 10 V; TO-263-3 package; higher Rth(j–c) = 2.0°C/W | Through-hole compatible; less suitable for ultra-thin or high-density layouts | Select when legacy through-hole assembly or higher single-pulse avalanche margin (220 mJ) is prioritized over profile |
Compared with SiR872DP-T1-GE3 and IPB033N04LGATMA1, the UPA2746UT1A-E2-AY delivers optimal balance of low-profile packaging, 4.5 V logic-level compatibility, and 1.5°C/W thermal resistance-making it preferred for space- and thermally constrained 500 kHz–1 MHz DC/DC converters where gate drive headroom is limited.
Availability
UPA2746UT1A-E2-AY is available at Aetrix Electronics and suitable for server VRMs, industrial PLC power supplies, automotive ADAS camera regulators, and telecom PoE PDs requiring stable component supply across multi-year production cycles.
Supply support for UPA2746UT1A-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA2746UT1A-E2-AY belongs to Renesas' μPA series of high-efficiency power MOSFETs engineered specifically for high-frequency, high-density DC/DC conversion in computing and communications equipment.
FAQ
What is the maximum continuous drain current rating for the UPA2746UT1A-E2-AY at 25°C case temperature?
The UPA2746UT1A-E2-AY supports a continuous drain current (ID(DC)) of ±45 A when the case temperature (TC) is maintained at 25°C. This rating assumes proper PCB copper area for thermal conduction and is directly tied to its 83 W total power dissipation (PT3) specification. Derating applies above 25°C per the datasheet's thermal curves.
Does the UPA2746UT1A-E2-AY support logic-level gate drive, and what is its RDS(on) at 4.5 V?
Yes, the UPA2746UT1A-E2-AY is specified for logic-level operation: its RDS(on)2 is guaranteed ≤4.5 mΩ at VGS = 4.5 V and ID = 23 A. This enables direct drive from 3.3 V or 5 V controllers without external level shifters, reducing system component count and layout complexity in compact DC/DC designs.
What is the thermal resistance from channel to case (Rth(ch–C)) for the UPA2746UT1A-E2-AY, and how should it be applied in layout?
The UPA2746UT1A-E2-AY has an Rth(ch–C) of 1.5°C/W, measured from channel junction to the exposed drain pad. To achieve this value, the 5.4 mm × 6.0 mm thermal pad must be fully soldered to ≥4 cm² of inner-layer copper pour connected via ≥8 thermal vias (0.3 mm diameter) to solid ground planes-per the recommended land pattern in the package drawing.
Is the UPA2746UT1A-E2-AY rated for avalanche energy, and what are the test conditions?
Yes, the UPA2746UT1A-E2-AY is avalanche-rated: it guarantees 160 mJ single-pulse avalanche energy (EAS) and 40 A single-pulse avalanche current (IAS). Testing follows JEDEC JESD24-1 conditions: starting Tch = 25°C, VDD = 15 V, L = 100 μH, RG = 25 Ω, and VGS transition from 20 V to 0 V-validating ruggedness in unclamped inductive switching events.
What is the gate charge (QG) of the UPA2746UT1A-E2-AY, and why does it matter for high-frequency operation?
The UPA2746UT1A-E2-AY has a total gate charge (QG) of 78 nC max at VGS = 10 V. This parameter directly determines required gate driver peak current (IDRV ≈ QG × fSW) and switching transition times. At 1 MHz, 78 nC demands ~78 mA average gate current-enabling clean, low-loss edges without excessive driver sizing in high-frequency DC/DC converters.
UPA2746UT1A-E2-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2746UT1A-E2-AY FAQ
1.How can I place an order for UPA2746UT1A-E2-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2746UT1A-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2746UT1A-E2-AY reliable?
The price and inventory of UPA2746UT1A-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2746UT1A-E2-AY is usually 5 days.
3.What payment methods are accepted for UPA2746UT1A-E2-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2746UT1A-E2-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2746UT1A-E2-AY?
UPA2746UT1A-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2746UT1A-E2-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2746UT1A-E2-AY?
For technical support, including UPA2746UT1A-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2746UT1A-E2-AY requirements.
6.How does Aetrix verify that UPA2746UT1A-E2-AY is sourced from the original manufacturer or authorized distributors?
All UPA2746UT1A-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2746UT1A-E2-AY meets industry standards.
7.What is the process for return or replacement of UPA2746UT1A-E2-AY?
All UPA2746UT1A-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2746UT1A-E2-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2746UT1A-E2-AY part is unused and in its original packaging.
Return procedure for UPA2746UT1A-E2-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPA2746UT1A-E2-AY Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

