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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2747UT1A-E1-AY

Name: UPA2747UT1A-E1-AY
Brand: Renesas
SKU: UPA2747UT1A-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2747UT1A-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: UPA2747UT1A-E1-AY.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

UPA2747UT1A-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for high-efficiency DC/DC converter applications, featuring R_DS(on)1 = 4.5 mΩ max at V_GS = 10 V and I_D = 40 A, V_DSS = 30 V, and 83 W total power dissipation at T_C = 25°C in an 8-pin HVSON package with integrated heat spreader.

For engineers reviewing the UPA2747UT1A-E1-AY datasheet, UPA2747UT1A-E1-AY pinout, UPA2747UT1A-E1-AY application, or UPA2747UT1A-E1-AY equivalent, key selection criteria include low gate charge (Q_G = 35–53 nC), avalanche ruggedness (E_AS = 122 mJ), body diode forward voltage (V_F(S-D) = 0.85 V), thermal resistance (R_th(ch-C) = 1.5 °C/W), and RoHS/halogen-free compliance.

Technical Context

This device implements a trench-gate, silicon-based N-channel enhancement-mode MOSFET architecture optimized for synchronous rectification and high-frequency switching in buck converters. Its low R_DS(on) at both 10 V and 4.5 V gate drive enables efficient operation under PWM control with standard logic-level or 5 V microcontroller outputs.

The 8-pin HVSON package features exposed drain pads on pins 5–8 and source terminals on pins 1–3, enabling direct thermal coupling to PCB copper. The integrated body diode supports freewheeling current with t_rr = 32 ns and Q_rr = 27 nC, minimizing switching losses during reverse recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input DC/DC stages and 12 V bus systems.
R_DS(on)1	4.5 mΩ max @ V_GS = 10 V, I_D = 40 A - Enables <1.8 W conduction loss at full load in high-current POL converters.
Q_G	35–53 nC @ V_GS = 10 V - Supports >1 MHz switching with moderate gate driver strength (e.g., TC4427).
E_AS	122 mJ - Withstands single-pulse inductive energy spikes without failure in hard-switched topologies.
R_th(ch-C)	1.5 °C/W - Allows direct thermal path from channel to PCB heatsink, critical for compact 12 V→1 V VRM designs.
V_F(S-D)	0.85 V @ I_F = 40 A - Reduces freewheeling loss versus external Schottky diodes in non-synchronous configurations.
t_r/t_f	10 ns / 10 ns - Fast edge rates minimize overlap loss in synchronous rectifier gate timing.

Pinout & Package

UPA2747UT1A-E1-AY is housed in an 8-pin HVSON (6051) surface-mount package with exposed drain thermal pad (pins 5–8), three-source terminals (pins 1–3), and single-gate terminal (pin 4). The package measures 5.0 × 6.0 × 1.0 mm and is optimized for high-current PCB thermal management via soldered drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node for internal parallel FET cells; must be connected to low-impedance ground plane.
4	Gate	Control input requiring <53 nC charge; gate resistor selection affects dV/dt and EMI in hard-switched layouts.
5, 6, 7, 8	Drain	High-current output node and primary thermal interface; requires ≥200 mm² 2-oz copper pour for 83 W dissipation.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	R_DS(on)2 = 6.8 mΩ max enables use with 5 V logic-level drivers without level-shifting circuitry.
Thin HVSON package	1.0 mm max height allows integration into space-constrained point-of-load modules and ultra-thin power supplies.
Avalanche-rated design	IAS = 35 A and EAS = 122 mJ support robustness against inductive kickback in unregulated flyback or boost converters.
RoHS & halogen-free	Complies with EU RoHS Directive 2011/65/EU and JEDEC JS709B, eliminating brominated flame retardants and lead.
Fast body diode	t_rr = 32 ns and Q_rr = 27 nC reduce reverse-recovery losses compared to standard silicon diodes in quasi-resonant topologies.

Applications

Server VRMs	Industrial DC/DC Modules
Use Scenario: High-density 12 V input → 1 V output voltage regulator modules supplying CPUs and FPGAs in rack-mounted servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz with precise gate timing to replace external Schottky diodes. Use Value: 4.5 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 30 V MOSFETs, improving full-load efficiency from 92% to 94.5%.	Use Scenario: Isolated 48 V to 12 V DC/DC converters in programmable logic controllers and motor drives. IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or half-bridge topologies with 30 V blocking capability. Use Value: 122 mJ avalanche energy rating eliminates need for external snubbers in transient-prone factory floor environments.
Telecom Power Supplies	Automotive Infotainment PMUs
Use Scenario: Intermediate bus converters (48 V → 5 V/3.3 V) in 5G base station remote radio units. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology with tight thermal constraints. Use Value: R_th(ch-C) = 1.5 °C/W enables 40 A continuous current with only 60 °C temperature rise over case, avoiding forced air cooling.	Use Scenario: Low-voltage power management unit supplying display backlight, audio amplifiers, and USB ports in automotive head units. IC Role / Device Role / Timing Role: Load switch controlling 12 V battery-fed rails with controlled inrush and reverse polarity protection. Use Value: Gate threshold of 1.5–2.5 V ensures reliable turn-on with automotive MCU GPIOs while maintaining noise immunity above 0.8 V.

Server VRMs

Industrial DC/DC Modules

Use Scenario: High-density 12 V input → 1 V output voltage regulator modules supplying CPUs and FPGAs in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz–1 MHz with precise gate timing to replace external Schottky diodes.

Use Value: 4.5 mΩ R_DS(on) reduces conduction loss by >40% vs. comparable 30 V MOSFETs, improving full-load efficiency from 92% to 94.5%.

Use Scenario: Isolated 48 V to 12 V DC/DC converters in programmable logic controllers and motor drives.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or half-bridge topologies with 30 V blocking capability.

Use Value: 122 mJ avalanche energy rating eliminates need for external snubbers in transient-prone factory floor environments.

Telecom Power Supplies

Automotive Infotainment PMUs

Use Scenario: Intermediate bus converters (48 V → 5 V/3.3 V) in 5G base station remote radio units.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology with tight thermal constraints.

Use Value: R_th(ch-C) = 1.5 °C/W enables 40 A continuous current with only 60 °C temperature rise over case, avoiding forced air cooling.

Use Scenario: Low-voltage power management unit supplying display backlight, audio amplifiers, and USB ports in automotive head units.

IC Role / Device Role / Timing Role: Load switch controlling 12 V battery-fed rails with controlled inrush and reverse polarity protection.

Use Value: Gate threshold of 1.5–2.5 V ensures reliable turn-on with automotive MCU GPIOs while maintaining noise immunity above 0.8 V.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 3.8 mΩ @ 10 V but larger 5×6 mm PQFN package; higher Q_G = 62 nC.	Requires larger PCB area and stronger gate driver; better suited for lower-frequency, higher-current industrial SMPS.	Select when lower R_DS(on) outweighs size and gate drive constraints.
IRF7470PBF	SO-8 package; R_DS(on) = 5.2 mΩ @ 10 V; no avalanche rating specified; R_th(ch-A) = 62 °C/W.	Limited to ≤10 A continuous due to thermal limitations; unsuitable for sustained 40 A loads without heatsinking.	Select only for prototyping or low-power auxiliary rails where board space permits SO-8 mounting.

Compared with SiR872DP-T1-GE3 and IRF7470PBF, the UPA2747UT1A-E1-AY delivers optimal balance of low-profile packaging, avalanche ruggedness, and gate-drive compatibility for high-frequency, high-current DC/DC converters where thermal density and reliability under transient stress are critical.

Availability

UPA2747UT1A-E1-AY is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC modules, and telecom power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for UPA2747UT1A-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.

The UPA2747UT1A-E1-AY belongs to Renesas' μPA series of high-efficiency power MOSFETs engineered specifically for high-frequency, high-current DC/DC conversion in space- and thermally-constrained applications.

FAQ

What is the maximum continuous drain current for UPA2747UT1A-E1-AY at 100°C case temperature?

The UPA2747UT1A-E1-AY supports ID(DC) = ±40 A at TC = 25°C. At TC = 100°C, derating applies: using the typical derating curve from the datasheet, the maximum continuous drain current drops to approximately ±22 A to maintain Tch ≤ 150°C. This value is confirmed by the Forward Bias Safe Operating Area graph on page 3 of the G20074EJ1V0DS datasheet, where 100°C case intersects the 22 A horizontal line at VDS = 10 V.

Does UPA2747UT1A-E1-AY require a gate resistor for stable operation in a 1 MHz buck converter?

Yes, UPA2747UT1A-E1-AY requires an external gate resistor to control dV/dt and prevent oscillation. With QG = 35–53 nC and typical gate driver output impedance, a 5–10 Ω resistor is recommended to limit peak gate current and damp ringing. The datasheet's switching time test circuit (page 2) uses RG = 10 Ω, confirming this value provides stable td(on)/td(off) and minimal overshoot in high-frequency operation.

Can UPA2747UT1A-E1-AY be used in parallel configurations for higher current handling?

Yes, UPA2747UT1A-E1-AY supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. However, layout symmetry-matched gate trace lengths, identical source/drain copper areas, and shared thermal mass-is essential. The device's low RDS(on) tolerance (3.4–4.5 mΩ) and tight VGS(off) distribution (1.5–2.5 V) further enhance matching reliability across multiple UPA2747UT1A-E1-AY units in parallel.

Is UPA2747UT1A-E1-AY qualified for automotive applications per AEC-Q101?

No, UPA2747UT1A-E1-AY is rated as "Standard" quality per Renesas documentation and is not AEC-Q101 qualified. It is intended for computers, communications equipment, and industrial robots-not automotive safety-critical systems. For automotive use, Renesas offers the RV1S92xx series or other AEC-Q101-certified MOSFETs with extended temperature range and qualification testing.

What is the recommended PCB footprint and thermal pad layout for UPA2747UT1A-E1-AY?

The recommended footprint for UPA2747UT1A-E1-AY follows Renesas' 8-pin HVSON (6051) drawing: 5.15 mm × 6.0 mm land pattern with 0.65 mm pitch, including a solid 4.1 mm × 5.4 mm thermal pad centered under the package. At least eight 0.3 mm vias (filled or capped) should connect the thermal pad to inner-layer 2-oz copper planes to achieve Rth(ch-A) ≤ 35 °C/W in production boards.

UPA2747UT1A-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

UPA2747UT1A-E1-AY FAQ

1.How can I place an order for UPA2747UT1A-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2747UT1A-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2747UT1A-E1-AY reliable?

The price and inventory of UPA2747UT1A-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2747UT1A-E1-AY is usually 5 days.

3.What payment methods are accepted for UPA2747UT1A-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2747UT1A-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2747UT1A-E1-AY?

UPA2747UT1A-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2747UT1A-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2747UT1A-E1-AY?

For technical support, including UPA2747UT1A-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2747UT1A-E1-AY requirements.

6.How does Aetrix verify that UPA2747UT1A-E1-AY is sourced from the original manufacturer or authorized distributors?

All UPA2747UT1A-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2747UT1A-E1-AY meets industry standards.

7.What is the process for return or replacement of UPA2747UT1A-E1-AY?

All UPA2747UT1A-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2747UT1A-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2747UT1A-E1-AY part is unused and in its original packaging.

Return procedure for UPA2747UT1A-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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