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Renesas UPA2754GR-E1-AT
- Part No.:
- UPA2754GR-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2754GR-E1-AT.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:4,799
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Product details
Overview
UPA2754GR-E1-AT from Renesas Electronics is a dual N-channel power MOSFET in Power SOP8 package, rated for 30 V VDSS, 11 A DC drain current per channel, and 14.5 mΩ max RDS(on) at VGS = 4.5 V. It integrates gate-source protection diodes and is engineered for Li-ion battery protection circuits and power management in portable electronics.
For engineers reviewing the UPA2754GR-E1-AT datasheet, UPA2754GR-E1-AT pinout, UPA2754GR-E1-AT application, or UPA2754GR-E1-AT equivalent, key selection criteria include dual-channel low-RDS(on) performance at logic-level gate drive (2.5–4.5 V), avalanche energy rating (12.1 mJ), and surface-mount thermal capability on ceramic substrate.
Technical Context
This device implements two independent N-channel enhancement-mode MOSFETs in a single Power SOP8 package with shared thermal path. Each channel supports ±11 A DC current and withstands 30 V drain-source voltage, with gate threshold voltage ranging 0.5–1.5 V and guaranteed turn-on at VGS ≥ 2.5 V.
Its internal structure includes integrated gate-source ESD protection diodes and a body diode with 0.81–1.2 V forward voltage at 11 A. Switching is characterized by 21 ns turn-on delay, 45 ns rise time, and 75 ns turn-off delay under standard test conditions (VDD = 15 V, RG = 10 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum continuous drain-source blocking voltage; defines safe operating range in battery protection FET stacks. |
| RDS(on)1 | 14.5 mΩ max at VGS = 4.5 V, ID = 5.5 A - Enables low conduction loss in high-current charge/discharge paths. |
| ID(DC) | ±11 A per channel - Supports dual-path 11 A load switching without external parallel devices. |
| Ciss | 1940 pF typ at VDS = 10 V - Determines gate drive strength requirement and impacts switching speed in battery protection IC-controlled gates. |
| EAS | 12.1 mJ - Specifies single-pulse avalanche energy handling; critical for overvoltage transient robustness in battery pack fault events. |
| QG | 25 nC - Total gate charge defining driver IC output current demand during full switching transitions. |
| VF(S-D) | 0.81–1.2 V at IF = 11 A - Forward voltage of integrated body diode; affects reverse-current path efficiency during discharge-phase freewheeling. |
Pinout & Package
UPA2754GR-E1-AT uses the Power SOP8 (also known as PSOP8 or SOP-8L) surface-mount package with exposed drain paddle for thermal dissipation. Dimensions: 6.0 × 4.4 × 1.8 mm (L × W × H), pitch 1.27 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 | Power return node for Channel 1; electrically tied to exposed drain paddle via internal connection in typical layout. |
| 2 | Gate 1 | Control input for Channel 1; requires logic-level compatible drive (≥2.5 V) for full enhancement. |
| 3 | Source 2 | Power return node for Channel 2; isolated from Source 1 internally but often connected externally in battery protection configurations. |
| 4 | Gate 2 | Independent control input for Channel 2; enables separate enable/disable of charge and discharge paths. |
| 5, 6 | Drain 2 | High-side power terminal for Channel 2; bonded to common drain paddle for thermal and current sharing. |
| 7, 8 | Drain 1 | High-side power terminal for Channel 1; shares same exposed copper paddle as Drain 2 for low-inductance, high-current routing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual N-channel configuration | Two fully independent MOSFETs in one package-enables discrete charge/discharge FET implementation without board area penalty. |
| Logic-level gate drive compatibility | RDS(on) specified down to VGS = 2.5 V-directly drivable by battery protection IC outputs without level-shifting circuitry. |
| Built-in gate-source protection diode | ESD-rated G-S clamp per channel-reduces need for external TVS in compact portable designs where space is constrained. |
| Low Ciss and fast switching | 1940 pF Ciss, 21 ns td(on), 75 ns td(off)-minimizes switching losses and improves response time during overcurrent fault detection. |
| Avalanche-rated operation | 11 A IAS, 12.1 mJ EAS-provides ruggedness against inductive kickback and bus transients in battery disconnect applications. |
Applications
| Smartphone Battery Protection | Tablet Power Path Management |
|---|---|
Use Scenario: Real-time monitoring and cutoff of Li-ion cell during overcharge, overdischarge, or short-circuit events. IC Role / Device Role / Timing Role: Dual-channel power switch implementing independent charge and discharge FETs controlled by protection IC. Use Value: 14.5 mΩ RDS(on) at 4.5 V gate drive minimizes voltage drop across FETs, preserving battery runtime and enabling accurate voltage sensing. | Use Scenario: Seamless transition between AC adapter input and battery supply while preventing backfeed and thermal runaway. IC Role / Device Role / Timing Role: High-side load switch managing power path arbitration with fast 75 ns turn-off delay to prevent shoot-through. Use Value: Integrated body diode with 47 ns reverse recovery time supports efficient freewheeling during dynamic load changes without external diode. |
| Wireless Earbud Charging Case | Portable Medical Monitor Power Control |
Use Scenario: Compact, thermally constrained charging case requiring dual-FET isolation for battery charging and device power delivery. IC Role / Device Role / Timing Role: Dual N-channel switch enabling bidirectional current flow control with minimal PCB footprint. Use Value: Power SOP8 package with exposed drain paddle delivers 1.7 W per channel on ceramic substrate-supports sustained 11 A operation within tight thermal envelopes. | Use Scenario: Battery-backed operation of handheld diagnostic equipment requiring fail-safe power gating during low-voltage brownout. IC Role / Device Role / Timing Role: Primary power switch enforcing system shutdown when battery voltage falls below safe threshold. Use Value: Guaranteed turn-on at VGS = 2.5 V ensures reliable activation even as battery depletes to 3.0 V nominal, extending usable runtime. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AOB410L | 30 V VDSS, 12 A ID(DC), 12.5 mΩ RDS(on) at 4.5 V, DFN5x6 package | Higher current rating but no integrated G-S diode; requires external ESD protection | Preferred where higher current headroom and lower RDS(on) justify re-layout for DFN5x6 thermal pad alignment. |
| SI7850DP | 30 V VDSS, 10 A ID(DC), 15.5 mΩ RDS(on) at 4.5 V, PowerPAK SO-8 | Slightly higher RDS(on); identical pinout and gate drive behavior; RoHS-compliant revision | Drop-in replacement for legacy UPA2754GR-E1-AT designs seeking updated environmental compliance without layout change. |
Compared with UPA2754GR-E1-AT, AOB410L offers lower conduction loss and higher current capacity but demands additional ESD protection and board redesign, whereas SI7850DP provides identical functionality and pinout with enhanced environmental compliance-making it the preferred upgrade path for existing Power SOP8 layouts.
Availability
UPA2754GR-E1-AT is available at Aetrix Electronics and suitable for smartphone battery protection, tablet power path management, and wireless earbud charging case designs requiring stable component supply and long-term industrial availability.
Supply support for UPA2754GR-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA2754GR-E1-AT belongs to Renesas' legacy power MOSFET product line, specifically designed for compact, high-reliability battery protection and power management in portable consumer electronics.
FAQ
What is the maximum continuous drain current rating for each channel of the UPA2754GR-E1-AT?
The UPA2754GR-E1-AT is rated for ±11 A DC drain current per channel at TA = 25°C when mounted on a 2000 mm² ceramic substrate. This rating assumes proper thermal management; derating applies above 25°C ambient, with total power dissipation dropping to 1.7 W per unit at elevated temperatures.
Does the UPA2754GR-E1-AT support logic-level gate drive, and what is its minimum functional VGS?
Yes, the UPA2754GR-E1-AT supports logic-level gate drive with guaranteed RDS(on) performance down to VGS = 2.5 V (18.6 mΩ max). Its gate threshold voltage VGS(off) is specified between 0.5 V and 1.5 V, ensuring reliable turn-on with standard 3.3 V or 4.5 V control signals used in battery protection ICs.
Is the UPA2754GR-E1-AT pin-compatible with other Power SOP8 dual N-channel MOSFETs?
The UPA2754GR-E1-AT follows the standard Power SOP8 pinout: Pins 1/3 = Sources, 2/4 = Gates, 5–6/7–8 = Drains. It is mechanically and electrically pin-compatible with SI7850DP and similar dual-N devices in the same package, though gate charge and RDS(on) values differ-always verify drive strength and thermal design margins when substituting.
What is the purpose of the built-in gate-source protection diode in the UPA2754GR-E1-AT?
The built-in gate-source protection diode in the UPA2754GR-E1-AT serves as an ESD clamp, safeguarding the gate oxide from electrostatic discharge up to human-body-model levels. While it reduces reliance on external TVS components, Renesas explicitly states that additional external protection is required if voltages exceeding ±12 V are expected-so the diode complements but does not replace system-level ESD design.
Can the UPA2754GR-E1-AT be used in automotive applications?
The UPA2754GR-E1-AT is classified as a Standard-grade Renesas product, intended for consumer and industrial applications such as smartphones, tablets, and portable medical monitors-not for automotive use. It lacks AEC-Q101 qualification, extended temperature range validation, or automotive-specific reliability testing; Renesas does not authorize its use in vehicles without prior written consent.
UPA2754GR-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2754GR-E1-AT FAQ
1.How can I place an order for UPA2754GR-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2754GR-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2754GR-E1-AT reliable?
The price and inventory of UPA2754GR-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2754GR-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA2754GR-E1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2754GR-E1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2754GR-E1-AT?
UPA2754GR-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2754GR-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2754GR-E1-AT?
For technical support, including UPA2754GR-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2754GR-E1-AT requirements.
6.How does Aetrix verify that UPA2754GR-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA2754GR-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2754GR-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA2754GR-E1-AT?
All UPA2754GR-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2754GR-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2754GR-E1-AT part is unused and in its original packaging.
Return procedure for UPA2754GR-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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