Renesas UPA2764T1A-E2-AY

Overview

UPA2764T1A-E2-AY from Renesas Electronics is an N-channel MOSFET optimized for high-current DC-DC power stages and motor drive half-bridges, featuring 30 V V_DSS, 130 A I_D(DC), and 1.10 mΩ R_DS(on) at V_GS = 10 V and 46 A - enabling efficient 12 V/48 V automotive and industrial power conversion.

For engineers reviewing the UPA2764T1A-E2-AY datasheet, UPA2764T1A-E2-AY pinout, UPA2764T1A-E2-AY application, or UPA2764T1A-E2-AY equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, 83 W power dissipation at T_C = 25°C, HVSON(6051) thermal performance, and avalanche energy rating of 250 mJ.

Technical Context

This device uses a trench-gate silicon process with integrated body diode and is rated for continuous operation up to T_ch = 150°C. Its 1.5 °C/W channel-to-case thermal resistance and 8-pin HVSON(6051) package with exposed drain paddle support high-power density PCB layouts in synchronous buck converters and H-bridge drivers.

Switching parameters are characterized at V_DD = 15 V, I_D = 35 A, and R_G = 10 Ω, delivering t_d(on) = 47 ns, t_r = 160 ns, t_d(off) = 310 ns, and t_f = 320 ns. Total gate charge is 180 nC at V_GS = 10 V and I_D = 70 A, supporting moderate-speed switching with low driver loss.

Key Specifications

Pinout & Package

UPA2764T1A-E2-AY is housed in an 8-pin HVSON(6051) surface-mount package (5.15 mm × 6.0 mm × 1.0 mm max), featuring an exposed drain paddle for thermal conduction and mechanical anchoring. The package conforms to JEDEC MO-263AA and Renesas code PVSN0008DA-A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRL3803PbF and SiR872DP-T1-GE3, UPA2764T1A-E2-AY delivers superior thermal resistance (1.5 °C/W vs. ≥3.0 °C/W), verified 4.5 V operation, and documented avalanche ruggedness - making it preferred for compact, high-reliability 12–48 V power stages where gate drive simplicity and fault tolerance matter.

Availability

UPA2764T1A-E2-AY is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drives, and server VRM power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for UPA2764T1A-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and infrastructure markets.

The UPA2764T1A-E2-AY belongs to Renesas' μPA high-current power MOSFET family, engineered for thermally demanding switching applications in automotive body electronics and industrial power supplies.

FAQ

What is the maximum continuous drain current rating for UPA2764T1A-E2-AY?

The UPA2764T1A-E2-AY is rated for ±130 A DC drain current at T_C = 25°C. This rating assumes proper PCB copper area and thermal management to maintain case temperature within limits. At elevated case temperatures, derating applies per the datasheet's ID(DC) vs. TC curve - e.g., ~90 A at T_C = 100°C. The UPA2764T1A-E2-AY must be mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board or equivalent for this rating.

Does UPA2764T1A-E2-AY support 4.5 V gate drive in production designs?

Yes, UPA2764T1A-E2-AY is explicitly characterized and guaranteed for R_DS(on) ≤ 2.45 mΩ at V_GS = 4.5 V and I_D = 35 A. This makes it suitable for direct drive from 5 V logic outputs without level-shifting. The gate threshold voltage range (1.0–2.5 V) ensures reliable turn-on across process and temperature variations. UPA2764T1A-E2-AY maintains this performance across its full operating temperature range.

What is the thermal resistance from channel to case for UPA2764T1A-E2-AY?

The channel-to-case thermal resistance (R_th(ch-C)) of UPA2764T1A-E2-AY is 1.5 °C/W, measured from junction to the exposed drain paddle. This value enables high-power operation when the drain paddle is soldered to a large copper thermal pad. It is significantly lower than typical SO-8 or DFN packages, allowing UPA2764T1A-E2-AY to dissipate up to 83 W at T_C = 25°C with minimal temperature rise.

Is UPA2764T1A-E2-AY qualified for automotive applications?

UPA2764T1A-E2-AY is manufactured by Renesas Electronics and falls under their "Standard" quality grade, intended for automotive body electronics including lighting, HVAC, and infotainment power supplies. While not AEC-Q101 certified per se, its design targets automotive ambient conditions (−40°C to +125°C case), halogen-free construction, and Pb-free plating align with common automotive sourcing requirements. Always verify qualification status with Renesas for specific vehicle programs before final design-in. UPA2764T1A-E2-AY data sheet specifies T_stg = −55°C to +150°C and T_ch = 150°C.

What is the total gate charge specification for UPA2764T1A-E2-AY?

The total gate charge (Q_G) of UPA2764T1A-E2-AY is 180 nC, measured at V_DD = 15 V, V_GS = 10 V, and I_D = 70 A. This parameter determines the gate driver current needed for fast switching - for example, achieving 100 ns turn-on requires ~1.8 A peak drive. Gate-to-source (Q_GS = 25 nC) and gate-to-drain (Q_GD = 70 nC) charges are also specified, supporting accurate Miller-effect analysis in high dv/dt applications. UPA2764T1A-E2-AY's Q_GD/Q_G ratio of 39% contributes to robustness against spurious turn-on.