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Renesas UPA2780GR-E1-A
- Part No.:
- UPA2780GR-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2780GR-E1-A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:19,848
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Product details
Overview
UPA2780GR-E1-A from Renesas Electronics is an N-channel power MOSFET with integrated Schottky barrier diode in Power SOP8 package, designed for synchronous DC/DC converter topologies. It delivers RDS(on) = 6.2 mΩ (VGS = 10 V, ID = 7 A), Ciss = 1200 pF, and supports ±14 A DC drain current - enabling high-efficiency, compact point-of-load regulation in consumer and industrial power supplies.
For engineers reviewing the UPA2780GR-E1-A datasheet, UPA2780GR-E1-A pinout, UPA2780GR-E1-A application, or UPA2780GR-E1-A equivalent, key selection criteria include its dual-function integration (MOSFET + SBD), low-voltage gate drive capability (RDS(on) = 8.7 mΩ at 4.5 V), thermal performance on ceramic substrate, and suitability for 30 V-class synchronous buck stages.
Technical Context
The UPA2780GR-E1-A integrates a low-RDS(on) N-channel MOSFET and a co-packaged Schottky barrier diode to eliminate external body diode conduction losses in synchronous rectification. Its gate threshold voltage (VGS(off) = 1.0–2.5 V) and strong transconductance support stable switching down to 4.0 V gate drive.
Thermal design is defined by two independent dissipation limits: 2 W for the MOSFET and 1 W for the Schottky diode, both referenced to a 1200 mm² × 2.2 mm ceramic substrate. The device's safe operating area (SOA) is bounded by RDS(on) heating at DC and pulse-width-limited avalanche energy at short durations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for 5 V–12 V input synchronous buck converters |
| RDS(on) @ 10 V | 6.2 mΩ typ. - Enables <1.5 W conduction loss at 7 A continuous output current |
| RDS(on) @ 4.5 V | 8.7 mΩ typ. - Supports efficient operation with 5 V gate drivers or controller-integrated gate drive |
| Ciss | 1200 pF typ. - Low input capacitance reduces gate drive power and improves switching speed |
| QG | 12 nC - Enables fast turn-on with ≤10 Ω gate resistor and sub-50 ns total propagation delay |
| VF(S-D) | 0.45 V typ. @ 1 A - Schottky forward drop minimizes reverse-conduction loss during dead time |
| trr | 31 ns - Ultra-fast recovery prevents cross-conduction and reduces EMI in high-frequency (>500 kHz) designs |
Pinout & Package
UPA2780GR-E1-A uses the Power SOP8 (also known as PSOP8 or "Power Small Outline Package, 8-pin") surface-mount package, measuring 6.0 mm × 4.4 mm × 1.8 mm max, with exposed drain pad for thermal enhancement. The package features gull-wing leads and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (MOSFET & Diode Cathode) | Common source node for both MOSFET channel and integrated Schottky; connects to power ground or low-side return path |
| 4 | Gate | Control terminal for MOSFET channel; requires no external gate protection diode (internal ESD diode provided) |
| 5, 6, 7, 8 | Drain (MOSFET & Diode Anode) | High-current drain node shared by MOSFET and Schottky anode; must be connected to PCB copper pour for thermal management |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Barrier Diode | Eliminates need for discrete sync rectifier diode; reduces BOM count and layout area in buck converters |
| Low RDS(on) at 4.5 V | 8.7 mΩ enables full-load efficiency in 5 V-input systems without level-shifting gate drive circuitry |
| Ultra-low QGD/QG ratio | 6 nC / 12 nC = 0.5 - Reduces Miller-induced switching instability and improves hard-switching robustness |
| Fast reverse recovery (trr) | 31 ns ensures clean commutation in 300–1000 kHz switching applications with minimal shoot-through risk |
| Thermally isolated dual-die structure | Separate 2 W (MOSFET) and 1 W (Schottky) power dissipation ratings allow independent thermal modeling |
Applications
| Server VRM Core Regulator | USB-C PD Adapter Secondary Side |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1.0 V/100 A core supply for CPU/GPU in enterprise servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 500–800 kHz with precise dead-time control. Use Value: Integrated Schottky eliminates body diode conduction loss during dead time, improving full-load efficiency by ~0.8% versus discrete MOSFET+diode solutions. |
Use Scenario: 20 V input, 5–20 V programmable output USB-C Power Delivery adapter with synchronous rectification. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in flyback or active-clamp forward topology; operates with 5 V gate drive from controller. Use Value: RDS(on) = 8.7 mΩ at 4.5 V ensures >94% peak efficiency at 65 W output without gate boosting, reducing component count and cost. |
| Industrial PLC Power Module | Smart Home Gateway DC/DC Stage |
|
Use Scenario: 24 V input, 3.3 V/5 V/12 V multi-rail power for programmable logic controllers with extended temperature operation. IC Role / Device Role / Timing Role: Primary switch in non-isolated buck converter supplying microcontroller and I/O rails; rated for 150 °C junction temperature. Use Value: 150 °C Tj rating and derated SOA up to 100 °C ambient enable reliable operation in sealed, fanless enclosures. |
Use Scenario: Compact 12 V → 3.3 V buck converter powering Wi-Fi 6/Bluetooth SoCs and sensors in space-constrained smart home hubs. IC Role / Device Role / Timing Role: High-frequency (1 MHz) synchronous rectifier where low Ciss (1200 pF) and fast tf (11 ns) minimize switching loss and EMI. Use Value: 1200 pF Ciss reduces gate driver loading, allowing use of low-cost integrated controller gate drivers without external buffer stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET + Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 (Vishay) | 30 V, 16 A, RDS(on) = 5.8 mΩ @ 10 V; no integrated Schottky - requires external diode | Higher current rating but lacks monolithic diode integration; increases board area and parasitic inductance | Choose when higher ID(DC) margin is required and layout allows discrete diode placement |
| DMN3025LSD-13 (Diodes Inc.) | 30 V, 12 A, RDS(on) = 3.0 mΩ @ 10 V; dual-N with common-drain configuration, no integrated diode | Optimized for dual-phase interleaving; lacks Schottky, requiring separate sync rectifier per phase | Prefer for multi-phase designs where gate drive sharing or layout symmetry outweighs diode integration benefit |
Compared with Si7157DP-T1-GE3 and DMN3025LSD-13, the UPA2780GR-E1-A uniquely combines MOSFET and Schottky in one Power SOP8 die, reducing conduction loss in single-phase buck converters without sacrificing thermal performance or gate drive simplicity.
Availability
UPA2780GR-E1-A is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial PLCs, and smart home gateway power supplies requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for UPA2780GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, infrastructure, and IoT applications.
The UPA2780GR-E1-A belongs to Renesas' legacy µPA power MOSFET family, engineered specifically for high-efficiency, space-constrained DC/DC conversion in standard-grade consumer and industrial equipment.
FAQ
What is the maximum continuous drain current rating for the UPA2780GR-E1-A?
The UPA2780GR-E1-A is rated for ±14 A DC drain current under specified thermal conditions - specifically when mounted on a 1200 mm² × 2.2 mm ceramic substrate. This rating assumes TA ≤ 25 °C and accounts for both MOSFET conduction and thermal resistance to ambient (Rth(ch–A) = 62.5 °C/W). At elevated ambient temperatures, derating applies per the datasheet's power vs. temperature curve.
Does the UPA2780GR-E1-A require an external gate protection circuit?
The UPA2780GR-E1-A includes an internal gate-to-source protection diode for ESD suppression, but Renesas explicitly states that an external protection circuit is required if voltages exceeding the ±20 V gate–source rating may occur in the system. Transient overvoltage events - such as those from inductive switching or hot-plug scenarios - necessitate external Zener clamping or RC snubbing to ensure long-term reliability of the UPA2780GR-E1-A.
Can the UPA2780GR-E1-A be used in 4.5 V gate drive applications?
Yes - the UPA2780GR-E1-A is characterized for RDS(on) = 8.7 mΩ (typ.) at VGS = 4.5 V and ID = 7 A, confirming robust enhancement-mode operation at industry-standard 5 V logic levels. Its gate threshold voltage range (1.0–2.5 V) ensures reliable turn-on even with gate driver tolerances or PCB trace drops, making it suitable for direct interfacing with PWM controllers like the RT7290B or MP2315 without level shifting.
What is the role of the integrated Schottky diode in the UPA2780GR-E1-A?
The integrated Schottky barrier diode in the UPA2780GR-E1-A serves as the intrinsic body diode replacement in synchronous rectification. With VF(S-D) = 0.45 V (typ.) and trr = 31 ns, it conducts during the MOSFET's off-state dead time, eliminating the slow, lossy recovery behavior of conventional silicon body diodes. This directly improves light-load efficiency and reduces heat generation in the UPA2780GR-E1-A during discontinuous conduction mode (DCM) operation.
Is the UPA2780GR-E1-A compliant with RoHS and lead-free assembly requirements?
Yes - the UPA2780GR-E1-A is manufactured and shipped as a lead-free, RoHS-compliant device. Its Power SOP8 package uses matte tin plating on gull-wing leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 3 requirements. Reflow profiles must follow Renesas' recommended temperature ramp rates and peak temperature (≤260 °C) to prevent solder joint voiding or package delamination in the UPA2780GR-E1-A.
UPA2780GR-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2780GR-E1-A FAQ
1.How can I place an order for UPA2780GR-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2780GR-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2780GR-E1-A reliable?
The price and inventory of UPA2780GR-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2780GR-E1-A is usually 5 days.
3.What payment methods are accepted for UPA2780GR-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2780GR-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2780GR-E1-A?
UPA2780GR-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2780GR-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2780GR-E1-A?
For technical support, including UPA2780GR-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2780GR-E1-A requirements.
6.How does Aetrix verify that UPA2780GR-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA2780GR-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2780GR-E1-A meets industry standards.
7.What is the process for return or replacement of UPA2780GR-E1-A?
All UPA2780GR-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2780GR-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2780GR-E1-A part is unused and in its original packaging.
Return procedure for UPA2780GR-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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