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Renesas UPA2782GR-E1-A
- Part No.:
- UPA2782GR-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.173", 4.40mm Width)
- Datasheet:
-
UPA2782GR-E1-A.pdf
- Description:
- UPA2782GR-E1-A - SWITCHINGN-CHAN
- Quantity:
- Payment:
- Shipping:
Inventory:7,500
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Product details
Overview
UPA2782GR-E1-A from Renesas Electronics is an N-channel power MOSFET with integrated Schottky barrier diode in Power SOP8 package, designed for synchronous DC/DC converter topologies. It delivers RDS(on) = 11 mΩ (VGS = 10 V, ID = 5.5 A), Ciss = 660 pF, and supports ±11 A DC drain current with 30 V VDSS, enabling high-efficiency buck converter designs in compact power supplies.
For engineers reviewing the UPA2782GR-E1-A datasheet, UPA2782GR-E1-A pinout, UPA2782GR-E1-A application, or UPA2782GR-E1-A equivalent, key selection criteria include its dual-function integration (MOSFET + Schottky), low gate charge (QG = 7.1 nC), thermal performance on ceramic substrate, and suitability for 4.0–10 V gate drive systems in point-of-load converters.
Technical Context
The UPA2782GR-E1-A integrates a discrete N-channel MOSFET and a co-packaged Schottky diode to replace external body-diode recovery paths in synchronous rectification. Its gate threshold voltage (VGS(off) = 1.0–2.5 V) enables logic-level compatibility, while low Ciss/Coss (660 pF / 340 pF) minimizes switching losses at high frequencies up to several hundred kHz.
Designed for unidirectional power flow in step-down converters, it operates with VGS from ±20 V, handles pulsed drain currents up to ±44 A (1% duty cycle), and features built-in gate protection diode. Thermal resistance Rth(ch–A) = 62.5°C/W (MOSFET) and Rth(j–A) = 125°C/W (Schottky) are specified for mounting on 1200 mm² × 2.2 mm ceramic substrate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in buck high-side or low-side switch position |
| RDS(on) @ 10 V | 11 mΩ typ. - Enables <1 W conduction loss at 5.5 A DC in compact layouts |
| Ciss | 660 pF typ. - Reduces gate drive power and improves switching speed control |
| QG | 7.1 nC - Low gate charge allows fast turn-on with minimal driver IC stress |
| IF(AV) | 2.5 A - Schottky diode average forward current rating for freewheeling path |
| tr/tf | 5 ns / 6 ns - Fast edge rates support >500 kHz switching without excessive EMI |
| VF(S-D) | 0.45 V typ. @ 1 A - Low forward drop reduces freewheeling conduction loss vs. silicon body diodes |
Pinout & Package
UPA2782GR-E1-A uses Power SOP8 (also known as PSOP8 or SOP-8L) package: 6.0 mm × 4.4 mm footprint, 1.8 mm max height, gull-wing leads, thermal pad on underside. Pin 1–3 and 5–8 are internally connected to source and drain respectively; pin 4 is gate.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source (MOSFET & Diode Cathode) | Common reference node for both MOSFET channel and Schottky anode; requires low-inductance PCB connection to ground/power return |
| 4 | Gate | Control terminal for MOSFET channel; must be driven with clean, low-impedance signal to minimize ringing and ensure reliable turn-on at ≥4.0 V |
| 5, 6, 7, 8 | Drain (MOSFET & Diode Anode) | High-side switching node; connects to input rail in buck topology and to Schottky cathode via internal bond wire |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky diode | Eliminates need for external freewheeling diode, reducing BOM count and PCB area in synchronous buck stages |
| Low RDS(on) at 4.5 V | 16 mΩ typ. enables efficient operation with 5 V or 3.3 V gate drivers without level-shifting circuitry |
| Low QGD/QGS ratio | QGD = 3.1 nC, QGS = 2.1 nC - Improves Miller immunity and hard-switching robustness |
| Fast reverse recovery (trr) | 25 ns - Minimizes shoot-through risk and switching loss during dead-time transitions |
| Thermally enhanced package | Exposed drain pads on pins 5–8 and thermal pad enable direct heat transfer to PCB copper pour or heatsink |
Applications
| Point-of-Load DC/DC Converter | Laptop CPU Core Voltage Regulator |
|---|---|
Use Scenario: High-current, space-constrained 12 V-to-1.2 V conversion feeding modern microprocessors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switches at 300–600 kHz with precise dead-time control. Use Value: Integrated Schottky reduces conduction loss by ~40% vs. discrete MOSFET+diode solution, improving efficiency at 10–20 A loads. | Use Scenario: Dual-phase 19 V input to 0.8–1.5 V output regulator for mobile Intel/AMD CPUs. IC Role / Device Role / Timing Role: High-side main switch in each phase; driven by dedicated gate driver IC with 10 V gate voltage. Use Value: 11 mΩ RDS(on) limits I²R loss to <0.6 W per phase at 12 A, supporting thermally constrained ultrabook chassis. |
| USB-C PD Portable Charger | Industrial PLC I/O Power Module |
Use Scenario: 20 V input to 5–12 V programmable output using buck architecture with digital controller. IC Role / Device Role / Timing Role: Primary switching element in constant-frequency PWM-controlled stage operating up to 500 kHz. Use Value: Low Ciss and fast tr/tf allow stable loop response and reduced EMI filter size in portable form factor. | Use Scenario: 24 V industrial bus to isolated 5 V/3.3 V auxiliary rails powering digital I/O and communication interfaces. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback or buck-derived isolated converter. Use Value: Schottky VF of 0.45 V ensures >92% efficiency at light loads (100 mA–1 A), critical for always-on monitoring circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET + Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | 30 V VDSS, RDS(on) = 9.5 mΩ @ 10 V, but no integrated Schottky; requires external diode | Higher efficiency possible with optimized external Schottky, but increases layout complexity and BOM count | Select when board space allows separate diode placement and gate drive supports higher QG (12.5 nC) |
| IRF7759TRPBF | 30 V VDSS, RDS(on) = 10.5 mΩ @ 10 V, integrated Schottky, but SO-8 package lacks thermal pad and has higher Rth | Lower thermal performance (Rth(j–A) ≈ 150°C/W) limits continuous current in sealed enclosures | Select only for cost-sensitive, low-power (<5 A) applications where thermal margin is sufficient |
Compared with Si7842DP-T1-GE3 and IRF7759TRPBF, UPA2782GR-E1-A uniquely combines low RDS(on), integrated Schottky, and Power SOP8 thermal design-making it optimal for high-density, thermally constrained synchronous buck converters requiring ≤2.5 A diode current and ≤11 A MOSFET current.
Availability
UPA2782GR-E1-A is available at Aetrix Electronics and suitable for point-of-load DC/DC converters, laptop CPU voltage regulators, and USB-C PD portable chargers requiring stable component supply and long-term industrial availability.
Supply support for UPA2782GR-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and enterprise applications.
The UPA2782GR-E1-A belongs to Renesas' legacy power MOSFET family targeting high-efficiency DC/DC conversion; it was engineered specifically for synchronous rectification in compact, medium-power buck converters where integration and thermal performance are critical.
FAQ
What is the maximum continuous drain current rating for UPA2782GR-E1-A?
The UPA2782GR-E1-A has a DC drain current rating of ±11 A at TA = 25°C when mounted on a 1200 mm² × 2.2 mm ceramic substrate. Derating applies above 25°C ambient; at 75°C, the usable DC current drops to approximately ±7.5 A based on the published derating curve. This rating reflects the MOSFET portion only-the integrated Schottky diode is rated for 2.5 A average forward current.
Does UPA2782GR-E1-A require external gate protection?
Yes, UPA2782GR-E1-A includes an internal gate-to-source protection diode, but Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." Given its ±20 V gate-source rating and sensitivity to ESD, designers must implement series gate resistors (typically 5–22 Ω), TVS clamping, and proper PCB layout practices to prevent gate oxide damage during handling and operation.
Can UPA2782GR-E1-A be used in 3.3 V gate-drive applications?
Yes, UPA2782GR-E1-A is characterized down to VGS = 4.0 V, with RDS(on) = 19 mΩ typ. at 5.5 A. At 3.3 V gate drive, it remains partially enhanced but exhibits significantly higher on-resistance (>35 mΩ estimated), increasing conduction loss. For reliable 3.3 V operation, verify actual RDS(on) and thermal margin under load; use 4.5 V or higher for full specification compliance in UPA2782GR-E1-A designs.
What is the purpose of the integrated Schottky diode in UPA2782GR-E1-A?
The integrated Schottky diode in UPA2782GR-E1-A serves as the intrinsic freewheeling path during the off-state of the MOSFET in synchronous buck converters. It replaces the slower, higher-VF body diode, enabling faster reverse recovery (trr = 25 ns) and lower forward voltage (VF(S-D) = 0.45 V @ 1 A), thereby reducing switching losses and improving light-load efficiency in UPA2782GR-E1-A-based power stages.
Is UPA2782GR-E1-A RoHS compliant?
Yes, UPA2782GR-E1-A complies with the EU RoHS Directive. Renesas confirms environmental compliance in its product documentation and specifies lead-free (Pb-free) packaging for this part. The Power SOP8 package uses matte tin plating, and all homogeneous materials meet RoHS substance restrictions-including cadmium, hexavalent chromium, mercury, PBB, PBDE, and phthalates-as verified through Renesas' material declaration process for UPA2782GR-E1-A.
UPA2782GR-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-SOIC (0.173", 4.40mm Width)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4V, 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.1 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 660 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOP
UPA2782GR-E1-A FAQ
1.How can I place an order for UPA2782GR-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2782GR-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2782GR-E1-A reliable?
The price and inventory of UPA2782GR-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2782GR-E1-A is usually 5 days.
3.What payment methods are accepted for UPA2782GR-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2782GR-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2782GR-E1-A?
UPA2782GR-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2782GR-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2782GR-E1-A?
For technical support, including UPA2782GR-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2782GR-E1-A requirements.
6.How does Aetrix verify that UPA2782GR-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA2782GR-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2782GR-E1-A meets industry standards.
7.What is the process for return or replacement of UPA2782GR-E1-A?
All UPA2782GR-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA2782GR-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2782GR-E1-A part is unused and in its original packaging.
Return procedure for UPA2782GR-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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