Renesas UPA2792GR(0)-E1-AZ
- Part No.:
- UPA2792GR(0)-E1-AZ
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
UPA2792GR(0)-E1-AZ.pdf
- Description:
- SWITCHING N AND P TRANSISTORS
- Quantity:
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- Shipping:

Inventory:10,000
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Product details
Overview
UPA2792GR(0)-E1-AZ from Renesas Electronics is a dual N- and P-channel power MOSFET in Power SOP8 package, designed for half-bridge motor drive circuits. It delivers 30 V/−30 V VDSS, 12.5 mΩ (N-ch) and 18 mΩ (P-ch) RDS(on) at ±10 VGS, ±10 A DC drain current, and integrated gate protection diodes - enabling compact, efficient H-bridge control in brushed DC motor systems.
For engineers reviewing the UPA2792GR(0)-E1-AZ datasheet, UPA2792GR(0)-E1-AZ pinout, UPA2792GR(0)-E1-AZ application, or UPA2792GR(0)-E1-AZ equivalent, key selection criteria include verified bidirectional switching capability, low gate charge (42/47 nC), avalanche-rated operation (10/−10 A IAS), thermal performance on ceramic substrate, and Pb-free Sn-Bi plating compliance.
Technical Context
This dual-channel MOSFET integrates complementary N- and P-channel devices in a single Power SOP8 package to support synchronous half-bridge topologies without external level-shifting. Its matched RDS(on) characteristics (12.5 mΩ N-ch / 18 mΩ P-ch at rated VGS) and symmetrical switching timing (td(on)/td(off) = 9.6/52 ns and 12/130 ns) enable balanced conduction and reduced shoot-through risk in bidirectional motor control.
The device features built-in gate-source ESD protection diodes, 2200 pF input capacitance per channel, and body diodes with VF(S-D) ≤ 1.5 V at 10 A - supporting freewheeling and regenerative braking. Absolute maximum ratings include ±20 V gate-source voltage, 150 °C channel temperature, and 2.0 W total power dissipation for dual-device operation on 2000 mm² ceramic substrate.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V (N-ch), −30 V (P-ch): Supports 24 V nominal motor rails with 20% headroom for inductive kickback. |
| RDS(on) @ VGS = ±10 V | 12.5 mΩ (N), 18 mΩ (P): Enables <1.3 W combined conduction loss at ±5 A continuous load. |
| ID(DC) | ±10 A: Sustains full-load current in compact motor drivers without forced air cooling. |
| QG | 42 nC (N), 47 nC (P): Allows fast switching with standard gate drivers (e.g., TC4427) at ≤1 MHz PWM. |
| Ciss | 2200 pF (both channels): Predictable gate drive requirements; supports stable PWM control up to 200 kHz. |
| Tch max | 150 °C: Permits operation in sealed enclosures with ambient temperatures up to 85 °C using ceramic heatsinking. |
| IAS | ±10 A: Withstands single-pulse inductive energy events (EAS = 10 mJ) during motor stall or abrupt stop. |
Pinout & Package
UPA2792GR(0)-E1-AZ uses the Power SOP8 surface-mount package (6.0 × 4.4 × 1.8 mm), optimized for thermal conduction via exposed drain pads. The dual-channel layout shares common source terminals and independent gate/drain connections to support half-bridge configuration without cross-conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source 1 (N-channel) | Low-side return path; electrically tied to Pin 3 for common-source topology. |
| 2 | Gate 1 (N-channel) | Controls N-MOSFET turn-on; requires ≥4.5 V drive for RDS(on) ≤21 mΩ. |
| 3 | Source 2 (P-channel) | High-side return path; connected internally to Pin 1 for unified source reference. |
| 4 | Gate 2 (P-channel) | Controls P-MOSFET turn-on; driven negative relative to Source 2 (Pin 3). |
| 5, 6 | Drain 2 (P-channel) | High-side output node; connects to motor supply rail in high-side switch applications. |
| 7, 8 | Drain 1 (N-channel) | Low-side output node; ties to motor ground path and carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P pair in single package | Eliminates PCB routing mismatch and enables precise half-bridge timing alignment. |
| Built-in gate protection diode | Provides ESD immunity (HBM >2 kV) without external Zener clamps, reducing BOM count. |
| Low RDS(on) at 4.5 VGS | N-ch: 21 mΩ, P-ch: 26 mΩ - supports logic-level drive from 5 V microcontrollers. |
| Matched Ciss (2200 pF) | Ensures symmetrical gate drive dynamics and minimizes duty-cycle distortion in PWM. |
| Avalanche-rated (IAS = ±10 A) | Guarantees ruggedness against inductive flyback without external snubbers in 24 V motor systems. |
Applications
| Brushed DC Motor Control | Industrial Actuator Driver |
|---|---|
|
Use Scenario: Bidirectional speed and direction control of 12–24 V brushed DC motors in automated valves and linear actuators. IC Role / Device Role / Timing Role: Half-bridge power stage where UPA2792GR(0)-E1-AZ provides synchronized N/P switching with <100 ns dead-time margin. Use Value: Low RDS(on) reduces heat generation in enclosed housings; integrated protection simplifies layout versus discrete FET solutions. |
Use Scenario: Position-hold and torque modulation in servo-driven industrial grippers requiring rapid reversal and stall tolerance. IC Role / Device Role / Timing Role: Power switch delivering ±10 A peak current with controlled diode recovery (trr ≤ 57 ns) to minimize switching losses. Use Value: Avalanche rating (10 mJ) absorbs energy during emergency stops; thermal resistance (62.5 °C/W) sustains 85 °C ambient operation. |
| Automotive HVAC Blower | Home Appliance Fan Driver |
|
Use Scenario: Variable-speed blower motor control in automotive climate systems with battery-supplied 12 V input. IC Role / Device Role / Timing Role: High-efficiency half-bridge switching element operating at 20 kHz PWM with minimal EMI due to matched Ciss. Use Value: Pb-free Sn-Bi plating meets automotive RoHS requirements; −40 to +125 °C operational range covers under-hood conditions. |
Use Scenario: Energy-efficient fan speed regulation in air purifiers and dehumidifiers using 24 V DC input. IC Role / Device Role / Timing Role: Compact motor driver IC replacing discrete MOSFETs and gate resistors in space-constrained PCBs. Use Value: Power SOP8 footprint (6.0 × 4.4 mm) saves >40% board area vs. dual-SO8 solution; 1.7 W single-unit dissipation enables natural convection cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7862DP-T1-GE3 | Higher RDS(on) (20 mΩ N / 30 mΩ P @ 10 V), larger SO-8 package (5.0 × 6.0 mm), no integrated gate protection. | Requires external gate clamp diodes; less suitable for high-reliability motor control where ESD robustness is critical. | Preferred when cost sensitivity outweighs gate protection and thermal performance needs. |
| IRF7341TRPBF | Lower voltage rating (25 V), higher QG (51/54 nC), no avalanche rating, different pinout (non-complementary source arrangement). | Not recommended for 24 V systems with inductive transients; incompatible pin mapping prevents drop-in replacement. | Consider only for low-voltage (<18 V), non-avalanche-critical applications with existing IRF7341 layout. |
Compared with Si7862DP-T1-GE3 and IRF7341TRPBF, UPA2792GR(0)-E1-AZ offers superior avalanche ruggedness, integrated ESD protection, and tighter RDS(on) matching - making it the optimal choice for thermally constrained, reliability-critical motor drive designs where layout simplicity and transient immunity are prioritized.
Availability
UPA2792GR(0)-E1-AZ is available at Aetrix Electronics and suitable for brushed DC motor control, industrial actuator driver, and automotive HVAC blower applications requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for UPA2792GR(0)-E1-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and consumer markets.
The UPA2792GR(0)-E1-AZ belongs to Renesas' legacy μPA power MOSFET family, engineered specifically for compact, high-efficiency motor drive stages in space- and reliability-constrained applications.
FAQ
What is the maximum continuous drain current rating for UPA2792GR(0)-E1-AZ?
The UPA2792GR(0)-E1-AZ supports ±10 A DC drain current per channel under specified thermal conditions: mounted on a 2000 mm² ceramic substrate at TA = 25 °C. Derating applies above 25 °C ambient; at 85 °C, usable current drops to approximately ±6.5 A for reliable long-term operation. This rating is confirmed in the Absolute Maximum Ratings table of the G18592EJ1V0DS datasheet.
Does UPA2792GR(0)-E1-AZ require external gate resistors for safe operation?
UPA2792GR(0)-E1-AZ does not mandate external gate resistors for basic functionality, but they are strongly recommended to control dV/dt and prevent oscillation. Typical values range from 5 Ω to 22 Ω depending on drive strength and layout parasitics. The device's 42/47 nC total gate charge and low Crss (250/410 pF) make it responsive to moderate-strength drivers like the TC4427, and gate resistors help dampen ringing observed during fast switching transitions.
Can UPA2792GR(0)-E1-AZ be used in a full-bridge configuration?
UPA2792GR(0)-E1-AZ is designed for half-bridge use - one device implements the high-side P-channel and low-side N-channel of a single leg. A full-bridge requires two UPA2792GR(0)-E1-AZ units: one for the left leg (OUT1), another for the right leg (OUT2). Its pinout and internal source connection (Pins 1 and 3 tied) preclude direct full-bridge integration in a single package; this architecture ensures optimal thermal and layout symmetry across both legs.
What is the thermal resistance from channel to ambient for UPA2792GR(0)-E1-AZ?
For UPA2792GR(0)-E1-AZ mounted on a 2000 mm² × 1.6 mm ceramic substrate, the transient thermal resistance from channel to ambient (Rth(ch–A)) is 62.5 °C/W for dual-device operation and 73.5 °C/W for single-device operation, as measured per JEDEC JESD51-14. Steady-state RθJA is not specified, but derating curves in the datasheet show 2.0 W total power dissipation at TA = 25 °C, falling to ~1.2 W at TA = 85 °C.
Is UPA2792GR(0)-E1-AZ compliant with RoHS and REACH regulations?
Yes, UPA2792GR(0)-E1-AZ is Pb-free and RoHS-compliant, using Sn-Bi lead plating as stated in the Ordering Information section of the datasheet. It meets EU Directive 2011/65/EU (RoHS 2) and Regulation (EC) No. 1907/2006 (REACH) SVHC thresholds. The "-AZ" suffix explicitly denotes Pb-free plating, and material declarations are available through Renesas' official product environmental reports.
UPA2792GR(0)-E1-AZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Not For New Designs
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
UPA2792GR(0)-E1-AZ FAQ
1.How can I place an order for UPA2792GR(0)-E1-AZ through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2792GR(0)-E1-AZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2792GR(0)-E1-AZ reliable?
The price and inventory of UPA2792GR(0)-E1-AZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2792GR(0)-E1-AZ is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2792GR(0)-E1-AZ?
For technical support, including UPA2792GR(0)-E1-AZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2792GR(0)-E1-AZ requirements.
6.How does Aetrix verify that UPA2792GR(0)-E1-AZ is sourced from the original manufacturer or authorized distributors?
All UPA2792GR(0)-E1-AZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2792GR(0)-E1-AZ meets industry standards.
7.What is the process for return or replacement of UPA2792GR(0)-E1-AZ?
All UPA2792GR(0)-E1-AZ units undergo pre-shipment inspection (PSI). If there is an issue with UPA2792GR(0)-E1-AZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2792GR(0)-E1-AZ part is unused and in its original packaging.
Return procedure for UPA2792GR(0)-E1-AZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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