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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2800T1L-E1-AY

Name: UPA2800T1L-E1-AY
Brand: Renesas
SKU: UPA2800T1L-E1-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2800T1L-E1-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-VDFN Exposed Pad

Datasheet:: UPA2800T1L-E1-AY.pdf

Description:: MOSFET N-CH 30V 17A 8DFN

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Product details

Overview

UPA2800T1L-E1-AY from Renesas Electronics is an N-channel power MOSFET designed for DC/DC converter and power management in portable electronics. It delivers R_DS(on) = 7.3 mΩ max at V_GS = 10 V / I_D = 17 A, supports ±17 A DC drain current, and features a built-in gate protection diode. Its 8-pin HVSON (3.3 × 3.3 mm) package integrates heat spreader capability for compact high-current switching.

For engineers reviewing the UPA2800T1L-E1-AY datasheet, UPA2800T1L-E1-AY pinout, UPA2800T1L-E1-AY application, or UPA2800T1L-E1-AY equivalent, key selection criteria include low-voltage gate drive compatibility (R_DS(on) ≤ 10 mΩ at 4.5 V), avalanche energy rating (E_AS = 28.9 mJ), thermal resistance (R_th(ch–C) = 2.4 °C/W), and RoHS-compliant pure-Sn lead plating.

Technical Context

The UPA2800T1L-E1-AY employs a trench-gate silicon process optimized for low R_DS(on) and fast switching in synchronous buck converters. Its gate threshold voltage (V_GS(off) = 1.0–2.5 V) enables reliable turn-on with 4.5 V logic-level drivers, while the integrated gate protection diode mitigates ESD risk during handling and board assembly.

Thermal design is supported by dual-path dissipation: low channel-to-case resistance (2.4 °C/W) to PCB copper and defined channel-to-ambient derating (83.3 °C/W on 25.4 × 25.4 mm FR-4). Avalanche ruggedness (I_AS = 17 A, E_AS = 28.9 mJ) permits operation under inductive load transients without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Supports input rails up to 24 V DC/DC stages with margin against voltage spikes
R_DS(on)1	7.3 mΩ max @ V_GS = 10 V, I_D = 17 A - Minimizes conduction loss in high-current output stages
R_DS(on)2	10 mΩ max @ V_GS = 4.5 V, I_D = 8.5 A - Enables direct drive from 5 V or 4.5 V microcontroller GPIOs
Q_G	17 nC - Enables efficient 1–2 MHz switching with moderate gate driver strength
E_AS	28.9 mJ - Withstands single-pulse inductive energy without failure in typical buck converter layouts
R_th(ch–C)	2.4 °C/W - Allows >1.5 W continuous dissipation when mounted to 2-layer PCB copper pour
I_D(DC)	±17 A - Rated for sustained output currents in portable device power rails (e.g., CPU core, GPU, display backlight)

Pinout & Package

UPA2800T1L-E1-AY uses an 8-pin HVSON (3.3 mm × 3.3 mm, 0.4 mm pitch) thermally enhanced surface-mount package with exposed drain paddle for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node; electrically tied internally; connects to power ground plane
4	Gate	Control terminal; requires <17 nC charge for full enhancement; protected by internal Zener diode
5, 6, 7, 8	Drain	High-side switch node; connected to exposed metal pad; primary thermal path to PCB

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	10 mΩ max enables use with 5 V logic without level-shifting, reducing BOM count in portable PMICs
Built-in gate protection diode	Zener-based ESD clamp rated per HBM ≥2 kV prevents gate oxide damage during handling and reflow
Thin HVSON package	0.32 mm profile allows stacking under batteries or displays in ultra-thin mobile designs
Avalanche-rated operation	28.9 mJ single-pulse energy rating eliminates need for external avalanche snubbers in most DC/DC topologies
Pb-free and RoHS compliant	Pure Sn plating meets JEDEC J-STD-020 moisture sensitivity level 3 (MSL3) and EU RoHS Directive 2011/65/EU

Applications

Smartphone Power Management	Tablet DC/DC Converter
Use Scenario: High-efficiency buck converter supplying 1.2 V/4 A to application processor core in LTE smartphone. IC Role / Device Role / Timing Role: Synchronous high-side switch in 2 MHz fixed-frequency buck regulator. Use Value: 7.3 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 12 mΩ MOSFETs, extending battery runtime by ~8 minutes per charge cycle.	Use Scenario: Dual-phase 1.8 V/12 A VRM for tablet SoC GPU subsystem. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage. Use Value: 10 mΩ R_DS(on) at 4.5 V gate drive allows direct control from PWM controller's 5 V logic outputs, eliminating gate driver ICs.
Wireless Headphone Charging Circuit	Portable Medical Monitor Power Rail
Use Scenario: 5 V to 3.3 V step-down for Bluetooth audio SoC and sensor hub in true wireless stereo earbuds. IC Role / Device Role / Timing Role: Main switch in compact 1.5 MHz hysteresis-controlled buck converter. Use Value: 0.32 mm HVSON height fits within 4.5 mm total earbud housing stack-up while sustaining 3 A continuous output.	Use Scenario: 12 V to 5 V intermediate rail for ECG front-end analog circuitry and microcontroller in handheld patient monitor. IC Role / Device Role / Timing Role: Primary switching element in isolated flyback auxiliary supply. Use Value: 28.9 mJ avalanche rating ensures robustness against transformer leakage inductance spikes without added clamping components.

Smartphone Power Management

Tablet DC/DC Converter

Use Scenario: High-efficiency buck converter supplying 1.2 V/4 A to application processor core in LTE smartphone.

IC Role / Device Role / Timing Role: Synchronous high-side switch in 2 MHz fixed-frequency buck regulator.

Use Value: 7.3 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 12 mΩ MOSFETs, extending battery runtime by ~8 minutes per charge cycle.

Use Scenario: Dual-phase 1.8 V/12 A VRM for tablet SoC GPU subsystem.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage.

Use Value: 10 mΩ R_DS(on) at 4.5 V gate drive allows direct control from PWM controller's 5 V logic outputs, eliminating gate driver ICs.

Wireless Headphone Charging Circuit

Portable Medical Monitor Power Rail

Use Scenario: 5 V to 3.3 V step-down for Bluetooth audio SoC and sensor hub in true wireless stereo earbuds.

IC Role / Device Role / Timing Role: Main switch in compact 1.5 MHz hysteresis-controlled buck converter.

Use Value: 0.32 mm HVSON height fits within 4.5 mm total earbud housing stack-up while sustaining 3 A continuous output.

Use Scenario: 12 V to 5 V intermediate rail for ECG front-end analog circuitry and microcontroller in handheld patient monitor.

IC Role / Device Role / Timing Role: Primary switching element in isolated flyback auxiliary supply.

Use Value: 28.9 mJ avalanche rating ensures robustness against transformer leakage inductance spikes without added clamping components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS-T1-E3	R_DS(on) = 30 mΩ @ 4.5 V; SOT-23 package; no avalanche rating	Limited to <2 A DC loads; unsuitable for DC/DC primary switches above 1 MHz	Select only for low-current bias rails where size trumps efficiency
AO3400A	R_DS(on) = 14 mΩ @ 4.5 V; same 8-pin TSOP-8 footprint but 0.8 mm height	Higher conduction loss increases thermal stress in 8.5 A+ applications; requires thicker PCB copper	Acceptable drop-in for space-constrained layouts where 14 mΩ loss is tolerable

Compared with Si2302DS-T1-E3 and AO3400A, the UPA2800T1L-E1-AY provides superior R_DS(on) performance at 4.5 V, lower thermal resistance, and verified avalanche capability-making it uniquely suited for high-efficiency, high-reliability portable DC/DC stages where board area and thermal headroom are constrained.

Availability

UPA2800T1L-E1-AY is available at Aetrix Electronics and suitable for smartphone power management, tablet DC/DC converters, and portable medical monitor power rails requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for UPA2800T1L-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer applications.

The UPA2800 series belongs to Renesas' portfolio of low-voltage power MOSFETs engineered specifically for high-efficiency, space-constrained DC/DC conversion in battery-powered portable electronics.

FAQ

What is the maximum continuous drain current rating for UPA2800T1L-E1-AY?

The UPA2800T1L-E1-AY is rated for ±17 A DC drain current at T_A = 25°C with proper PCB thermal management. This rating assumes mounting on a 25.4 mm × 25.4 mm FR-4 board with 0.8 mm thickness and adequate copper pour. Derating applies above 25°C ambient per the datasheet's thermal curves.

Does UPA2800T1L-E1-AY support 4.5 V gate drive in practical applications?

Yes, the UPA2800T1L-E1-AY guarantees R_DS(on) ≤ 10 mΩ at V_GS = 4.5 V and I_D = 8.5 A, making it fully compatible with standard 5 V logic outputs and many PMIC gate drivers. Its V_GS(off) range (1.0–2.5 V) ensures clean turn-on without shoot-through risk in synchronous configurations.

Is UPA2800T1L-E1-AY suitable for avalanche-prone circuits like flyback converters?

Yes, the UPA2800T1L-E1-AY is explicitly characterized for avalanche operation: I_AS = 17 A and E_AS = 28.9 mJ at T_ch = 25°C. These values are measured under standardized conditions (V_DD = 15 V, L = 100 μH, R_G = 25 Ω) and validate its use in inductive switching topologies without external clamping.

What is the thermal resistance from channel to case for UPA2800T1L-E1-AY?

The UPA2800T1L-E1-AY has a channel-to-case (drain) thermal resistance R_th(ch–C) of 2.4 °C/W. This value reflects conduction through the exposed drain paddle into the PCB copper, enabling efficient heat transfer when the package is soldered to a thermal pad with ≥4 vias to inner ground planes.

How does the built-in gate protection diode function in UPA2800T1L-E1-AY?

The built-in gate protection diode in UPA2800T1L-E1-AY is a Zener-type clamp between gate and source, rated to protect against ESD events per HBM ≥2 kV. It limits gate-source voltage to ±20 V, preventing oxide breakdown during handling or transient coupling-but external TVS or RC filtering remains recommended for system-level surge immunity.

UPA2800T1L-E1-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-VDFN Exposed Pad

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 17A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-DFN3333 (3.3x3.3)

UPA2800T1L-E1-AY FAQ

1.How can I place an order for UPA2800T1L-E1-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2800T1L-E1-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2800T1L-E1-AY reliable?

The price and inventory of UPA2800T1L-E1-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2800T1L-E1-AY is usually 5 days.

3.What payment methods are accepted for UPA2800T1L-E1-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2800T1L-E1-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2800T1L-E1-AY?

UPA2800T1L-E1-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2800T1L-E1-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2800T1L-E1-AY?

For technical support, including UPA2800T1L-E1-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2800T1L-E1-AY requirements.

6.How does Aetrix verify that UPA2800T1L-E1-AY is sourced from the original manufacturer or authorized distributors?

All UPA2800T1L-E1-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2800T1L-E1-AY meets industry standards.

7.What is the process for return or replacement of UPA2800T1L-E1-AY?

All UPA2800T1L-E1-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2800T1L-E1-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2800T1L-E1-AY part is unused and in its original packaging.

Return procedure for UPA2800T1L-E1-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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