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Renesas UPA2802T1L-E2-AY

Part No.:
UPA2802T1L-E2-AY
Manufacturer:
Renesas
Category:
FETs, MOSFETs
Package:
8-VDFN Exposed Pad
Datasheet:
AetrixUPA2802T1L-E2-AY.pdf
Description:
MOSFET N-CH 20V 18A 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:189,000

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Product details

Overview

UPA2802T1L-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for DC/DC converter and power management in portable equipment. It delivers RDS(on)1 = 5.8 mΩ max at VGS = 10 V, ID = 18 A; RDS(on)2 = 10 mΩ max at VGS = 4.5 V, ID = 9 A; and features a built-in gate protection diode in an 8-pin HVSON (3.3 × 3.3 mm) package.

For engineers reviewing the UPA2802T1L-E2-AY datasheet, UPA2802T1L-E2-AY pinout, UPA2802T1L-E2-AY application, or UPA2802T1L-E2-AY equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating (EAS = 32.4 mJ), thermal resistance (Rth(ch-C) = 2.4 °C/W), and RoHS-compliant pure Sn lead plating.

Technical Context

This MOSFET employs a trench-gate structure optimized for high-current switching with fast turn-on (td(on) = 14 ns) and turn-off (td(off) = 49 ns) times under 10 Ω gate resistance. Its body diode exhibits VF(S-D) = 0.82–1.2 V at IF = 18 A and trr = 32 ns with 100 A/μs di/dt, supporting synchronous rectification in buck converters.

The device operates within a VDSS = 20 V rating and supports ±72 A pulsed drain current (PW ≤ 10 μs, duty ≤ 1%). Its channel-to-case thermal resistance of 2.4 °C/W enables efficient heat transfer to PCB copper when mounted on FR-4 (25.4 × 25.4 × 0.8 mm), critical for thermally constrained portable designs.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 20 V - Maximum blocking voltage suitable for 12 V input rail DC/DC stages.
RDS(on)1 5.8 mΩ max @ VGS = 10 V, ID = 18 A - Enables <100 mW conduction loss at full load in compact converters.
RDS(on)2 10 mΩ max @ VGS = 4.5 V, ID = 9 A - Ensures robust operation with 5 V or single-cell Li-ion gate drive.
EAS 32.4 mJ - Withstands single-pulse inductive energy during hard-switching or fault events without failure.
QG 16 nC - Low gate charge reduces driver power requirement and improves switching efficiency at >500 kHz.
Rth(ch-C) 2.4 °C/W - Direct thermal path to drain pad allows >1.5 W continuous dissipation with minimal board area.
ID(DC) ±18 A - Rated continuous current supports high-density power stages in space-constrained applications.

Pinout & Package

UPA2802T1L-E2-AY uses an 8-pin HVSON (3.3 × 3.3 mm, 0.65 mm pitch) package with exposed drain paddle for thermal and electrical performance. The package conforms to JEDEC MO-229 standard and features pure Sn lead finish.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3 Source Common source connection for internal parallel FET cells; low-inductance tie to ground plane.
4 Gate Control terminal requiring <16 nC charge; gate protection diode integrated between Gate and Source.
5, 6, 7, 8 Drain High-current output node tied to exposed thermal pad; electrically and thermally coupled to PCB copper.

Key Features

Feature Design Value
Low RDS(on) at 4.5 V 10 mΩ max enables use with 5 V microcontroller GPIO or battery-powered gate drivers without level-shifting.
Built-in gate protection diode ESD protection between gate and source per human-body model (HBM); external TVS still required for system-level surge.
Thin HVSON package 0.32 mm profile minimizes board height-critical for ultra-thin smartphones and wearables.
Avalanche-rated Rated for single-pulse IAS = 18 A and EAS = 32.4 mJ, supporting reliable operation in non-synchronous flyback or boost topologies.
RoHS-compliant Sn plating Pure tin termination ensures compatibility with lead-free reflow profiles and eliminates Pb-related reliability concerns.

Applications

Smartphone PMIC Output Stage USB-C PD Buck Converter

Use Scenario: High-efficiency 3.3 V/2 A output stage in multi-rail smartphone power management IC.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 2 MHz with 4.5 V gate drive from integrated controller.

Use Value: 10 mΩ RDS(on)2 at 4.5 V reduces conduction loss by >35% vs. legacy 15 mΩ MOSFETs, extending battery runtime.

Use Scenario: 9 V to 5 V step-down converter in USB-C power delivery adapters.

IC Role / Device Role / Timing Role: High-side power switch in constant-frequency PWM-controlled buck regulator.

Use Value: 2.4 °C/W Rth(ch-C) enables 1.5 W dissipation on minimal 2-layer PCB copper, eliminating need for heatsinks.

Wireless Earbud Charging Case Portable SSD Power Rail

Use Scenario: 5 V output switch enabling/disabling charging current to TWS earbud battery.

IC Role / Device Role / Timing Role: Load switch controlling power delivery path with fast turn-on (<14 ns) for responsive enable timing.

Use Value: Integrated gate protection diode simplifies layout by removing external ESD components in space-limited charging case PCB.

Use Scenario: 3.3 V LDO bypass switch supplying NVMe controller in portable SSD enclosures.

IC Role / Device Role / Timing Role: Low-loss pass element replacing discrete P-MOSFET + driver in compact form factor.

Use Value: 5.8 mΩ RDS(on)1 at 10 V ensures <60 mW loss at 1 A, maintaining thermal safety inside sealed aluminum enclosure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si2302DS-T1-GE3 RDS(on) = 50 mΩ @ 4.5 V; SOT-23 package; lower current rating (ID = 3.2 A). Suitable only for sub-1 A loads; lacks avalanche rating and thermal performance for DC/DC primary switches. Select only for low-power load switching where size and cost outweigh efficiency and ruggedness requirements.
AO3400 RDS(on) = 28 mΩ @ 4.5 V; same 8-pin SO-8 footprint but larger thermal resistance (Rth(j-a) ≈ 60 °C/W). Requires larger PCB copper area for equivalent thermal performance; not optimized for ultra-thin portable designs. Prefer when existing SO-8 layout exists and 28 mΩ RDS(on) meets efficiency targets at lower cost.

Compared with Si2302DS-T1-GE3 and AO3400, UPA2802T1L-E2-AY provides superior conduction efficiency at 4.5 V gate drive, significantly lower thermal resistance, and guaranteed avalanche capability-making it uniquely suited for high-density, high-reliability portable DC/DC converters.

Availability

UPA2802T1L-E2-AY is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD adapter design, and portable SSD power rail applications requiring stable component supply and long-term manufacturability.

Supply support for UPA2802T1L-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The UPA2802 series belongs to Renesas' portfolio of low-voltage power MOSFETs engineered specifically for high-efficiency, space-constrained DC/DC conversion in battery-powered portable electronics.

FAQ

What is the maximum continuous drain current rating for UPA2802T1L-E2-AY?

The UPA2802T1L-E2-AY is rated for ±18 A DC drain current at TA = 25°C with all terminals connected and mounted on a standard FR-4 board (25.4 × 25.4 × 0.8 mm). Derating applies above 25°C ambient, and actual usable current depends on PCB copper area, airflow, and thermal interface to the drain pad. The UPA2802T1L-E2-AY must be operated within its safe operating area defined by VDS, ID, and pulse width limits.

Does UPA2802T1L-E2-AY have built-in ESD protection?

Yes, the UPA2802T1L-E2-AY integrates a gate-to-source protection diode to guard against electrostatic discharge per human-body model (HBM). However, Renesas explicitly states that this internal diode serves only as a basic protector and that an external protection circuit remains mandatory if voltages exceeding the rated ±20 V gate-to-source limit may occur in the system. The UPA2802T1L-E2-AY datasheet confirms this requirement in the "Remark" section of the Absolute Maximum Ratings table.

What is the thermal resistance from channel to case for UPA2802T1L-E2-AY?

The channel-to-case thermal resistance (Rth(ch-C)) of UPA2802T1L-E2-AY is 2.4 °C/W, measured from the silicon channel to the exposed drain paddle. This value assumes proper soldering of the drain pad to a minimum 25.4 × 25.4 mm copper area on FR-4. The low Rth(ch-C) enables efficient heat transfer directly into the PCB, allowing UPA2802T1L-E2-AY to sustain higher power dissipation than conventional SO-8 or SOT-23 packages under identical conditions.

Can UPA2802T1L-E2-AY be used in avalanche mode?

Yes, UPA2802T1L-E2-AY is fully specified for single-pulse avalanche operation with IAS = 18 A and EAS = 32.4 mJ under defined test conditions (VDD = 10 V, RG = 25 Ω, L = 100 μH, starting Tch = 25°C). This rating permits controlled energy absorption during inductive switching transients, making UPA2802T1L-E2-AY suitable for non-synchronous flyback or boost converters where the body diode conducts during dead time.

What is the gate threshold voltage range for UPA2802T1L-E2-AY?

The gate-to-source cutoff voltage (VGS(off)) of UPA2802T1L-E2-AY is specified from 1.0 V to 2.5 V at VDS = 10 V and ID = 1 mA. This threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining low leakage (IDSS ≤ 10 μA at VDS = 20 V). The UPA2802T1L-E2-AY's typical forward transfer admittance |yfs| of 6 S further confirms strong transconductance across its operating region.

UPA2802T1L-E2-AY Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
8-VDFN Exposed Pad
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 5 V
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN3333 (3.3x3.3)

UPA2802T1L-E2-AY FAQ

1.How can I place an order for UPA2802T1L-E2-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2802T1L-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2802T1L-E2-AY reliable?

The price and inventory of UPA2802T1L-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2802T1L-E2-AY is usually 5 days.

3.What payment methods are accepted for UPA2802T1L-E2-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2802T1L-E2-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2802T1L-E2-AY?

UPA2802T1L-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2802T1L-E2-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2802T1L-E2-AY?

For technical support, including UPA2802T1L-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2802T1L-E2-AY requirements.

6.How does Aetrix verify that UPA2802T1L-E2-AY is sourced from the original manufacturer or authorized distributors?

All UPA2802T1L-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2802T1L-E2-AY meets industry standards.

7.What is the process for return or replacement of UPA2802T1L-E2-AY?

All UPA2802T1L-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2802T1L-E2-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2802T1L-E2-AY part is unused and in its original packaging.

Return procedure for UPA2802T1L-E2-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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