Renesas UPA2802T1L-E2-AY
- Part No.:
- UPA2802T1L-E2-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
UPA2802T1L-E2-AY.pdf
- Description:
- MOSFET N-CH 20V 18A 8DFN
- Quantity:
- Payment:

- Shipping:

Inventory:189,000
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Product details
Overview
UPA2802T1L-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for DC/DC converter and power management in portable equipment. It delivers RDS(on)1 = 5.8 mΩ max at VGS = 10 V, ID = 18 A; RDS(on)2 = 10 mΩ max at VGS = 4.5 V, ID = 9 A; and features a built-in gate protection diode in an 8-pin HVSON (3.3 × 3.3 mm) package.
For engineers reviewing the UPA2802T1L-E2-AY datasheet, UPA2802T1L-E2-AY pinout, UPA2802T1L-E2-AY application, or UPA2802T1L-E2-AY equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, avalanche energy rating (EAS = 32.4 mJ), thermal resistance (Rth(ch-C) = 2.4 °C/W), and RoHS-compliant pure Sn lead plating.
Technical Context
This MOSFET employs a trench-gate structure optimized for high-current switching with fast turn-on (td(on) = 14 ns) and turn-off (td(off) = 49 ns) times under 10 Ω gate resistance. Its body diode exhibits VF(S-D) = 0.82–1.2 V at IF = 18 A and trr = 32 ns with 100 A/μs di/dt, supporting synchronous rectification in buck converters.
The device operates within a VDSS = 20 V rating and supports ±72 A pulsed drain current (PW ≤ 10 μs, duty ≤ 1%). Its channel-to-case thermal resistance of 2.4 °C/W enables efficient heat transfer to PCB copper when mounted on FR-4 (25.4 × 25.4 × 0.8 mm), critical for thermally constrained portable designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 20 V - Maximum blocking voltage suitable for 12 V input rail DC/DC stages. |
| RDS(on)1 | 5.8 mΩ max @ VGS = 10 V, ID = 18 A - Enables <100 mW conduction loss at full load in compact converters. |
| RDS(on)2 | 10 mΩ max @ VGS = 4.5 V, ID = 9 A - Ensures robust operation with 5 V or single-cell Li-ion gate drive. |
| EAS | 32.4 mJ - Withstands single-pulse inductive energy during hard-switching or fault events without failure. |
| QG | 16 nC - Low gate charge reduces driver power requirement and improves switching efficiency at >500 kHz. |
| Rth(ch-C) | 2.4 °C/W - Direct thermal path to drain pad allows >1.5 W continuous dissipation with minimal board area. |
| ID(DC) | ±18 A - Rated continuous current supports high-density power stages in space-constrained applications. |
Pinout & Package
UPA2802T1L-E2-AY uses an 8-pin HVSON (3.3 × 3.3 mm, 0.65 mm pitch) package with exposed drain paddle for thermal and electrical performance. The package conforms to JEDEC MO-229 standard and features pure Sn lead finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source connection for internal parallel FET cells; low-inductance tie to ground plane. |
| 4 | Gate | Control terminal requiring <16 nC charge; gate protection diode integrated between Gate and Source. |
| 5, 6, 7, 8 | Drain | High-current output node tied to exposed thermal pad; electrically and thermally coupled to PCB copper. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5 V | 10 mΩ max enables use with 5 V microcontroller GPIO or battery-powered gate drivers without level-shifting. |
| Built-in gate protection diode | ESD protection between gate and source per human-body model (HBM); external TVS still required for system-level surge. |
| Thin HVSON package | 0.32 mm profile minimizes board height-critical for ultra-thin smartphones and wearables. |
| Avalanche-rated | Rated for single-pulse IAS = 18 A and EAS = 32.4 mJ, supporting reliable operation in non-synchronous flyback or boost topologies. |
| RoHS-compliant Sn plating | Pure tin termination ensures compatibility with lead-free reflow profiles and eliminates Pb-related reliability concerns. |
Applications
| Smartphone PMIC Output Stage | USB-C PD Buck Converter |
|---|---|
|
Use Scenario: High-efficiency 3.3 V/2 A output stage in multi-rail smartphone power management IC. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 2 MHz with 4.5 V gate drive from integrated controller. Use Value: 10 mΩ RDS(on)2 at 4.5 V reduces conduction loss by >35% vs. legacy 15 mΩ MOSFETs, extending battery runtime. |
Use Scenario: 9 V to 5 V step-down converter in USB-C power delivery adapters. IC Role / Device Role / Timing Role: High-side power switch in constant-frequency PWM-controlled buck regulator. Use Value: 2.4 °C/W Rth(ch-C) enables 1.5 W dissipation on minimal 2-layer PCB copper, eliminating need for heatsinks. |
| Wireless Earbud Charging Case | Portable SSD Power Rail |
|
Use Scenario: 5 V output switch enabling/disabling charging current to TWS earbud battery. IC Role / Device Role / Timing Role: Load switch controlling power delivery path with fast turn-on (<14 ns) for responsive enable timing. Use Value: Integrated gate protection diode simplifies layout by removing external ESD components in space-limited charging case PCB. |
Use Scenario: 3.3 V LDO bypass switch supplying NVMe controller in portable SSD enclosures. IC Role / Device Role / Timing Role: Low-loss pass element replacing discrete P-MOSFET + driver in compact form factor. Use Value: 5.8 mΩ RDS(on)1 at 10 V ensures <60 mW loss at 1 A, maintaining thermal safety inside sealed aluminum enclosure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS-T1-GE3 | RDS(on) = 50 mΩ @ 4.5 V; SOT-23 package; lower current rating (ID = 3.2 A). | Suitable only for sub-1 A loads; lacks avalanche rating and thermal performance for DC/DC primary switches. | Select only for low-power load switching where size and cost outweigh efficiency and ruggedness requirements. |
| AO3400 | RDS(on) = 28 mΩ @ 4.5 V; same 8-pin SO-8 footprint but larger thermal resistance (Rth(j-a) ≈ 60 °C/W). | Requires larger PCB copper area for equivalent thermal performance; not optimized for ultra-thin portable designs. | Prefer when existing SO-8 layout exists and 28 mΩ RDS(on) meets efficiency targets at lower cost. |
Compared with Si2302DS-T1-GE3 and AO3400, UPA2802T1L-E2-AY provides superior conduction efficiency at 4.5 V gate drive, significantly lower thermal resistance, and guaranteed avalanche capability-making it uniquely suited for high-density, high-reliability portable DC/DC converters.
Availability
UPA2802T1L-E2-AY is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD adapter design, and portable SSD power rail applications requiring stable component supply and long-term manufacturability.
Supply support for UPA2802T1L-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.
The UPA2802 series belongs to Renesas' portfolio of low-voltage power MOSFETs engineered specifically for high-efficiency, space-constrained DC/DC conversion in battery-powered portable electronics.
FAQ
What is the maximum continuous drain current rating for UPA2802T1L-E2-AY?
The UPA2802T1L-E2-AY is rated for ±18 A DC drain current at TA = 25°C with all terminals connected and mounted on a standard FR-4 board (25.4 × 25.4 × 0.8 mm). Derating applies above 25°C ambient, and actual usable current depends on PCB copper area, airflow, and thermal interface to the drain pad. The UPA2802T1L-E2-AY must be operated within its safe operating area defined by VDS, ID, and pulse width limits.
Does UPA2802T1L-E2-AY have built-in ESD protection?
Yes, the UPA2802T1L-E2-AY integrates a gate-to-source protection diode to guard against electrostatic discharge per human-body model (HBM). However, Renesas explicitly states that this internal diode serves only as a basic protector and that an external protection circuit remains mandatory if voltages exceeding the rated ±20 V gate-to-source limit may occur in the system. The UPA2802T1L-E2-AY datasheet confirms this requirement in the "Remark" section of the Absolute Maximum Ratings table.
What is the thermal resistance from channel to case for UPA2802T1L-E2-AY?
The channel-to-case thermal resistance (Rth(ch-C)) of UPA2802T1L-E2-AY is 2.4 °C/W, measured from the silicon channel to the exposed drain paddle. This value assumes proper soldering of the drain pad to a minimum 25.4 × 25.4 mm copper area on FR-4. The low Rth(ch-C) enables efficient heat transfer directly into the PCB, allowing UPA2802T1L-E2-AY to sustain higher power dissipation than conventional SO-8 or SOT-23 packages under identical conditions.
Can UPA2802T1L-E2-AY be used in avalanche mode?
Yes, UPA2802T1L-E2-AY is fully specified for single-pulse avalanche operation with IAS = 18 A and EAS = 32.4 mJ under defined test conditions (VDD = 10 V, RG = 25 Ω, L = 100 μH, starting Tch = 25°C). This rating permits controlled energy absorption during inductive switching transients, making UPA2802T1L-E2-AY suitable for non-synchronous flyback or boost converters where the body diode conducts during dead time.
What is the gate threshold voltage range for UPA2802T1L-E2-AY?
The gate-to-source cutoff voltage (VGS(off)) of UPA2802T1L-E2-AY is specified from 1.0 V to 2.5 V at VDS = 10 V and ID = 1 mA. This threshold range ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers while maintaining low leakage (IDSS ≤ 10 μA at VDS = 20 V). The UPA2802T1L-E2-AY's typical forward transfer admittance |yfs| of 6 S further confirms strong transconductance across its operating region.
UPA2802T1L-E2-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 5.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1800 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN3333 (3.3x3.3)
UPA2802T1L-E2-AY FAQ
1.How can I place an order for UPA2802T1L-E2-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2802T1L-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2802T1L-E2-AY reliable?
The price and inventory of UPA2802T1L-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2802T1L-E2-AY is usually 5 days.
3.What payment methods are accepted for UPA2802T1L-E2-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2802T1L-E2-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2802T1L-E2-AY?
UPA2802T1L-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2802T1L-E2-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2802T1L-E2-AY?
For technical support, including UPA2802T1L-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2802T1L-E2-AY requirements.
6.How does Aetrix verify that UPA2802T1L-E2-AY is sourced from the original manufacturer or authorized distributors?
All UPA2802T1L-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2802T1L-E2-AY meets industry standards.
7.What is the process for return or replacement of UPA2802T1L-E2-AY?
All UPA2802T1L-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2802T1L-E2-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2802T1L-E2-AY part is unused and in its original packaging.
Return procedure for UPA2802T1L-E2-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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