Renesas UPA2803T1L-E2-AY

Overview

UPA2803T1L-E2-AY from Renesas Electronics is an N-channel power MOSFET designed for DC/DC converter and power management in portable equipment. It delivers R_DS(on)1 = 5.8 mΩ max at V_GS = 4.5 V and I_D = 20 A, supports ±20 A DC drain current, and features a built-in gate protection diode in an 8-pin HVSON (3.3 × 3.3 mm) package.

For engineers reviewing the UPA2803T1L-E2-AY datasheet, UPA2803T1L-E2-AY pinout, UPA2803T1L-E2-AY application, or UPA2803T1L-E2-AY equivalent, key selection criteria include low on-resistance at 2.5 V gate drive, avalanche energy rating of 40 mJ, thermal resistance R_th(ch-C) = 2.4 °C/W, and RoHS-compliant pure Sn lead plating.

Technical Context

This MOSFET employs a trench-gate structure optimized for high-current switching with minimal conduction loss. Its dual R_DS(on) specs-5.8 mΩ at 4.5 V and 9.5 mΩ at 2.5 V-enable efficient operation across battery-voltage ranges typical in portable systems. The integrated gate protection diode guards against ESD but requires external overvoltage protection in final designs.

Thermal performance is defined by R_th(ch-C) = 2.4 °C/W to the drain pad and R_th(ch-A) = 83.3 °C/W on FR-4 (25.4 × 25.4 × 0.8 mm), supporting high-power-density layouts. Avalanche capability is characterized with I_AS = 20 A and E_AS = 40 mJ under specified test conditions (V_DD = 10 V, L = 100 μH, R_G = 25 Ω).

Key Specifications

Pinout & Package

UPA2803T1L-E2-AY uses an 8-pin HVSON (3.3 mm × 3.3 mm, 0.65 mm pitch) package with exposed drain pad for thermal dissipation. Pin numbering follows standard top-view orientation: pins 1–3 = Source, pin 4 = Gate, pins 5–8 = Drain (common to internal die and thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with Si2302DS-T1-GE3 and AO3400A, UPA2803T1L-E2-AY uniquely combines 20 A DC current capability, sub-10 mΩ on-resistance at 2.5 V, and 40 mJ avalanche energy in a 3.3 mm × 3.3 mm footprint-enabling single-device solutions in high-density portable power stages where thermal headroom and transient robustness are critical.

Availability

UPA2803T1L-E2-AY is available at Aetrix Electronics and suitable for mobile phone power management, USB-C PD buck converters, portable SSD power rails, and wireless earbud charger ICs requiring stable component supply and long-term industrial availability.

Supply support for UPA2803T1L-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC products for automotive, industrial, infrastructure, and IoT applications.

The UPA2803 series belongs to Renesas' portfolio of low-voltage power MOSFETs engineered specifically for high-efficiency, space-constrained DC/DC conversion in battery-powered consumer electronics.

FAQ

What is the maximum continuous drain current rating for UPA2803T1L-E2-AY?

The UPA2803T1L-E2-AY is rated for ±20 A DC drain current at T_A = 25°C with proper PCB thermal design (FR-4, 25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25°C ambient; at 70°C case temperature, usable current drops to approximately 12 A based on its R_th(ch-A) = 83.3 °C/W and P_T1 = 1.5 W limit. Always verify thermal margin using actual board layout and airflow conditions before finalizing the UPA2803T1L-E2-AY design-in.

Does UPA2803T1L-E2-AY support logic-level gate drive?

Yes, the UPA2803T1L-E2-AY is explicitly characterized for logic-level operation: R_DS(on)2 = 9.5 mΩ max at V_GS = 2.5 V and I_D = 10 A, making it compatible with 2.5 V–3.3 V GPIOs and battery voltages down to 2.5 V. This eliminates the need for gate drivers or level shifters in many portable applications, simplifying circuit design and reducing bill-of-materials cost for the UPA2803T1L-E2-AY implementation.

What is the purpose of the built-in gate protection diode in UPA2803T1L-E2-AY?

The built-in gate-to-source diode in the UPA2803T1L-E2-AY provides ESD protection per JESD22-A114 (≥2 kV HBM), safeguarding the gate oxide during handling and assembly. However, Renesas explicitly states that this diode alone is insufficient for system-level overvoltage events; external clamping (e.g., Zener or TVS) remains mandatory if the UPA2803T1L-E2-AY may experience gate voltage excursions beyond ±12 V in end-equipment operation.

Can UPA2803T1L-E2-AY be used in avalanche mode repeatedly?

No-UPA2803T1L-E2-AY is rated for single-pulse avalanche only (I_AS = 20 A, E_AS = 40 mJ), not repetitive avalanche. The datasheet specifies test conditions including starting channel temperature of 25°C and fixed inductive load (L = 100 μH). Repeated avalanche stress degrades device reliability and is outside the guaranteed specification. For topologies requiring repetitive inductive switching (e.g., flyback snubbers), derating or alternate devices with repetitive avalanche rating should be considered instead of UPA2803T1L-E2-AY.

What is the thermal resistance from channel to case (R_th(ch-C)) for UPA2803T1L-E2-AY, and how is it used?

The UPA2803T1L-E2-AY has R_th(ch-C) = 2.4 °C/W, measured from channel junction to the exposed drain pad. This value is used to calculate junction temperature rise above the drain pad temperature: T_j = T_drain + (P_diss × 2.4). Since the drain pad is soldered directly to PCB copper, T_drain approximates the local board temperature-making R_th(ch-C) far more design-relevant than R_th(ch-A) for high-power density layouts using the UPA2803T1L-E2-AY.