Renesas UPA2810T1L-E2-AY
- Part No.:
- UPA2810T1L-E2-AY
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
UPA2810T1L-E2-AY.pdf
- Description:
- MOSFET P-CH 30V 13A 8DFN
- Quantity:
- Payment:

- Shipping:

Inventory:75,000
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Product details
Overview
UPA2810T1L-E2-AY from Renesas Electronics is a P-channel power MOSFET designed for DC/DC converter and power management in portable electronics. It features RDS(on) = 12 mΩ max at VGS = −10 V, ID = −13 A; VDSS = −30 V; and an 8-pin HVSON (3.3 × 3.3 mm) package with integrated gate protection diode.
For engineers reviewing the UPA2810T1L-E2-AY datasheet, UPA2810T1L-E2-AY pinout, UPA2810T1L-E2-AY application, or UPA2810T1L-E2-AY equivalent, key selection criteria include low RDS(on) at −4.5 V gate drive, avalanche energy rating (EAS = 16.9 mJ), thermal resistance (Rth(ch-C) = 2.4 °C/W), and RoHS-compliant pure Sn plating.
Technical Context
This device operates as a synchronous rectifier or high-side switch in buck converters and battery protection circuits. Its gate threshold voltage (VGS(off) = −1.0 to −2.5 V) ensures reliable turn-on with standard logic-level controllers, while built-in gate-source ESD protection diode supports robust handling in portable assembly lines.
The MOSFET's thin HVSON package integrates a heat spreader directly to the drain terminals (pins 5–8), enabling efficient conduction cooling on FR-4 PCBs. Transient thermal impedance data confirms suitability for pulsed loads up to 78 A (ID(pulse)), with safe operating area limited by RDS(on) at high current and power dissipation at elevated ambient temperatures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - Supports input rails up to 24 V DC/DC stages with margin against transients. |
| RDS(on)1 | 12 mΩ max @ VGS = −10 V, ID = −13 A - Enables <150 mW conduction loss at full rated DC current. |
| RDS(on)2 | 23 mΩ max @ VGS = −4.5 V, ID = −6.5 A - Compatible with 5 V or single-cell Li-ion gate drivers without level shifters. |
| EAS | 16.9 mJ - Withstands single inductive switching events (e.g., load dump, hot-swap) without failure. |
| Rth(ch-C) | 2.4 °C/W - Allows direct thermal coupling to copper pour or heatsink via exposed drain pad (pins 5–8). |
| QG | 40 nC - Determines gate driver current requirement (~2 mA avg. for 200 ns switching at 50 kHz). |
| Ciss | 1860 pF - Impacts gate drive loop stability and EMI filtering design in high-frequency converters. |
Pinout & Package
UPA2810T1L-E2-AY uses an 8-pin HVSON (3.3 mm × 3.3 mm, 0.65 mm pitch) package with exposed drain thermal pad. The package is RoHS-compliant with pure Sn lead plating and optimized for automated SMT assembly on 0.8 mm FR-4 boards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node; connects to output rail or ground return path in high-side configuration. |
| 4 | Gate | Control input; requires negative bias relative to source to turn on; protected by internal Zener diode. |
| 5, 6, 7, 8 | Drain | Power input node and primary thermal path; all four pins tied internally to exposed metal pad for low Rth(ch-C). |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at −4.5 V | 23 mΩ max enables use with 5 V microcontrollers or battery-powered gate drivers without boost circuitry. |
| Built-in gate protection diode | Integrated Zener between gate and source clamps ESD events to ±20 V, reducing external TVS count in compact layouts. |
| Thin HVSON thermal package | 0.32 mm profile and exposed drain pad deliver 2.4 °C/W channel-to-case resistance for space-constrained portable designs. |
| Avalanche-rated operation | Rated for single-pulse IAS = −13 A and EAS = 16.9 mJ, supporting unclamped inductive switching in protection circuits. |
Applications
| Portable DC/DC Converter | Battery Protection Circuit |
|---|---|
Use Scenario: Step-down conversion in smartphones and tablets using 3.0–4.2 V Li-ion battery input to generate 1.2 V core supply. IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter topology, switching at 1–3 MHz. Use Value: Low RDS(on)2 (23 mΩ @ −4.5 V) minimizes conduction loss during light-load burst mode, extending battery runtime. | Use Scenario: Overcurrent and short-circuit protection in USB-C power banks with dual-cell series configuration. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent blocking switch placed between battery pack and system load. Use Value: Avalanche energy rating (16.9 mJ) absorbs fault energy during sudden short events, preventing catastrophic failure. |
| Load Switch for SSDs | Hot-Swap Controller for IoT Sensors |
Use Scenario: Controlled power-up of M.2 NVMe SSD modules in ultra-thin laptops to limit inrush current. IC Role / Device Role / Timing Role: High-side load switch activated by PMIC enable signal; handles steady-state 5 A load. Use Value: RDS(on)1 = 12 mΩ ensures <300 mW steady-state loss at full current, compatible with passive thermal design. | Use Scenario: Power sequencing and fault isolation for multi-node wireless sensor nodes powered by coin-cell batteries. IC Role / Device Role / Timing Role: Always-on low-quiescent switch enabling rapid disconnect (<100 ns) upon fault detection. Use Value: Fast turn-off delay (td(off) = 160 ns) and low QG (40 nC) support microsecond-level fault response without external drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; no avalanche rating. | Limited to low-current (<2 A), non-fault-tolerant loads like LED biasing. | Select only when board space is critical and fault energy is negligible. |
| AO3401A | RDS(on) = 44 mΩ @ −4.5 V; SO-8 package; EAS = 12 mJ (lower than UPA2810T1L-E2-AY). | Suitable for mid-power DC/DC but less robust in high-energy fault conditions. | Prefer when cost sensitivity outweighs need for 16.9 mJ avalanche margin. |
Compared with Si2301DDS-T1-GE3 and AO3401A, the UPA2810T1L-E2-AY delivers superior conduction efficiency at −4.5 V, higher avalanche ruggedness, and a thermally enhanced HVSON package-making it optimal for portable power stages where reliability and thermal headroom are prioritized over minimal footprint.
Availability
UPA2810T1L-E2-AY is available at Aetrix Electronics and suitable for portable DC/DC converters, battery protection circuits, and high-side load switches requiring stable component supply across consumer electronics production cycles.
Supply support for UPA2810T1L-E2-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, and power devices.
The UPA2810 series belongs to Renesas' power MOSFET product line, engineered specifically for high-efficiency, space-constrained power management in battery-powered portable equipment.
FAQ
What is the maximum continuous drain current for UPA2810T1L-E2-AY at 25°C ambient?
The UPA2810T1L-E2-AY supports a maximum continuous drain current (ID(DC)) of −13 A at TA = 25°C when mounted on a 25.4 mm × 25.4 mm × 0.8 mm FR-4 board. Derating applies above 25°C per the datasheet's derating curve; at 70°C ambient, the usable DC current drops to approximately −8.5 A due to thermal limits.
Does UPA2810T1L-E2-AY require an external gate resistor for typical DC/DC converter operation?
The UPA2810T1L-E2-AY does not mandate an external gate resistor for basic operation, but a small series resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate-drain capacitance (Crss = 300 pF) and prevent shoot-through in synchronous buck topologies. Gate charge (QG = 40 nC) determines required driver strength-not fixed resistor value.
Can UPA2810T1L-E2-AY be used in a high-side switch configuration with 0 V to −5 V gate control?
Yes, the UPA2810T1L-E2-AY is designed for high-side P-channel operation and turns on fully with VGS ≤ −4.5 V. A 0 V to −5 V gate swing (relative to source) meets its RDS(on)2 specification and avoids exceeding the ±20 V gate-source rating. Ensure source node is referenced correctly-no level-shifting circuitry is needed for this voltage range.
Is the UPA2810T1L-E2-AY compliant with RoHS and REACH regulations?
Yes, the UPA2810T1L-E2-AY is RoHS-compliant with pure Sn lead plating and contains no lead in external electrodes. It also meets REACH SVHC requirements as confirmed in Renesas' material declarations. The "-E2" suffix explicitly denotes Pb-free packaging, and the device carries full compliance documentation under Renesas' environmental policy.
What is the thermal resistance from channel to ambient (Rth(ch-A)) for UPA2810T1L-E2-AY under standard mounting conditions?
The channel-to-ambient thermal resistance (Rth(ch-A)) for UPA2810T1L-E2-AY is 83.3 °C/W when mounted on a 25.4 mm × 25.4 mm × 0.8 mm FR-4 board with standard copper coverage. This value assumes no additional heatsinking; adding thermal vias under the drain pad or using thicker copper can reduce effective Rth(ch-A) by 20–40%.
UPA2810T1L-E2-AY Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 1860 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN3333 (3.3x3.3)
UPA2810T1L-E2-AY FAQ
1.How can I place an order for UPA2810T1L-E2-AY through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2810T1L-E2-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2810T1L-E2-AY reliable?
The price and inventory of UPA2810T1L-E2-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2810T1L-E2-AY is usually 5 days.
3.What payment methods are accepted for UPA2810T1L-E2-AY?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2810T1L-E2-AY transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2810T1L-E2-AY?
UPA2810T1L-E2-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2810T1L-E2-AY order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2810T1L-E2-AY?
For technical support, including UPA2810T1L-E2-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2810T1L-E2-AY requirements.
6.How does Aetrix verify that UPA2810T1L-E2-AY is sourced from the original manufacturer or authorized distributors?
All UPA2810T1L-E2-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2810T1L-E2-AY meets industry standards.
7.What is the process for return or replacement of UPA2810T1L-E2-AY?
All UPA2810T1L-E2-AY units undergo pre-shipment inspection (PSI). If there is an issue with UPA2810T1L-E2-AY, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2810T1L-E2-AY part is unused and in its original packaging.
Return procedure for UPA2810T1L-E2-AY:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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