Renesas UPA2811T1L-E1-AY

Overview

UPA2811T1L-E1-AY from Renesas Electronics is a P-channel MOSFET designed for high-efficiency DC/DC converter and power management circuits in portable electronics. It features −30 V drain-to-source voltage rating, 15 mΩ maximum R_DS(on) at V_GS = −10 V / I_D = −19 A, 4.5 V gate-drive compatibility, built-in gate protection diode, and 8-pin HVSON (3.3 × 3.3 mm) thermal-enhanced package.

For engineers reviewing the UPA2811T1L-E1-AY datasheet, UPA2811T1L-E1-AY pinout, UPA2811T1L-E1-AY application, or UPA2811T1L-E1-AY equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, avalanche energy rating (36 mJ), channel-to-case thermal resistance (2.4 °C/W), and integrated gate protection for robustness in battery-powered buck converters and load switches.

Technical Context

This device operates as a synchronous rectifier or high-side switch in step-down regulators, leveraging its low on-resistance and fast switching (t_d(off) = 100 ns, t_f = 70 ns) to minimize conduction and transition losses. Its −2.5 V typical gate threshold (V_GS(off)) ensures reliable turn-off under partial gate drive conditions.

The integrated gate protection diode guards against ESD events, while the 8-pin HVSON package uses exposed drain pads (pins 5–8) and triple-source configuration (pins 1–3) to optimize current handling and thermal dissipation-critical for compact, thermally constrained portable designs.

Key Specifications

Pinout & Package

UPA2811T1L-E1-AY uses an 8-pin HVSON (3.3 × 3.3 mm, 0.32 mm height) package with exposed drain thermal pad. The package integrates heat-spreading capability and halogen-free, RoHS-compliant construction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with Si2301DDS-T1-GE3 and AO3401A, the UPA2811T1L-E1-AY delivers superior thermal performance (2.4 °C/W vs. >50 °C/W), higher current capability (−19 A DC), and significantly greater avalanche ruggedness-making it uniquely suited for high-density, high-reliability portable DC/DC power stages.

Availability

UPA2811T1L-E1-AY is available at Aetrix Electronics and suitable for smartphone power management, tablet DC/DC converters, and portable SSD power rail applications requiring stable component supply and long-term lifecycle support.

Supply support for UPA2811T1L-E1-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for automotive, industrial, and consumer electronics.

The UPA2811T1L-E1-AY belongs to Renesas' μPA high-efficiency power MOSFET family, engineered specifically for compact, high-current DC/DC conversion in battery-powered portable equipment.

FAQ

What is the maximum continuous drain current rating for UPA2811T1L-E1-AY at 25°C case temperature?

The UPA2811T1L-E1-AY supports −19 A DC drain current at T_C = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with adequate copper area and thermal vias to maintain case temperature, and is validated under the defined mounting condition (glass epoxy board, 25.4 mm × 25.4 mm × 0.8 mm). Exceeding this current without thermal derating risks exceeding the 150°C channel temperature limit.

Does UPA2811T1L-E1-AY support 4.5 V gate drive in practical applications?

Yes, UPA2811T1L-E1-AY is explicitly characterized for 4.5 V gate drive: its R_DS(on) is guaranteed ≤28 mΩ at V_GS = −4.5 V and I_D = −9.5 A. This makes the UPA2811T1L-E1-AY compatible with standard 5 V or 3.3 V logic outputs and many PMIC gate drivers without level-shifting, enabling efficient operation in portable systems where supply voltages are tightly constrained.

What is the purpose of the built-in gate protection diode in UPA2811T1L-E1-AY?

The built-in gate protection diode in UPA2811T1L-E1-AY is a Zener-type clamp between gate and source, rated to protect against electrostatic discharge (ESD) up to ±25 V. It prevents gate oxide damage during handling and board assembly. However, Renesas specifies that external protection remains necessary if transient voltages beyond the rated V_GSS (±25 V) may occur in-system-such as during hot-swap or inductive kick events.

Can UPA2811T1L-E1-AY be used as a synchronous rectifier in a buck converter?

Yes, UPA2811T1L-E1-AY is well-suited as a synchronous rectifier in buck converters due to its low R_DS(on) (15 mΩ max at −10 V), fast switching times (t_d(off) = 100 ns, t_f = 70 ns), and low body diode forward voltage (0.9 V at 19 A). Its P-channel topology allows high-side placement with simple gate control, and its avalanche rating (36 mJ) adds margin against voltage spikes during dead-time transitions in the UPA2811T1L-E1-AY-based design.

What thermal performance can be expected from UPA2811T1L-E1-AY in a typical PCB layout?

When mounted on a standard 25.4 mm × 25.4 mm glass epoxy board per the datasheet test condition, UPA2811T1L-E1-AY achieves R_th(ch-A) = 83.3 °C/W and R_th(ch-C) = 2.4 °C/W. In production layouts with 2 oz copper, thermal vias under the drain pad, and 100–200 mm² of inner-layer copper pour, actual R_th(ch-A) can improve to ~40–50 °C/W-enabling >3 W continuous dissipation at ambient temperatures below 60°C without forced airflow.