Renesas UPA2815T1S-E2-AT

Overview

UPA2815T1S-E2-AT from Renesas Electronics is a P-channel MOSFET optimized for high-efficiency DC/DC converters in portable electronics, featuring −30 V V_DSS, −21 A I_D(DC), and 11 mΩ R_DS(on) at V_GS = −10 V. It supports 4.5 V gate drive and operates in the HWSON-8 package with integrated heat spreader for thermal reliability in space-constrained power rails.

For engineers reviewing the UPA2815T1S-E2-AT datasheet, UPA2815T1S-E2-AT pinout, UPA2815T1S-E2-AT application, or UPA2815T1S-E2-AT equivalent, key selection criteria include avalanche energy rating (36.1 mJ), low R_DS(on) at 4.5 V gate drive (23 mΩ max), channel-to-case thermal resistance (8.6 °C/W), and Pb-free/Halogen-free compliance for portable power management designs.

Technical Context

This P-channel MOSFET employs a trench-gate structure to achieve low on-resistance while maintaining robust avalanche capability (I_AS = 19 A, E_AS = 36.1 mJ). Its gate threshold voltage range (−1.0 to −2.5 V) ensures reliable turn-on with standard logic-level control in synchronous buck high-side configurations.

Thermal performance is defined by dual dissipation ratings: 14.5 W at T_C = 25°C and 3.8 W on a 25.4 mm × 25.4 mm glass epoxy board. Switching parameters-including t_d(off) = 88 ns and Q_GD = 24 nC-support high-frequency operation up to 1 MHz in portable DC/DC converters.

Key Specifications

Pinout & Package

The UPA2815T1S-E2-AT is housed in the HWSON-8 surface-mount package (Renesas code PWSN0008JB-A), measuring 3.0 mm × 3.0 mm × 0.55 mm with exposed drain pad for thermal enhancement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with Si2305DS-T1-E3 and DMG2305UVT-7, the UPA2815T1S-E2-AT delivers 2.1× lower R_DS(on) at 4.5 V, verified avalanche energy, and documented channel-to-case thermal resistance-making it uniquely suitable for high-current, thermally constrained portable power switches where reliability under transient stress is mandatory.

Availability

UPA2815T1S-E2-AT is available at Aetrix Electronics and suitable for smartphone power management, tablet DC/DC converters, and portable SSD power rail switching requiring stable component supply across high-volume production cycles.

Supply support for UPA2815T1S-E2-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The μPA2815T1S belongs to Renesas' μPA ultra-thin power MOSFET product line, engineered specifically for high-density, thermally demanding DC/DC converter stages in battery-powered portable electronics.

FAQ

What is the maximum continuous drain current for UPA2815T1S-E2-AT at 25°C case temperature?

The UPA2815T1S-E2-AT supports a maximum continuous drain current of −21 A when the case temperature is maintained at 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with the HWSON-8 package's exposed drain pad soldered to a sufficient copper area. At higher ambient temperatures, derating applies per the Forward Bias Safe Operating Area curve on page 3 of the datasheet.

Does UPA2815T1S-E2-AT support logic-level gate drive from a 3.3 V microcontroller?

No, the UPA2815T1S-E2-AT does not reliably turn on with 3.3 V gate drive. Its gate threshold voltage range is −1.0 V to −2.5 V, but R_DS(on) is only guaranteed at V_GS = −4.5 V (23 mΩ max) and −10 V (11 mΩ max). A 3.3 V controller would produce V_GS ≈ −3.3 V, resulting in undefined and significantly higher on-resistance. A dedicated gate driver or level shifter is required for full enhancement.

What is the thermal resistance from channel to ambient for UPA2815T1S-E2-AT on a standard PCB?

The channel-to-ambient thermal resistance (R_th(ch-A)) for UPA2815T1S-E2-AT is 83.3 °C/W when mounted on a 25.4 mm × 25.4 mm × 0.8 mm glass epoxy board, as measured per JEDEC JESD51-3. This value assumes standard 2-oz copper with thermal vias under the exposed drain pad. Actual performance depends on PCB layout; R_th(ch-C) = 8.6 °C/W confirms the dominant thermal path is through the case (drain pad) to the PCB.

Can UPA2815T1S-E2-AT be used in avalanche-mode operation?

Yes, the UPA2815T1S-E2-AT is rated for single-pulse avalanche operation with I_AS = 19 A and E_AS = 36.1 mJ under defined test conditions (V_DD = −15 V, L = 100 μH, R_G = 25 Ω, starting T_ch = 25°C). This capability allows safe clamping of inductive energy during switching transients in DC/DC converters, but repetitive avalanche is not characterized and must be avoided in design.

Is UPA2815T1S-E2-AT compliant with RoHS and halogen-free standards?

Yes, the UPA2815T1S-E2-AT is explicitly certified Pb-free and Halogen-free per the datasheet ordering information and Renesas' environmental compliance documentation. It meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-609 Category 2a for bromine and chlorine content, making it suitable for consumer portable electronics requiring strict material declarations.