Renesas UPA2816T1S-E2-AT
- Part No.:
- UPA2816T1S-E2-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
UPA2816T1S-E2-AT.pdf
- Description:
- MOSFET P-CH 30V 17A 8HWSON
- Quantity:
- Payment:

- Shipping:

Inventory:10,000
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Product details
Overview
UPA2816T1S-E2-AT from Renesas Electronics is a P-channel MOSFET designed for high-efficiency DC/DC converter and power management circuits in portable electronics. It delivers −30 V VDSS, −17 A continuous drain current at TC = 25°C, and 15.5 mΩ RDS(on) at VGS = −10 V, enabling compact, low-loss synchronous buck topologies.
For engineers reviewing the UPA2816T1S-E2-AT datasheet, UPA2816T1S-E2-AT pinout, UPA2816T1S-E2-AT application, or UPA2816T1S-E2-AT equivalent, key selection criteria include its 4.5 V gate-drive compatibility, HWSON-8 thermal performance (Rth(ch-C) = 10.4°C/W), and avalanche-rated operation (IAS = 17 A, EAS = 28.9 mJ).
Technical Context
This device operates as a high-side or load-switching P-channel MOSFET in battery-powered systems, leveraging its low threshold voltage range (VGS(off) = −1.0 to −2.5 V) and robust 4.5 V logic-level drive capability. Its optimized gate charge (QG = 33.4 nC) and fast switching (td(on) = 12 ns, tf = 80 ns) support high-frequency PWM control up to several hundred kHz.
The HWSON-8 package integrates a thermally enhanced drain-exposed pad and supports surface-mount reflow with minimal board area. Its body diode exhibits VF(S-D) = 0.9 V at 17 A, enabling efficient reverse-current conduction during dead-time intervals in synchronous converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −30 V - Maximum blocking voltage for 3.3 V–5 V input rail protection and 12 V intermediate bus applications |
| RDS(on) @ VGS = −10 V | 15.5 mΩ max - Enables ≤2.6 W conduction loss at −17 A, critical for thermal budget in space-constrained portable PCBs |
| RDS(on) @ VGS = −4.5 V | 45 mΩ max - Ensures functional switching with standard 4.5 V logic drivers, avoiding dedicated level-shifters |
| QG | 33.4 nC - Determines gate driver power requirement and switching loss trade-off in 300–500 kHz DC/DC designs |
| IAS / EAS | 17 A / 28.9 mJ - Specifies single-pulse avalanche ruggedness for inductive load turn-off and transient overvoltage survival |
| Rth(ch-C) | 10.4°C/W - Confirms effective heat transfer from channel to PCB copper via exposed drain pad in HWSON-8 footprint |
Pinout & Package
UPA2816T1S-E2-AT uses the HWSON-8 (RENESAS code PWSN0008JB-A) surface-mount package: 3.0 × 3.0 mm body, 0.5 mm pitch, thermally enhanced drain-exposed pad on bottom. Total mass ≈ 0.022 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Common source node for internal P-channel cells; tied to system ground or low-side reference in high-side switch configuration |
| 4 | Gate | Control terminal accepting −4.5 V to −25 V bias; requires ESD-safe handling due to thin gate oxide |
| 5, 6, 7, 8 | Drain | High-current output node connected to exposed thermal pad; serves as main power path and primary heat dissipation interface |
Key Features
| Feature | Design Value |
|---|---|
| 4.5 V gate-drive compatibility | Operates fully enhanced with standard 4.5 V logic outputs, eliminating need for gate boost circuitry in portable PMICs |
| Low RDS(on) at −10 V | 15.5 mΩ enables <1.5 W conduction loss at rated −17 A, reducing thermal stress in sealed handheld enclosures |
| Avalanche-rated design | Rated for 17 A single-pulse avalanche current, supporting reliable operation under inductive switching transients in DC/DC controllers |
| Pb-free and halogen-free construction | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile, suitable for consumer and industrial assembly lines |
Applications
| Portable DC/DC Converter | USB Power Delivery Switch |
|---|---|
Use Scenario: Step-down conversion from single-cell Li-ion (4.2 V) to 3.3 V or 1.8 V rails in smartphones and wearables. IC Role / Device Role / Timing Role: High-side synchronous rectifier in buck converter, controlled by external PWM controller. Use Value: 15.5 mΩ RDS(on) minimizes I²R loss at peak load currents, extending battery runtime by >3% versus 25 mΩ alternatives. |
Use Scenario: Input power path control for USB-C PD ports, enabling hot-plug detection and overvoltage protection. IC Role / Device Role / Timing Role: Load switch isolating upstream source from downstream device during fault conditions. Use Value: −25 V VGSS rating ensures safe operation during ±20 V USB-C transient events per USB PD 3.1 spec. |
| Power Bank Output Stage | Industrial Sensor Node Supply |
Use Scenario: Output stage of multi-cell power bank delivering regulated 5 V/9 V/15 V to external devices. IC Role / Device Role / Timing Role: Reverse-current blocking MOSFET preventing battery discharge when external supply is active. Use Value: Body diode VF(S-D) = 0.9 V at 17 A reduces forward drop compared to Schottky solutions, improving efficiency by ~2.5% at full load. |
Use Scenario: Low-quiescent-power supply enable switch for wireless sensor nodes powered by coin-cell or energy harvesting. IC Role / Device Role / Timing Role: Controlled power gating element activated only during sensor readout or RF transmission bursts. Use Value: ID(DC) = −17 A headroom allows use with future higher-power radios without PCB redesign, supporting long-term BOM stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DDS-T1-GE3 | RDS(on) = 115 mΩ @ −4.5 V; smaller SOT-23 package; lower ID rating (−2.7 A) | Suitable only for sub-1 A loads; lacks avalanche rating and thermal pad | Select for ultra-low-cost, low-current bias rails where size trumps efficiency |
| DMG2305UVT-7 | RDS(on) = 48 mΩ @ −4.5 V; same HWSON-8 footprint; no specified EAS rating | Acceptable for non-avalanche-prone applications like LED dimming, but not recommended for DC/DC inductive switching | Choose when footprint compatibility is mandatory but avalanche ruggedness is not required |
Compared with Si2301DDS-T1-GE3 and DMG2305UVT-7, UPA2816T1S-E2-AT provides superior conduction efficiency at high current, verified avalanche capability for power converter reliability, and thermal performance enabled by its exposed-drain HWSON-8 package-making it optimal for portable DC/DC and battery-isolation applications demanding both density and robustness.
Availability
UPA2816T1S-E2-AT is available at Aetrix Electronics and suitable for portable DC/DC converter design, USB-C power delivery implementation, and industrial sensor node power gating requiring stable component supply across production lifecycles.
Supply support for UPA2816T1S-E2-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and IoT markets.
The μPA2816T1S series targets high-efficiency power management in space-constrained portable electronics, emphasizing low RDS(on), logic-level gate drive, and robust thermal packaging for battery-powered systems.
FAQ
What is the maximum continuous drain current rating for UPA2816T1S-E2-AT?
The UPA2816T1S-E2-AT has a maximum continuous drain current (ID(DC)) of −17 A at case temperature TC = 25°C. This rating assumes proper PCB thermal design using the HWSON-8 package's exposed drain pad. Derating applies above 25°C per the datasheet's derating curve, reaching zero at TC ≈ 125°C.
Does UPA2816T1S-E2-AT support 4.5 V gate drive in practical applications?
Yes, UPA2816T1S-E2-AT is explicitly characterized for 4.5 V gate drive: RDS(on) is guaranteed ≤45 mΩ at VGS = −4.5 V and ID = −7.0 A. This enables direct interfacing with 4.5 V logic outputs without level-shifting, confirmed in the Electrical Characteristics table on page 2 of R07DS0778EJ0101.
What is the thermal resistance from channel to case for UPA2816T1S-E2-AT?
The channel-to-case thermal resistance (Rth(ch-C)) of UPA2816T1S-E2-AT is 10.4°C/W, measured with the device mounted on a standard glass-epoxy board. This value reflects heat transfer from the silicon channel directly to the exposed drain pad, making it critical for calculating junction temperature under load.
Is UPA2816T1S-E2-AT rated for avalanche energy, and what are the test conditions?
Yes, UPA2816T1S-E2-AT is avalanche-rated: IAS = 17 A and EAS = 28.9 mJ. Testing follows JEDEC standards with starting channel temperature of 25°C, VDD = −15 V, gate resistor RG = 25 Ω, and gate drive transition from −20 V to 0 V, as documented in the Absolute Maximum Ratings table and Test Circuit 1.
What package type does UPA2816T1S-E2-AT use, and how is it identified?
UPA2816T1S-E2-AT uses the HWSON-8 package (Renesas code PWSN0008JB-A): a 3.0 × 3.0 mm, 0.5 mm pitch, thermally enhanced surface-mount package with an exposed drain pad. Pin 4 is Gate; pins 1–3 are Source; pins 5–8 are Drain, as shown in the Equivalent Circuit diagram on page 6 of the datasheet.
UPA2816T1S-E2-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 15.5mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 33.4 nC @ 10 V
- Vgs (Max):
- +20V, -25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1160 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HWSON (3.3x3.3)
UPA2816T1S-E2-AT FAQ
1.How can I place an order for UPA2816T1S-E2-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2816T1S-E2-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2816T1S-E2-AT reliable?
The price and inventory of UPA2816T1S-E2-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2816T1S-E2-AT is usually 5 days.
3.What payment methods are accepted for UPA2816T1S-E2-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2816T1S-E2-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2816T1S-E2-AT?
UPA2816T1S-E2-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2816T1S-E2-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2816T1S-E2-AT?
For technical support, including UPA2816T1S-E2-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2816T1S-E2-AT requirements.
6.How does Aetrix verify that UPA2816T1S-E2-AT is sourced from the original manufacturer or authorized distributors?
All UPA2816T1S-E2-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2816T1S-E2-AT meets industry standards.
7.What is the process for return or replacement of UPA2816T1S-E2-AT?
All UPA2816T1S-E2-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2816T1S-E2-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2816T1S-E2-AT part is unused and in its original packaging.
Return procedure for UPA2816T1S-E2-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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