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Renesas UPA2821T1L-E1-AT
- Part No.:
- UPA2821T1L-E1-AT
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerWDFN
- Datasheet:
-
UPA2821T1L-E1-AT.pdf
- Description:
- MOSFET N-CH 30V 26A 8HWSON
- Quantity:
- Payment:
- Shipping:
Inventory:2,075
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Product details
Overview
UPA2821T1L-E1-AT from Renesas Electronics is an N-channel MOSFET designed for high-current power switching in notebook computer power management and lithium-ion battery protection circuits. It features a 30 V drain-source rating, 3.8 mΩ maximum RDS(on) at VGS = 10 V / ID = 26 A, 4.5 V gate-drive compatibility, and an 8-pin HVSON (3333) surface-mount package.
For engineers reviewing the UPA2821T1L-E1-AT datasheet, UPA2821T1L-E1-AT pinout, UPA2821T1L-E1-AT application, or UPA2821T1L-E1-AT equivalent, key selection criteria include low on-resistance at 4.5 V drive, avalanche energy rating (32.4 mJ), thermal resistance (Rth(ch-C) = 2.4 °C/W), and integrated body diode performance (VF(S-D) = 0.9 V at 26 A).
Technical Context
This MOSFET employs a trench-gate process optimized for low RDS(on) and fast switching in synchronous rectification and load-switching topologies. Its 8-pin HVSON (3333) package integrates four parallel drain terminals and three source terminals to minimize conduction losses and improve current sharing.
The device supports both DC and pulsed operation up to 104 A (pulse), with specified avalanche capability (IAS = 18 A, EAS = 32.4 mJ) and gate charge parameters (QG = 51 nC at VGS = 10 V) enabling efficient gate driver sizing for high-frequency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage in battery protection and 3.3/5/12 V rail switching applications |
| RDS(on) @ VGS=10 V | 3.8 mΩ max - Enables <100 mW conduction loss at 26 A, critical for thermally constrained notebook PCBs |
| RDS(on) @ VGS=4.5 V | 10.5 mΩ max - Ensures reliable turn-on with standard logic-level gate drivers in battery management ICs |
| QG | 51 nC @ VGS=10 V - Determines gate driver current requirement for ≤100 ns switching transitions |
| Rth(ch-C) | 2.4 °C/W - Allows direct thermal coupling to PCB copper pour for >50 W power dissipation at TC=25°C |
| EAS | 32.4 mJ - Supports unclamped inductive switching in battery disconnect and hot-swap circuits without external snubbers |
| VF(S-D) | 0.9 V @ 26 A - Defines forward conduction loss during reverse-current conditions in bidirectional battery paths |
Pinout & Package
Package: 8-pin HVSON (3333), 3.3 mm × 3.3 mm × 0.32 mm, exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source | Three parallel low-inductance source connections for return path integrity in high-di/dt battery protection |
| 4 | Gate | Single gate input with integrated ESD protection diode; requires <10 Ω series resistance for ringing suppression |
| 5, 6, 7, 8 | Drain | Four parallel drain terminals tied to exposed bottom thermal pad - must be soldered to large PCB copper area |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at 4.5 V enables direct interface with 5 V or 3.3 V microcontrollers and BMS ICs |
| Low RDS(on) × QG figure of merit | 3.8 mΩ × 51 nC = 194 mΩ·nC - balances conduction and switching losses in 100–500 kHz DC-DC stages |
| Integrated avalanche ruggedness | Rated single-pulse EAS = 32.4 mJ eliminates need for external clamping in battery overcurrent fault handling |
| Pb-free and halogen-free construction | Complies with JEDEC J-STD-020 moisture sensitivity level 2a (MSL 2a) for standard SMT reflow |
Applications
| Smart Battery Protection | Notebook CPU/GPU VRM |
|---|---|
Use Scenario: Lithium-ion pack with integrated protection IC monitoring cell voltage, current, and temperature. IC Role / Device Role / Timing Role: Primary load switch isolating battery from system during overcurrent or short-circuit events. Use Value: 32.4 mJ avalanche energy absorbs fault energy without destruction; 10.5 mΩ RDS(on) at 4.5 V ensures activation by common protection IC gate outputs. | Use Scenario: High-efficiency buck converter supplying core voltage to mobile CPUs or GPUs. IC Role / Device Role / Timing Role: Synchronous rectifier in 300–600 kHz switching regulator stage. Use Value: 3.8 mΩ RDS(on) minimizes conduction loss at 20–30 A loads; low Ciss (2490 pF) reduces gate drive power at high frequency. |
| USB-C Power Delivery Switch | Hot-Swap Controller Interface |
Use Scenario: Bidirectional 20 V/5 A USB-C PD port supporting sink and source roles. IC Role / Device Role / Timing Role: Reverse-blocking power switch controlling VBUS path direction and fault isolation. Use Value: Body diode VF(S-D) = 0.9 V limits forward drop in sink mode; 30 V rating accommodates 20 V PD + margin. | Use Scenario: Industrial backplane with live-insertion capability requiring controlled inrush current. IC Role / Device Role / Timing Role: Inrush-limiting MOSFET driven by dedicated hot-swap controller. Use Value: 104 A pulse rating handles surge currents during connector mating; low QG enables fast turn-on control under dynamic load steps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 3.3 mΩ @ 10 V, but 5× higher QG (250 nC); TO-252 package with higher Rth(j-a) | Less suitable for high-frequency switching due to gate charge; better for lower-frequency, higher-current industrial loads | Select when thermal mass > switching speed; avoid in portable battery systems requiring compact layout |
| IPB033N04LGATMA1 | RDS(on) = 3.3 mΩ @ 10 V, PQFN 5×6 mm package; no specified EAS rating in datasheet | Lacks documented avalanche capability; requires external clamping in unclamped inductive switching | Prefer for cost-sensitive automotive body electronics where avalanche stress is absent |
Compared with SiR872DP-T1-GE3 and IPB033N04LGATMA1, the UPA2821T1L-E1-AT offers superior gate-drive efficiency (lower QG/RDS(on) ratio), verified avalanche ruggedness, and a smaller footprint - making it optimal for space-constrained, high-reliability portable power systems.
Availability
UPA2821T1L-E1-AT is available at Aetrix Electronics and suitable for notebook power management, lithium-ion battery protection, and USB-C PD power path applications requiring stable component supply and long-term lifecycle support.
Supply support for UPA2821T1L-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.
The μPA2821 series targets high-efficiency, high-reliability power switching in portable computing and battery-powered systems, emphasizing low RDS(on), logic-level drive, and robust fault tolerance.
FAQ
What is the maximum continuous drain current rating for UPA2821T1L-E1-AT at 25°C case temperature?
The UPA2821T1L-E1-AT has a continuous drain current rating of ±26 A at TC = 25°C, as specified in its Absolute Maximum Ratings table. This rating assumes proper PCB thermal design with the exposed drain pad soldered to ≥1000 mm² of 2 oz copper. Derating applies above 25°C per the published thermal resistance curve.
Does UPA2821T1L-E1-AT support 4.5 V gate drive in production designs?
Yes, the UPA2821T1L-E1-AT is explicitly characterized for 4.5 V gate drive, with RDS(on) guaranteed at ≤10.5 mΩ under VGS = 4.5 V and ID = 6.5 A. This makes the UPA2821T1L-E1-AT compatible with standard logic-level controllers used in battery protection ICs and portable power management systems.
What is the thermal resistance from channel to case (Rth(ch-C)) for UPA2821T1L-E1-AT?
The UPA2821T1L-E1-AT has a channel-to-case thermal resistance of 2.4 °C/W, measured from junction to the exposed drain pad. This low value enables high-power dissipation when the device is mounted on a thermally enhanced PCB with adequate copper area and via stitching beneath the package.
Is UPA2821T1L-E1-AT rated for avalanche operation, and what are the test conditions?
Yes, the UPA2821T1L-E1-AT is rated for single-pulse avalanche with IAS = 18 A and EAS = 32.4 mJ. Test conditions specify starting channel temperature of 25°C, VDD = 15 V, gate resistor RG = 25 Ω, and gate voltage transition from 20 V to 0 V, with L = 100 μH.
How many source and drain terminals does UPA2821T1L-E1-AT have, and why is this configuration used?
The UPA2821T1L-E1-AT has three source pins (1, 2, 3) and four drain pins (5, 6, 7, 8), plus one gate pin (4). This multi-terminal layout reduces package inductance and current density per bond wire, improving switching performance and thermal distribution in high-current battery protection and VRM applications.
UPA2821T1L-E1-AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 8-PowerWDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.8mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2490 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.5W (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-HWSON (3.3x3.3)
UPA2821T1L-E1-AT FAQ
1.How can I place an order for UPA2821T1L-E1-AT through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA2821T1L-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA2821T1L-E1-AT reliable?
The price and inventory of UPA2821T1L-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2821T1L-E1-AT is usually 5 days.
3.What payment methods are accepted for UPA2821T1L-E1-AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2821T1L-E1-AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA2821T1L-E1-AT?
UPA2821T1L-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA2821T1L-E1-AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA2821T1L-E1-AT?
For technical support, including UPA2821T1L-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2821T1L-E1-AT requirements.
6.How does Aetrix verify that UPA2821T1L-E1-AT is sourced from the original manufacturer or authorized distributors?
All UPA2821T1L-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2821T1L-E1-AT meets industry standards.
7.What is the process for return or replacement of UPA2821T1L-E1-AT?
All UPA2821T1L-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2821T1L-E1-AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA2821T1L-E1-AT part is unused and in its original packaging.
Return procedure for UPA2821T1L-E1-AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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