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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas UPA2822T1L-E1-AT

Name: UPA2822T1L-E1-AT
Brand: Renesas
SKU: UPA2822T1L-E1-AT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: UPA2822T1L-E1-AT

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: 8-PowerWDFN

Datasheet:: UPA2822T1L-E1-AT.pdf

Description:: MOSFET N-CH 30V 34A 8HWSON

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Product details

Overview

UPA2822T1L-E1-AT from Renesas Electronics is an N-channel power MOSFET designed for high-current switching in notebook computer power management and lithium-ion battery protection circuits. It features a 30 V V_DSS, 2.6 mΩ R_DS(on) at V_GS = 10 V / I_D = 34 A, 4.5 V gate-drive capability, and an 8-pin HVSON (3333) surface-mount package.

For engineers reviewing the UPA2822T1L-E1-AT datasheet, UPA2822T1L-E1-AT pinout, UPA2822T1L-E1-AT application, or UPA2822T1L-E1-AT equivalent, key selection criteria include low on-resistance at 4.5 V drive, avalanche energy rating (62.5 mJ), thermal resistance (R_th(ch-C) = 2.4 °C/W), and Pb-free/Halogen-Free compliance for portable power systems.

Technical Context

This device operates as a single N-channel enhancement-mode MOSFET with integrated body diode and gate-source ESD protection diode. Its design supports synchronous rectification and bidirectional current handling in battery protection ICs, where fast switching (t_d(on) = 42 ns, t_f = 85 ns) and low conduction loss are critical.

The UPA2822T1L-E1-AT delivers rated 34 A DC drain current at T_C = 25°C with 52 W total power dissipation, enabled by low channel-to-case thermal resistance. Avalanche capability (I_AS = 25 A, E_AS = 62.5 mJ) supports robust operation under inductive load switching transients in compact mobile power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for Li-ion battery pack protection (e.g., 3S–4S configurations).
R_DS(on) @ V_GS = 10 V	2.6 mΩ max - Enables ≤1.16 W conduction loss at 34 A, reducing thermal stress in thin-profile notebooks.
R_DS(on) @ V_GS = 4.5 V	7.5 mΩ max - Ensures reliable turn-on with standard logic-level gate drivers in battery management ICs.
Q_G	83 nC - Optimized for efficient gate driving with moderate-speed controllers (e.g., Renesas ISL94203).
E_AS	62.5 mJ - Withstands single-pulse inductive energy without failure during hot-plug or short-circuit events.
R_th(ch-C)	2.4 °C/W - Allows direct thermal coupling to PCB copper pour or heatsink for high-power density layouts.
I_D(pulse)	±150 A - Supports peak current demands during CPU/GPU burst loads without derating.

Pinout & Package

Package: 8-pin HVSON (3333), 3.3 mm × 3.3 mm × 0.32 mm, exposed drain pad for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common source node; electrically tied to internal substrate; requires low-impedance PCB trace to ground plane.
4	Gate	Control input; driven by external gate driver or BMS controller; protected by integrated Zener diode.
5, 6, 7, 8	Drain	High-side or low-side switch node; connected to exposed metal pad for thermal conduction and current carrying.

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	7.5 mΩ max enables use with 5 V or 4.5 V logic-level gate drivers without level-shifting circuitry.
Integrated gate-source ESD protection	Zener diode clamps ±20 V gate voltage, reducing need for external TVS in space-constrained BMS modules.
High avalanche energy rating	62.5 mJ single-pulse capability ensures reliability during battery disconnect or load dump events.
Pb-free and Halogen-Free construction	Complies with JEDEC J-STD-020 and RoHS Directive for consumer electronics manufacturing.
Small 3.3 mm × 3.3 mm footprint	Reduces PCB area by >40% vs. SO-8 packages while maintaining 52 W thermal performance.

Applications

Lithium-Ion Battery Protection	Notebook Power Delivery
Use Scenario: Primary overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs used in ultrabooks and 2-in-1 devices. IC Role / Device Role / Timing Role: Low-side or high-side main switch controlled by dedicated protection IC (e.g., S-8261) to interrupt fault current within microseconds. Use Value: 2.6 mΩ R_DS(on) minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate current sensing.	Use Scenario: High-efficiency buck converter output stage in CPU/GPU core voltage regulators (VRMs) of thin-and-light notebooks. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET paired with upper-side control FET, switching at 300–1000 kHz. Use Value: 83 nC Q_G and 85 ns fall time support high-frequency operation while limiting gate drive losses in thermally constrained VRM layouts.
USB-C Power Delivery Switching	Portable SSD Power Path Control
Use Scenario: Bidirectional power path management in USB-C PD 3.0 compliant docking stations supporting up to 100 W delivery. IC Role / Device Role / Timing Role: Reverse-blocking switch placed between source and sink ports to enforce directionality and prevent backfeed. Use Value: 30 V V_DSS and ±150 A pulse rating handle 20 V/5 A PD profiles with margin for transient surges and cable inductance ringing.	Use Scenario: Load switch controlling 5 V/3.3 V power to NVMe SSD modules in portable storage enclosures with thermal throttling constraints. IC Role / Device Role / Timing Role: Inrush-limited power enable switch activated by microcontroller GPIO, with body diode conducting during hot-swap insertion. Use Value: 0.8 V body diode forward voltage (V_F(S-D)) reduces self-heating during brief reverse conduction, improving reliability during frequent plug/unplug cycles.

Lithium-Ion Battery Protection

Notebook Power Delivery

Use Scenario: Primary overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs used in ultrabooks and 2-in-1 devices.

IC Role / Device Role / Timing Role: Low-side or high-side main switch controlled by dedicated protection IC (e.g., S-8261) to interrupt fault current within microseconds.

Use Value: 2.6 mΩ R_DS(on) minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate current sensing.

Use Scenario: High-efficiency buck converter output stage in CPU/GPU core voltage regulators (VRMs) of thin-and-light notebooks.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET paired with upper-side control FET, switching at 300–1000 kHz.

Use Value: 83 nC Q_G and 85 ns fall time support high-frequency operation while limiting gate drive losses in thermally constrained VRM layouts.

USB-C Power Delivery Switching

Portable SSD Power Path Control

Use Scenario: Bidirectional power path management in USB-C PD 3.0 compliant docking stations supporting up to 100 W delivery.

IC Role / Device Role / Timing Role: Reverse-blocking switch placed between source and sink ports to enforce directionality and prevent backfeed.

Use Value: 30 V V_DSS and ±150 A pulse rating handle 20 V/5 A PD profiles with margin for transient surges and cable inductance ringing.

Use Scenario: Load switch controlling 5 V/3.3 V power to NVMe SSD modules in portable storage enclosures with thermal throttling constraints.

IC Role / Device Role / Timing Role: Inrush-limited power enable switch activated by microcontroller GPIO, with body diode conducting during hot-swap insertion.

Use Value: 0.8 V body diode forward voltage (V_F(S-D)) reduces self-heating during brief reverse conduction, improving reliability during frequent plug/unplug cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
SiR872DP-T1-GE3	R_DS(on) = 2.3 mΩ @ 10 V but requires 10 V gate drive; no specified E_AS rating; larger 5×6 mm PQFN package.	Better conduction loss at full gate drive, but unsuitable for 4.5 V logic-level systems without gate boosting.	Select when gate drive ≥10 V is available and board space allows larger footprint.
DMTH3010LPS-13	R_DS(on) = 3.0 mΩ @ 10 V; 4.5 V drive supported but R_DS(on) rises to 9.5 mΩ; higher Q_G (102 nC); same 3.3×3.3 mm HVSON package.	Higher gate charge increases driver complexity; lower avalanche rating (E_AS = 45 mJ) limits surge robustness.	Acceptable for cost-sensitive designs where 4.5 V drive is required but avalanche margin is less critical.

Compared with SiR872DP-T1-GE3 and DMTH3010LPS-13, the UPA2822T1L-E1-AT uniquely balances 4.5 V drive compatibility, 62.5 mJ avalanche energy, and 3.3 mm × 3.3 mm footprint-making it optimal for space-constrained, logic-level-driven battery protection and VRM applications where both efficiency and ruggedness are required.

Availability

UPA2822T1L-E1-AT is available at Aetrix Electronics and suitable for notebook computer power management, lithium-ion battery protection circuits, and USB-C power delivery switching requiring stable component supply and long-term lifecycle support.

Supply support for UPA2822T1L-E1-AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.

The UPA2822T1L-E1-AT belongs to Renesas' μPA series of high-density power MOSFETs engineered specifically for ultra-thin portable electronics demanding low R_DS(on), small footprint, and robust transient handling.

FAQ

What is the maximum continuous drain current rating for UPA2822T1L-E1-AT at 25°C case temperature?

The UPA2822T1L-E1-AT supports ±34 A DC drain current when the case temperature (T_C) is maintained at 25°C. This rating assumes proper PCB thermal design with adequate copper area under the exposed drain pad, as specified in the datasheet's mounting conditions (glass epoxy board 25.4 mm × 25.4 mm × 0.8 mm). Derating applies above 25°C per the published derating curve.

Does UPA2822T1L-E1-AT support 4.5 V gate drive, and what is its R_DS(on) under that condition?

Yes, the UPA2822T1L-E1-AT is explicitly characterized for 4.5 V gate drive, with R_DS(on) = 3.5–7.5 mΩ at I_D = 8.5 A. This makes it compatible with standard logic-level controllers and battery protection ICs without requiring gate voltage boosting, unlike many 30 V MOSFETs that only specify performance at 10 V.

What is the avalanche energy rating of UPA2822T1L-E1-AT, and how is it tested?

The UPA2822T1L-E1-AT has a single-pulse avalanche energy rating (E_AS) of 62.5 mJ, measured under standardized conditions: starting channel temperature of 25°C, V_DD = 15 V, gate resistor R_G = 25 Ω, and inductance L = 100 μH. This rating confirms its ability to absorb inductive switching energy without failure in battery disconnect or load dump scenarios.

Is UPA2822T1L-E1-AT RoHS-compliant and halogen-free?

Yes, the UPA2822T1L-E1-AT is Pb-free and Halogen-Free, meeting JEDEC J-STD-020 moisture sensitivity and RoHS Directive requirements. The "-E1-AT" suffix denotes pure tin (Sn) lead plating and tape-and-reel packaging, confirming compliance for consumer electronics manufacturing and export.

What is the thermal resistance from channel to case (R_th(ch-C)) for UPA2822T1L-E1-AT, and why does it matter?

The UPA2822T1L-E1-AT has a channel-to-case thermal resistance (R_th(ch-C)) of 2.4 °C/W, measured from junction to the exposed drain pad. This low value enables efficient heat transfer to the PCB copper pour or external heatsink-critical for sustaining 34 A DC current in thermally constrained notebook and portable SSD applications without forced air cooling.

UPA2822T1L-E1-AT Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 8-PowerWDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4660 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-HWSON (3.3x3.3)

UPA2822T1L-E1-AT FAQ

1.How can I place an order for UPA2822T1L-E1-AT through Aetrix?

Please submit a Request for Quotation (RFQ) for UPA2822T1L-E1-AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UPA2822T1L-E1-AT reliable?

The price and inventory of UPA2822T1L-E1-AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA2822T1L-E1-AT is usually 5 days.

3.What payment methods are accepted for UPA2822T1L-E1-AT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA2822T1L-E1-AT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UPA2822T1L-E1-AT?

UPA2822T1L-E1-AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UPA2822T1L-E1-AT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UPA2822T1L-E1-AT?

For technical support, including UPA2822T1L-E1-AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA2822T1L-E1-AT requirements.

6.How does Aetrix verify that UPA2822T1L-E1-AT is sourced from the original manufacturer or authorized distributors?

All UPA2822T1L-E1-AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA2822T1L-E1-AT meets industry standards.

7.What is the process for return or replacement of UPA2822T1L-E1-AT?

All UPA2822T1L-E1-AT units undergo pre-shipment inspection (PSI). If there is an issue with UPA2822T1L-E1-AT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UPA2822T1L-E1-AT part is unused and in its original packaging.

Return procedure for UPA2822T1L-E1-AT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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