My Inquiry
My Account
Renesas UPA622TT-E1-A
- Part No.:
- UPA622TT-E1-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- 6-SMD, Flat Leads
- Datasheet:
-
UPA622TT-E1-A.pdf
- Description:
- MOSFET N-CH 30V 3A 6WSOF
- Quantity:
- Payment:
- Shipping:
Inventory:12,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
UPA622TT-E1-A from Renesas Electronics is an N-channel MOSFET optimized for low-voltage switching applications, featuring 4.0 V gate drive capability, RDS(on) ≤ 139 mΩ at VGS = 4.0 V / ID = 1.0 A, ±3.0 A DC drain current, and 6-pin WSOF (1620) surface-mount package. It serves as a power switch in portable electronics where space and battery efficiency are critical.
For engineers reviewing the UPA622TT-E1-A datasheet, UPA622TT-E1-A pinout, UPA622TT-E1-A application, or UPA622TT-E1-A equivalent, key selection criteria include verified 4.0 V logic-level drive compatibility, body diode forward voltage (VF(S-D) = 0.90 V @ 3.0 A), transient thermal resistance profile, and FR-4 board-mounted power derating behavior up to 150°C channel temperature.
Technical Context
The UPA622TT-E1-A employs a planar trench-gate structure enabling stable enhancement-mode operation with gate threshold voltage VGS(off) between 1.5 V and 2.5 V. Its low input capacitance (Ciss = 155 pF) and fast switching times-td(on) = 10 ns, tr = 28 ns, td(off) = 75 ns-support high-frequency PWM control in compact DC-DC and load-switching circuits.
Designed for single-pulse and repetitive pulse operation (PW ≤ 10 µs, duty cycle ≤ 1%), it integrates a gate-source protection diode for ESD robustness but requires external overvoltage clamping when exposed to transients exceeding ±20 V gate-source rating or 30 V drain-source rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage defines safe operating range in 3.3 V–5 V rail switching. |
| RDS(on) @ 4.0 V | 139 mΩ MAX - On-resistance at logic-level gate drive enables efficient 1.0 A load switching without level-shifting circuitry. |
| ID(DC) | ±3.0 A - Continuous drain current rating under FR-4 board thermal conditions (5000 mm² × 1.1 mm). |
| td(off) | 75 ns - Turn-off delay time with 10 Ω gate resistor supports >1 MHz switching in synchronous buck topologies. |
| VF(S-D) | 0.90 V @ 3.0 A - Forward voltage of integrated body diode impacts reverse recovery losses in flyback or H-bridge configurations. |
| QG | 3.8 nC - Total gate charge determines driver strength requirement and switching loss trade-off at target frequency. |
| Tch max | 150 °C - Maximum channel temperature sets thermal design margin for ambient temperatures up to 85 °C with proper PCB copper area. |
Pinout & Package
UPA622TT-E1-A uses a 6-pin Wafer Scale Outline Package (WSOF) measuring 1.6 mm × 2.0 mm × 0.8 mm (L × W × H), with exposed drain pad for thermal conduction. The package is Pb-free and compatible with reflow soldering per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 5, 6 | Drain | Common high-current output node; internally connected to exposed thermal pad for heat dissipation. |
| 3 | Gate | Control terminal requiring <139 mΩ on-state resistance at 4.0 V drive; sensitive to ESD (protected by internal diode). |
| 4 | Source | Reference node for gate drive and current sensing; tied to system ground in low-side switch configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS = 4.0 V, eliminating need for gate boosters in 3.3 V/5 V microcontroller interfaces. |
| Low RDS(on) at low VGS | 139 mΩ max at 4.0 V ensures <140 mW conduction loss at 1.0 A, critical for battery runtime in portable devices. |
| Fast switching performance | Combined turn-on + turn-off delay <100 ns enables clean edge transitions in 1–2 MHz DC-DC converters. |
| Integrated gate protection | On-chip gate-source diode provides basic ESD immunity (HBM Class 2), reducing need for external TVS in cost-sensitive designs. |
| Thermally optimized package | Exposed drain pad and thin 0.8 mm profile support >1.3 W power dissipation on standard FR-4, easing thermal layout. |
Applications
| Portable Power Switch | USB Load Switch |
|---|---|
Use Scenario: Enabling/disabling power to peripherals in smartphones, tablets, and wearables using 3.3 V GPIO control. IC Role / Device Role / Timing Role: Low-side N-channel power switch controlled directly by baseband processor or PMIC. Use Value: Eliminates external level shifter and reduces BOM count while maintaining <140 mW conduction loss at 1.0 A load current. | Use Scenario: Hot-swap protection and inrush current limiting for USB 2.0/3.0 downstream ports in docking stations and hubs. IC Role / Device Role / Timing Role: Load switch with fast turn-off (<100 ns) to prevent bus fault propagation during overcurrent events. Use Value: Body diode VF(S-D) = 0.90 V minimizes forward drop during reverse current scenarios, improving port compliance. |
| DC-DC Synchronous Rectifier | LED Backlight Driver |
Use Scenario: Secondary-side synchronous rectification in isolated flyback converters for AC-DC adapters and chargers. IC Role / Device Role / Timing Role: High-efficiency rectifying switch replacing Schottky diode in 5–12 V output rails. Use Value: RDS(on) ≤ 139 mΩ at 4.0 V drive reduces conduction loss by >40% vs. typical 0.4 V Schottky, improving full-load efficiency. | Use Scenario: Constant-current LED string switching in LCD backlight modules for industrial displays and automotive infotainment. IC Role / Device Role / Timing Role: PWM-controlled current path switch synchronized to dimming signal. Use Value: Fast 28 ns rise time ensures precise duty-cycle fidelity at 1–5 kHz dimming frequencies, preventing visible flicker. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AO3400 | RDS(on) = 44 mΩ @ VGS = 10 V; higher gate charge (QG = 6.7 nC); SOT-23 package. | Higher conduction efficiency above 5 V drive but slower switching and less thermal headroom than UPA622TT-E1-A. | Prefer AO3400 only if gate drive is ≥5 V and board space allows larger thermal pad requirements. |
| SI2302DS | RDS(on) = 90 mΩ @ VGS = 4.5 V; lower ID(DC) = 2.6 A; same SOT-23 footprint. | Lower current rating and no specified 4.0 V drive guarantee limits use in 1.0–3.0 A portable power rails. | Select SI2302DS only for sub-2.5 A loads where strict 4.0 V drive is not required and thermal constraints are relaxed. |
Compared with AO3400 and SI2302DS, the UPA622TT-E1-A uniquely balances 4.0 V guaranteed drive, 3.0 A DC current, and 6-pin WSOF thermal performance-making it optimal for space-constrained, battery-powered systems demanding both logic-level compatibility and robust thermal handling.
Availability
UPA622TT-E1-A is available at Aetrix Electronics and suitable for portable power switching, USB load management, and synchronous rectification applications requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.
Supply support for UPA622TT-E1-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and SoC solutions for automotive, industrial, and consumer markets.
The UPA622TT-E1-A belongs to Renesas' legacy µPA series of logic-level MOSFETs designed specifically for compact, battery-operated equipment requiring direct microcontroller drive and minimal board area.
FAQ
What is the maximum continuous drain current rating for UPA622TT-E1-A under standard PCB conditions?
The UPA622TT-E1-A supports ±3.0 A DC drain current when mounted on an FR-4 board with 5000 mm² copper area and thickness of 1.1 mm. This rating assumes ambient temperature ≤ 75°C and accounts for thermal resistance from junction to ambient. Exceeding this current without enhanced cooling risks channel temperature exceeding 150°C, triggering thermal shutdown in protected systems or permanent damage in open-loop applications. Always verify actual board layout thermal performance before finalizing UPA622TT-E1-A in high-duty-cycle designs.
Does UPA622TT-E1-A support true 4.0 V gate drive across its full operating temperature range?
Yes, UPA622TT-E1-A guarantees RDS(on) ≤ 139 mΩ at VGS = 4.0 V and ID = 1.0 A across –55°C to +150°C channel temperature. The gate threshold voltage VGS(off) remains within 1.5–2.5 V over this range, ensuring reliable turn-on even at low temperatures. This makes UPA622TT-E1-A suitable for battery-powered devices operating across wide environmental conditions without gate voltage boosting circuitry.
Can UPA622TT-E1-A be used in high-frequency switching applications like 2 MHz DC-DC converters?
UPA622TT-E1-A achieves td(on) = 10 ns and td(off) = 75 ns with a 10 Ω gate resistor, supporting clean switching up to ~2 MHz in well-designed layouts. However, total gate charge QG = 3.8 nC means gate driver power loss increases quadratically with frequency. For sustained 2 MHz operation, ensure gate driver can source/sink ≥200 mA peak and minimize PCB gate loop inductance. Thermal validation under real PWM conditions is recommended before deployment of UPA622TT-E1-A in such high-frequency applications.
What is the role of the internal gate-source diode in UPA622TT-E1-A, and does it eliminate need for external ESD protection?
The internal gate-source diode in UPA622TT-E1-A provides basic HBM ESD protection (Class 2), but Renesas explicitly states that "an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied." This means the diode protects against handling ESD only-not system-level transients like IEC 61000-4-2 contact discharge. For robust end-equipment compliance, UPA622TT-E1-A must be paired with external TVS or RC snubbers on gate and drain lines in environments with cable hot-plug or inductive load switching.
How does the WSOF package of UPA622TT-E1-A compare thermally to standard SOT-23 MOSFETs?
The 6-pin WSOF package of UPA622TT-E1-A features an exposed drain pad and thinner profile (0.8 mm vs. typical SOT-23's 1.1–1.4 mm), enabling up to 1.3 W total power dissipation on FR-4-nearly 2× higher than most SOT-23 equivalents. Its thermal resistance θj-a is significantly lower due to direct copper contact through the pad. Unlike SOT-23, which relies on leads for heat transfer, UPA622TT-E1-A's WSOF design routes heat vertically into the PCB, making it preferable for thermally dense portable designs where SOT-23 would require oversized copper or thermal vias to match performance.
UPA622TT-E1-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 6-SMD, Flat Leads
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 82mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.8 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 155 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200mW (Ta)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WSOF
UPA622TT-E1-A FAQ
1.How can I place an order for UPA622TT-E1-A through Aetrix?
Please submit a Request for Quotation (RFQ) for UPA622TT-E1-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UPA622TT-E1-A reliable?
The price and inventory of UPA622TT-E1-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UPA622TT-E1-A is usually 5 days.
3.What payment methods are accepted for UPA622TT-E1-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UPA622TT-E1-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UPA622TT-E1-A?
UPA622TT-E1-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UPA622TT-E1-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UPA622TT-E1-A?
For technical support, including UPA622TT-E1-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UPA622TT-E1-A requirements.
6.How does Aetrix verify that UPA622TT-E1-A is sourced from the original manufacturer or authorized distributors?
All UPA622TT-E1-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UPA622TT-E1-A meets industry standards.
7.What is the process for return or replacement of UPA622TT-E1-A?
All UPA622TT-E1-A units undergo pre-shipment inspection (PSI). If there is an issue with UPA622TT-E1-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UPA622TT-E1-A part is unused and in its original packaging.
Return procedure for UPA622TT-E1-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UPA622TT-E1-A Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
