Microchip Technology VN0104N3-G-P013

Overview

VN0104N3-G-P013 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 40 V drain-to-source breakdown voltage, 2.5 A pulsed drain current, and 3 Ω maximum R_DS(ON) at V_GS = 10 V. It features integral source-drain diode, low gate threshold (0.8–2.4 V), and fast switching (t_d(ON) typ. 3 ns) - used in relay drivers, solenoid controls, and low-power DC-DC converters.

For engineers reviewing the VN0104N3-G-P013 datasheet, VN0104N3-G-P013 pinout, VN0104N3-G-P013 application, or VN0104N3-G-P013 equivalent, key selection criteria include its TO-92 thermal resistance (θ_JA = 132 °C/W), guaranteed 1 µA max I_DSS at 40 V, -55°C to +150°C operating range, and suitability for discrete high-side/low-side switching where gate drive simplicity and thermal stability are critical.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process, delivering bipolar-level power handling while retaining MOS advantages: positive temperature coefficient of R_DS(ON), immunity to thermal runaway, and no secondary breakdown. Its gate threshold voltage exhibits -3.8 to -5.5 mV/°C drift, enabling predictable turn-on behavior across temperature.

AC performance is defined by C_ISS = 55–65 pF, C_OSS = 20–25 pF, and t_r/t_f = 5–8 ns under 25 V/1 A conditions with 25 Ω gate drive. The integrated body diode supports freewheeling in inductive loads with V_SD = 1.2–1.8 V at 1 A and t_rr = 400 ns.

Key Specifications

Pinout & Package

Package: 3-lead TO-92 (through-hole, axial lead configuration). Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain. Top-view marking orientation matches standard TO-92 mechanical drawing per Microchip DS20005975A.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel enhancement-mode FET applications.

Compared with STP16NF06L and ZVN2110A, VN0104N3-G-P013 uniquely balances TO-92 form factor, 2.5 A pulsed capability, 40 V rating, and sub-3 Ω R_DS(ON) - making it the preferred choice for cost-sensitive, thermally constrained discrete switching where moderate power and fast response are jointly required.

Availability

VN0104N3-G-P013 is available at Aetrix Electronics and suitable for relay drivers, solenoid controls, and low-power DC-DC converter designs requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for VN0104N3-G-P013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a global semiconductor company specializing in microcontrollers, analog devices, and power management ICs, with a focus on embedded control and connectivity solutions.

VN0104N3-G-P013 belongs to Microchip's vertical DMOS FET product line, designed specifically for discrete power switching in industrial, automotive, and consumer systems where reliability, thermal stability, and ease of use are prioritized over ultra-high efficiency or integration.

FAQ

What is the maximum continuous drain current rating for VN0104N3-G-P013?

The VN0104N3-G-P013 has a continuous drain current (I_D) rating of 350 mA at T_A = 25°C, limited by junction temperature and package thermal resistance (θ_JA = 132 °C/W). At elevated ambient temperatures or without heatsinking, this value decreases - for example, to ~150 mA at 70°C ambient. The pulsed drain current is rated at 2 A, allowing short-duration inrush handling.

Does VN0104N3-G-P013 require a gate resistor in typical switching applications?

Yes, VN0104N3-G-P013 benefits from a series gate resistor (typically 10–100 Ω) to dampen ringing caused by gate-drain capacitance (C_RSS) interacting with PCB trace inductance. Without it, fast edges (t_r/t_f = 5–8 ns) may induce oscillation, leading to increased EMI and potential gate oxide stress. The resistor value balances switching speed versus stability.

Can VN0104N3-G-P013 be used in high-side switch configurations?

VN0104N3-G-P013 can be used in high-side configuration, but requires gate drive voltage ≥ V_DS + V_GS(th) (i.e., >40 V for full enhancement), which complicates biasing. Most designs use it as a low-side switch with source grounded. For high-side use, a dedicated high-side driver IC or charge pump is necessary - unlike purpose-built high-side switches, VN0104N3-G-P013 lacks integrated level-shifting.

What is the significance of the "P013" suffix in VN0104N3-G-P013?

The "P013" suffix in VN0104N3-G-P013 indicates the packaging format: 2000 units per AMMO pack (tape-and-reel compatible carrier for automated assembly). It does not affect electrical specifications. Other variants include P003 (2000/reel) and blank (1000/bag); all share identical die, TO-92 package (N3), and Pb-free/RoHS compliance (G).

How does the integral source-drain diode in VN0104N3-G-P013 affect its use in inductive load circuits?

The integral source-drain diode in VN0104N3-G-P013 provides built-in freewheeling path during turn-off of inductive loads (e.g., relays, solenoids), eliminating the need for an external flyback diode. With V_SD = 1.2–1.8 V and t_rr = 400 ns, it safely clamps inductive voltage spikes, though designers should verify energy dissipation in the diode during repetitive switching to avoid thermal overstress.