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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology VN0106N3-G-P003

Name: VN0106N3-G-P003
Brand: Microchip Technology
SKU: VN0106N3-G-P003
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: VN0106N3-G-P003

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: VN0106N3-G-P003.pdf

Description:: MOSFET N-CH 60V 350MA TO92-3

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Product details

Overview

VN0106N3-G-P003 from Supertex Inc. is an N-channel enhancement-mode vertical DMOS FET in TO-92 package, rated for 60 V drain-to-source voltage, 2.5 A pulsed drain current, and 3.0 Ω R_DS(ON) at V_GS = 10 V. It features integral source-drain diode, low gate charge (Q_G ≈ 4–6 nC), and operates across –55 °C to +150 °C. Used in relay drivers and low-power DC-DC converters where low-threshold switching and thermal stability are critical.

For engineers reviewing the VN0106N3-G-P003 datasheet, VN0106N3-G-P003 pinout, VN0106N3-G-P003 application, or VN0106N3-G-P003 equivalent, key selection criteria include verified 60 V BVDSS rating, confirmed TO-92 pinout (Gate–Source–Drain), R_DS(ON) ≤ 3.0 Ω at 10 V drive, integrated body diode forward voltage ≤ 1.8 V, and thermal resistance θ_JA = 132 °C/W - all validated per DSFP-VN0106 Rev. C081913.

Technical Context

This device employs a vertical DMOS structure with silicon-gate process, delivering bipolar-level power handling while retaining MOS advantages: high input impedance (>10⁹ Ω), positive temperature coefficient for safe paralleling, and immunity to thermal runaway. Its low V_GS(th) (0.8–2.4 V) enables direct TTL/CMOS logic-level drive without level-shifting.

Switching performance is defined by measured t_d(ON) ≤ 5 ns, t_r ≤ 8 ns, t_d(OFF) ≤ 9 ns, and t_f ≤ 8 ns under 25 V V_DD, 1.0 A load, and 25 Ω gate resistance. Capacitance values CISS = 55–65 pF, COSS = 20–25 pF, CRSS = 5.0–8.0 pF are specified at V_DS = 25 V, f = 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Maximum blocking voltage before avalanche; defines safe operation in 48 V systems with margin.
RDS(ON)	3.0 Ω max at VGS = 10 V, ID = 1.0 A - Determines conduction loss: ~3 W dissipation at 1 A, limiting continuous use to 350 mA at TC = 25 °C.
VGS(th)	0.8–2.4 V - Enables direct interface with 3.3 V or 5 V microcontrollers without external gate driver.
ID(pulsed)	2.0 A - Supports short-duration loads like solenoid actuation or lamp inrush without thermal saturation.
θJA	132 °C/W - Requires heatsinking or derating above ambient >50 °C for sustained >250 mA operation.
VSD	1.2–1.8 V - Body diode forward drop impacts efficiency in flyback or synchronous rectifier configurations.
CISS	55–65 pF - Low input capacitance reduces gate drive power and improves switching speed with standard logic buffers.

Pinout & Package

Package: TO-92 (3-lead plastic, Supertex part number N3 outline per DSPD-3TO92N3 E041009). Seating plane defined; leads numbered 1–2–3 from front view, flat side facing viewer, lead 1 leftmost.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	High-impedance control terminal; requires <100 nA leakage current; driven directly by MCU GPIO.
2 (Center)	Source	Reference node for gate drive; connects to system ground or low-side return path.
3 (Right)	Drain	Power output terminal; handles switched load current up to 2.0 A pulsed; connects to load high-side.

Key Features

Feature	Design Value
Free from secondary breakdown	Enables reliable operation under inductive load switching without snubbers or derating.
Integral source-drain diode	Eliminates need for external freewheeling diode in relay/solenoid drivers, reducing BOM count.
Low CISS and fast switching	55–65 pF input capacitance and sub-10 ns rise/fall times support >1 MHz PWM in low-power SMPS.
Positive temperature coefficient of RDS(ON)	ΔRDS(ON)/°C = 0.70–1.0 %/°C ensures inherent current sharing when paralleled devices share thermal environment.
High input impedance	IGSS ≤ 100 nA at ±20 V gate bias allows direct connection to battery-powered microcontrollers with negligible quiescent draw.

Applications

Relay Drivers	Low-Power DC-DC Converters
Use Scenario: Driving 12 V/500 mA electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in on/off mode with 100 ms duty cycle. Use Value: V_GS(th) ≤ 2.4 V ensures full turn-on from 3.3 V MCU outputs; R_DS(ON) ≤ 3.0 Ω limits coil voltage drop to <1.5 V at 500 mA.	Use Scenario: Synchronous rectification in 5 V output, 500 kHz flyback converter for IoT sensor nodes. IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss. Use Value: V_SD ≤ 1.8 V and low Q_G enable >92% efficiency at 100 mA load; TO-92 footprint simplifies layout vs. SOT-23 alternatives.
Solenoid Actuators	LED/Lamp Dimming Circuits
Use Scenario: Controlling 24 V/300 mA pneumatic solenoid valves in HVAC zone actuators. IC Role / Device Role / Timing Role: High-current pulse switch activated for <500 ms duration; body diode handles inductive kickback. Use Value: ID(pulsed) = 2.0 A supports 3× steady-state current during pull-in; thermal stability prevents latch-up at 85 °C ambient.	Use Scenario: PWM dimming of 12 V incandescent lamps in automotive interior lighting. IC Role / Device Role / Timing Role: Low-side modulator operating at 200–500 Hz with 10%–90% duty cycle. Use Value: Low R_DS(ON) minimizes heat generation in sealed lamp housings; TO-92 package allows through-hole mounting on compact PCBs.

Relay Drivers

Low-Power DC-DC Converters

Use Scenario: Driving 12 V/500 mA electromagnetic relays in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; operates in on/off mode with 100 ms duty cycle.

Use Value: V_GS(th) ≤ 2.4 V ensures full turn-on from 3.3 V MCU outputs; R_DS(ON) ≤ 3.0 Ω limits coil voltage drop to <1.5 V at 500 mA.

Use Scenario: Synchronous rectification in 5 V output, 500 kHz flyback converter for IoT sensor nodes.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diode to reduce conduction loss.

Use Value: V_SD ≤ 1.8 V and low Q_G enable >92% efficiency at 100 mA load; TO-92 footprint simplifies layout vs. SOT-23 alternatives.

Solenoid Actuators

LED/Lamp Dimming Circuits

Use Scenario: Controlling 24 V/300 mA pneumatic solenoid valves in HVAC zone actuators.

IC Role / Device Role / Timing Role: High-current pulse switch activated for <500 ms duration; body diode handles inductive kickback.

Use Value: ID(pulsed) = 2.0 A supports 3× steady-state current during pull-in; thermal stability prevents latch-up at 85 °C ambient.

Use Scenario: PWM dimming of 12 V incandescent lamps in automotive interior lighting.

IC Role / Device Role / Timing Role: Low-side modulator operating at 200–500 Hz with 10%–90% duty cycle.

Use Value: Low R_DS(ON) minimizes heat generation in sealed lamp housings; TO-92 package allows through-hole mounting on compact PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZVN3306A	R_DS(ON) = 3.5 Ω min at V_GS = 10 V; BVDSS = 60 V; TO-92 package; no specified V_SD or trr data.	Lacks documented reverse recovery time and body diode specs - unsuitable for inductive flyback without external diode.	Prefer VN0106N3-G-P003 when body diode performance or fast switching is required.
IRLML0030TRPBF	R_DS(ON) = 0.045 Ω at V_GS = 4.5 V; SOT-23 package; BVDSS = 30 V; higher ID continuous rating (4.3 A).	Lower voltage rating limits use to ≤24 V systems; surface-mount only - incompatible with through-hole designs.	Select VN0106N3-G-P003 for 48 V-compatible, through-hole, thermally stable relay/solenoid switching.

Compared with ZVN3306A and IRLML0030TRPBF, VN0106N3-G-P003 uniquely combines 60 V rating, TO-92 through-hole compatibility, verified body diode performance (V_SD ≤ 1.8 V, t_rr ≤ 400 ns), and positive R_DS(ON) tempco - making it optimal for thermally constrained, inductive-load applications requiring mechanical assembly and legacy board layouts.

Availability

VN0106N3-G-P003 is available at Aetrix Electronics and suitable for motor controls, relay drivers, and low-power DC-DC converters requiring stable component supply, RoHS-compliant packaging, and long-term industrial availability.

Supply support for VN0106N3-G-P003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Supertex Inc. was a U.S.-based semiconductor company specializing in high-voltage analog and power management ICs, acquired by Microchip Technology in 2017. Known for robust vertical DMOS FETs and LED drivers.

VN0106N3-G-P003 belongs to Supertex's vertical DMOS FET product line, designed specifically for low-threshold, thermally stable switching in industrial control, power conversion, and electromechanical actuation where reliability under wide temperature swings is essential.

FAQ

What is the maximum continuous drain current for VN0106N3-G-P003 at 25 °C case temperature?

The maximum continuous drain current for VN0106N3-G-P003 is 350 mA at T_C = 25 °C, as specified in the Thermal Characteristics table. This limit arises from the 1.0 W power dissipation rating and 132 °C/W junction-to-ambient thermal resistance. Exceeding this current without heatsinking risks junction temperature exceeding 150 °C, triggering thermal shutdown or degradation.

Does VN0106N3-G-P003 have a built-in body diode, and what are its key parameters?

Yes, VN0106N3-G-P003 integrates a source-drain body diode. Per DSFP-VN0106, its forward voltage drop (V_SD) is 1.2–1.8 V at I_SD = 1.0 A and V_GS = 0 V, and reverse recovery time (t_rr) is ≤ 400 ns under the same conditions. These values are measured and guaranteed, enabling use in flyback and inductive load circuits without external diodes.

Can VN0106N3-G-P003 be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, VN0106N3-G-P003 can be driven directly by a 3.3 V microcontroller GPIO. Its gate threshold voltage (V_GS(th)) ranges from 0.8 V to 2.4 V, ensuring full enhancement at 3.3 V. At V_GS = 3.3 V, typical R_DS(ON) is ~4.5 Ω (interpolated from curves), supporting ≤500 mA loads with acceptable conduction loss.

What is the absolute maximum gate-to-source voltage rating for VN0106N3-G-P003?

The absolute maximum gate-to-source voltage rating for VN0106N3-G-P003 is ±20 V, as stated in the Absolute Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable 5 V logic drive, no gate protection resistor is needed, but clamping above 12 V is recommended in noisy environments.

Is VN0106N3-G-P003 RoHS compliant and lead-free?

Yes, VN0106N3-G-P003 is RoHS compliant and lead-free. The "-G" suffix in the part number explicitly denotes lead (Pb)-free / RoHS-compliant packaging, per Supertex's ordering information section. This applies to all variants including P003, with full compliance documentation available in DSFP-VN0106.

VN0106N3-G-P003 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 350mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 65 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

VN0106N3-G-P003 FAQ

1.How can I place an order for VN0106N3-G-P003 through Aetrix?

Please submit a Request for Quotation (RFQ) for VN0106N3-G-P003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VN0106N3-G-P003 reliable?

The price and inventory of VN0106N3-G-P003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VN0106N3-G-P003 is usually 5 days.

3.What payment methods are accepted for VN0106N3-G-P003?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VN0106N3-G-P003 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VN0106N3-G-P003?

VN0106N3-G-P003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VN0106N3-G-P003 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VN0106N3-G-P003?

For technical support, including VN0106N3-G-P003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VN0106N3-G-P003 requirements.

6.How does Aetrix verify that VN0106N3-G-P003 is sourced from the original manufacturer or authorized distributors?

All VN0106N3-G-P003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VN0106N3-G-P003 meets industry standards.

7.What is the process for return or replacement of VN0106N3-G-P003?

All VN0106N3-G-P003 units undergo pre-shipment inspection (PSI). If there is an issue with VN0106N3-G-P003, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VN0106N3-G-P003 part is unused and in its original packaging.

Return procedure for VN0106N3-G-P003:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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