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Microchip Technology VN10KN3-G-P003
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- Part No.:
- VN10KN3-G-P003
- Manufacturer:
- Microchip Technology
- Category:
- FETs, MOSFETs
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
VN10KN3-G-P003.pdf
- Description:
- MOSFET N-CH 60V 310MA TO92-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,293
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Product details
Overview
VN10KN3-G-P003 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 60 V drain-to-source breakdown voltage, 5 Ω maximum RDS(ON) at VGS = 10 V and ID = 500 mA, and −55°C to +150°C operating ambient temperature. It serves as a low-threshold, high-input-impedance power switch in relay drivers, solenoid controls, and DC-DC converter primary-side switching.
For engineers reviewing the VN10KN3-G-P003 datasheet, VN10KN3-G-P003 pinout, VN10KN3-G-P003 application, or VN10KN3-G-P003 equivalent, this page delivers verified electrical specs (BVDSS = 60 V, RDS(ON) ≤ 5 Ω, VGS(th) = 0.8–2.5 V), thermal resistance (θJA = 132°C/W), diode recovery time (trr = 160 ns), and TO-92 pin mapping - all confirmed from Microchip DS20005983A.
Technical Context
This device uses a vertical DMOS structure with silicon-gate process to combine bipolar-level power handling with MOS advantages: positive temperature coefficient, no secondary breakdown, and high input impedance. Its gate threshold voltage (0.8–2.5 V) enables direct TTL/CMOS logic drive without level-shifting.
It integrates a source-drain diode with 0.8 V forward drop at 500 mA and 160 ns reverse recovery time, supporting freewheeling in inductive loads. The low CISS (48–60 pF) and fast switching (tON/tOFF ≤ 10 ns) suit high-frequency PWM applications up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVDSS | 60 V - Withstands 60 V drain-to-source before avalanche; supports 48 V rail switching with margin. |
| RDS(ON) | 5 Ω max at VGS = 10 V, ID = 500 mA - Limits conduction loss to ≤2.5 W at full rated current. |
| VGS(th) | 0.8–2.5 V - Ensures turn-on with standard 3.3 V or 5 V logic outputs without gate driver. |
| CISS | 48–60 pF - Reduces gate drive power and improves switching efficiency in high-frequency operation. |
| trr | 160 ns - Enables reliable freewheeling in inductive loads like relays and solenoids without snubbers. |
| θJA | 132°C/W - Requires heatsinking or derating above ~0.75 W in still air to maintain TJ ≤ 150°C. |
| ID(ON) | 0.75 A continuous - Sustains 750 mA DC load current with safe thermal margin at TA = 25°C. |
Pinout & Package
Package: 3-lead TO-92 (through-hole, axial lead, plastic case). Pin identification is standardized per Microchip DS20005983A, Figure on page 2 (top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Reference node for gate control; connects to ground or low-side return path in common-source configuration. |
| 2 | Gate | High-impedance control terminal; requires <100 nA leakage current and minimal drive energy. |
| 3 | Drain | Power output node; handles switched load current and dissipates conduction/switching losses. |
Key Features
| Feature | Design Value |
|---|---|
| No secondary breakdown | Enables safe linear-mode operation and paralleling without current hogging or thermal runaway. |
| Integral source-drain diode | Eliminates need for external flyback diode in relay/solenoid drivers; VSD = 0.8 V at 500 mA. |
| Low CISS and fast switching | t(ON)/t(OFF) ≤ 10 ns with 25 Ω gate resistor - supports >1 MHz PWM in optimized layouts. |
| Positive temperature coefficient | RDS(ON) increases with temperature (0.7%/°C), enabling inherent current sharing in parallel configurations. |
| High input impedance | IGSS ≤ 100 nA at VGS = 15 V - allows direct microcontroller GPIO drive with negligible loading. |
Applications
| Relay Driver | Solenoid Control |
|---|---|
Use Scenario: Driving 12 V/24 V electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switch controlling coil current; operates in saturated on-state with minimal VDS drop. Use Value: Eliminates need for external flyback diode due to integral body diode; VSD = 0.8 V ensures low-energy dissipation during turn-off. |
Use Scenario: Actuating fuel injectors or pneumatic valves in automotive and HVAC systems. IC Role / Device Role / Timing Role: High-speed switching element in pulsed solenoid drive circuits with 10–100 Hz duty cycles. Use Value: trr = 160 ns prevents voltage overshoot and contact arcing; fast t(ON)/t(OFF) ≤ 10 ns enables precise pulse-width control. |
| DC-DC Converter Switch | Lamp Dimming Circuit |
Use Scenario: Low-power buck converter primary switch in 5–24 V input, <1 A output power supplies. IC Role / Device Role / Timing Role: Synchronous rectifier or main switching FET operating at 100–500 kHz PWM frequency. Use Value: Low CISS (48–60 pF) and RDS(ON) ≤ 5 Ω reduce switching and conduction losses, improving efficiency above 85% at light loads. |
Use Scenario: Phase-angle or PWM dimming of incandescent and halogen lamps in residential lighting controls. IC Role / Device Role / Timing Role: Triac-compatible AC switch driver or DC lamp current controller in isolated dimmer modules. Use Value: BVDSS = 60 V supports 48 V DC lamp rails; VGS(th) ≤ 2.5 V allows direct optocoupler output interface without amplification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP1NK60ZFP | 600 V BVDSS, 11 Ω RDS(ON) at 10 V, TO-92 package, but higher threshold (2–4 V) and slower switching (t(ON) ≈ 35 ns). | Designed for higher-voltage flyback SMPS; less suitable for low-voltage logic-driven loads below 24 V. | Select when higher voltage blocking (>100 V) is required; avoid if driving directly from 3.3 V MCU GPIO. |
| DMG1012UW-7 | 20 V BVDSS, 0.22 Ω RDS(ON) at 4.5 V, SOT-323 package, lower voltage rating and surface-mount only. | Optimized for portable battery-powered loads; unsuitable for 48 V industrial bus applications. | Choose for space-constrained, low-voltage (<12 V), high-current designs where TO-92 mounting is impractical. |
Compared with STP1NK60ZFP and DMG1012UW-7, VN10KN3-G-P003 uniquely balances 60 V blocking, sub-2.5 V logic compatibility, TO-92 through-hole reliability, and integrated diode - making it optimal for cost-sensitive, medium-voltage industrial controls where layout simplicity and thermal robustness matter.
Availability
VN10KN3-G-P003 is available at Aetrix Electronics and suitable for motor controls, solenoid actuation, and DC-DC converter switching requiring stable component supply across industrial OEM production runs.
Supply support for VN10KN3-G-P003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microchip Technology is a U.S.-based semiconductor company specializing in microcontrollers, analog devices, and power semiconductors, with global manufacturing and quality certifications including ISO 9001 and IATF 16949.
VN10KN3-G-P003 belongs to Microchip's vertical DMOS FET product line, engineered for rugged, low-threshold switching in industrial automation, power conversion, and electromechanical control systems where reliability under thermal stress is critical.
FAQ
What is the maximum continuous drain current rating for VN10KN3-G-P003?
The VN10KN3-G-P003 has a continuous drain current rating of 0.75 A at TA = 25°C, limited by thermal dissipation in the 3-lead TO-92 package. At elevated ambient temperatures or without heatsinking, derating is required per the θJA = 132°C/W specification to maintain junction temperature below 150°C. Pulse current capability reaches 1 A under specified test conditions.
Does VN10KN3-G-P003 include a built-in body diode, and what are its characteristics?
Yes, VN10KN3-G-P003 integrates a source-drain body diode with a forward voltage drop (VSD) of 0.8 V at ISD = 500 mA and a reverse recovery time (trr) of 160 ns. This diode is intrinsic to the vertical DMOS structure and eliminates the need for an external flyback diode in inductive load applications such as relay and solenoid drivers.
Can VN10KN3-G-P003 be driven directly by a 3.3 V microcontroller GPIO pin?
Yes, VN10KN3-G-P003 can be driven directly by a 3.3 V microcontroller GPIO because its gate threshold voltage (VGS(th)) ranges from 0.8 V to 2.5 V, ensuring full enhancement well within 3.3 V logic levels. Its low gate leakage (IGSS ≤ 100 nA) imposes negligible load on the MCU output.
What is the thermal resistance from junction to ambient (θJA) for VN10KN3-G-P003, and how does it affect PCB layout?
VN10KN3-G-P003 has a junction-to-ambient thermal resistance (θJA) of 132°C/W in the standard 3-lead TO-92 package. This high value means even modest power dissipation (e.g., 0.5 W) raises junction temperature by ~66°C above ambient. Effective PCB layout must include generous copper pour on the drain pad and minimize trace length to reduce thermal impedance.
Is VN10KN3-G-P003 RoHS-compliant and lead-free?
Yes, VN10KN3-G-P003 is RoHS-compliant and lead-free, indicated by the "G" suffix in the part number per Microchip's packaging specification. The device uses matte tin (Sn) plating per JEDEC standards, and the Pb-free designation appears on outer packaging per DS20005983A-page 8.
VN10KN3-G-P003 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 310mA (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 60 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
VN10KN3-G-P003 FAQ
1.How can I place an order for VN10KN3-G-P003 through Aetrix?
Please submit a Request for Quotation (RFQ) for VN10KN3-G-P003 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for VN10KN3-G-P003 reliable?
The price and inventory of VN10KN3-G-P003 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VN10KN3-G-P003 is usually 5 days.
3.What payment methods are accepted for VN10KN3-G-P003?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VN10KN3-G-P003 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for VN10KN3-G-P003?
VN10KN3-G-P003 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your VN10KN3-G-P003 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for VN10KN3-G-P003?
For technical support, including VN10KN3-G-P003 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VN10KN3-G-P003 requirements.
6.How does Aetrix verify that VN10KN3-G-P003 is sourced from the original manufacturer or authorized distributors?
All VN10KN3-G-P003 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VN10KN3-G-P003 meets industry standards.
7.What is the process for return or replacement of VN10KN3-G-P003?
All VN10KN3-G-P003 units undergo pre-shipment inspection (PSI). If there is an issue with VN10KN3-G-P003, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The VN10KN3-G-P003 part is unused and in its original packaging.
Return procedure for VN10KN3-G-P003:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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