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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology VN10KN3-G-P013

Name: VN10KN3-G-P013
Brand: Microchip Technology
SKU: VN10KN3-G-P013
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: VN10KN3-G-P013

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: VN10KN3-G-P013.pdf

Description:: MOSFET N-CH 60V 310MA TO92-3

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Product details

Overview

VN10KN3-G-P013 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 60 V drain-to-source breakdown voltage, 5 Ω maximum R_DS(ON) at V_GS = 10 V and I_D = 500 mA, and –55°C to +150°C operating ambient temperature. It serves as a low-threshold, high-input-impedance power switch in motor controls, relay drivers, and DC-DC converter primary-side switching.

For engineers reviewing the VN10KN3-G-P013 datasheet, VN10KN3-G-P013 pinout, VN10KN3-G-P013 application, or VN10KN3-G-P013 equivalent, key selection criteria include its 0.8–2.5 V gate threshold voltage, integral source-drain diode with 0.8 V forward drop, fast 10 ns turn-on/turn-off times, and thermal stability across industrial temperature ranges.

Technical Context

This device uses a vertical DMOS structure with silicon-gate process to combine bipolar-level power handling with MOS advantages: positive temperature coefficient of R_DS(ON), immunity to thermal runaway, and no secondary breakdown. Its 48 pF typical input capacitance (C_ISS) and 2 pF typical reverse transfer capacitance (C_RSS) support fast switching in low-power switching applications.

The integrated source-drain diode enables bidirectional current capability in flyback and snubber circuits, while the 132°C/W junction-to-ambient thermal resistance reflects its TO-92 package limitation for continuous conduction. Gate drive requires only 100 nA leakage current at 15 V, enabling direct microcontroller interface without buffer stages.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Maximum drain-to-source voltage before avalanche onset; defines safe blocking range in 48 V systems.
RDS(ON) max	5 Ω at VGS = 10 V, ID = 500 mA - Determines on-state power loss (≤2.5 W at full current) and thermal rise in linear operation.
VGS(th)	0.8–2.5 V - Enables direct drive from 3.3 V or 5 V logic; low threshold reduces gate drive complexity.
t(ON)/t(OFF)	10 ns each - Supports >30 MHz switching in resonant or Class-E topologies with minimal dead-time overhead.
CISS	48 pF typical - Low input capacitance minimizes gate drive energy and improves EMI profile in high-frequency switching.
VSD	0.8 V at ISD = 500 mA - Defines forward conduction loss in freewheeling paths; lower than standard PN diodes.
θJA	132°C/W - Limits continuous power dissipation to ~0.76 W at TA = 25°C; requires heatsinking above 300 mA DC.

Pinout & Package

Package: 3-lead TO-92 (N3), through-hole, Pb-free/RoHS-compliant, marked "VN10K" with date code and traceability.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Reference node for gate control; connects to ground or low-side return path in common-source configuration.
2	Gate	High-impedance control terminal; requires <100 nA leakage current at 15 V and drives with <500 mA peak current for 10 ns transitions.
3	Drain	Power output terminal; handles up to 750 mA pulsed current and supports 60 V inductive load switching.

Key Features

Feature	Design Value
No secondary breakdown	Enables safe linear-mode operation and paralleling without current hogging or thermal collapse.
Low CISS and fast switching	48 pF C_ISS and 10 ns t_ON/t_OFF reduce switching losses and gate driver stress in high-frequency SMPS.
Integral source-drain diode	0.8 V V_SD and 160 ns t_rr support efficient freewheeling in buck, flyback, and relay-coil suppression circuits.
Positive temperature coefficient	R_DS(ON) increases with temperature (0.7%/°C), enabling inherent current sharing in paralleled configurations.
High input impedance	100 nA I_GSS at 15 V allows direct GPIO driving from MCUs without level-shifting or buffering.

Applications

Motor Control	Relay/Solenoid Driver
Use Scenario: Driving small DC brush motors (≤24 V, ≤500 mA) in HVAC actuators and office automation devices. IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed via gate voltage modulation. Use Value: 0.8–2.5 V V_GS(th) ensures reliable turn-on from 3.3 V MCU outputs; 5 Ω R_DS(ON) limits resistive loss to <1.25 W at stall current.	Use Scenario: Energizing 12 V/24 V electromagnetic relays and solenoids in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-speed, low-power switch replacing mechanical contacts to extend service life and reduce bounce. Use Value: 10 ns switching enables precise timing control; integral diode clamps inductive kickback without external components.
DC-DC Converter	LED/Lamp Driver
Use Scenario: Synchronous rectification or low-side switching in isolated flyback and buck converters under 10 W. IC Role / Device Role / Timing Role: Power switch in primary-side regulation or secondary-side synchronous rectifier (with external gate control). Use Value: 60 V BVDSS accommodates reflected voltages in 24 V input designs; 132°C/W θ_JA supports compact PCB layouts with minimal copper area.	Use Scenario: Constant-current dimming of incandescent lamps and high-brightness LEDs in automotive interior lighting. IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating lamp brightness and thermal management. Use Value: Excellent thermal stability prevents thermal runaway during extended dimming; 150°C max T_A rating suits under-dash environments.

Motor Control

Relay/Solenoid Driver

Use Scenario: Driving small DC brush motors (≤24 V, ≤500 mA) in HVAC actuators and office automation devices.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed via gate voltage modulation.

Use Value: 0.8–2.5 V V_GS(th) ensures reliable turn-on from 3.3 V MCU outputs; 5 Ω R_DS(ON) limits resistive loss to <1.25 W at stall current.

Use Scenario: Energizing 12 V/24 V electromagnetic relays and solenoids in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: High-speed, low-power switch replacing mechanical contacts to extend service life and reduce bounce.

Use Value: 10 ns switching enables precise timing control; integral diode clamps inductive kickback without external components.

DC-DC Converter

LED/Lamp Driver

Use Scenario: Synchronous rectification or low-side switching in isolated flyback and buck converters under 10 W.

IC Role / Device Role / Timing Role: Power switch in primary-side regulation or secondary-side synchronous rectifier (with external gate control).

Use Value: 60 V BVDSS accommodates reflected voltages in 24 V input designs; 132°C/W θ_JA supports compact PCB layouts with minimal copper area.

Use Scenario: Constant-current dimming of incandescent lamps and high-brightness LEDs in automotive interior lighting.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current sink regulating lamp brightness and thermal management.

Use Value: Excellent thermal stability prevents thermal runaway during extended dimming; 150°C max T_A rating suits under-dash environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60ZFP	600 V BVDSS, 11 Ω RDS(ON), TO-92 package, higher VGS(th) (2–4 V)	Designed for high-voltage AC mains switching; unsuitable for low-voltage logic drive	Select only if >400 V blocking is required; not a functional substitute for VN10KN3-G-P013 in 24–48 V systems.
ZVN2110A	60 V BVDSS, 5.5 Ω RDS(ON), TO-92, VGS(th) = 1–2.5 V, 100 pF CISS	Higher input capacitance slows switching; identical thermal and drive requirements	Acceptable alternative where 10 ns speed is non-critical; verify layout for increased gate charge.

Compared with STP1NK60ZFP and ZVN2110A, VN10KN3-G-P013 offers the lowest gate threshold and fastest switching among TO-92 N-channel FETs rated for 60 V, making it optimal for battery-powered and microcontroller-driven low-power switching where drive simplicity and speed are prioritized over ultra-high voltage tolerance.

Availability

VN10KN3-G-P013 is available at Aetrix Electronics and suitable for motor controls, relay drivers, and DC-DC converter circuits requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.

Supply support for VN10KN3-G-P013 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor manufacturer specializing in microcontrollers, analog, FPGA, and power management ICs, with global design, manufacturing, and support infrastructure.

The VN10K product line delivers cost-effective, robust N-channel vertical DMOS FETs optimized for low-voltage (<60 V), medium-current (<1 A) industrial and consumer switching applications where reliability, ease of drive, and thermal stability are critical.

FAQ

What is the maximum continuous drain current rating for VN10KN3-G-P013?

The VN10KN3-G-P013 has a continuous drain current (I_D) rating of 310 mA at T_A = 25°C, limited by its 132°C/W junction-to-ambient thermal resistance and 1 W power dissipation limit. At elevated ambient temperatures or with PCB copper heatsinking, derating applies per the thermal curve on page 5 of DS20005983A. The device supports 1 A pulsed current (IDM) under specified test conditions.

Does VN10KN3-G-P013 include a built-in body diode, and what are its characteristics?

Yes, VN10KN3-G-P013 integrates a source-drain diode with a typical forward voltage drop (V_SD) of 0.8 V at 500 mA and reverse recovery time (t_rr) of 160 ns. This diode is intrinsic to the vertical DMOS structure and enables freewheeling in inductive loads without external components, though it is not rated for high-repetition or high-current reverse conduction.

Can VN10KN3-G-P013 be driven directly from a 3.3 V microcontroller GPIO?

Yes, VN10KN3-G-P013 can be driven directly from a 3.3 V microcontroller GPIO because its gate threshold voltage (V_GS(th)) ranges from 0.8 V to 2.5 V, ensuring full enhancement well within 3.3 V logic levels. Its low gate leakage (≤100 nA at 15 V) and modest input capacitance (48 pF typical) impose negligible loading on standard MCU outputs.

What is the absolute maximum gate-to-source voltage for VN10KN3-G-P013?

The absolute maximum gate-to-source voltage (V_GS) for VN10KN3-G-P013 is ±30 V, as specified in the Absolute Maximum Ratings table on page 2 of DS20005983A. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should remain within –10 V to +20 V, with 10 V recommended for minimum R_DS(ON).

Is VN10KN3-G-P013 suitable for linear (analog) operation, such as in a constant-current source?

Yes, VN10KN3-G-P013 is suitable for linear operation due to its freedom from secondary breakdown and positive temperature coefficient of R_DS(ON) (0.7%/°C), which promotes thermal stability and prevents hot-spot formation. Its 60 V BVDSS and 5 Ω R_DS(ON) support regulated current sources up to ~120 mA at 5 V drop, provided adequate heatsinking is applied per the SOA curve on page 4.

VN10KN3-G-P013 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 310mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 60 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

VN10KN3-G-P013 FAQ

1.How can I place an order for VN10KN3-G-P013 through Aetrix?

Please submit a Request for Quotation (RFQ) for VN10KN3-G-P013 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VN10KN3-G-P013 reliable?

The price and inventory of VN10KN3-G-P013 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VN10KN3-G-P013 is usually 5 days.

3.What payment methods are accepted for VN10KN3-G-P013?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VN10KN3-G-P013 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VN10KN3-G-P013?

VN10KN3-G-P013 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VN10KN3-G-P013 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VN10KN3-G-P013?

For technical support, including VN10KN3-G-P013 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VN10KN3-G-P013 requirements.

6.How does Aetrix verify that VN10KN3-G-P013 is sourced from the original manufacturer or authorized distributors?

All VN10KN3-G-P013 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VN10KN3-G-P013 meets industry standards.

7.What is the process for return or replacement of VN10KN3-G-P013?

All VN10KN3-G-P013 units undergo pre-shipment inspection (PSI). If there is an issue with VN10KN3-G-P013, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VN10KN3-G-P013 part is unused and in its original packaging.

Return procedure for VN10KN3-G-P013:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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