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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Microchip Technology VN10KN3-G-P014

Name: VN10KN3-G-P014
Brand: Microchip Technology
SKU: VN10KN3-G-P014
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: VN10KN3-G-P014

Manufacturer:: Microchip Technology

Category:: FETs, MOSFETs

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: VN10KN3-G-P014.pdf

Description:: MOSFET N-CH 60V 310MA TO92-3

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Product details

Overview

VN10KN3-G-P014 from Microchip Technology is an N-channel enhancement-mode vertical DMOS FET in a 3-lead TO-92 package, rated for 60 V drain-to-source breakdown voltage, 5 Ω maximum R_DS(ON) at V_GS = 10 V and I_D = 500 mA, and −55°C to +150°C operating ambient temperature. It serves as a low-threshold, high-input-impedance power switch in motor controls, relay drivers, and DC-DC converters.

For engineers reviewing the VN10KN3-G-P014 datasheet, VN10KN3-G-P014 pinout, VN10KN3-G-P014 application, or VN10KN3-G-P014 equivalent, key selection considerations include its 7.5 Ω R_DS(ON) at 5 V gate drive, integral source-drain diode with 0.8 V forward drop, and thermal stability across industrial temperature ranges.

Technical Context

This device uses a vertical DMOS structure with silicon-gate process to combine bipolar-like power handling with MOS advantages: positive temperature coefficient, immunity to thermal runaway, and absence of secondary breakdown. Its gate threshold voltage (0.8–2.5 V) enables direct TTL/CMOS logic-level drive without level-shifting circuitry.

The 48 pF typical input capacitance (C_ISS) and 10 ns typical turn-on/off times support fast switching in low-power SMPS and solenoid control circuits. The integral body diode exhibits 160 ns reverse recovery time and supports freewheeling current paths in inductive load applications.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Withstands up to 60 V drain-to-source voltage before avalanche conduction begins.
RDS(ON) max	5 Ω at VGS = 10 V, ID = 500 mA - Enables low conduction loss in 500 mA continuous switching loads.
VGS(th)	0.8–2.5 V - Ensures reliable turn-on with standard 3.3 V or 5 V microcontroller GPIO outputs.
ID(ON)	0.75 A - Supports continuous 750 mA drain current under specified thermal conditions.
CISS	48 pF typical - Reduces gate drive power requirement and improves switching efficiency.
θJA	132 °C/W - Defines thermal resistance from junction to ambient in TO-92 package without heatsink.
VSD	0.8 V - Forward voltage of integrated source-drain diode enables bidirectional current handling in H-bridge half-bridges.

Pinout & Package

Package: 3-lead TO-92 (top view), lead-free/RoHS-compliant, marked "VN10K N3 e3" with year-week traceability code.

Pin/Terminal	Circuit Role	Design Meaning
1	Source	Reference node for gate drive; connects to ground or low-side return path in switching topologies.
2	Gate	High-impedance control terminal requiring minimal drive current; referenced to source potential.
3	Drain	Power output terminal connected to load or supply rail; carries switched current and dissipates heat during conduction.

Key Features

Feature	Design Value
Free from secondary breakdown	Enables safe operation under inductive load switching without snubber networks or derating.
Low CISS and fast switching	48 pF C_ISS and ≤10 ns t_ON/t_OFF reduce switching losses in PWM-driven relays and lamp dimmers.
Integral source-drain diode	Eliminates need for external flyback diode in solenoid or relay coil driving applications.
Positive temperature coefficient	Ensures inherent current sharing when paralleling multiple VN10KN3-G-P014 devices for higher current capacity.
High input impedance	Reduces gate drive power to <100 nA leakage, enabling direct interface with low-power MCU I/O pins.

Applications

Motor Control	Relay/Solenoid Driver
Use Scenario: Driving small DC brush motors in portable medical pumps or HVAC actuators. IC Role / Device Role / Timing Role: Low-side power switch controlling motor direction and speed via PWM. Use Value: 0.75 A continuous current rating and 60 V BVDSS accommodate 24 V motor supplies with transient margin.	Use Scenario: Activating 12 V automotive relays or pneumatic solenoids in industrial control panels. IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay contacts in on/off control loops. Use Value: Integral body diode clamps inductive kickback, eliminating external suppression components.
DC-DC Converter Switch	Lamp/LED Driver
Use Scenario: High-side or low-side switch in non-isolated buck regulators powering embedded sensors. IC Role / Device Role / Timing Role: Primary switching element synchronized to controller IC's PWM signal. Use Value: 5 Ω R_DS(ON) at 10 V gate drive minimizes conduction loss at 500 mA output currents.	Use Scenario: Constant-current driver for incandescent lamps or high-brightness LEDs in signage systems. IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator in series with lamp load. Use Value: Thermal stability over −55°C to +150°C ensures reliability in outdoor lighting enclosures.

Motor Control

Relay/Solenoid Driver

Use Scenario: Driving small DC brush motors in portable medical pumps or HVAC actuators.

IC Role / Device Role / Timing Role: Low-side power switch controlling motor direction and speed via PWM.

Use Value: 0.75 A continuous current rating and 60 V BVDSS accommodate 24 V motor supplies with transient margin.

Use Scenario: Activating 12 V automotive relays or pneumatic solenoids in industrial control panels.

IC Role / Device Role / Timing Role: Solid-state replacement for mechanical relay contacts in on/off control loops.

Use Value: Integral body diode clamps inductive kickback, eliminating external suppression components.

DC-DC Converter Switch

Lamp/LED Driver

Use Scenario: High-side or low-side switch in non-isolated buck regulators powering embedded sensors.

IC Role / Device Role / Timing Role: Primary switching element synchronized to controller IC's PWM signal.

Use Value: 5 Ω R_DS(ON) at 10 V gate drive minimizes conduction loss at 500 mA output currents.

Use Scenario: Constant-current driver for incandescent lamps or high-brightness LEDs in signage systems.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current regulator in series with lamp load.

Use Value: Thermal stability over −55°C to +150°C ensures reliability in outdoor lighting enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG1012UW-7	Lower R_DS(ON) (1.5 Ω @ 4.5 V), SOT-323 package, 20 V BVDSS	Not suitable for 45 V+ supply rails; limited to low-voltage logic-level switching.	Select when board space is constrained and supply voltage ≤20 V.
IRLML6344TRPBF	20 V BVDSS, 32 mΩ R_DS(ON) @ 4.5 V, SOT-23 package	Cannot replace VN10KN3-G-P014 in 48 V industrial systems due to lower breakdown rating.	Choose for high-efficiency 3.3 V/5 V microcontroller-driven loads where voltage stress is <20 V.

Compared with DMG1012UW-7 and IRLML6344TRPBF, the VN10KN3-G-P014 provides higher voltage capability (60 V) and TO-92 through-hole mounting for prototyping and serviceable designs, while trading off R_DS(ON) for ruggedness and thermal robustness in ambient temperatures up to +150°C.

Availability

VN10KN3-G-P014 is available at Aetrix Electronics and suitable for motor controls, relay/solenoid drivers, and DC-DC converter switches requiring stable component supply across industrial temperature ranges and long-term production continuity.

Supply support for VN10KN3-G-P014 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microchip Technology is a U.S.-based semiconductor manufacturer specializing in microcontrollers, analog devices, and power semiconductors with global design and manufacturing infrastructure.

The VN10K product line delivers rugged, logic-level-compatible N-channel MOSFETs optimized for industrial and automotive auxiliary power switching, emphasizing thermal stability, ease of paralleling, and intrinsic protection against secondary breakdown.

FAQ

What is the maximum continuous drain current rating for VN10KN3-G-P014?

The VN10KN3-G-P014 is rated for 0.75 A continuous drain current (I_D(ON)) at T_A = 25°C with proper PCB copper area. At elevated ambient temperatures, derating applies per the 132 °C/W junction-to-ambient thermal resistance. The device also supports 1 A pulsed drain current under defined duty cycle conditions, as specified in the thermal characteristics table.

Does VN10KN3-G-P014 have an integrated body diode, and what are its characteristics?

Yes, the VN10KN3-G-P014 includes an integral source-drain diode with a typical forward voltage drop (V_SD) of 0.8 V at 500 mA and a reverse recovery time (t_rr) of 160 ns. This diode enables freewheeling current paths in inductive load applications such as relay coils and solenoids, eliminating the need for external flyback diodes in many designs.

Can VN10KN3-G-P014 be driven directly by a 3.3 V microcontroller GPIO pin?

Yes, the VN10KN3-G-P014 has a gate threshold voltage range of 0.8–2.5 V, making it fully compatible with 3.3 V logic-level drive. At V_GS = 3.3 V, the device achieves sufficiently low R_DS(ON) for most low-current switching applications, though full 5 Ω specification requires V_GS = 10 V. For optimal performance at 3.3 V, verify actual R_DS(ON) using the transfer characteristic curve in Figure 2-8 of the datasheet.

What is the absolute maximum drain-to-source voltage rating for VN10KN3-G-P014?

The absolute maximum drain-to-source voltage (BVDSS) for VN10KN3-G-P014 is 60 V, tested at V_GS = 0 V and I_D = 100 µA. Operation above this voltage risks avalanche breakdown and permanent device damage. Designers should maintain ≥20% margin below 60 V in systems subject to transients or ringing, especially in inductive load switching.

Is VN10KN3-G-P014 RoHS-compliant and lead-free?

Yes, the "G" suffix in VN10KN3-G-P014 denotes a lead (Pb)-free and RoHS-compliant package. The TO-92 package uses matte tin (Sn) plating per JEDEC standards, and the "e3" marking on the device confirms Pb-free construction. Full compliance documentation is available in Microchip's packaging specification documents.

VN10KN3-G-P014 Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 310mA (Tj)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 10V

Rds On (Max) @ Id, Vgs:: 5Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 60 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

VN10KN3-G-P014 FAQ

1.How can I place an order for VN10KN3-G-P014 through Aetrix?

Please submit a Request for Quotation (RFQ) for VN10KN3-G-P014 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for VN10KN3-G-P014 reliable?

The price and inventory of VN10KN3-G-P014 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for VN10KN3-G-P014 is usually 5 days.

3.What payment methods are accepted for VN10KN3-G-P014?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for VN10KN3-G-P014 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for VN10KN3-G-P014?

VN10KN3-G-P014 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your VN10KN3-G-P014 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for VN10KN3-G-P014?

For technical support, including VN10KN3-G-P014 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your VN10KN3-G-P014 requirements.

6.How does Aetrix verify that VN10KN3-G-P014 is sourced from the original manufacturer or authorized distributors?

All VN10KN3-G-P014 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that VN10KN3-G-P014 meets industry standards.

7.What is the process for return or replacement of VN10KN3-G-P014?

All VN10KN3-G-P014 units undergo pre-shipment inspection (PSI). If there is an issue with VN10KN3-G-P014, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The VN10KN3-G-P014 part is unused and in its original packaging.

Return procedure for VN10KN3-G-P014:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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